JPH04192532A - Manufacture of semiconductor chip carrier - Google Patents
Manufacture of semiconductor chip carrierInfo
- Publication number
- JPH04192532A JPH04192532A JP32675290A JP32675290A JPH04192532A JP H04192532 A JPH04192532 A JP H04192532A JP 32675290 A JP32675290 A JP 32675290A JP 32675290 A JP32675290 A JP 32675290A JP H04192532 A JPH04192532 A JP H04192532A
- Authority
- JP
- Japan
- Prior art keywords
- metal body
- heat transfer
- transfer metal
- insulating substrate
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 229920005989 resin Polymers 0.000 claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 34
- 238000007789 sealing Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 6
- 238000000465 moulding Methods 0.000 abstract description 18
- 238000009413 insulation Methods 0.000 abstract 6
- 238000010276 construction Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000008247 Echinochloa frumentacea Nutrition 0.000 description 1
- 240000004072 Panicum sumatrense Species 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 210000000278 spinal cord Anatomy 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本発明は、熱放散型の半導体チンプキャリアの製造方法
に関するものである６The present invention relates to a method for manufacturing a heat-dissipating semiconductor chip carrier6.
半導体の高密度化や高出力化などに伴って、半導体チッ
プからの発熱が高くなっており、半導体チップを実装す
る半導体チップキャリアとして、半導体チ・リブの発熱
を放熱することができるものが要求されている。
第８図はそグ）−例を示すものであり、プリント配線板
などで形成される絶縁基板１内に金属板２を埋設し、絶
縁基板１の一方の面（下面）に金属板２が底面となるキ
ャビティ凹所３を設けてこのキャビティ凹所３に半導体
チップ４が実装しである。絶縁基板１の表面には回路（
図示省略）が形成してあり、この回路の一端に半導体チ
ップ４をワイヤー１１等を介して接続すると共に絶縁基
板１に基部を埋入した端子１２に回路の他端を接続する
ようにしである。また絶縁基板１の他方の面（上面）に
金属板２が底面となる放熱凹所５を設け、放熱凹所５内
において絶縁基板１の上面がら突出するように伝熱金属
体６が接合して取り付けである。そして必要に応じて伝
熱金属体６の表面にヒートシンク７が接合される。
、′め家、めｔ〜本＾ア 土道鹸キ１１．ブ、１シ、Ｌ
春髄へれる熱は、金属板２に吸熱されるヒ共に金属板２
から伝熱金属体６に伝熱されて放熱される。伝熱金属体
６にヒートシンク７を接合している場合には、熱は伝熱
金属体６からヒートシンク７に伝えられて放熱される。
そしてこの半導体チップキャリアの上面と下面にはエポ
キシ樹脂等の封止樹脂１０によって封止が施されている
。この封止をおこなうにあたっては、第７図に示すよう
にモールド金型９内に半導体チップキャリアをセットし
て、型閉めすることによって伝熱金属体６の絶縁基板１
から突出する表面をモールド金型９の内面に当接させ、
この状態でモールド金型９内に封止樹脂１０を射出等し
て注入することによっておこなわれている。伝熱金属体
６の表面をモールド金型９の内面に当接させることによ
って、伝熱金属体６の表面が封止樹脂１０で被覆されな
いようにし、伝熱金属体６がらの放熱面積が封止樹脂１
０で小さくならないようにすると共に、ヒートシンク７
を設ける場合にはヒートシ〕／り７と伝熱金属体６との
接合面積が小さてならないようにしているめである。As semiconductors become more dense and output, the amount of heat generated from semiconductor chips is increasing, and there is a demand for semiconductor chip carriers that can radiate heat from semiconductor chips and ribs. has been done. Fig. 8 shows an example in which a metal plate 2 is embedded in an insulating substrate 1 formed of a printed wiring board, etc., and the metal plate 2 is placed on one surface (lower surface) of the insulating substrate 1. A cavity recess 3 serving as a bottom surface is provided, and a semiconductor chip 4 is mounted in this cavity recess 3. A circuit (
The semiconductor chip 4 is connected to one end of this circuit via a wire 11 or the like, and the other end of the circuit is connected to a terminal 12 whose base is embedded in the insulating substrate 1. . Further, a heat dissipation recess 5 is provided on the other surface (top surface) of the insulating substrate 1, with the metal plate 2 serving as the bottom surface, and a heat transfer metal body 6 is bonded within the heat dissipation recess 5 so as to protrude from the top surface of the insulating substrate 1. It is installed. A heat sink 7 is then bonded to the surface of the heat transfer metal body 6 as required. ,'Meya, Met~Book^A Dodo Kenki 11. Bu, 1shi, L
The heat that enters the vernal spinal cord is absorbed by the metal plate 2, and the metal plate 2
From there, heat is transferred to the heat transfer metal body 6 and radiated. When the heat sink 7 is joined to the heat transfer metal body 6, heat is transmitted from the heat transfer metal body 6 to the heat sink 7 and radiated. The upper and lower surfaces of this semiconductor chip carrier are sealed with a sealing resin 10 such as epoxy resin. To perform this sealing, as shown in FIG.
