JPH01110525U - - Google Patents
Info
- Publication number
- JPH01110525U JPH01110525U JP529788U JP529788U JPH01110525U JP H01110525 U JPH01110525 U JP H01110525U JP 529788 U JP529788 U JP 529788U JP 529788 U JP529788 U JP 529788U JP H01110525 U JPH01110525 U JP H01110525U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- signal processing
- processing circuit
- gate terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Description
第１図は本考案に係る集積回路装置の一例を示
す回路図、第２図は本考案装置により得られるシ
ンク電流値を従来装置と比較して示すグラフ図、
第３図は本考案に係る第２の集積回路装置の一例
を示す回路図、第４図は従来の集積回路装置の一
例を示す回路図、第５図はドレイン電流―電圧の
関係を示すグラフ図である。
１１…信号処理部、１２，１５，２２，２５，
３２，３５，４２，４５…電界効果トランジスタ
、１３，２３，３３，４３…ポリシリコン抵抗、
１４，１６，２４，２６，３６，４６…出力端子
。
FIG. 1 is a circuit diagram showing an example of an integrated circuit device according to the present invention, and FIG. 2 is a graph showing a sink current value obtained by the device of the present invention in comparison with a conventional device.
FIG. 3 is a circuit diagram showing an example of a second integrated circuit device according to the present invention, FIG. 4 is a circuit diagram showing an example of a conventional integrated circuit device, and FIG. 5 is a graph showing the relationship between drain current and voltage. It is a diagram. 11... Signal processing unit, 12, 15, 22, 25,
32, 35, 42, 45... Field effect transistor, 13, 23, 33, 43... Polysilicon resistor,
14, 16, 24, 26, 36, 46...output terminals.
Claims (1)
レイン端子に前記信号処理回路の電源電圧以上の
電圧が印加される第１の電界効果トランジスタと
、該第１の電界効果トランジスタのドレイン端子
にゲート端子を接続した負荷駆動用の第２の電界
効果トランジスタとを備えることを特徴とする半
導体集積回路装置。 a first field effect transistor having a gate terminal connected to a signal processing circuit and having a drain terminal applied with a voltage higher than a power supply voltage of the signal processing circuit; and a gate terminal connected to the drain terminal of the first field effect transistor. A semiconductor integrated circuit device comprising: a second field effect transistor connected to the device for driving a load;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP529788U JPH01110525U (en) | 1988-01-21 | 1988-01-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP529788U JPH01110525U (en) | 1988-01-21 | 1988-01-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01110525U true JPH01110525U (en) | 1989-07-26 |
Family
ID=31208551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP529788U Pending JPH01110525U (en) | 1988-01-21 | 1988-01-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01110525U (en) |
-
1988
- 1988-01-21 JP JP529788U patent/JPH01110525U/ja active Pending