JPH04199655A - Vacuum piping of vacuum-chuck wafer holding device - Google Patents

Vacuum piping of vacuum-chuck wafer holding device

Info

Publication number
JPH04199655A
JPH04199655A JP2326002A JP32600290A JPH04199655A JP H04199655 A JPH04199655 A JP H04199655A JP 2326002 A JP2326002 A JP 2326002A JP 32600290 A JP32600290 A JP 32600290A JP H04199655 A JPH04199655 A JP H04199655A
Authority
JP
Japan
Prior art keywords
vacuum
chuck
wafer
suction
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2326002A
Other languages
Japanese (ja)
Other versions
JP2975097B2 (en
Inventor
Koji Marumo
丸茂 光司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP32600290A priority Critical patent/JP2975097B2/en
Priority to US07/798,812 priority patent/US5203547A/en
Priority to EP91311001A priority patent/EP0488722B1/en
Priority to DE69117680T priority patent/DE69117680T2/en
Publication of JPH04199655A publication Critical patent/JPH04199655A/en
Application granted granted Critical
Publication of JP2975097B2 publication Critical patent/JP2975097B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To make a pressure difference between a suction pressure and an atmospheric pressure large enough to hold a wafer by sucking by a method wherein vacuum lines are branched off from a vacuum suction line, and throttling valves are provided between the distributor of vacuum-chuck wafer holding devices and valves. CONSTITUTION:The suction line 3 of a pump 1 is connected to a distributor 2, where the line 3 is branched off into four vacuum lines 15, 25, 35, and 45 which communicate with transfer chucks 11, 21, and 31 and a wafer chuck 41 respectively, and throttle valves 14, 24, 34, and 44 are provided to the vacuum lines 15, 25, 35, and 45. Therefore, when a vacuum-chuck wafer holding device holds a wafer by sucking, gas of high pressure can be restrained from flowing into the wafer holding device concerned from other vacuum-chuck wafer holding devices by the throttle valve. By this setup, a pressure difference between a suction pressure and an atmospheric pressure can be set large enough constantly to hold a wafer by sucking, so that a wafer transferring action can be safely carried out.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体露光装置に用いられる真空吸着方式の基
板保持装置と真空吸着用吸着源とを連結する真空配管に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum piping that connects a vacuum suction type substrate holding device and a suction source for vacuum suction used in a semiconductor exposure apparatus.

[従来の技術] 真空吸着方式によってウェハを保持する従来の基板保持
装置の一例を第3図に示す。
[Prior Art] FIG. 3 shows an example of a conventional substrate holding device that holds a wafer using a vacuum suction method.

第3図に示すようにウェハ61を吸着保持する搬送チャ
ック51が、該搬送チャック51を2方向(紙面に対し
て垂直な方向)に移動させるZステージ54とX方向(
図中左右方向)に移動するXステージ53とからなる基
板搬送装置に取付けられており、該基板搬送装置が移動
することによって、前記搬送チャック51と、同様にウ
ェハ61を吸着保持する露光用のウェハチャック52と
の間の前記ウェハ61の受渡しを行なう構成となってお
り、前記基板搬送装置および搬送チャック51とウェハ
チャック52は減圧雰囲気の真空チャンバ62内に収容
されている。
As shown in FIG. 3, a transport chuck 51 that sucks and holds a wafer 61 is connected to a Z stage 54 that moves the transport chuck 51 in two directions (directions perpendicular to the plane of the paper) and in an X direction (
It is attached to a substrate transport device consisting of an The wafer 61 is transferred to and from the wafer chuck 52, and the substrate transfer device, the transfer chuck 51, and the wafer chuck 52 are housed in a vacuum chamber 62 in a reduced pressure atmosphere.