The surface protruding from the mold is brought into contact with the inner surface of the mold die 9,
In this state, the sealing resin 10 is injected into the molding die 9 by injection or the like. By bringing the surface of the heat transfer metal body 6 into contact with the inner surface of the molding die 9, the surface of the heat transfer metal body 6 is prevented from being covered with the sealing resin 10, and the heat radiation area of the heat transfer metal body 6 is sealed. Stop resin 1
0 so that it does not become small, and the heat sink 7
This is to prevent the bonding area between the heat shield 7 and the heat transfer metal body 6 from becoming small.
しかし、モールド金型９内に半導体チ・ソアキャリアを
セ・ソトするにあたって、伝熱金属体６の表面とモール
ド金型９の内面との平行度を正確に保って伝熱金属体６
の表面の全面をモールド金型９の内面に完全に密着させ
るのは困難てあり、また伝熱金属体６の表面を研磨等し
て完全な平面に調整しておかないと伝熱金属体６の表面
の全面をモールド金型９の内面に密着させることは困難
である。従って、伝熱金属体６の表面とモールド金型９
の内面との間の隙間に封止樹脂１０が侵入して、第８図
（ｂ）のように伝熱金属体６の表面の周部が封止樹脂１
０で覆われることになり、伝熱金属体６の表面の放熱面
積やヒートシンク７との接合面積が小さくなるものであ
った。
本発明は上記の点に鑑みて為されたものであり、伝熱金
属体の表面が封止樹脂で覆われることを防ぐことができ
る半導体チップキャリアの製造方法を提供することを目
的とするものである。However, when setting the semiconductor chip/sore carrier in the molding die 9, the parallelism between the surface of the heat transfer metal body 6 and the inner surface of the mold die 9 must be maintained accurately.
It is difficult to bring the entire surface of the heat transfer metal body 6 into perfect contact with the inner surface of the molding die 9, and unless the surface of the heat transfer metal body 6 is adjusted to a perfect plane by polishing etc. It is difficult to bring the entire surface of the mold into close contact with the inner surface of the molding die 9. Therefore, the surface of the heat transfer metal body 6 and the mold die 9
The sealing resin 10 enters into the gap between the heat transfer metal body 6 and the inner surface, and the peripheral part of the surface of the heat transfer metal body 6 is covered with the sealing resin 1 as shown in FIG.
As a result, the heat dissipation area of the surface of the heat transfer metal body 6 and the bonding area with the heat sink 7 become small. The present invention has been made in view of the above points, and an object of the present invention is to provide a method for manufacturing a semiconductor chip carrier that can prevent the surface of a heat-transfer metal body from being covered with sealing resin. It is.
