JPH0421596B2 - - Google Patents
Info
- Publication number
- JPH0421596B2 JPH0421596B2 JP59269291A JP26929184A JPH0421596B2 JP H0421596 B2 JPH0421596 B2 JP H0421596B2 JP 59269291 A JP59269291 A JP 59269291A JP 26929184 A JP26929184 A JP 26929184A JP H0421596 B2 JPH0421596 B2 JP H0421596B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited film
- recording medium
- substrate
- sef
- sefx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24326—Halides (F, CI, Br...)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はレーザビームを照射して局部的に加熱
し、その加熱部に穴もしくは凹部又は凸部を形成
することによつて記録する光学記録用媒体に関す
るものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to optical recording, which is performed by irradiating a laser beam to locally heat the area and forming holes, depressions, or projections in the heated area. It is related to the medium for use.
（従来の技術）
基板上に形成された薄膜にレーザビームを照射
して、ピツトを形成するようにした光学的記録用
媒体として、従来よりTeを使用することが知ら
れている。Teは低融点、低熱伝導度を有する為
に、上記方法による記録において高い感度を示
す。しかし、Teは酸化され易く、酸化されると
透明になり記録が出来なくなるという問題があ
る。(Prior Art) It has been known to use Te as an optical recording medium in which pits are formed by irradiating a thin film formed on a substrate with a laser beam. Since Te has a low melting point and low thermal conductivity, it exhibits high sensitivity in recording by the above method. However, Te is easily oxidized, and when it is oxidized, it becomes transparent and recording becomes impossible.
上記問題点を改良したものとして、Teを合金
化したもの、Teの低酸化物、Teを有機膜中に分
散させたもの等がある（たとえば、特開昭53−
31104号公報、特開昭58−54338号公報、特開昭57
−98394号公報）。 As improvements to the above problems, there are alloyed Te, low oxide Te, and dispersion of Te in organic films (for example,
Publication No. 31104, Japanese Patent Application Laid-open No. 58-54338, Japanese Patent Publication No. 57-1983
-98394).
本発明者らは、このようなTeを中心とする系
について、さらに種々検討した結果、経時安定
性、Ｃ／Ｎ比（Corrier−to−Noise ratio）、ピ
ツト形状、コントラストをさらに向上しえた記録
媒体を得、本発明に到達した。 As a result of further various studies on such Te-centered systems, the present inventors have found a record that further improves stability over time, C/N ratio (Corrier-to-Noise ratio), pit shape, and contrast. A medium was obtained and the present invention was achieved.
すなわち、本発明の要旨は、フツ化セレンガス
の存在下、基板上に金属−SeFxプラズマ堆積膜
を形成させてなる光学的記録媒体にある。 That is, the gist of the present invention is an optical recording medium in which a metal-SeFx plasma deposited film is formed on a substrate in the presence of selenium fluoride gas.
（発明の構成）
まず、本発明に係る記録媒体の基板としては、
ガラス、アクリル樹脂、ポリカーボネート樹脂等
のプラスチツク、又はアルミニウム等の金属が挙
げられ、その厚みは一般に１〜1.5mm程度から選
ばれる。(Structure of the Invention) First, the substrate of the recording medium according to the present invention includes:
Examples include glass, plastics such as acrylic resin and polycarbonate resin, and metals such as aluminum, and the thickness thereof is generally selected from about 1 to 1.5 mm.
本発明においては、この基板上に金属−フツ化
セレン（SeFxと略記する場合がある。）プラズマ
堆積膜を形成させる。 In the present invention, a metal selenium fluoride (sometimes abbreviated as SeFx) plasma deposited film is formed on this substrate.
金属としてはTe、Bi、Se等が挙げられるが、
好適に、TeあるいはTeを主体とする金属が挙げ
られる。たとえばTeの場合、原料としてはTe、
又はTeを含む化合物、たとえばPbTe、MoTe2、
TeO2が用いられ、さらにBi、Se等を含む化合物
を他成分として目的に応じ加えることもできる。 Examples of metals include Te, Bi, Se, etc.
Preferably, Te or a metal mainly composed of Te is used. For example, in the case of Te, the raw materials are Te,
or compounds containing Te, such as PbTe, MoTe 2 ,
TeO 2 is used, and compounds containing Bi, Se, etc. can also be added as other components depending on the purpose.