前記搬送チャック51は、真空ライン55、バルブ57
およびディストリビュータ59を介して、真空チャンバ
62の外部に配置されているポンプ60に連結され、ま
た、ウェハチャック52は、真空ライン56、バルブ5
8およびディストリビュータ59を介してポンプ60に
連結されており、搬送チャック51およびウェハチャ・
ツク52共にポンプ60による吸引動作によってウェハ
61を着脱する。前記バルブ57.58は、共に三方弁
であり、それぞれ、搬送チャック51とポンプ60、ウ
ェハチャック52とポンプ60を連通させる(a)状態
と、搬送チャック51と真空チャンバ62内の雰囲気(
以下チャンバ雰囲気という)、ウェハチャック52とチ
ャンバ雰囲気を連通させる(b)状態とに切換えが可能
である。
The transport chuck 51 has a vacuum line 55 and a valve 57.
The wafer chuck 52 is connected to a pump 60 disposed outside the vacuum chamber 62 via a distributor 59 and a vacuum line 56 , a valve 5
8 and a pump 60 via a distributor 59, and is connected to a pump 60 via a transfer chuck 51 and a wafer chuck.
The wafer 61 is attached and detached from both the hook 52 and the wafer 61 by a suction operation by the pump 60. The valves 57 and 58 are both three-way valves, and are used to communicate the transfer chuck 51 and the pump 60, the wafer chuck 52 and the pump 60 (a), and the atmosphere (a) in the transfer chuck 51 and the vacuum chamber 62, respectively.
(hereinafter referred to as chamber atmosphere), and the state (b) in which the wafer chuck 52 and the chamber atmosphere are communicated.

ここで、搬送チャック51からウェハチャック52ヘウ
エハ61を受渡す場合について説明する。
Here, the case where the wafer 61 is transferred from the transport chuck 51 to the wafer chuck 52 will be described.

まず、搬送チャック51によってウェハ61を吸着する
ため、バルブ57を(a)状態、すなわち搬送チャック
51がポンプ60と連通する状態として該ポンプ60を
作動させ、前記搬送チャック51によってウェハ61を
吸着保持する。このとき、バルブ58は(b)状態とし
、ウェハチャック52はチャンバ雰囲気に連通した状態
となっており、真空ライン56内の圧力はチャンバ雰囲
気圧力と同じになっている。
First, in order to suck the wafer 61 by the transfer chuck 51, the valve 57 is set to the (a) state, that is, the transfer chuck 51 communicates with the pump 60, and the pump 60 is operated, and the transfer chuck 51 holds the wafer 61 by suction. do. At this time, the valve 58 is in the state (b), the wafer chuck 52 is in communication with the chamber atmosphere, and the pressure in the vacuum line 56 is the same as the chamber atmosphere pressure.

次に、Xステージ53を駆動して、搬送チャック51で
吸着保持しているウェハ61をウェハチャック52のチ
ャック面上まで移動させる。その後、Zステージ54を
駆動して、前記ウェハ61がウェハチャック52のチャ
ック面に接する位置まで搬送チャックを移動させる。そ
して、ウェハ61がウェハチャック52のチャック面に
接した状態で、バルブ58を(a)状態に切換えると、
ウェハ61はウェハチャック52によって吸着される。
Next, the X stage 53 is driven to move the wafer 61 held by the transport chuck 51 onto the chuck surface of the wafer chuck 52. Thereafter, the Z stage 54 is driven to move the transport chuck to a position where the wafer 61 contacts the chuck surface of the wafer chuck 52. Then, when the valve 58 is switched to the state (a) with the wafer 61 in contact with the chuck surface of the wafer chuck 52,
The wafer 61 is attracted by the wafer chuck 52.

このとき、ウェハ61は、ウェハチャック52とともに
搬送チャック51についても吸着された状態となってい
るので、バルブ57を(b)状態に切換えて搬送チャッ
ク51をチャンバ雰囲気と連通させて該搬送チャック5
1の吸着力を無くし、搬送チャック51からウェハ61
を離脱させる。ウェハ61がウェハチャック52のみで
吸着された状態になると、前記2ステージ54およびX
ステージ53を順に駆動して搬送チャック51を元の位
置まで戻し、ウェハ61のウニハチやツク52への受渡
しが完了したことになる。
At this time, the wafer 61 is attracted to the transport chuck 51 as well as the wafer chuck 52, so the valve 57 is switched to the state (b) to communicate the transport chuck 51 with the chamber atmosphere, and the transport chuck 51
The suction force of 1 is eliminated, and the wafer 61 is removed from the transport chuck 51.
to leave. When the wafer 61 is attracted only by the wafer chuck 52, the two stages 54 and
The stages 53 are sequentially driven to return the transport chuck 51 to its original position, and the transfer of the wafer 61 to the sea urchin hachi and the tsuk 52 is completed.