本発明に係る半導体チ・ソアキャリアの製造方法は、半
導体チップ４を実装する絶縁基板１に伝熱金属体６をそ
の表面より突出するように設けると共に、伝熱金属体６
の絶縁基板１より突出する表面の端縁に全周に亙って止
め枠８を突出して設け、この絶縁基板１をモールド金型
９内にセットしてモールド金型９の内面に止め枠８を密
接させ、モールド金型９内に封止樹脂１０を注入して絶
縁基板１の表面を樹脂封止することを特徴とするもので
ある。The method for manufacturing a semiconductor chip/sore carrier according to the present invention includes providing a heat transfer metal body 6 on an insulating substrate 1 on which a semiconductor chip 4 is mounted so as to protrude from the surface thereof, and a heat transfer metal body 6
A retaining frame 8 is provided protruding from the edge of the surface protruding from the insulating substrate 1 over the entire circumference, and this insulating substrate 1 is set in a mold die 9, and the retaining frame 8 is provided on the inner surface of the mold die 9. This is characterized in that the surface of the insulating substrate 1 is sealed with the resin by injecting a sealing resin 10 into the molding die 9.
本発明にあっては、伝熱金属体６の絶縁基板１より突出
する表面の端縁に全周に亙って止め枠８を突出して設け
、この絶縁基板１をモールド金型９内にセットすると共
にモールド金型９の内面に止め枠８を密接させ、モール
ド金型９内に封止樹脂１０を注入するようにしているた
めに、止め枠８によってせき止められて封止樹脂１ｏが
伝熱金属体６の表面とモールド金型９の内面との間に侵
入することを防ぐことかできる。In the present invention, a retaining frame 8 is provided to protrude from the edge of the surface of the heat transfer metal body 6 that protrudes from the insulating substrate 1 over the entire circumference, and the insulating substrate 1 is set in the mold die 9. At the same time, since the stopper frame 8 is brought into close contact with the inner surface of the mold die 9 and the sealing resin 10 is injected into the mold die 9, the sealing resin 1o is blocked by the stopper frame 8 and heat transfer is prevented. Intrusion between the surface of the metal body 6 and the inner surface of the molding die 9 can be prevented.
以下本発明を実施例によって詳述する。
絶縁基板１は、銅箔を積層したエポキシ樹脂積層板など
の銅張り積層板を加工して得られるプリント配線板等に
よって作成されるものであり、絶縁基板１内にはアルミ
ニウムや銅など熱伝導性の良好な金属板２が埋設しであ
る。この金属板２は絶縁基板１を構成する積層板を成形
する際に同時に埋入させることができる。第３図に示す
ようにこの絶縁基板１の一方の面（下面）と他方の面（
上面）にはそれぞれ金属板２の面積よりも小さい面積で
キャビティ凹所３と放熱凹所５とが設けてあり、キャビ
ティ凹所３の底面と放熱凹所５の底面はいずれも金属板
２の表面によって形成されるようにしである。また絶縁
基板１の下面にはキャビティ凹所３を中心に放射状に複
数本の回路（図示省略）が銅箔の工・ソチング加工など
で作成しである。ＩＣチ・ツブなど半導体チップ４はキ
ャビテア ｊＬＩｌ ％ Ｑ Ｉ＊Ｉ Ｌ＝ ｋ ｔ
ｓア仝マ鼾つＭ 志ｆ １．− ｍ ＃ ”Ｃ＋ ２゜
ものであり、半導体チ・ツブ４の外部接続端子部と回路
の一端部との間に命線なと゛のワイヤー１１をボンディ
ングして半導体チ・ツブ４を回路に接続しである。絶縁
基板１にはさらに複数本の端子１２．１２・・・がその