一方、他の原料であるSeFxとしてはＸが１、
４、６のものが挙げられ具体的には、Se2F2、
SeF4、SeF6が挙げられるが、SeF6が一般的であ
る。 On the other hand, for SeFx, which is another raw material, X is 1,
4 and 6, specifically, Se 2 F 2 ,
Examples include SeF 4 and SeF 6 , with SeF 6 being common.
本発明に係る記録用媒体は、たとえば、金属と
してTe、SeFxとてSeF6を用いる場合、SeF6ガ
スを導入した真空容器中でグロー放電を行なうと
ともに、Teを蒸発させて、基板上にTe−SeF6プ
ラズマ堆積膜を形成させることにより得られる。 In the recording medium according to the present invention, for example, when Te and SeFx are used as metals, glow discharge is performed in a vacuum container into which SeF 6 gas is introduced, Te is evaporated, and Te is deposited on the substrate. - Obtained by forming a SeF 6 plasma deposited film.
グロー放電に際しては、高周波法又は直流法の
常法によることができ、ラジカル及びイオン種を
生成させることにより堆積膜が形成される。基板
温度は、室温ないし基板の軟化点未満に保持され
る。Teを含んだSeFxプラズマ堆積膜の厚みは、
通常50A〜1μ程度、好ましくは200〜1000Å程度
である。 Glow discharge can be performed by a conventional method such as a high frequency method or a direct current method, and a deposited film is formed by generating radicals and ionic species. The substrate temperature is maintained at room temperature or below the softening point of the substrate. The thickness of SeFx plasma deposited film containing Te is
It is usually about 50A to 1μ, preferably about 200 to 1000A.
本発明に係る記録媒体においては、プラズマ堆
積膜として、さらに物性向上のため、金属−
SeFx−有機化合物プラズマ堆積膜とすることが
できる。 In the recording medium according to the present invention, as a plasma deposited film, metal-
It can be a SeFx-organic compound plasma deposited film.
すなわち、上記SeFxに加え、さらに有機化合
物をガスとして真空容器内に導入しグロー放電を
行ない、同時にTeを蒸発させることにより、基
板上に金属−SeFx−有機化合物プラズマ堆積膜
を形成させることにより本発明に係る記録媒体を
得ることができる。 That is, in addition to the SeFx described above, an organic compound is introduced as a gas into a vacuum chamber to perform glow discharge, and at the same time evaporates Te, thereby forming a metal-SeFx-organic compound plasma deposited film on the substrate. A recording medium according to the invention can be obtained.
上記第３の原料としての有機化合物としては、
従来、有機放電重合膜を形成させるのに用いられ
ているものが好適に使用される。たとえば、好適
にはベンゼン、スチレン、クロロベンゼン等のベ
ンセンないしベンゼン誘導体。 The organic compound as the third raw material is as follows:
Those conventionally used to form organic discharge polymerized films are preferably used. For example, benzene or benzene derivatives such as benzene, styrene, and chlorobenzene are preferred.
ヘキサメチルジシロキサン等の含ケイ素化合
物、エチレン等のオレフイン化合物、、メタン等
のパラフイン類、ピリジン等のピリジン類、ジメ
チルホルムアミド等のアミド類のＮ含有化合物、
が挙げられる。また、ジメチルテルル、ジエチル
テルル等のアルキル化金属等も使用しうる。 N-containing compounds such as silicon-containing compounds such as hexamethyldisiloxane, olefin compounds such as ethylene, paraffins such as methane, pyridines such as pyridine, amides such as dimethylformamide,
can be mentioned. Furthermore, alkylated metals such as dimethyltellurium and diethyltellurium may also be used.
その他一般溶剤として使用されている。カーボ
ネート類、エーテル類、エステル類、尿素類等を
あげることもできる。 It is also used as a general solvent. Carbonates, ethers, esters, ureas, etc. can also be mentioned.