また、ウェハチャック52で保持したウェハ61につい
ての露光が終了すると、再びXステージおよび2ステー
ジ54を駆動して搬送チャック51を、ウェハチャック
52の位置まで移動させて、ウェハ61のウェハチャッ
ク52から搬送チャック51への受渡しを行なう。この
場合、上述した搬送チャック51からウェハチャック5
2への受渡しの場合と逆の動作を行なうことで、ウェハ
61をウェハチャック52から搬送チャック51へ受渡
すことができる。
When the exposure of the wafer 61 held by the wafer chuck 52 is completed, the X stage and the second stage 54 are driven again to move the transport chuck 51 to the position of the wafer chuck 52, and the wafer 61 is moved from the wafer chuck 52. Transfer to the transport chuck 51 is performed. In this case, from the above-described transport chuck 51 to the wafer chuck 5
The wafer 61 can be transferred from the wafer chuck 52 to the transport chuck 51 by performing the reverse operation to the transfer to the transfer chuck 51.

[発明が解決しようとする課題] しかしながら、上記従来の技術では、基板保持装置間で
基板の受渡しを行なう際、例えば前述の搬送チャック5
1からウェハチャック52ヘウエハ61を受渡す際、該
ウェハチャック52を吸着状態にするため、バルブ58
を切換えることによって前記ウェハチャック52をポン
プ60と連通させるが、該ウェハチャック52に通して
いる真空ライン56はそれ以前にチャンバ雰囲気と同圧
力となっており、バルブ58が切換えられた際、圧力の
高い気体かディストリビュータ59に流入し、ディスト
リビュータ59の圧力が高くなる。その結果、該搬送チ
ャック51の圧力が高くなるため吸着力が弱まることに
なる。これによって搬送チャック51とチャンバ雰囲気
との差圧が充分でなくなると、基板を落下させてしまう
という問題点かある。
[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, when transferring a substrate between substrate holding devices, for example, the above-mentioned transfer chuck 5
When transferring the wafer 61 from the wafer chuck 52 to the wafer chuck 52, the valve 58
By switching the valve 58, the wafer chuck 52 is brought into communication with the pump 60, but the vacuum line 56 passing through the wafer chuck 52 had previously been at the same pressure as the chamber atmosphere, and when the valve 58 was switched, the pressure The gas having a high temperature flows into the distributor 59, and the pressure in the distributor 59 becomes high. As a result, the pressure of the transport chuck 51 increases, and the suction force weakens. As a result, if the differential pressure between the transport chuck 51 and the chamber atmosphere becomes insufficient, there is a problem that the substrate may fall.

本発明は、上J己従来の技術か有する問題点に鑑みてな
されたもので、真空吸着基板保持装置が基板を吸着保持
している際の吸引圧力と雰囲気圧力との差圧を、基板の
吸着保持に充分なものに保ち得る、真空吸着基板保持装
置の真空配管を提供することを目的としている。
The present invention has been made in view of the problems that exist in the conventional technology, and is based on the pressure difference between the suction pressure and the atmospheric pressure when the vacuum suction substrate holding device is suctioning and holding the substrate. It is an object of the present invention to provide vacuum piping for a vacuum suction substrate holding device that can be maintained sufficiently for suction and holding.

[課題を解決するための手段] 本発明は、真空吸着用の吸引源の吸引ラインからディス
トリビュータによって分配されて複数の真空吸着基板保
持装置それぞれに連結され、前記各真空吸着基板保持装
置に対して基板を着脱させる真空吸着基板保持装置のバ
ルブが介在されている真空配管において、 前記ディストリビュータとバルブとの間に絞り弁を配し
たものであり、 前記真空吸着基板保持装置バルブとの間に、該真空吸着
基板保持装置の吸引圧力を検知するためのバキュームセ
ンサを配した。
[Means for Solving the Problems] The present invention provides a suction source for vacuum suction that is distributed by a distributor from a suction line of a suction source and connected to each of a plurality of vacuum suction substrate holding devices, and that is connected to each of the vacuum suction substrate holding devices. In a vacuum piping in which a valve of a vacuum suction substrate holding device for attaching and detaching a substrate is interposed, a throttle valve is arranged between the distributor and the valve, and a throttle valve is arranged between the valve of the vacuum suction substrate holding device and the valve of the vacuum suction substrate holding device. A vacuum sensor was installed to detect the suction pressure of the vacuum suction substrate holding device.

[作用] 本発明の真空吸着基板保持装置の真空配管は、真空吸着
基板保持装置が基板を吸着保持している際、他の真空吸
着基板保持装置側からの圧力の高い気体の流入を、絞り
弁によって抑えることができる。また、この絞り弁は、
バルブとディストリビュータとの間に配されているので
、真空吸着基板保持装置から基板を離脱させるために、
該真空吸着基板保持装置の吸引圧力と雰囲気圧力との差
を無くす際、絞り弁を介すことなく気体を流通させるこ
とができる。
[Function] The vacuum piping of the vacuum suction substrate holding device of the present invention throttles the inflow of high pressure gas from other vacuum suction substrate holding devices when the vacuum suction substrate holding device is holding a substrate by suction. It can be suppressed by a valve. In addition, this throttle valve is
It is placed between the valve and the distributor, so in order to remove the substrate from the vacuum suction substrate holding device,
When eliminating the difference between the suction pressure of the vacuum suction substrate holding device and the atmospheric pressure, gas can be made to flow without using a throttle valve.

