JPH0723023B2 - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0723023B2 JPH0723023B2 JP59230981A JP23098184A JPH0723023B2 JP H0723023 B2 JPH0723023 B2 JP H0723023B2 JP 59230981 A JP59230981 A JP 59230981A JP 23098184 A JP23098184 A JP 23098184A JP H0723023 B2 JPH0723023 B2 JP H0723023B2
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- film
- substrate
- deposited film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 16
- 150000002894 organic compounds Chemical class 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 32
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 21
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- -1 aluminum Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24324—Sulfur
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24326—Halides (F, CI, Br...)
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はレーザビームを照射して局部的に加熱し、その
加熱部に穴もしくは凹部又は凸部を形成することによっ
て記録する光学記録用媒体に関するものである。The present invention relates to an optical recording medium for recording by irradiating a laser beam to locally heat it and forming a hole or a concave portion or a convex portion in the heating portion. It is about.
（従来の技術） 基板上に形成された薄膜にレーザビームを照射して、ピ
ットを形成するようにした光学的記録用媒体として、従
来よりTeを使用することが知られている。Teは低融点、
低熱伝導度を有する為に、上記方法による記録において
高い感度を示す。しかし、Teは酸化され易く、酸化され
ると透明になり記録が出来なくなるという問題がある。(Prior Art) It has been conventionally known to use Te as an optical recording medium in which a thin film formed on a substrate is irradiated with a laser beam to form pits. Te has a low melting point,
Since it has a low thermal conductivity, it exhibits high sensitivity in recording by the above method. However, there is a problem that Te is easily oxidized, and when it is oxidized, it becomes transparent and recording cannot be performed.
上記問題点を改良したものとして、Teを合金化したも
の、Teの低酸化物、Teを有機膜中に分散させたもの等が
ある（たとえば、特開昭53-31104号公報、特開昭58-543
38号公報、特開昭57-98394号公報）。As a solution to the above problems, there are alloyed Te, a low oxide of Te, and a dispersion of Te in an organic film (for example, JP-A-53-31104, JP-A-53-31104). 58-543
38, JP-A-57-98394).
（発明の目的） 本発明者らは、このようなTeを中心とする系について、
さらに種々検討した結果、経時安定性、C/N比（Carrier
−to−Noiseratio）、ピット形状、コントラストをさら
に向上しえた記録媒体を得、本発明に到達した。(Purpose of the Invention) The present inventors have proposed a system centered on Te as described above.
As a result of further studies, stability over time, C / N ratio (Carrier
-To-Noiseratio), a pit shape, and a recording medium having further improved contrast were obtained, and the present invention was reached.
すなわち、本発明の要旨は、SF6ガスの存在下、Teを蒸
発させることにより、基板上に、Teが50〜95容量％の割
合のTe-SF6プラズマ堆積膜を形成させてなる光学的記録
媒体にある。That is, the gist of the present invention is an optical method in which Te is evaporated in the presence of SF 6 gas to form a Te-SF 6 plasma deposited film having a Te content of 50 to 95% by volume on the substrate. It is on the recording medium.
（発明の構成） まず、本発明に係る記録媒体の基板としては、ガラス、
アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、又はアルミニウム等の金属が挙げられ、その厚みは
一般に１〜1.5mm程度から選ばれる。(Structure of the Invention) First, as the substrate of the recording medium according to the present invention, glass,
Examples thereof include plastics such as acrylic resin and polycarbonate resin, and metals such as aluminum, and the thickness thereof is generally selected from about 1 to 1.5 mm.
本発明においては、この基板上にTe-SF6プラズマ堆積膜
を形成させる。TeとしてはTe単体もしくはTeを含む化合
物、たとえばPbTe、MoTe2、TeO2等でも良い。In the present invention, a Te-SF 6 plasma deposited film is formed on this substrate. Te may be Te alone or a compound containing Te, for example, PbTe, MoTe 2 , TeO 2 or the like.
