JPH043009B2 - - Google Patents
Info
- Publication number
- JPH043009B2 JPH043009B2 JP31522387A JP31522387A JPH043009B2 JP H043009 B2 JPH043009 B2 JP H043009B2 JP 31522387 A JP31522387 A JP 31522387A JP 31522387 A JP31522387 A JP 31522387A JP H043009 B2 JPH043009 B2 JP H043009B2
- Authority
- JP
- Japan
- Prior art keywords
- continuous magnetic
- continuous
- layer
- thin film
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 18
- -1 fluorine ions Chemical class 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
〔産業上の利用分野〕
本発明は、フロツピーデイスク、ビデオ、オー
デイオの録音テープ等記録用媒体として幅広く使
用されている連続磁性媒体の製造方法に関する。
〔従来の技術〕
近年、磁気記録の高密度の要求に伴い磁性層が
磁性材料のみによつて形成される連続磁性媒体の
研究が盛んに行われている。連続磁性媒体は、真
空蒸着法、スパツタ法もしくはメツキ法によつて
製造されている。この連続磁性媒体は、磁性層が
連続薄膜であるため、長手方向の記録は勿論、垂
直記録方式において特に記録密度と飛躍的向上が
期待されている。また各磁気テープ又はデイスク
状磁気記録媒体等、種々の製品形態への応用開発
が進められている。
殊に、長尺状の連続薄膜磁性媒体の磁性層は、
スパツタ装置内において、次のように形成され
る。耐熱基材を、対称的な位置に設けられている
１対の位置決め用リング、サブストホルダ間を通
して、複数のガイドロールによりＳ字形に搬送す
る。この基材は、上記リングとサブストホルダの
隙間を通過の際に、リング側に設けられたターゲ
ツトからリングの孔を通り抜けて、基材表面に磁
性材料を析出させることにより、両面に連続的な
磁性層が形成されている。
〔発明が解決しようとする問題点〕
しかしながら、上記した連続磁性媒体は、塗布
型の磁性媒体と異なり、磁性層中に結合材、潤滑
剤等を全く含有しないので可撓性、潤滑性に乏し
く耐久性に問題を有している。このため、第３図
のような連続磁性媒体面４２上に、フツ素系潤滑
剤４３、シリコーンオイル、高級脂肪酸及びその
誘導体等を単独もしくは複合させた形で、塗布す
ることにより皮膜４３を形成したり、あるいは第
４図のように非晶質の炭素もしくは、SiOx（ｘは
１〜２の数）で表わされる化合物等の連続保護層
５３を連続磁性層５２表面上に形成する試みが行
われているが、いずれも十分な耐久性を得るには
至つていない。
本発明は、上記欠点に鑑みてなされており、耐
熱基材上の連続磁性層の表面に弗化炭素薄膜から
なる保護層を形成して、十分な耐久性を有する連
続磁性媒体の製造方法を提供することを目的とす
る。
〔問題点を解決するための手段〕
本発明によれば、耐熱基材上にスパツタ法によ
り磁性材料のみによる連続磁性層を形成し、次に
この連続磁性層上にスパツタ法により炭素層を形
成し、続いて炭素層に弗素イオン及びアルゴンイ
オンを同時に照射し、弗素化して弗化炭素薄膜か
らなる連続保護層を連続磁性層上に設けることを
特徴とする連続磁性体媒の製造方法が得られる。
〔作用〕
本発明の作用について述べる。
低圧アルゴン雰囲気中で、高電圧印加してグロ
ー放電等を行うと、アルゴンプラズマを発生す
る。アルゴンプラズマは、ターゲツトに衝突し、
ターゲツトから高速粒子をはじき出す。高速粒子
は、耐熱基材表面に衝突し、基材表面に薄膜を形
成する。陰極のターゲツトを磁性体した場合、耐
熱基材面垂直に磁気異方性を有する薄膜からなる
連続磁性層が形成する。更に、陰極ターゲツトを
カーボンとして、連続磁性層上に炭素層を形成す
る。
次に、真空容器内において、導入された弗素ガ
スを弗素イオンガスにより弗素イオンに、またこ
れと同時に導入されアルゴンガスをアルゴンイオ
ンガンによつてアルゴンイオンをそれぞれ生成さ
せ、同時に炭素層に照射する。２種のイオン照射
された炭素薄膜の弗素化の速度は、アルゴンイオ
ン同時照射により促進され、弗化炭素薄膜形成速
度が大きくなる。
このようにして得られた連続磁性体媒上の弗化
炭素薄膜からなる保護層により耐久性が大きい。
ここで、連続磁性層の磁性材料としてはCo・
Crの他に、Co・Cr、Ni・Feの二層導体及び
Ni・Ｐ・Co等が使用できる。
また、耐熱基材としては、厚さ50μｍ程度のポ
リイミドを使用できるがこれに限定されない。こ
こで、上記した弗化炭素薄膜は（CxＦ）o（ｘは１
から２までの数、ｎは自然数）の化学式で表わさ
れる。
また、連続磁性層及び炭素層は同一容器内でも
可能である。
〔実施例〕
本発明の実施例について図面を参照しながら説
明する。第１図ａは、本発明に係る連続磁性媒体
の連続磁性薄膜形成方法の一例を示す模式図であ
る。この図において、真空容器１２内に、ポリア
ミド製の耐熱基材１と、この基材を支持する基板
ホルダー１１と、CoCrターゲツト１０が配置さ
れている。
真空ポンプ１３に連結する排気管及び、アルゴ
ンガス導入管１４が真空容器１２内に連結するよ
うに設けられている。
真空容器１２内を低圧アルゴンガス雰囲気中１
５で、スパツタ法により耐熱基材１の両面に0.2μ
ｍの厚さでCo・Cr薄膜の連続磁性層２が形成さ
れる。
即ちホルダー１１とターゲツト間に高電圧を印
加し、容器内でグロー放電を発生させ、アルゴン
プラズマを発生させる。アルゴンプラズマは、
Co・Crターゲツト１０からCo・Cr粒子１０ａを
たたき出し、たたき出されたCo・Cr粒子１０ａ
は耐熱基材１面に衝突して、耐熱基材１面上に析
出して、Co・Cr薄膜の連続磁性層を形成する。