[実施例] 次に、本発明の実施例について図面を参照して説明する
[Example] Next, an example of the present invention will be described with reference to the drawings.

第1図は本発明の真空吸着基板保持装置の真空配管の一
実施例を示す図である。
FIG. 1 is a diagram showing an embodiment of the vacuum piping of the vacuum suction substrate holding device of the present invention.

本実施例では、搬送チャック11,21.31およびウ
ェハチャック41の4個の真空吸着基板保持装置を不図
示の真空チャンバ内に収容したものである。搬送チャッ
ク11,21.31およびウェハチャック41は、真空
チャンバ外に配されたポンプ1の吸引動作中に、前記各
搬送チャック11.21・、31およびウェハチャック
41にそれぞれ連通する真空ライン15,25.35お
よび45に配されたバルブ13,23,33.43を開
閉させることによって、前記搬送チャック11.21.
31およびウェハチャック41の基板の着脱を行なって
、基板の搬送および相互間での受渡しを行なう。
In this embodiment, four vacuum suction substrate holding devices, ie, transport chucks 11, 21, 31, and wafer chuck 41, are housed in a vacuum chamber (not shown). During the suction operation of the pump 1 disposed outside the vacuum chamber, the transfer chucks 11, 21.31 and the wafer chuck 41 are connected to a vacuum line 15, which communicates with the transfer chucks 11, 21, 31 and the wafer chuck 41, respectively. By opening and closing the valves 13, 23, 33.43 disposed on the conveyance chucks 11.21.25.35 and 45.
31 and wafer chuck 41, and transport and transfer the substrates between them.

前記ポンプ1の吸引ライン3はディストリビュータ2に
連結されて、該ディストリビュータ2において、搬送チ
ャック11.21.31およびウェハチャック41へ通
しる4つの真空ライン15.25,35.45に分配さ
れている。各真空ランイ15,25,35.45上には
、それぞれ前記ディストリビュータ2側から順に、絞り
弁14.24,34.44とバルブ13゜23.33.
43か配設されており、さらに、各バルブ13.23,
33.43と各搬送チャック11.21.31およびウ
ェハチャック41との間には、各基板保持装置の吸引圧
力を検知するバキュームセンサ12,22,32.42
がそれぞれ配設されている。また、各バルブ13,23
゜33.43は、何れも三方弁であり、それぞれ、各搬
送チャック11,21.31およびウェハチャック41
を、前記ポンプ1に通じさせる(a)状態と真空チャン
バ内雰囲気圧力に開放する(b)状態との切換えを行な
うものであり、前記ポンプ1の吸引動作中に各バルブ1
3.23,33.43を、(a)状態にすることで、各
搬送チャック11.21.31およびウェハチャック4
1は基板を吸着することができ、(b)状態にすれば基
板の吸着が解除され該基板を離脱させることができる。
The suction line 3 of the pump 1 is connected to a distributor 2 in which it is distributed into four vacuum lines 15.25, 35.45 leading to the transport chuck 11.21.31 and the wafer chuck 41. . On each vacuum line 15, 25, 35.45, in order from the distributor 2 side, there are throttle valves 14.24, 34.44 and valves 13.23.33.
43 valves are arranged, and each valve 13.23,
33.43 and each transfer chuck 11.21.31 and wafer chuck 41, there are vacuum sensors 12, 22, 32.42 that detect the suction pressure of each substrate holding device.
are arranged respectively. In addition, each valve 13, 23
゜33.43 are all three-way valves, and are used for each transfer chuck 11, 21.31 and wafer chuck 41, respectively.
The valves 1 are switched between the state (a) in which the valves are opened to the pump 1 and the state (b) in which the valves are opened to the atmospheric pressure in the vacuum chamber.
By setting 3.23, 33.43 to state (a), each transport chuck 11, 21, 31 and wafer chuck 4
1 is capable of adsorbing a substrate, and in state (b), the adsorption of the substrate is released and the substrate can be detached.