一方、他の原料であるフッ化硫黄ガスとしてはSF6が用
いられる。On the other hand, SF 6 is used as sulfur fluoride gas which is another raw material.
本発明に係る記録用媒体は、SF6ガスを導入した真空容
器中でグロー放電を行なうとともに、Teを蒸発させて、
基板上にTe-SF6プラズマ堆積膜を形成させることにより
得られる。The recording medium according to the present invention performs glow discharge in a vacuum container into which SF 6 gas is introduced and evaporates Te,
It is obtained by forming a Te-SF 6 plasma deposited film on the substrate.
グロー放電に際しては、高周波法又は直流法の常法によ
ることができ、ラジカル及びイオン種を生成させること
により堆積膜が形成される。基板温度は、室温ないし基
板の軟化点未満に保持される。Teを含んだSF6プラズマ
堆積膜の厚みは、通常50Å〜１μ程度、好ましくは200
〜1,000Å程度である。The glow discharge can be performed by a conventional method such as a high frequency method or a direct current method, and a deposited film is formed by generating radicals and ionic species. The substrate temperature is kept at room temperature or below the softening point of the substrate. The thickness of the SF 6 plasma deposited film containing Te is usually about 50Å to 1μ, preferably 200.
It is about 1,000Å.
本発明に係る記録媒体においては、プラズマ堆積膜とし
て、さらに物性向上のため、Te-SF6-有機化合物プラズ
マ堆積膜とすることができる。In the recording medium according to the present invention, the plasma deposited film may be a Te-SF 6 -organic compound plasma deposited film for further improving the physical properties.
すなわち、上記SF6に加え、さらに有機化合物をガスと
して真空容器内に導入しグロー放電を行ない、同時にTe
を蒸発させることにより、基板上にTe-SF6-有機化合物
プラズマ堆積膜を形成させることにより本発明に係る記
録媒体を得ることができる。That is, in addition to SF 6 described above, an organic compound is introduced as a gas into the vacuum container to perform glow discharge, and at the same time Te
The recording medium according to the present invention can be obtained by forming a Te-SF 6 -organic compound plasma deposited film on the substrate by evaporating the.
上記第３の原料としての有機化合物としては、従来、有
機放電重合膜を形成させるのに用いられているものが好
適に使用される。As the organic compound as the third raw material, those conventionally used for forming an organic discharge polymerization film are preferably used.
たとえば、好適にはベンゼン、スチレン、クロロベンゼ
ン等のベンゼンないしベンゼン誘導体、ヘキサメチルジ
シロキサン等の含ケイ素化合物、エチレン等のオレフィ
ン化合物、メタン等のパラフィン類、ピリジン等のピリ
ジン類、ジメチルホルムアミド等のアミド類のＮ含有化
合物が挙げられる。また、ジメチルテルル、ジエチルテ
ルル等のアルキル化金属等も使用しうる。For example, preferably, benzene or benzene derivatives such as benzene, styrene and chlorobenzene, silicon-containing compounds such as hexamethyldisiloxane, olefin compounds such as ethylene, paraffins such as methane, pyridines such as pyridine, amides such as dimethylformamide. N-containing compounds of the class are mentioned. Further, an alkylated metal such as dimethyl tellurium or diethyl tellurium may be used.
その他一般溶剤として使用されているカーボネート類、
エーテル類、エステル類、尿素類等を挙げることもでき
る。Other carbonates used as general solvents,
There may also be mentioned ethers, esters, ureas and the like.