下面から突出するように基部を絶縁基板１に埋入して取
り付けてあって、各端子１２は回路の他端部に接続して
あり、半導体チップ４は回路を介して端子１２に接続さ
れるようにしである。伝熱金属体６はアルミニウムなビ
熱伝導性が良好であると共に軽量で且つ傷つきにくい金
属で作成されるものであって、放熱凹所５の深さよりや
や厚い寸法に形成されるものてあり、溶接金属や金属粉
入り接着剤など熱伝導性の良好な接合材１３を用いて伝
熱金属体６を金属板２に接きするようにしである。従っ
て伝熱金属体６は絶縁基板１の上面より突出するように
取り付けられている。そしてこの伝熱金属体６の突出す
る表面には第６図＜ａ ＞（ｂ ＞に示すように、その
端縁の全長に亙って止め枠８を接合して取り付けである
。この止め枠８としては、モールド金型９の熱に耐える
ニヒのできる耐熱性樹脂 例えばシリコン系樹脂、エポ
キシ系樹脂、ポリイミド系樹脂、テフロン系樹脂なと゛
で形成したものを用いるのが好ましく、幅寸法を最低０
．０５ｍｍ以上、皐ましくけ０．１ｍｍ以上に設定する
のかよい。
次ぎにエポキシ樹脂などの封止樹脂１０て゛封止成形を
おこなうにあたっては、伝熱金属体６や半導体チップ４
を取り付けた絶縁基板１をモールド金型９内にセットし
、第１図に示すように止め枠８をモールド金型９の内面
に押さえ付けて密接させる。このようにセ・リドした状
態でモールド金型８内に封止樹脂１０を射出等して注入
することによって、第２図に示すように伝熱金属体６の
側方において絶縁基板１の上面を封止樹脂１０て封止す
るものである。ここで、止め枠８は線としてモールド金
型９の内面に当接されるために、止め枠８は全長に亙っ
てモールド金型９の内面に容易に密着させることができ
るものであり、この止め枠８で囲まれる伝熱金属体６の
表面に封止樹脂１０が侵入することを止め枠８でせき止
めて完全に防てニとかできる。従って第２［Ｊ＜ａ＞（
ｂ）に示すように、伝熱金属体６の表面が封止樹脂１０
て被覆されるようなことがなくなり 伝熱金属体６の表
面の放熱面積やヒートシンク７との接な面積が小さくな
ったりすることがなくなるものである。また第１図及び
第２図の実施例では、絶縁基板１の下面においても半導
体チップ４を被覆するように封止樹脂１０て封止をおこ
なうようにしてあり、さらに、絶縁基板１にその上下に
貫通する貫通孔１４を設けて、貫通孔１４内を通して絶
縁基板１の上面の封止樹脂１０と絶縁基板１の下面の封
止樹脂１０とが一体化されるようにしである。
尚、上記実施例では、絶縁基板１内に金属板２を埋設す
ると共に伝熱金属体６をこの金属板２に接合することに
よって絶縁基板］−に取り付けるようにしたが、第４図
や第５図に示すように、金属板２を用いずに伝熱金属体
６を絶縁基板１に直接取り付けるようにしてもよい。ま
た上記各実施例における半導体チップキャリアはＰＧＡ
タイプであるが、ＱＦＰタイプなどに形成することもて
きる。The present invention will be explained in detail below with reference to Examples. The insulating substrate 1 is made of a printed wiring board etc. obtained by processing a copper-clad laminate such as an epoxy resin laminate with copper foil laminated thereon. A metal plate 2 with good properties is embedded. This metal plate 2 can be embedded simultaneously when forming the laminated plate constituting the insulating substrate 1. As shown in FIG. 3, one surface (lower surface) and the other surface (lower surface) of this insulating substrate 1
A cavity recess 3 and a heat dissipation recess 5 are provided on the upper surface of the metal plate 2, each having an area smaller than that of the metal plate 2. It is to be formed by the surface. Further, on the lower surface of the insulating substrate 1, a plurality of circuits (not shown) are formed radially around the cavity recess 3 by means of copper foil machining, soching, etc. Semiconductor chips 4 such as IC chips and tubes are caviteared.