前記絞り弁14.24,34.44は、前記バルブ13
.23.33.43の何れかを開閉させた際、他の搬送
チャックあるいはウェハチャックの圧力上昇を少なくす
るために設けたものである。
The throttle valves 14.24, 34.44 are connected to the valve 13.
.. This is provided in order to reduce the pressure increase in other transfer chucks or wafer chucks when any one of the chucks 23, 33, and 43 is opened or closed.

この絞り弁14,24,34.44を配置する位置とし
ては、前述のようにバキュームセンサ12,22,32
.42およびバルブ13゜23.33.43がそれぞれ
に設けられている真空ライン15,25,35.45に
おいては、第2図に示すように、搬送チャック11.2
1゜31およびウェハチャック41とバキュームセンサ
12,22,32.42との間(位置の)、バキューム
センサ12,22,32.42とバルブ13.23.3
3.43との間(位置■)、バルブ13,23.33.
43とディストリビュータ2との間(位置■)の3通り
が考えられ、本発明では各絞り弁14,24,34.4
4を、バルブ13.23.33.43とディストリビュ
ータ2との間(位置■)に配置している。
As for the position where the throttle valves 14, 24, 34, 44 are arranged, the vacuum sensors 12, 22, 32,
.. In the vacuum lines 15, 25, 35.45, which are respectively provided with a valve 13.42 and a valve 13.33.43, as shown in FIG.
1° 31 and between the wafer chuck 41 and the vacuum sensor 12, 22, 32.42 (position), the vacuum sensor 12, 22, 32.42 and the valve 13.23.3
3.43 (position ■), valve 13, 23.33.
43 and the distributor 2 (position ■). In the present invention, each throttle valve 14, 24, 34.4
4 is arranged between the valve 13.23.33.43 and the distributor 2 (position ■).

ここで、上述した3箇所に絞り弁を配置した場合につい
て説明する。
Here, a case will be described in which throttle valves are arranged at the three locations mentioned above.

まず、位置■の場合、各チャックとバキュームセンサと
の間に絞り弁による圧力の低下部分が存在するため、該
バキュームセンサは各チャックの真空圧を示さず、前記
絞り弁よりポンプ側の真空度の高い部分の圧力を示すこ
とになる。この場合、チャック面での真空圧が基板の吸
着に要する圧力に達しておらず雰囲気圧力との差圧が充
分でない可能性が高く、基板を落下させてしまうことが
考えられる。
First, in the case of position (3), since there is a pressure drop part due to the throttle valve between each chuck and the vacuum sensor, the vacuum sensor does not indicate the vacuum pressure of each chuck, but the vacuum level on the pump side from the throttle valve. This indicates the pressure at the high point. In this case, there is a high possibility that the vacuum pressure on the chuck surface has not reached the pressure required to attract the substrate and the differential pressure with the atmospheric pressure is insufficient, and the substrate may fall.

また、位置■に配置した場合、バキュームセンサは、絞
り弁よりチャック側になるため、各チャックの真空圧を
示すことになるか、基板をチャックによる吸着状態から
解除するためにバルブを切換えて雰囲気圧力に開放する
際、バルブよりチャック側に絞り弁かあるので、雰囲気
圧力になるまでの時間がかかりスルーブツト低下の原因
となる。位置■に配置した場合、バキュームセンサは、
絞り弁よりチャック側になるため、各チャックの真空圧
を示すことになり、さらに、バルブを開放した際も、バ
ルブか各チャック側となっているので、各チャック面の
圧力は短時間で雰囲気圧力に達することになり、上述の
ような位置■、■に配置した場合の悪影響が除去され最
適なものとなる。
In addition, when placed in position ■, the vacuum sensor is closer to the chuck than the throttle valve, so it either indicates the vacuum pressure of each chuck, or it can be used to switch the valve to release the substrate from the chuck's suction state. When opening to pressure, since the throttle valve is located closer to the chuck than the valve, it takes time to reach atmospheric pressure, which causes throughput to drop. When placed in position ■, the vacuum sensor is
Since it is on the chuck side compared to the throttle valve, it indicates the vacuum pressure of each chuck.Furthermore, even when the valve is opened, since it is on the valve or each chuck side, the pressure on each chuck surface quickly changes to the atmosphere. The pressure is reached, and the adverse effects caused by the above-mentioned positions (1) and (3) are eliminated and the pressure is optimized.

次に、本実施例による基板の受渡し動作について説明す
る。
Next, the board transfer operation according to this embodiment will be explained.