以下、図面を参照して本発明をさらに詳細に説明する。
第１図は本発明に係る光学記録用媒体の製造のための装
置の一例であり、図中（１）は反応容器、（２）はSF6
（及び有機化合物）ガス導入口、（３）は基板、（４）
は高周波コイル、（５）はTe蒸着用抵抗加熱器、（６）
は膜厚モニター、（７）はシャッター、（８）は排気口
である。プラズマ堆積膜の作製は、反応容器（１）を10
-6Torr台まで排気した後、SF6（及び有機化合物）ガス
を導入口（２）より導入し、反応容器（１）の内圧を５
×10-5〜５×10-3Torrとなるようにする。ガス導入後、
高周波コイル（４）に高周波を印加し放電を起こさせ
る。これと同時に蒸着用抵抗加熱器（５）からTeを蒸発
させ、基板（３）上にTe-SF6（−有機化合物）プラズマ
堆積膜が得られる。Teの蒸発量は膜厚モニター（６）で
監視する。Hereinafter, the present invention will be described in more detail with reference to the drawings.
FIG. 1 is an example of an apparatus for producing an optical recording medium according to the present invention, in which (1) is a reaction vessel and (2) is SF 6
(And organic compound) gas inlet, (3) substrate, (4)
Is a high frequency coil, (5) is a resistance heater for vapor deposition of Te, (6)
Is a film thickness monitor, (7) is a shutter, and (8) is an exhaust port. For the production of the plasma deposited film, the reaction vessel (1)
After exhausting to -6 Torr level, SF 6 (and organic compound) gas was introduced through the inlet (2), and the internal pressure of the reaction vessel (1) was adjusted to 5
It should be in the range of × 10 -5 to 5 × 10 -3 Torr. After introducing the gas,
A high frequency is applied to the high frequency coil (4) to cause discharge. At the evaporated Te simultaneously deposited resistor heater (5), Te-SF 6 on a substrate (3) (- Organic Compound) plasma deposition film can be obtained. The evaporation amount of Te is monitored by the film thickness monitor (6).
Teの含有量はTeの蒸着速度、あるいはSF6（−有機化合
物）の堆積条件を変えること、すなわち、堆積膜の成膜
速度の二者のうちいずれかを変えることにより制御でき
る。得られた膜が半導体レーザの波長で十分な吸収を示
すように、Te含有量は50〜95容量％とする。The Te content can be controlled by changing the vapor deposition rate of Te or the deposition condition of SF 6 (-organic compound), that is, by changing either of the film forming rate of the deposited film. The Te content is 50 to 95% by volume so that the obtained film exhibits sufficient absorption at the wavelength of the semiconductor laser.
TeとSF6との二成分系の場合には残部すなわち５〜50容
量％がSF6となり、Te、SF6及び有機化合物の三成分系の
場合には残部すなわち５〜50容量％がSF6と有機化合物
からなるのが良い。この三成分系の場合には有機化合物
がSF6より多く含まれているのが好ましい。In the case of a binary system of Te and SF 6 , the balance, that is, 5 to 50% by volume becomes SF 6 , and in the case of a ternary system of Te, SF 6 and an organic compound, the balance, that is, 5 to 50% by volume of SF 6 And organic compounds are good. In the case of this three-component system, it is preferable that the organic compound is contained in a larger amount than SF 6 .
本発明に係る記録用媒体は上記のように基板上に、上記
プラズマ堆積膜を形成させてなるが、さらに基板と堆積
膜の間に記録感度の向上、基板表面の改質、孔形状の向
上等のために下引層を設けることもでき、さらには、記
録媒体の保護のために堆積膜上に保護膜を設けることも
できる。The recording medium according to the present invention is formed by forming the above plasma deposited film on the substrate as described above. Further, the recording sensitivity is improved, the substrate surface is modified, and the hole shape is improved between the substrate and the deposited film. An undercoat layer may be provided for the above purposes, and a protective film may be provided on the deposited film for protecting the recording medium.
本発明に係る光学的記録用媒体は、光ディスク記録媒体
として有用であり、レーザビームを照射して加熱するこ
とにより、穴をあけ、もしくは凹又は凸部を形成させ
て、記録を行なうことができる。INDUSTRIAL APPLICABILITY The optical recording medium according to the present invention is useful as an optical disc recording medium, and by irradiating with a laser beam and heating, a hole can be formed, or a concave or convex portion can be formed to perform recording. .
