JPH0432534B2 - - Google Patents

Info

Publication number
JPH0432534B2
JPH0432534B2 JP57182181A JP18218182A JPH0432534B2 JP H0432534 B2 JPH0432534 B2 JP H0432534B2 JP 57182181 A JP57182181 A JP 57182181A JP 18218182 A JP18218182 A JP 18218182A JP H0432534 B2 JPH0432534 B2 JP H0432534B2
Authority
JP
Japan
Prior art keywords
silicon
containing metal
metal film
tungsten
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57182181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5972132A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57182181A priority Critical patent/JPS5972132A/ja
Publication of JPS5972132A publication Critical patent/JPS5972132A/ja
Publication of JPH0432534B2 publication Critical patent/JPH0432534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57182181A 1982-10-19 1982-10-19 金属及び金属シリサイド膜の形成方法 Granted JPS5972132A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57182181A JPS5972132A (ja) 1982-10-19 1982-10-19 金属及び金属シリサイド膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57182181A JPS5972132A (ja) 1982-10-19 1982-10-19 金属及び金属シリサイド膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5972132A JPS5972132A (ja) 1984-04-24
JPH0432534B2 true JPH0432534B2 (fr) 1992-05-29

Family

ID=16113753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57182181A Granted JPS5972132A (ja) 1982-10-19 1982-10-19 金属及び金属シリサイド膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5972132A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621228A (ja) * 1985-06-26 1987-01-07 Fujitsu Ltd タングステンシリサイドの選択成長方法
JP2657488B2 (ja) * 1987-04-07 1997-09-24 日本真空技術 株式会社 金属薄膜形成方法
US5223455A (en) * 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
EP0305143B1 (fr) * 1987-08-24 1993-12-08 Fujitsu Limited Procédé pour la formation sélective d'une couche conductrice
JP2538607B2 (ja) * 1987-08-24 1996-09-25 富士通株式会社 気相成長法
JPS6476759A (en) * 1987-09-17 1989-03-22 Seiko Instr & Electronics Tungsten silicide film and manufacture thereof
JPH01129968A (ja) * 1987-11-13 1989-05-23 Ulvac Corp 金属薄膜形成方法
JPH01129969A (ja) * 1987-11-13 1989-05-23 Ulvac Corp 金属薄膜形成方法
JPH02165628A (ja) * 1988-12-20 1990-06-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5084417A (en) * 1989-01-06 1992-01-28 International Business Machines Corporation Method for selective deposition of refractory metals on silicon substrates and device formed thereby
US5221853A (en) * 1989-01-06 1993-06-22 International Business Machines Corporation MOSFET with a refractory metal film, a silicide film and a nitride film formed on and in contact with a source, drain and gate region
US5202287A (en) * 1989-01-06 1993-04-13 International Business Machines Corporation Method for a two step selective deposition of refractory metals utilizing SiH4 reduction and H2 reduction
JPH02199829A (ja) * 1989-01-30 1990-08-08 Fujitsu Ltd シリコン含有金属膜の形成方法
US5177589A (en) * 1990-01-29 1993-01-05 Hitachi, Ltd. Refractory metal thin film having a particular step coverage factor and ratio of surface roughness

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025895B2 (ja) * 1975-09-29 1985-06-20 株式会社東芝 半導体装置の製造方法
JPS551712A (en) * 1978-06-20 1980-01-08 Hitachi Ltd Electronic switch circuit

Also Published As

Publication number Publication date
JPS5972132A (ja) 1984-04-24

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