JPH04211908A - Manufacture and device of wafer - Google Patents
Manufacture and device of waferInfo
- Publication number
- JPH04211908A JPH04211908A JP1808691A JP1808691A JPH04211908A JP H04211908 A JPH04211908 A JP H04211908A JP 1808691 A JP1808691 A JP 1808691A JP 1808691 A JP1808691 A JP 1808691A JP H04211908 A JPH04211908 A JP H04211908A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor ingot
- grindstone
- spindle
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 abstract description 9
- 230000001815 facial effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【産業上の利用分野】この発明は半導体の製造工程にお
いて、半導体の材料を薄片状のウエハーに切断するウエ
ハーの製造方法並びに装置に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer manufacturing method and apparatus for cutting semiconductor material into thin wafers in a semiconductor manufacturing process.
【従来の技術】従来、シリコン等の材料（半導体インゴ
ットという）をウエハーに切断するには、主として高速
回転する内周刃に、半導体インゴットを押し付ける方法
によっていたが、切断刃の保持方法、両刃面の切断性能
のアンバランス、クーラント、風圧の不均一等の原因に
より切断面の平面度、従って切断されたウエハーの面精
度を上げることが困難であった。特に近来、生産効率を
向上させるために半導体インゴットの径を大きくする、
いわゆる、大口径化の技術的要請が強いが、大口径化す
る程、これに伴ってウエハーの両面のそり（平面度誤差
）が大となる点が問題になってきている。また、ウエハ
ーのそりが大きく、面精度が悪いと、後工程の研削、ラ
ッピング加工における修正、仕上げに多大の工数と経費
と有し、必ずしも満足な面精度が得られなかった。[Prior Art] Conventionally, in order to cut materials such as silicon (referred to as semiconductor ingots) into wafers, the semiconductor ingot was mainly pressed against a high-speed rotating internal blade. It has been difficult to improve the flatness of the cut surface and, therefore, the surface precision of the cut wafer due to unbalanced cutting performance, uneven coolant and wind pressure, and other causes. Especially in recent years, the diameter of semiconductor ingots has been increased to improve production efficiency.
There is a strong technical demand for a larger diameter, but the problem is that the larger the diameter, the greater the warpage (flatness error) on both sides of the wafer. Further, if the wafer has a large warpage and the surface precision is poor, a large amount of man-hours and expense are required for post-process grinding, correction in lapping, and finishing, and a satisfactory surface precision cannot always be obtained.
【発明の概要】本発明は、少なくともウエハーの片面の
平面度を飛躍的に改善する方法並びに装置を提供するも
のである。本発明は、半導体インゴットからウエハーを
切断するスライシング機の切断機能に半導体インゴット
の端面を平面研削する機能を付加し、即ち、１台の機械
で切断加工と半導体インゴットの端面研削加工を行い、
切断されたウエハーの片面の平面度を高精度に仕上げる
ことを可能とするもので、半導体インゴットは、端面研
削と切断とが交互に行われる。SUMMARY OF THE INVENTION The present invention provides a method and apparatus for dramatically improving the flatness of at least one side of a wafer. The present invention adds a function of surface grinding the end face of the semiconductor ingot to the cutting function of a slicing machine that cuts wafers from the semiconductor ingot, that is, performs cutting and end face grinding of the semiconductor ingot with one machine.
It is possible to finish the flatness of one side of a cut wafer with high precision, and the semiconductor ingot is alternately subjected to end face grinding and cutting.
【実施例】以下、本発明の方法並びに装置の実施例を図
面を参照して説明する。図１に、内周刃のブレードをス
ピンドルに取付けた横型スライシング機に適用した実施
例を示す。図において、半導体インゴット１は、スピン
ドル７に取付けられ、高速回転する内周刃のブレード６
に対して図示しない保持機構、送り機構により、矢印Ｂ
、Ａ方向に移動して薄片状のウエハーに切断される。
図に於いて、横型スライシング機に於いて、内周刃のブ
レード６は高速回転するスピンドル７に張設され、高速
回転される。半導体インゴット１は図示しない保持機構
、送り機構により、矢印Ａ方向に移動して薄片状のウエ
ハーに切断される。横型スライシングの同一機上で、ブ
レード６のスピンドル７の外側に近接して砥石軸８Ａを
設け、砥石軸８Ａの先端に端面研削用砥石８を設けて半
導体インゴット１の端面方向に向ける。半導体インゴッ
ト１の移動機構の移動ストロークを大きくして、切断加
工の直前に、半導体インゴット１を、図１の１点鎖線で
示すように砥石８の位置に移動させて、端面研削を行い
、半導体インゴット１を矢印Ｄ、Ｃ、Ｂと移動させ、ブ
レード６の中央開口部に送り込み、矢印Ａ方向の送りに
よりブレード６が切り込んでウエハー切断を行う。本発
明の方法並びに装置は、この実施例に限らず、縦型形式
または外周刃方式のスライシング機にも適用することが
できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the method and apparatus of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment in which the present invention is applied to a horizontal slicing machine in which an inner circumferential blade is attached to a spindle. In the figure, a semiconductor ingot 1 is attached to a spindle 7 and has an inner peripheral blade 6 that rotates at high speed.