sAma snoring 1. − m # "C+ 2°", and the semiconductor chip 4 is connected to the circuit by bonding the wire 11, which is a lifeline, between the external connection terminal part of the semiconductor chip 4 and one end of the circuit. The insulating substrate 1 is further fitted with a plurality of terminals 12, 12, etc. whose bases are embedded in the insulating substrate 1 so as to protrude from the bottom surface of the insulating substrate 1, and each terminal 12 is connected to the other end of the circuit. The semiconductor chip 4 is connected to the terminal 12 via a circuit.The heat transfer metal body 6 is made of aluminum, which has good thermal conductivity, is lightweight, and is a metal that is not easily damaged. It is made to be slightly thicker than the depth of the heat dissipation recess 5, and is made by bonding the heat transfer metal using a bonding material 13 with good thermal conductivity such as weld metal or adhesive containing metal powder. The body 6 is in contact with the metal plate 2.Therefore, the heat transfer metal body 6 is attached so as to protrude from the upper surface of the insulating substrate 1.The protruding surface of the heat transfer metal body 6 is As shown in Fig. 6<a>(b), the fixing frame 8 is attached over the entire length of the edge. It is preferable to use a heat-resistant resin such as silicone resin, epoxy resin, polyimide resin, or Teflon resin, and the width dimension should be at least 0.
．． It is better to set the distance to 0.05 mm or more, or 0.1 mm or more. Next, when performing sealing molding with a sealing resin 10 such as an epoxy resin, the heat transfer metal body 6 and the semiconductor chip 4 are sealed.
The insulating substrate 1 to which the insulating substrate 1 is attached is set in a molding die 9, and the stopper frame 8 is pressed against the inner surface of the molding die 9 to bring it into close contact with the inner surface of the molding die 9, as shown in FIG. By injecting the sealing resin 10 into the mold 8 in this sealed state, the upper surface of the insulating substrate 1 is formed on the side of the heat transfer metal body 6 as shown in FIG. is sealed with a sealing resin 10. Here, since the stopper frame 8 is brought into contact with the inner surface of the mold die 9 as a line, the stopper frame 8 can be easily brought into close contact with the inner surface of the mold die 9 over its entire length. The sealing resin 10 can be completely prevented from entering the surface of the heat transfer metal body 6 surrounded by the stopper frame 8 by blocking it with the stopper frame 8. Therefore, the second [J<a>(
As shown in b), the surface of the heat transfer metal body 6 is covered with the sealing resin 10.
This prevents the heat-transfer metal body 6 from being covered with heat, thereby preventing the heat-radiating area of the surface of the heat-transfer metal body 6 and the area in contact with the heat sink 7 from becoming small. In the embodiments shown in FIGS. 1 and 2, the sealing resin 10 is also used to cover the semiconductor chip 4 on the lower surface of the insulating substrate 1, and the upper and lower surfaces of the insulating substrate 1 are also sealed. A through hole 14 is provided through the through hole 14 so that the sealing resin 10 on the upper surface of the insulating substrate 1 and the sealing resin 10 on the lower surface of the insulating substrate 1 are integrated through the through hole 14. In the above embodiment, the metal plate 2 is embedded in the insulating substrate 1, and the heat transfer metal body 6 is attached to the insulating substrate by bonding it to the metal plate 2. As shown in FIG. 5, the heat transfer metal body 6 may be directly attached to the insulating substrate 1 without using the metal plate 2. Furthermore, the semiconductor chip carrier in each of the above embodiments is a PGA.
Although it is a type, it can also be formed into a QFP type.
