JPH0434748U - - Google Patents

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Publication number
JPH0434748U
JPH0434748U JP7637990U JP7637990U JPH0434748U JP H0434748 U JPH0434748 U JP H0434748U JP 7637990 U JP7637990 U JP 7637990U JP 7637990 U JP7637990 U JP 7637990U JP H0434748 U JPH0434748 U JP H0434748U
Authority
JP
Japan
Prior art keywords
pull
resistor
semiconductor integrated
integrated circuit
mos transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7637990U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7637990U priority Critical patent/JPH0434748U/ja
Publication of JPH0434748U publication Critical patent/JPH0434748U/ja
Pending legal-status Critical Current

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  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例のブロツク回路図、
第2図は従来の半導体集積回路装置のブロツク構
成図である。 1,2……PチヤネルMOSトランジスタ(プ
ルアツプ抵抗)、3,4,5……NチヤネルMO
Sトランジスタ(プルダウン抵抗)、6……入力
バツフア回路、7……出力バツフア回路、8,9
……インバータ回路、10……電源端子、20…
…接地端子、11,12,21,22……入力端
子、31,32……出力端子、41……試験用端
子、50……内部論理回路、60……試験用回路
FIG. 1 is a block circuit diagram of an embodiment of the present invention.
FIG. 2 is a block diagram of a conventional semiconductor integrated circuit device. 1, 2...P channel MOS transistor (pull-up resistor), 3, 4, 5...N channel MO
S transistor (pull-down resistor), 6... Input buffer circuit, 7... Output buffer circuit, 8, 9
...Inverter circuit, 10...Power terminal, 20...
...Ground terminal, 11, 12, 21, 22... Input terminal, 31, 32... Output terminal, 41... Test terminal, 50... Internal logic circuit, 60... Test circuit.

Claims (1)

【実用新案登録請求の範囲】 1 入力端子や出力端子にMOSトランジスタで
構成されるプルアツプ抵抗やプルダウン抵抗を備
えた相補型MOSトランジスタで構成したマスタ
ースライス方式の半導体集積回路装置において、
前記プルアツプ抵抗およびプルダウン抵抗を構成
するMOSトランジスタを導通状態および遮断状
態に切り替える試験用回路を備えることを特徴と
する半導体集積回路装置。 2 試験用回路は、プルアツプ抵抗およびプルダ
ウン抵抗を構成するMOSトランジスタのゲート
電圧を制御するように構成してなる実用新案登録
請求の範囲第1項記載の半導体集積回路装置。
[Scope of Claim for Utility Model Registration] 1. In a master slice type semiconductor integrated circuit device configured with complementary MOS transistors having pull-up resistors and pull-down resistors configured with MOS transistors at input terminals and output terminals,
A semiconductor integrated circuit device comprising a test circuit for switching MOS transistors constituting the pull-up resistor and pull-down resistor into a conductive state and a cut-off state. 2. The semiconductor integrated circuit device according to claim 1, wherein the test circuit is configured to control the gate voltage of a MOS transistor constituting a pull-up resistor and a pull-down resistor.
JP7637990U 1990-07-18 1990-07-18 Pending JPH0434748U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7637990U JPH0434748U (en) 1990-07-18 1990-07-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7637990U JPH0434748U (en) 1990-07-18 1990-07-18

Publications (1)

Publication Number Publication Date
JPH0434748U true JPH0434748U (en) 1992-03-23

Family

ID=31617796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7637990U Pending JPH0434748U (en) 1990-07-18 1990-07-18

Country Status (1)

Country Link
JP (1) JPH0434748U (en)

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