By a holding mechanism and a feeding mechanism (not shown), arrow B
, the wafer moves in direction A and is cut into thin wafers. In the figure, in a horizontal slicing machine, a blade 6, which is an inner peripheral cutter, is stretched over a spindle 7 that rotates at a high speed, and is rotated at a high speed. The semiconductor ingot 1 is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) and cut into thin wafers. On the same machine for horizontal slicing, a grindstone shaft 8A is provided close to the outside of the spindle 7 of the blade 6, and a grindstone 8 for grinding the end surface is provided at the tip of the grindstone shaft 8A, and is directed toward the end surface of the semiconductor ingot 1. Immediately before cutting, the movement stroke of the movement mechanism for the semiconductor ingot 1 is increased, and the semiconductor ingot 1 is moved to the position of the grindstone 8 as shown by the dashed line in FIG. The ingot 1 is moved in the directions of arrows D, C, and B and fed into the central opening of the blade 6, and as it is fed in the direction of arrow A, the blade 6 cuts into the wafer to cut the wafer. The method and apparatus of the present invention are not limited to this embodiment, but can also be applied to vertical type or peripheral blade type slicing machines.
【発明の効果】以上詳述したように、本発明を採用する
ことにより、同一機上で、端面研削機構を付加する以外
は、すべてスライシング機の機構を利用して、半導体イ
ンゴットと取付け等の段取り替えを要せず、切断加工サ
イクル中に、半導体インゴットの端面を高精度に研削す
ることが可能となる。従って、半導体インゴット端面の
平面度の測定管理が不要となり、切断されたウエハーの
品質、即ち、片面の平面度を飛躍的に向上させることが
できる。また、後工程の工数、経費等が著しく削減され
、生産性を高めることができる等多大の効果が得られる
。[Effects of the Invention] As detailed above, by adopting the present invention, all the mechanisms of the slicing machine are used on the same machine, except for the addition of an end-face grinding mechanism, to process semiconductor ingots and attach them. It becomes possible to grind the end face of the semiconductor ingot with high precision during the cutting cycle without requiring a setup change. Therefore, it becomes unnecessary to measure and manage the flatness of the end face of the semiconductor ingot, and the quality of the cut wafer, that is, the flatness of one side can be dramatically improved. In addition, the number of man-hours and costs of post-processing can be significantly reduced, productivity can be increased, and other great effects can be obtained.
【図１】図１は本発明の実施例の機構説明図[Fig. 1] Fig. 1 is an explanatory diagram of the mechanism of an embodiment of the present invention.
４…半導体インゴット ６…ブレード ４…端面 ８…端面研削砥石 4...Semiconductor ingot 6...Blade 4...End face 8... End face grinding wheel
Claims (2)
導体材料を薄片状に切断するウエハー製造方法に於いて
、砥石がスピンドルの外側に近接して配置され、この砥
石で半導体材料の端面を研削する研削工程と、切断刃に
よって半導体材料をウエハーに切断する工程と、の両工
程を交互に繰り返し行うことを特徴とするウエハー製造
方法。Claim 1: In a wafer manufacturing method in which a cutting blade is attached to a rotating spindle to cut a semiconductor material into thin pieces, a grindstone is placed close to the outside of the spindle, and the grindstone grinds an end face of the semiconductor material. A method for manufacturing a wafer, comprising alternately repeating the following steps: a grinding step and a step of cutting a semiconductor material into wafers with a cutting blade.
導体材料を薄片状に切断するウエハー製造装置に於いて
、前記スピンドル外側の近傍に回転する砥石軸を取付け
、切断された半導体材料の端面を研削する砥石を前記砥
石軸の先端に取付けたことを特徴とするウエハー製造装
置。2. In a wafer manufacturing apparatus in which a cutting blade is attached to a rotating spindle to cut a semiconductor material into thin pieces, a rotating grindstone shaft is attached near the outside of the spindle, and the end face of the cut semiconductor material is cut into thin pieces. A wafer manufacturing apparatus characterized in that a grinding wheel for grinding is attached to the tip of the grinding wheel shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018086A JP2537573B2 (en) | 1991-02-08 | 1991-02-08 | Semiconductor wafer-manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018086A JP2537573B2 (en) | 1991-02-08 | 1991-02-08 | Semiconductor wafer-manufacturing method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22935684A Division JPS61106207A (en) | 1984-10-31 | 1984-10-31 | Manufacture of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04211908A true JPH04211908A (en) | 1992-08-03 |
| JP2537573B2 JP2537573B2 (en) | 1996-09-25 |
Family
ID=11961839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3018086A Expired - Lifetime JP2537573B2 (en) | 1991-02-08 | 1991-02-08 | Semiconductor wafer-manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2537573B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2382257A (en) | 1943-04-21 | 1945-08-14 | Albert Ramsay | Manufacture of piezoelectric oscillator blanks |
-
1991
- 1991-02-08 JP JP3018086A patent/JP2537573B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2537573B2 (en) | 1996-09-25 |
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