以下、図面を参照して本発明をさらに詳細に説
明する。 Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第１図は本発明に係る光学記録媒体の製造のた
めの装置の一例であり（Teの場合）、図中１は反
応容器、２はSeFx（及び有機化合物）ガラス導入
口、３は基板、４は高周波コイル、５はTe蒸着
用抵抗加熱器、６は膜厚モニター、７はシヤツタ
ー、８は排気口である。ジアルキルプラズマ堆積
膜の作製は、反応容器１を10-6Torr台まで排気
した後、SeFx（及び有機化合物）ガスを導入口２
より導入し、反応容器１の内圧を５×10-5〜５×
10-3Torrとなるようにする。 FIG. 1 shows an example of an apparatus for producing an optical recording medium according to the present invention (in the case of Te), in which 1 is a reaction vessel, 2 is a SeFx (and organic compound) glass inlet, 3 is a substrate, 4 is a high frequency coil, 5 is a resistance heater for Te deposition, 6 is a film thickness monitor, 7 is a shutter, and 8 is an exhaust port. To prepare a dialkyl plasma deposited film, after evacuating the reaction vessel 1 to a level of 10 -6 Torr, SeFx (and organic compound) gas is introduced into the inlet 2.
5×10 -5 to 5×
10 -3 Torr.
ガス導入後、高周波コイル４に高周波を印加し
放電を起こさせる。これと同時に蒸着用抵抗加熱
器５からTeを蒸発させ、基板３上にTe−SeFx
（−有機化合物）プラズマ堆積膜を形成する。Te
の蒸発量は膜厚モニター６で監視する。 After the gas is introduced, a high frequency is applied to the high frequency coil 4 to cause discharge. At the same time, Te is evaporated from the resistance heater 5 for vapor deposition, and Te-SeFx is deposited on the substrate 3.
(-Organic compound) Forms a plasma deposited film. Te
The amount of evaporation is monitored with a film thickness monitor 6.
Teの含有量はTeの蒸着速度、あるいは堆積条
件等、すなわち、堆積膜の成膜速度を変えること
により制御できる。得られた膜が半導体レーザの
波長で十分な吸収を示すように、Te含有量は50
〜95vol％以上であるのが好ましい。 The Te content can be controlled by changing the Te vapor deposition rate or deposition conditions, that is, the deposition rate of the deposited film. The Te content was 50 to ensure that the resulting film showed sufficient absorption at the wavelength of the semiconductor laser.
It is preferably 95 vol% or more.
SeFx堆積膜としては通常１〜50vol％の範囲か
ら選ばれる。有機化合物としては０〜49vol％の
範囲から選ばれる。 The SeFx deposited film is usually selected from a range of 1 to 50 vol%. The organic compound is selected from a range of 0 to 49 vol%.
本発明に係る記録用媒体は上記のように基板上
に、上記プラズマ堆積膜を形成させてなるが、さ
らに基板と堆積膜の間に記録感度の向上、基板表
面の改質、孔形状の向上等のために下引層を設け
ることもでき、さらには、記録媒体の保護のため
に堆積膜上に保護膜を設けることもできる。 The recording medium according to the present invention is formed by forming the plasma deposited film on the substrate as described above, and further improves the recording sensitivity, modifies the substrate surface, and improves the pore shape between the substrate and the deposited film. An undercoat layer may be provided for such purposes, and furthermore, a protective film may be provided on the deposited film to protect the recording medium.
下引層としては、特に限定されないが、前記
SeFx、有機化合物膜等を用いれば良い。また保
護膜としては各種金属酸化物、金属弗化物等が挙
げられ、例えばSiO2、MgF2等が例示される。 The undercoat layer is not particularly limited, but the above-mentioned
SeFx, an organic compound film, etc. may be used. Further, the protective film may include various metal oxides, metal fluorides, etc., such as SiO 2 and MgF 2 .
本発明に係る光学的記録用媒体は、光デイスク
記録媒体として有用であり、レーザビームを照射
して加熱することにより、穴をあけ、もしくは凹
又は凸部を形成させて、記録を行なうことができ
る。 The optical recording medium according to the present invention is useful as an optical disk recording medium, and recording can be performed by making holes or forming concave or convex portions by irradiating and heating a laser beam. can.
（実施例）
以下、実施例により本発明を更に詳しく説明す
るが、本発明が実施例のみに限定されるものでな
いことは勿論のことである。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples, but it goes without saying that the present invention is not limited only to the Examples.
実施例 １
真空容器を２×10-5Torrまで排気した後、六
フツ化セレン（SeF6）ガスを導入し、コイル状
の電極に13.56MHzの高周波電圧を印加してグロ
ー放電を行なう。Example 1 After the vacuum container was evacuated to 2×10 −5 Torr, selenium hexafluoride (SeF 6 ) gas was introduced, and a high frequency voltage of 13.56 MHz was applied to the coiled electrode to cause glow discharge.