第１図ｂは、本発明に係る連続磁性媒体の炭素
薄膜形成方法の一例を示す模式図である。
この図において、Co・Cr薄膜の連続磁性層２
が形成された耐熱基材１は、ホルダー１７に設け
られている。
カーボンターゲツト１６、連続磁性層２付き基
材１及びホルダー１１は真空容器１８内に配置さ
れている。
真空ポンプ１９に連結する排気管及びアルゴン
ガス導入管１４が真空容器１８内に連結するよう
に設けられている。
低圧アルゴンガス雰囲気中２１で、スパツタ法
により、両面の接続磁性層２の上に200Aの厚さ
の薄膜の炭素層４が形成する。
第１図ｃは、本発明に係る連続磁性媒体のフツ
化炭素薄膜形成方法の一例を示す模式図である。
Co・Cr薄膜の磁性層２が形成され、続いてカ
ーボン薄膜４が形成された断熱基材は、真空容器
３１内にありアルゴンイオンのイオンガス３２及
び弗素イオンのイオンガン３３は並設されてお
り、２つのガン３２，３３のイオン照射方向に、
上記耐熱基材の炭素薄膜４面がある。また、容器
３１内に基材ホルダー３４が設けられている。イ
オンガン３２で、導入管３５を経て導入された弗
素ガスは、弗素イオン３６となり基板の炭素薄膜
４に照射する。同時に、並設したイオンガン３３
で、アルゴンガスはアルゴンイオン３８となり、
基材の連続磁性層上の炭素薄膜４面に照射する。
照射された弗素イオン等は炭素薄膜４に衝突し、
反応してフツ化炭素の膜（第２図の３）を形成す
る。得られた連続磁性媒体は、第２図示の構造を
有する。
表１は、このようにして得られた連続磁性媒体
の耐久性の試験結果を示す。
この表は、本発明の実施例により製造された連
続磁性媒体からなるデイスクの、市販の片面用フ
ロツピーデイスクドライバーにセツトし、タツプ
テストを行つた結果を示している。表中、タツプ
回数はテスト開始からドロツプアウトが起こるま
でのタツプ回数を示している。
[Industrial Field of Application] The present invention relates to a method for manufacturing a continuous magnetic medium that is widely used as a recording medium such as a floppy disk, video tape, or audio recording tape. [Prior Art] In recent years, with the demand for high-density magnetic recording, research has been actively conducted on continuous magnetic media in which the magnetic layer is formed only of magnetic materials. Continuous magnetic media are manufactured by vacuum evaporation, sputtering, or plating. Since the magnetic layer of this continuous magnetic medium is a continuous thin film, it is expected to dramatically improve the recording density not only in the longitudinal direction but also in the perpendicular recording method. Further, development of applications to various product forms such as magnetic tapes and disk-shaped magnetic recording media is progressing. In particular, the magnetic layer of a long continuous thin film magnetic medium is
It is formed in the sputtering device as follows. A heat-resistant base material is conveyed in an S-shape by a plurality of guide rolls through a pair of positioning rings and a substrate holder provided at symmetrical positions. When this base material passes through the gap between the ring and the substrate holder, it passes through the hole in the ring from the target provided on the ring side and deposits a magnetic material on the surface of the base material, creating a continuous layer on both sides. A magnetic layer is formed. [Problems to be Solved by the Invention] However, unlike coated magnetic media, the above-mentioned continuous magnetic media do not contain any binder, lubricant, etc. in the magnetic layer, so they lack flexibility and lubricity. There are problems with durability. For this purpose, a film 43 is formed by applying a fluorine-based lubricant 