JPH0426534U - - Google Patents
Info
- Publication number
- JPH0426534U JPH0426534U JP6787690U JP6787690U JPH0426534U JP H0426534 U JPH0426534 U JP H0426534U JP 6787690 U JP6787690 U JP 6787690U JP 6787690 U JP6787690 U JP 6787690U JP H0426534 U JPH0426534 U JP H0426534U
- Authority
- JP
- Japan
- Prior art keywords
- argon
- argon ion
- wafer surface
- wiring film
- aluminum wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 9
- 229910052786 argon Inorganic materials 0.000 claims 7
- -1 argon ion Chemical class 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の一実施例の説明図である。
１……イオン源、２……電源、３……引出し電
源、４……加速部電源、５……真空ポンプ、６…
…真空ポンプ、７……ウエハホルダ、８……ホル
ダ電源、９……ウエハ。
FIG. 1 is an explanatory diagram of an embodiment of the present invention. 1...Ion source, 2...Power supply, 3...Extraction power supply, 4...Acceleration unit power supply, 5...Vacuum pump, 6...
...Vacuum pump, 7...Wafer holder, 8...Holder power supply, 9...Wafer.
Claims (1)
ロツクを除去するイオン注入装置において、 アルゴンイオン源と、該アルゴンイオン源から
発生されたアルゴンイオンを加速すると共にアル
ゴンイオンビームを発散させてウエハ面に投射す
るアルゴンイオン投射部とからなることを特徴と
するアルミニウム配線膜のヒロツク除去専用イオ
ン注入装置。[Claim for Utility Model Registration] An ion implantation device for removing hills from an aluminum wiring film deposited on a wafer surface includes an argon ion source and an argon ion beam that accelerates argon ions generated from the argon ion source and emits an argon ion beam. An ion implantation apparatus dedicated to removing blocks from an aluminum wiring film, characterized by comprising an argon ion projection section that diffuses and projects argon ions onto a wafer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6787690U JPH0426534U (en) | 1990-06-28 | 1990-06-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6787690U JPH0426534U (en) | 1990-06-28 | 1990-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0426534U true JPH0426534U (en) | 1992-03-03 |
Family
ID=31601843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6787690U Pending JPH0426534U (en) | 1990-06-28 | 1990-06-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0426534U (en) |
-
1990
- 1990-06-28 JP JP6787690U patent/JPH0426534U/ja active Pending
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