（実施例） 以下、実施例により本発明を更に詳しく説明するが、本
発明が実施例のみに限定されるものでないことは勿論の
ことである。(Examples) Hereinafter, the present invention will be described in more detail with reference to Examples, but it goes without saying that the present invention is not limited to the Examples.
実施例１ 真空容器を２×10-5Torrまで排気した後、六フッ化硫黄
（SF6）とジメチルホルムアミド（DMF）の混合ガスを導
入し、コイル状の電極（180mmφ、３ターン、ピッチ15m
m）に13.56MHzの高周波電圧を印加してグロー放電を行
なう。Example 1 After evacuating a vacuum container to 2 × 10 −5 Torr, a mixed gas of sulfur hexafluoride (SF 6 ) and dimethylformamide (DMF) was introduced, and a coiled electrode (180 mmφ, 3 turns, pitch 15 m).
A high-frequency voltage of 13.56MHz is applied to m) to perform glow discharge.
SF6ガス流量6sccm、DMFガス流量3sccm、ガス圧５×10-3
Torr、放電電力100Wでグロー放電をおこすと同時にTeを
抵抗加熱で蒸発させ、Te-SF6-DMFプラズマ堆積膜を形成
させる。堆積速度を300Å/minとし、300ÅのTe-SF6-DMF
プラズマ堆積膜を成膜し、波長830nm、媒体上4mWの半導
体レーザで記録すると、150nsecで記録を行なうことが
できた。SF 6 gas flow 6sccm, DMF gas flow 3sccm, gas pressure 5 × 10 -3
A glow discharge is generated at a discharge power of 100 W with Torr, and at the same time Te is evaporated by resistance heating to form a Te-SF 6 -DMF plasma deposited film. With a deposition rate of 300Å / min, 300Å of Te-SF 6 -DMF
When a plasma deposited film was formed and recorded with a semiconductor laser of 830 nm in wavelength and 4 mW on the medium, recording could be performed in 150 nsec.
また、この膜は耐酸化性に優れ、60℃、80％RH中に10日
間保存しても膜の光学的反射率の低下はみられなかっ
た。Moreover, this film was excellent in oxidation resistance, and no decrease in optical reflectance of the film was observed even after storage at 60 ° C. and 80% RH for 10 days.
実施例２ SF6ガス2sccm、DMFガス流量4sccmとし、他の堆積条件は
実施例１と同様にし、400ÅのTe-SF6-DMFプラズマ堆積
膜を成膜した。この膜は100nsecで記録可能で、かつ耐
酸化性に優れ、60℃、80％RH中に20日間保存しても膜の
光学的反射率は初期値の３％しか低下しない。Example 2 SF 6 gas was 2 sccm, DMF gas flow rate was 4 sccm, and other deposition conditions were the same as in Example 1 to form a 400 Å Te-SF 6 -DMF plasma deposited film. This film can be recorded in 100 nsec and has excellent oxidation resistance, and even if it is stored in 60 ° C. and 80% RH for 20 days, the optical reflectance of the film is lowered by only 3% of the initial value.
実施例３ SF6ガス2sccm、DMFガス流量2.5sccm、ガス圧５×10-4To
rr、放電電力200W、堆積速度150Å/minで300Å成膜し
た。Example 3 SF 6 gas 2 sccm, DMF gas flow rate 2.5 sccm, gas pressure 5 × 10 −4 To
rr, discharge power of 200 W, and deposition rate of 150 Å / min.
この膜は（200nsecで記録可能で）C/N58dBが得られた。This film has a C / N of 58 dB (recordable at 200 nsec).
実施例４ SF6ガス流量9sccm、ガス圧５×10-3Torr、放電電力200
W、堆積速度400Å/minで300ÅのTe-SF6プラズマ堆積膜
を成膜した。Example 4 SF 6 gas flow rate 9 sccm, gas pressure 5 × 10 −3 Torr, discharge power 200
A Te-SF 6 plasma deposited film with W and a deposition rate of 400Å / min and 300Å was formed.