本実施例では3つの搬送チャック11,21゜31とウ
ェハチャック41とを備えているが、各チャック間の基
板の受渡し動作は同様に行なうことかできるので、ここ
では搬送チャック11から搬送チャック21への受渡し
について説明する。
In this embodiment, three transport chucks 11, 21° 31 and a wafer chuck 41 are provided, but since the transfer operation of the substrate between each chuck can be performed in the same way, here, the transport chuck 11 to the transport chuck 21 is provided. This section explains the transfer to.

まず、ポンプ1を吸引動作状態とし、搬送チャック11
に連通ずる真空ライン15上のバルブ13を(a)状態
にする。この状態で、搬送チャック11は、真空ライン
15を介してポンプ1に通した状態となって吸着力が発
生しており、ウェハ61を吸着保持しているものとする
。このとき、他のバルブ23.33.43は(b)状態
とし、搬送チャック21.31およびウェハチャック4
1は何れも真空チャンバ内の雰囲気圧力と同等になって
いる。
First, the pump 1 is put into a suction operation state, and the transport chuck 11 is
The valve 13 on the vacuum line 15 communicating with is set to the state (a). In this state, the transport chuck 11 is passed through the pump 1 via the vacuum line 15, and a suction force is generated, so that the wafer 61 is suctioned and held. At this time, the other valves 23, 33, and 43 are in the (b) state, and the transfer chuck 21.31 and the wafer chuck 4 are
1 is equal to the atmospheric pressure inside the vacuum chamber.

この状態で搬送チャック11から搬送チャック21へ基
板を受渡す場合、該搬送チャック21へ連通する真空ラ
イン25上に配されたバルブ23を(a)状態とし、搬
送チャック21とポンプ1とを通じさせて該搬送チャッ
ク21に吸着力を発生させる。このとき、搬送チャック
21は真空チャンバ内雰囲気と同等な圧力であったため
、圧力の高い気体が搬送チャック21から真空ライン2
5を通フてディストリビュータ2へ移動し、この圧力の
高い気体によって、基板を吸着保持している搬送チャッ
ク21の吸着圧力が高くなって吸着力が弱まり、保持し
ている基板を落下させてしまう可能性があるが、搬送チ
ャック11の真空ライン15上でディストリビュータ2
とバルブ13との間に配した絞り弁14により圧力の高
い気体の搬送チャック21側への影響を小さくすること
かできる。
When transferring the substrate from the transfer chuck 11 to the transfer chuck 21 in this state, the valve 23 disposed on the vacuum line 25 communicating with the transfer chuck 21 is set to the state (a) to allow the transfer chuck 21 and the pump 1 to communicate. This causes the transport chuck 21 to generate suction force. At this time, since the pressure in the transfer chuck 21 was equivalent to the atmosphere inside the vacuum chamber, high pressure gas was transferred from the transfer chuck 21 to the vacuum line 2.
5 and moves to the distributor 2, and this high-pressure gas increases the suction pressure of the transport chuck 21 that holds the substrate by suction, weakening the suction force and causing the held substrate to fall. There is a possibility that the distributor 2
The throttle valve 14 disposed between the valve 13 and the valve 13 can reduce the influence of high-pressure gas on the transport chuck 21 side.

この場合、絞り弁14のコンダクタンスを小さくすれば
、悪影響をより小さいものとすることができるが、搬送
チャック11の吸着面とチャンバ内雰囲気との差圧を、
基板の吸着保持に要するものに確保する際のスルーブツ
トの低下を考慮する必要がある。
In this case, if the conductance of the throttle valve 14 is made smaller, the negative effect can be made smaller;
It is necessary to take into consideration the reduction in throughput required for suctioning and holding the substrate.

次に、搬送チャック11により、吸着保持している基板
を搬送チャック21の吸着面上に移動させて、該基板を
搬送チャック11と搬送チャック21との二つの保持装
置で吸着した状態とする。
Next, the substrate being sucked and held by the transfer chuck 11 is moved onto the suction surface of the transfer chuck 21, so that the substrate is suctioned by the two holding devices, the transfer chuck 11 and the transfer chuck 21.

