JPH0424254U - - Google Patents
Info
- Publication number
- JPH0424254U JPH0424254U JP6461390U JP6461390U JPH0424254U JP H0424254 U JPH0424254 U JP H0424254U JP 6461390 U JP6461390 U JP 6461390U JP 6461390 U JP6461390 U JP 6461390U JP H0424254 U JPH0424254 U JP H0424254U
- Authority
- JP
- Japan
- Prior art keywords
- holder
- filament
- control circuit
- ion implantation
- secondary electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006386 neutralization reaction Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図は、この考案の一実施例に係るイオン注
入装置の中性化制御回路の回路図である。第２図
は、中性化手段を備えるイオン注入装置の一例を
部分的に示す図である。第３図は、第２図中の中
性化制御回路の従来の回路図である。
２……イオンビーム、５……基板、６……ホル
ダ、８……フイラメント、１２……二次電子、１
４……フイラメント電源、２４ａ……中性化制御
回路、３６……演算回路、３６６，３６７……抵
抗、３６８，３６９……ダイオード。
FIG. 1 is a circuit diagram of a neutralization control circuit of an ion implanter according to an embodiment of this invention. FIG. 2 is a diagram partially showing an example of an ion implantation apparatus including a neutralization means. FIG. 3 is a conventional circuit diagram of the neutralization control circuit shown in FIG. 2. 2... Ion beam, 5... Substrate, 6... Holder, 8... Filament, 12... Secondary electron, 1
4...Filament power supply, 24a...Neutralization control circuit, 36...Arithmetic circuit, 366, 367...Resistor, 368, 369...Diode.
Claims (1)
デー系の構造物に当ててそこから二次電子を放出
させ、この二次電子をホルダ上のイオン注入され
るべき基板に供給するようにしたイオン注入装置
であつて、前記ホルダに流れるホルダ電流が所望
の一定値になるようにフイラメント電流を制御す
る中性化制御回路を備えるものにおいて、前記中
性化制御回路内のフイラメント電流制御の時定数
を決める回路を、互いに直列接続された抵抗とダ
イオードをそれぞれ含む２系統の回路であつて両
ダイオードの向きが互いに逆であるものを用いて
構成したことを特徴とするイオン注入装置。 An ion implantation device in which primary electrons emitted from a filament are applied to a Faraday-based structure to emit secondary electrons therefrom, and these secondary electrons are supplied to a substrate on a holder into which ions are to be implanted. and a neutralization control circuit for controlling the filament current so that the holder current flowing through the holder becomes a desired constant value, a circuit for determining a time constant for filament current control in the neutralization control circuit. An ion implantation apparatus characterized in that it is constructed using two circuits each including a resistor and a diode connected in series, the diodes having opposite directions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6461390U JPH0424254U (en) | 1990-06-19 | 1990-06-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6461390U JPH0424254U (en) | 1990-06-19 | 1990-06-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0424254U true JPH0424254U (en) | 1992-02-27 |
Family
ID=31595712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6461390U Pending JPH0424254U (en) | 1990-06-19 | 1990-06-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0424254U (en) |
-
1990
- 1990-06-19 JP JP6461390U patent/JPH0424254U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0424254U (en) | ||
| JPH0424255U (en) | ||
| JP2000182550A5 (en) | ||
| JPH0424253U (en) | ||
| JPS63109438U (en) | ||
| JPS63179644U (en) | ||
| ES2097109T3 (en) | CONTROL PROCEDURE OF THE CONDUCTING STATE OF A MOS TRANSISTOR. | |
| JPH02131258U (en) | ||
| JPS62272529A (en) | Electron beam exposing device | |
| JPH02146751U (en) | ||
| JPH02113257U (en) | ||
| JPH0214358U (en) | ||
| JPS62186357U (en) | ||
| JPH01120745A (en) | Power unit for thermoelectric field emission type cathode | |
| JPH0545013Y2 (en) | ||
| JPS61100872U (en) | ||
| JPS586142Y2 (en) | Wehnelt power supply for electron guns | |
| JP2702987B2 (en) | Ion beam processing equipment | |
| JPH0396880U (en) | ||
| JPH03104948U (en) | ||
| JPS62127654U (en) | ||
| JPH034648U (en) | ||
| JPS62186356U (en) | ||
| JPS62186353U (en) | ||
| JPS62137550U (en) |