43, silicone oil, higher fatty acids, derivatives thereof, etc. alone or in combination on the continuous magnetic medium surface 42 as shown in FIG. Alternatively, as shown in FIG. 4, an attempt has been made to form a continuous protective layer 53 of amorphous carbon or a compound represented by SiO x (x is a number from 1 to 2) on the surface of the continuous magnetic layer 52. However, none of these methods have achieved sufficient durability. The present invention has been made in view of the above drawbacks, and provides a method for manufacturing a continuous magnetic medium having sufficient durability by forming a protective layer made of a fluorocarbon thin film on the surface of a continuous magnetic layer on a heat-resistant base material. The purpose is to provide. [Means for solving the problem] According to the present invention, a continuous magnetic layer made of only magnetic material is formed on a heat-resistant base material by a sputtering method, and then a carbon layer is formed on this continuous magnetic layer by a sputtering method. Then, the carbon layer is simultaneously irradiated with fluorine ions and argon ions to be fluorinated to provide a continuous protective layer made of a fluorocarbon thin film on the continuous magnetic layer. It will be done. [Operation] The operation of the present invention will be described. When a high voltage is applied and glow discharge is performed in a low-pressure argon atmosphere, argon plasma is generated. The argon plasma impinges on the target,
Repel high-velocity particles from the target. The high-velocity particles collide with the heat-resistant substrate surface and form a thin film on the substrate surface. When the target of the cathode is made of a magnetic material, a continuous magnetic layer consisting of a thin film having magnetic anisotropy is formed perpendicular to the surface of the heat-resistant substrate. Further, using carbon as the cathode target, a carbon layer is formed on the continuous magnetic layer. Next, in the vacuum vessel, the introduced fluorine gas is converted into fluorine ions by a fluorine ion gas, and the introduced argon gas is simultaneously generated into argon ions by an argon ion gun, and the carbon layer is irradiated at the same time. The rate of fluorination of the carbon thin film irradiated with two types of ions is accelerated by simultaneous irradiation with argon ions, and the rate of formation of the fluorinated carbon thin film increases. The protective layer made of a fluorocarbon thin film on the continuous magnetic medium thus obtained has high durability. Here, the magnetic material of the continuous magnetic layer is Co.