つづいて、基板を搬送チャック21のみで保持させるた
め、バルブ13を(b)状態にして、搬送チャック11
の吸着面の圧力を真空チャンバ内雰囲気圧力との差圧を
無くする。このとき、搬送チャック11に連通ずる真空
ライン15上で、絞り弁14がバルブ13より搬送チャ
ック11側に配されていると、差圧が無くなるまでに時
間かかかってスルーブツトを悪くしてしまうか、本実施
例の場合、前述のようにバルブ13よりポンプ1側に配
されているので問題はない。
Next, in order to hold the substrate only by the transport chuck 21, the valve 13 is set to the state (b), and the transport chuck 11
Eliminate the pressure difference between the pressure on the adsorption surface and the atmospheric pressure in the vacuum chamber. At this time, if the throttle valve 14 is placed closer to the transfer chuck 11 than the valve 13 on the vacuum line 15 that communicates with the transfer chuck 11, it may take a long time for the differential pressure to disappear, resulting in poor throughput. In the case of this embodiment, there is no problem because the valve 13 is disposed closer to the pump 1 than the valve 13 as described above.

このように、搬送チャック11の吸着面とチャンバ雰囲
気の差圧を無くすることにより、該搬送チャック11の
吸着か無くなって、基板は搬送チャック21のみで吸着
保持したものとなり、基板が受渡されたことになる。
In this way, by eliminating the differential pressure between the suction surface of the transport chuck 11 and the chamber atmosphere, the suction of the transport chuck 11 is eliminated, and the substrate is held by suction only by the transport chuck 21, and the substrate is transferred. It turns out.

[発明の効果コ 本発明は、以上説明したように構成されているので下J
己のような効果を奏する。
[Effects of the Invention] Since the present invention is configured as explained above,
Produces an effect similar to oneself.

(1)真空吸着基板保持装置によって基板を吸着保持し
ている際、他の真空吸着基板保持装置側からの圧力の高
い気体の流れ込みを抑えることかできるので、真空吸着
基板保持装置の吸引圧力と雰囲気圧力との差圧を、常に
、基板の吸着保持のために充分なものとすることができ
、前J己真空吸着基板保持装置による基板の搬送あるい
は真空吸着基板保持装置相互間での基板の受渡し等の動
作を確実かつ安全に行なうことが可能となる。
(1) When a vacuum suction substrate holding device is holding a substrate by suction, it is possible to suppress the flow of high pressure gas from other vacuum suction substrate holding devices, so the suction pressure of the vacuum suction substrate holding device can be reduced. The pressure difference between the atmospheric pressure and the atmospheric pressure can always be made sufficient for suction and holding of the substrate. Operations such as delivery can be performed reliably and safely.

(2)絞り弁は、真空配管上において、バルブとディス
トリビュータとの間に配されており、真空吸着基板保持
装置から基板を離脱させるためバルブを操作して前記真
空吸着基板保持装置の吸引圧力を雰囲気圧力と同等にす
る際、気体は航記較り弁を介することなく流通するので
、スルーブツトを向上させることができる。
(2) The throttle valve is arranged between the valve and the distributor on the vacuum piping, and operates the valve to increase the suction pressure of the vacuum suction substrate holding device in order to detach the substrate from the vacuum suction substrate holding device. When the pressure is made equal to the atmospheric pressure, the gas flows without passing through the navigation valve, so the throughput can be improved.