この膜は60℃、80％RH中に10日間保存して膜の光学的反
射率の低下は初期値の20％であった。This film was stored at 60 ° C. and 80% RH for 10 days, and the decrease in the optical reflectance of the film was 20% of the initial value.
（発明の効果） 本発明に係る記録用媒体はC/N比、ピット形状、コント
ラスト、経時安定性にすぐれる。(Effect of the Invention) The recording medium according to the present invention is excellent in C / N ratio, pit shape, contrast, and temporal stability.
第１図は、本発明に係る記録用媒体の製造のための装置
の一例を示す。 図中（１）は反応容器、（２）はガス導入口、（３）は
基板、（４）は高周波コイル、（５）はTe蒸着用抵抗加
熱器をそれぞれ示す。FIG. 1 shows an example of an apparatus for manufacturing a recording medium according to the present invention. In the figure, (1) shows a reaction vessel, (2) shows a gas inlet, (3) shows a substrate, (4) shows a high-frequency coil, and (5) shows a resistance heater for Te vapor deposition.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀江 通和 神奈川県横浜市緑区鴨志田町1000番地 三 菱化成工業株式会社総合研究所内 (72)発明者 田村 孝憲 神奈川県横浜市緑区鴨志田町1000番地 三 菱化成工業株式会社総合研究所内 (56)参考文献 特開 昭59−104996（ＪＰ，Ａ) 特開 昭59−113535（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tohwa Horie 1000 Kamoshida-cho, Midori-ku, Yokohama-shi, Kanagawa Sanryo Kasei Co., Ltd., Research Institute (72) Inventor Takanori Tamura 1000, Kamoshida-cho, Midori-ku, Yokohama-shi, Kanagawa Address Sanryo Kasei Kogyo Co., Ltd. (56) Reference JP-A-59-104996 (JP, A) JP-A-59-113535 (JP, A)
Claims (2)
より、基板上に、Teが50〜95容量％の割合のTe-SF6プラ
ズマ堆積膜を形成させてなる光学的記録媒体。1. An optical recording medium comprising a Te-SF 6 plasma deposited film having a Te content of 50 to 95% by volume formed on a substrate by evaporating Te in the presence of SF 6 gas.
上に、Teが50〜95容量％の割合のTe-SF6-有機化合物プ
ラズマ堆積膜を形成させてなる特許請求の範囲第１項記
載の光学的記録媒体。2. A Te-SF 6 -organic compound plasma deposited film having a Te content of 50 to 95% by volume is formed on a substrate by introducing an organic compound gas. Optical recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230981A JPH0723023B2 (en) | 1984-11-01 | 1984-11-01 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230981A JPH0723023B2 (en) | 1984-11-01 | 1984-11-01 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61110348A JPS61110348A (en) | 1986-05-28 |
| JPH0723023B2 true JPH0723023B2 (en) | 1995-03-15 |
Family
ID=16916353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59230981A Expired - Lifetime JPH0723023B2 (en) | 1984-11-01 | 1984-11-01 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0723023B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589232A (en) * | 1981-07-10 | 1983-01-19 | Toshiba Corp | Optical information recording medium |
| JPS5957790A (en) * | 1982-09-29 | 1984-04-03 | Toshiba Corp | Production of energy information recording film body |
| JPS59104996A (en) * | 1982-12-08 | 1984-06-18 | Canon Inc | Optical recording medium |
| JPS59113535A (en) * | 1982-12-21 | 1984-06-30 | Canon Inc | Optical recording medium |
| NL8300422A (en) * | 1983-02-04 | 1984-09-03 | Philips Nv | METHOD OF MANUFACTURING AN OPTICALLY READABLE INFORMATION DISC. |
-
1984
- 1984-11-01 JP JP59230981A patent/JPH0723023B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61110348A (en) | 1986-05-28 |
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