In addition to Cr, Co/Cr, Ni/Fe double layer conductors and
Ni, P, Co, etc. can be used. Further, as the heat-resistant base material, polyimide having a thickness of about 50 μm can be used, but the material is not limited thereto. Here, the carbon fluoride thin film described above is (C x F) o (x is 1
to 2, n is a natural number). Further, the continuous magnetic layer and the carbon layer can be placed in the same container. [Example] An example of the present invention will be described with reference to the drawings. FIG. 1a is a schematic diagram showing an example of a method for forming a continuous magnetic thin film of a continuous magnetic medium according to the present invention. In this figure, a heat-resistant base material 1 made of polyamide, a substrate holder 11 that supports this base material, and a CoCr target 10 are arranged in a vacuum container 12. An exhaust pipe connected to the vacuum pump 13 and an argon gas introduction pipe 14 are provided so as to be connected inside the vacuum container 12 . The inside of the vacuum container 12 is placed in a low pressure argon gas atmosphere 1
5, 0.2μ was applied to both sides of the heat-resistant base material 1 by sputtering method.
A continuous magnetic layer 2 of Co/Cr thin film is formed with a thickness of m. That is, a high voltage is applied between the holder 11 and the target, a glow discharge is generated within the container, and argon plasma is generated. Argon plasma is
The Co/Cr particles 10a are knocked out from the Co/Cr target 10, and the Co/Cr particles 10a are knocked out.
collides with one surface of the heat-resistant substrate and precipitates on one surface of the heat-resistant substrate, forming a continuous magnetic layer of Co/Cr thin film. FIG. 1b is a schematic diagram showing an example of a method for forming a carbon thin film on a continuous magnetic medium according to the present invention. In this figure, a continuous magnetic layer 2 of Co/Cr thin film is shown.
The heat-resistant base material 1 on which is formed is provided in a holder 17. The carbon target 16, the base material 1 with the continuous magnetic layer 2, and the holder 11 are placed in a vacuum container 18. An exhaust pipe connected to a vacuum pump 19 and an argon gas introduction pipe 14 are provided so as to be connected within the vacuum container 18 . A thin carbon layer 4 having a thickness of 200 Å is formed on the connecting magnetic layer 2 on both sides by sputtering in a low pressure argon gas atmosphere 21 . FIG. 1c is a schematic diagram showing an example of a method for forming a carbon fluoride thin film on a continuous magnetic medium according to the present invention. The heat insulating base material on which the magnetic layer 2 of Co/Cr thin film is formed and then the carbon thin film 4 is formed is inside a vacuum container 31, and an ion gas 32 of argon ions and an ion gun 33 of fluorine ions are installed in parallel. , in the ion irradiation direction of the two guns 32 and 33,
There are four carbon thin films on the heat-resistant base material. Further, a substrate holder 34 is provided within the container 31. Fluorine gas introduced through the introduction tube 35 by the ion gun 32 becomes fluorine ions 36 and irradiates the carbon thin film 4 of the substrate. At the same time, 33 ion guns installed in parallel
So, the argon gas becomes argon ion 38,
The four sides of the carbon thin film on the continuous magnetic layer of the base material are irradiated.
The irradiated fluorine ions collide with the carbon thin film 4,
The reaction forms a fluorocarbon film (3 in FIG. 2). The obtained continuous magnetic medium has the structure shown in the second figure. Table 1 shows the durability test results of the continuous magnetic media thus obtained. This table shows the results of a tap test on a disk made of a continuous magnetic medium manufactured according to an embodiment of the present invention, which was set in a commercially available single-sided floppy disk driver. In the table, the number of taps indicates the number of taps from the start of the test until dropout occurs.
以上述べた通り、本発明によれば、良好な耐久
性の保護層を有する連続磁性媒体を製造すること
ができ、この磁性媒体の保護層形成に際して、弗
素イオンガスの単独使用のものよりさらに良好な
保護層を有する連続磁性媒体を製造することがで
きる。
As described above, according to the present invention, it is possible to manufacture a continuous magnetic medium having a protective layer with good durability, and when forming the protective layer of this magnetic medium, the quality is even better than that using fluorine ion gas alone. Continuous magnetic media with protective layers can be manufactured.