上述力ように本発明にあっては、伝熱金属体め絶縁基板
より突出する表面の端縁に全周に亙って止め枠を突出し
て設け、この絶縁基板をモールド金型内にセントすると
共にモールド金型の内面に止め枠を密接させ、この状態
でモールド金型内に封止樹脂を注入するようにしたのて
、止め枠は線ヒして当接されることになって全長に互っ
てモールド金型の内面に容易に密着させることがてきる
ものであり、この止め枠で囲まれる伝熱金属体の表面に
封止樹脂が侵入することをせき止めることができ、封止
樹脂が伝熱金属体の表面とモールド金型の内面との間に
侵入して封止樹脂て伝熱金属体の表面が被覆されること
を防ぐことができるものである。As mentioned above, in the present invention, a retaining frame is provided protruding all around the edge of the surface of the heat transfer metal body protruding from the insulating substrate, and this insulating substrate is placed in the mold. At the same time, the stopper frame is brought into close contact with the inner surface of the mold die, and in this state, the sealing resin is injected into the mold die, and the stopper frame is brought into contact with the line, and the entire length is They can be easily brought into close contact with the inner surface of the mold, and can prevent the sealing resin from entering the surface of the heat transfer metal body surrounded by this stopper frame. This can prevent the surface of the heat-transfer metal body from being covered with the sealing resin due to intrusion between the surface of the heat-transfer metal body and the inner surface of the molding die.
第１図は本発明の一実施例の断面図、第２図（ａ）（ｂ
）は同上によって製造された半導体チップキャリアの断
面図と平面図、第３図乃至第５図はそれぞれ伝熱余属体
七半導体千ツブを取り付けた絶縁基板の断面図、第６図
（ａ）（Ｌ））は同上刃伝熱金属体の拡大した断面図と
平面図 第７図は従来例の断面図、第８図（ａ Ｈｂ
＞は同上によって製造された半導体チ・ツブキャリアの
断面図と平面図である。
１は絶縁基板、４は半導体チ・ツブ、５は放熱凹所、６
は伝熱金属体、８は止め枠 ９はモールド金型、１０は
封止樹脂である。Figure 1 is a sectional view of one embodiment of the present invention, Figures 2 (a) and (b)
) are a cross-sectional view and a plan view of a semiconductor chip carrier manufactured by the same method as above, FIGS. 3 to 5 are cross-sectional views of an insulating substrate to which seven semiconductor chips are attached, respectively, and FIG. 6(a). (L)) is an enlarged sectional view and plan view of the same blade heat transfer metal body. Figure 7 is a sectional view of the conventional example, and Figure 8 (a Hb
> is a sectional view and a plan view of a semiconductor chip carrier manufactured by the same method. 1 is an insulating substrate, 4 is a semiconductor chip, 5 is a heat radiation recess, 6
8 is a heat transfer metal body, 8 is a stopper frame, 9 is a mold, and 10 is a sealing resin.
Claims (1)
をその表面から突出するように設けると共に、伝熱金属
体の絶縁基板より突出する表面の端縁に全周に亙つて止
め枠を突出して設け、この絶縁基板をモールド金型内に
セットしてモールド金型の内面に止め枠を密接させ、モ
ールド金型内に封止樹脂を注入して絶縁基板の表面を樹
脂封止することを特徴とする半導体チップキャリアの製
造方法。(1) A heat transfer metal body is provided on the insulating substrate on which the semiconductor chip is mounted so as to protrude from the surface thereof, and a stopper frame is provided around the entire circumference of the edge of the surface of the heat transfer metal body that protrudes from the insulating substrate. The insulating substrate is provided protrudingly, the insulating substrate is set in a mold, the stopper frame is brought into close contact with the inner surface of the mold, and a sealing resin is injected into the mold to seal the surface of the insulating substrate with the resin. A method for manufacturing a semiconductor chip carrier characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32675290A JPH0719786B2 (en) | 1990-11-27 | 1990-11-27 | Method for manufacturing semiconductor chip carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32675290A JPH0719786B2 (en) | 1990-11-27 | 1990-11-27 | Method for manufacturing semiconductor chip carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04192532A true JPH04192532A (en) | 1992-07-10 |
| JPH0719786B2 JPH0719786B2 (en) | 1995-03-06 |
Family
ID=18191292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32675290A Expired - Lifetime JPH0719786B2 (en) | 1990-11-27 | 1990-11-27 | Method for manufacturing semiconductor chip carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719786B2 (en) |
-
1990
- 1990-11-27 JP JP32675290A patent/JPH0719786B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0719786B2 (en) | 1995-03-06 |
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