(3)請求項第2項に記載したもののように、バキュー
ムセンサをバルブと真空吸着基板保持装置との間に配す
ることにより、真空吸着面の吸着圧力を正確に検出する
ことができるので、真空吸着基板保持装置による基板の
吸着状態の良否を確認することが可能となり、基板の搬
送および受渡し動作の確実性および安全性がより高いも
のになり基板保持装置としての信頼性が向上する。
(3) As described in claim 2, by disposing a vacuum sensor between the valve and the vacuum suction substrate holding device, the suction pressure of the vacuum suction surface can be accurately detected. It becomes possible to check the quality of the adsorption state of the substrate by the vacuum adsorption substrate holding device, and the reliability and safety of the substrate conveyance and delivery operations are improved, and the reliability of the substrate holding device is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の、真空吸着基板保持装置の真空配管の
一実施例を示す図、第2図は絞り弁の配置位置を示す図
、第3図は従来の真空吸着基板保持装置の真空配管の一
例を示す図である。 1−・ポンプ、 2−・ディストリビュータ、 3・−吸引ライン、 11.21.31−・・搬送チャック、12.22.3
2.42−−バキュームセンサ、13.23.33.4
3−・バルブ、 14.24,34.44−一絞り弁、 15.25.35.45−一真空ライン、41−・ウェ
ハチャック。 特許出願人  キャノン株式会社
FIG. 1 is a diagram showing an embodiment of the vacuum piping of the vacuum suction substrate holding device of the present invention, FIG. 2 is a diagram showing the arrangement position of the throttle valve, and FIG. 3 is a diagram showing the vacuum piping of the conventional vacuum suction substrate holding device. It is a figure showing an example of piping. 1--Pump, 2--Distributor, 3--Suction line, 11.21.31--Transportation chuck, 12.22.3
2.42--Vacuum sensor, 13.23.33.4
3--Valve, 14.24, 34.44--One throttle valve, 15.25.35.45--One vacuum line, 41--Wafer chuck. Patent applicant Canon Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 1.真空吸着用の吸引源の吸引ラインからディストリビ
ュータによって分配されて複数の真空吸着基板保持装置
それぞれに連結され、前記各真空吸着基板保持装置に対
して基板を着脱させる真空吸着基板保持装置のバルブが
介在されている真空配管において、 前記ディストリビュータとバルブとの間に絞り弁を配し
たことを特徴とする、真空吸着基板保持装置の真空配管
1. Distributed by a distributor from a suction line of a suction source for vacuum suction and connected to each of a plurality of vacuum suction substrate holding devices, with a valve of the vacuum suction substrate holding device intervening for attaching and detaching the substrate to each of the vacuum suction substrate holding devices. A vacuum piping for a vacuum suction substrate holding device, characterized in that a throttle valve is arranged between the distributor and the valve.
2.真空吸着基板保持装置とバルブとの間に、該真空吸
着基板保持装置の吸引圧力を検知するためのバキューム
センサを配したことを特徴とする請求項1記載の、真空
吸着基板保持装置の真空配管。
2. 2. The vacuum piping of the vacuum suction substrate holding device according to claim 1, further comprising a vacuum sensor disposed between the vacuum suction substrate holding device and the valve for detecting the suction pressure of the vacuum suction substrate holding device. .
JP32600290A 1990-11-29 1990-11-29 Vacuum piping of vacuum suction substrate holding device Expired - Fee Related JP2975097B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP32600290A JP2975097B2 (en) 1990-11-29 1990-11-29 Vacuum piping of vacuum suction substrate holding device
US07/798,812 US5203547A (en) 1990-11-29 1991-11-27 Vacuum attraction type substrate holding device
EP91311001A EP0488722B1 (en) 1990-11-29 1991-11-28 Vacuum attraction type substrate holding device
DE69117680T DE69117680T2 (en) 1990-11-29 1991-11-28 Vacuum type device for holding a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32600290A JP2975097B2 (en) 1990-11-29 1990-11-29 Vacuum piping of vacuum suction substrate holding device

Publications (2)

Publication Number Publication Date
JPH04199655A true JPH04199655A (en) 1992-07-20
JP2975097B2 JP2975097B2 (en) 1999-11-10

Family

ID=18183000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32600290A Expired - Fee Related JP2975097B2 (en) 1990-11-29 1990-11-29 Vacuum piping of vacuum suction substrate holding device

Country Status (1)

Country Link
JP (1) JP2975097B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5586159A (en) * 1994-03-28 1996-12-17 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus having the same
JP2017027968A (en) * 2015-07-15 2017-02-02 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and recording medium
CN108305848A (en) * 2018-01-12 2018-07-20 昆山成功环保科技有限公司 A kind of wafer automatic station-keeping system and the loading machine including it
JP2019057706A (en) * 2017-09-19 2019-04-11 キヤノン株式会社 Substrate transfer apparatus, lithography apparatus, and article manufacturing method
WO2022014509A1 (en) * 2020-07-17 2022-01-20 ファナック株式会社 Vacuum pressure supply system
JP2024167358A (en) * 2020-03-31 2024-12-03 キヤノン株式会社 TRANSPORTATION APPARATUS, TRANSPORTATION METHOD, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC SYSTEM, AND ARTICLE MANUFACTURING METHOD

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5586159A (en) * 1994-03-28 1996-12-17 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus having the same
JP2017027968A (en) * 2015-07-15 2017-02-02 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and recording medium
JP2019057706A (en) * 2017-09-19 2019-04-11 キヤノン株式会社 Substrate transfer apparatus, lithography apparatus, and article manufacturing method
CN108305848A (en) * 2018-01-12 2018-07-20 昆山成功环保科技有限公司 A kind of wafer automatic station-keeping system and the loading machine including it
JP2024167358A (en) * 2020-03-31 2024-12-03 キヤノン株式会社 TRANSPORTATION APPARATUS, TRANSPORTATION METHOD, LITHOGRAPHIC APPARATUS, LITHOGRAPHIC SYSTEM, AND ARTICLE MANUFACTURING METHOD
WO2022014509A1 (en) * 2020-07-17 2022-01-20 ファナック株式会社 Vacuum pressure supply system

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