第１図ａ，ｂ及びｃは、本発明の実施例に係る
連続磁性媒体の製造方法を工程順に示した図、第
２図は、本発明の実施例に係る連続磁性媒体の断
面図、第３図は、従来の連続磁性媒体の一例を示
す断面図、第４図は、従来の連続磁性媒体の他の
一例を示す断面図である。
図中、１は耐熱基材、２は連続磁性層、３は保
護層、４は炭素層、１０はCo・Crターゲツト、
１１，１７及び３４はホルダー、１６はＣターゲ
ツト、３２，３３はイオンガン、３６は弗素イオ
ン、３８はアルゴンイオン、４１は耐熱基材、４
２は連続磁性層、４３は素子潤滑剤層、５１は耐
熱基材、５２は連続磁性層、５３はSiO2皮膜保
護層である。
1a, b, and c are diagrams illustrating a method for manufacturing a continuous magnetic medium according to an embodiment of the present invention in order of steps; FIG. 2 is a sectional view of a continuous magnetic medium according to an embodiment of the present invention; FIG. 3 is a sectional view showing an example of a conventional continuous magnetic medium, and FIG. 4 is a sectional view showing another example of a conventional continuous magnetic medium. In the figure, 1 is a heat-resistant base material, 2 is a continuous magnetic layer, 3 is a protective layer, 4 is a carbon layer, 10 is a Co/Cr target,
11, 17 and 34 are holders, 16 is a C target, 32, 33 are ion guns, 36 is fluorine ions, 38 is argon ions, 41 is a heat-resistant base material, 4
2 is a continuous magnetic layer, 43 is an element lubricant layer, 51 is a heat-resistant base material, 52 is a continuous magnetic layer, and 53 is a SiO 2 film protective layer.
Claims (1)
からなる連続磁性層を形成し、次に上記連続磁性
層上にスパツタ法により炭素層を形成し、続いて
上記炭素層に弗素イオン及びアルゴンイオンを同
時に照射することにより弗素化して、弗化炭素薄
膜からなる連続保護層を上記連続磁性層上に設け
ることを特徴とする連続磁性媒体の製造方法。 ２ 上記磁性材料はCo・Cr、Ni・Fe、Ni・Ｐ・
Coのグループから選択された少なくとも１種か
らなることを特徴とする特許請求の範囲第１項記
載の連続磁性媒体の製造方法。[Claims] 1. A continuous magnetic layer made of only magnetic material is formed on a heat-resistant base material by a sputtering method, a carbon layer is then formed on the continuous magnetic layer by a sputtering method, and then a carbon layer is formed on the carbon layer by a sputtering method. A method for manufacturing a continuous magnetic medium, which comprises fluorinating the continuous magnetic medium by simultaneously irradiating it with fluorine ions and argon ions, and providing a continuous protective layer made of a fluorocarbon thin film on the continuous magnetic layer. 2 The above magnetic materials are Co・Cr, Ni・Fe, Ni・P・
The method for manufacturing a continuous magnetic medium according to claim 1, characterized in that the continuous magnetic medium is made of at least one member selected from the group of Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31522387A JPH01158622A (en) | 1987-12-15 | 1987-12-15 | Production of continuous magnetic medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31522387A JPH01158622A (en) | 1987-12-15 | 1987-12-15 | Production of continuous magnetic medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01158622A JPH01158622A (en) | 1989-06-21 |
| JPH043009B2 true JPH043009B2 (en) | 1992-01-21 |
Family
ID=18062879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31522387A Granted JPH01158622A (en) | 1987-12-15 | 1987-12-15 | Production of continuous magnetic medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01158622A (en) |
-
1987
- 1987-12-15 JP JP31522387A patent/JPH01158622A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01158622A (en) | 1989-06-21 |
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