JPH0436256U - - Google Patents
Info
- Publication number
- JPH0436256U JPH0436256U JP7823990U JP7823990U JPH0436256U JP H0436256 U JPH0436256 U JP H0436256U JP 7823990 U JP7823990 U JP 7823990U JP 7823990 U JP7823990 U JP 7823990U JP H0436256 U JPH0436256 U JP H0436256U
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- silicon layer
- insulating layer
- layer
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Description
第１図は、本考案に係る一実施例の薄膜トラン
ジスタの断面説明図、第２図は電子経路を説明す
るための薄膜トランジスタの部分的断面説明図、
第３図はａ〜ｃはの製造プロセス断面説明図、第
４図は従来の薄膜トランジスタの断面説明図、第
５図は従来の電子経路を説明するための薄膜トラ
ンジスタの部分的断面説明図である。
１……基板、２……ゲート電極、３……下部絶
縁層、４……イントリンシツクアモルフアスシリ
コン層、５……上部絶縁層、６……ｎ＋アモルフ
アスシリコン層、７……金属層、８……ｐ型アモ
ルフアスシリコン層、９……ｎ型アモルフアスシ
リコン層、１１……ドレイン電極、１２……ソー
ス電極。
FIG. 1 is a cross-sectional explanatory diagram of a thin film transistor according to an embodiment of the present invention, FIG. 2 is a partial cross-sectional explanatory diagram of a thin film transistor for explaining electron paths,
3A to 3C are cross-sectional explanatory views of the manufacturing process, FIG. 4 is a cross-sectional view of a conventional thin film transistor, and FIG. 5 is a partial cross-sectional view of a conventional thin film transistor for explaining electron paths. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Gate electrode, 3...Lower insulating layer, 4...Intrinsic amorphous silicon layer, 5...Upper insulating layer, 6...n + amorphous silicon layer, 7...Metal Layer 8...p-type amorphous silicon layer, 9...n-type amorphous silicon layer, 11...drain electrode, 12...source electrode.
Claims (1)
する下部絶縁層と、前記下部絶縁層を介して前記
ゲート電極上部に形成されたイントリンシツクア
モルフアスシリコン層と、前記イントリンシツク
アモルフアスシリコン層上部に形成された上部絶
縁層と、前記上部絶縁層を挟んで分割形成された
ｎ＋アモルフアスシリコン層と、前記ｎ＋アモル
フアスシリコン層を被覆する金属層とを有する薄
膜トランジスタにおいて、 前記イントリンシツクアモルフアスシリコン層
と前記上部絶縁層との境界にｐ型アモルフアスシ
リコン層を設け、前記イントリンシツクアモルフ
アスシリコン層と前記ｎ＋アモルフアスシリコン
層との境介にｎ型アモルフアスシリコン層を設け
たことを特徴とする薄膜トランジスタ。[Claims for Utility Model Registration] A gate electrode on a substrate, a lower insulating layer covering the gate electrode, and an intrinsic amorphous silicon layer formed on the gate electrode via the lower insulating layer, an upper insulating layer formed on the intrinsic amorphous silicon layer, an n + amorphous silicon layer formed in sections with the upper insulating layer in between, and a metal layer covering the n + amorphous silicon layer. In the thin film transistor, a p-type amorphous silicon layer is provided at the boundary between the intrinsic amorphous silicon layer and the upper insulating layer, and a p-type amorphous silicon layer is provided at the boundary between the intrinsic amorphous silicon layer and the n + amorphous silicon layer. A thin film transistor characterized in that an n-type amorphous silicon layer is provided therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7823990U JP2522832Y2 (en) | 1990-07-25 | 1990-07-25 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7823990U JP2522832Y2 (en) | 1990-07-25 | 1990-07-25 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0436256U true JPH0436256U (en) | 1992-03-26 |
| JP2522832Y2 JP2522832Y2 (en) | 1997-01-16 |
Family
ID=31621338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7823990U Expired - Lifetime JP2522832Y2 (en) | 1990-07-25 | 1990-07-25 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2522832Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840936B (en) * | 2009-02-13 | 2014-10-08 | 株式会社半导体能源研究所 | Semiconductor device including a transistor, and manufacturing method of the semiconductor device |
-
1990
- 1990-07-25 JP JP7823990U patent/JP2522832Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2522832Y2 (en) | 1997-01-16 |