SeF6ガス流量10sccm、ガス圧５×10-4Torr、
放電電力200Wでグロー放電をおこすと同時に、
Teを抵抗加熱で蒸発させ、基板上にTe−SeF6プ
ラズマ堆積膜を形成させる。堆積速度を110Å／
mmとし、250ÅのTe−SeF6プラズマ堆積膜を成膜
し、（Arイオンレーザによる記録、He−Neレー
ザによる再生で）Ｃ／N50dBが得られた。 SeF 6 gas flow rate 10sccm, gas pressure 5×10 -4 Torr,
At the same time as generating a glow discharge with a discharge power of 200W,
Te is evaporated by resistance heating to form a Te-SeF 6 plasma deposited film on the substrate. Deposition rate 110Å/
mm, a 250 Å Te-SeF 6 plasma deposited film was formed, and a C/N of 50 dB was obtained (by recording with an Ar ion laser and reproducing with a He-Ne laser).
実施例 ２
SeF6ガス流量10sccm、ガス圧５×10-5Torr、
放電電力100W、堆積速度110Å／mmで260ÅのTe
−SeF6プラズマ堆積膜を成膜した。この膜では
Ｃ／N49dBが得られた。Example 2 SeF 6 gas flow rate 10sccm, gas pressure 5×10 -5 Torr,
260Å Te at discharge power 100W and deposition rate 110Å/mm
-SeF 6 plasma deposited film was deposited. With this film, a C/N of 49 dB was obtained.
また、経時安定性に優れ、60℃、80％RH中に
７日間保存後も膜面の反射率低下はみられなかつ
た。 In addition, it has excellent stability over time, and no decrease in reflectance of the film surface was observed even after storage at 60°C and 80% RH for 7 days.
実施例 ３
SeF6ガス流量2sccm、DMF（ジメチルホルムア
ミド）2.5sccmでSeF6・DMF混合ガスを導入し、
ガス圧５×10-4Torr、放電電力200W、堆積速度
100Å／mmで200ÅのTe−SeF6−DMFプラズマ堆
積膜を成膜した。この膜ではＣ／N49dBが得ら
れた。Example 3 SeF 6 /DMF mixed gas was introduced at a SeF 6 gas flow rate of 2 sccm and DMF (dimethylformamide) 2.5 sccm,
Gas pressure 5×10 -4 Torr, discharge power 200W, deposition rate
A 200 Å Te-SeF 6 -DMF plasma deposited film was formed at 100 Å/mm. With this film, a C/N of 49 dB was obtained.
（発明の効果）
本発明に係る記録媒体は、Ｃ／Ｎ比、ピツト形
状、コントラスト、経時安定性にすぐれる。(Effects of the Invention) The recording medium according to the present invention has excellent C/N ratio, pit shape, contrast, and stability over time.
第１図は、本発明に係る光学記録媒体の製造の
ための装置の一例を示す。
FIG. 1 shows an example of an apparatus for manufacturing an optical recording medium according to the present invention.
Claims (1)
フツ化セレンプレズマ堆積膜を形成させてなる光
学的記録媒体。 ２ フツ化セレンガス及び有機化合物ガスの存在
下、基板上に金属−フツ化セレン−有機化合物プ
ラズマ堆積膜を形成させてなる特許請求の範囲第
１項に記載の光学的記録媒体。[Claims] 1. In the presence of selenium fluoride gas, metal -
An optical recording medium formed by forming a selenium fluoride presma deposited film. 2. The optical recording medium according to claim 1, wherein a metal-selenium fluoride-organic compound plasma deposited film is formed on a substrate in the presence of selenium fluoride gas and organic compound gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269291A JPS61146594A (en) | 1984-12-20 | 1984-12-20 | Optical-recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59269291A JPS61146594A (en) | 1984-12-20 | 1984-12-20 | Optical-recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61146594A JPS61146594A (en) | 1986-07-04 |
| JPH0421596B2 true JPH0421596B2 (en) | 1992-04-10 |
Family
ID=17470299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59269291A Granted JPS61146594A (en) | 1984-12-20 | 1984-12-20 | Optical-recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61146594A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104996A (en) * | 1982-12-08 | 1984-06-18 | Canon Inc | Optical recording medium |
| JPS59198543A (en) * | 1983-04-27 | 1984-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording and manufacture thereof |
-
1984
- 1984-12-20 JP JP59269291A patent/JPS61146594A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61146594A (en) | 1986-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |