JPH0436459A - Method of manufacturing thin film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing a thin film, in which a heat absorbing thin film is deposited on a heat transmitting substrate.

Conventional thin film forming technology generally involves fixing a substrate on which a thin film is to be formed to a heating element and heating the substrate to set the substrate temperature to an appropriate temperature to form a thin film. Setting the substrate temperature during thin film deposition often has a large effect on the quality of the thin film, but with appropriate temperature control,
When using a vacuum evaporation method or a sputtering method, it is also possible to perform epitaxial growth on the L 2 substrate, and it is possible to obtain a thin film with extremely excellent crystallinity.

Problems to be solved by the invention When forming a thin film by fixing a substrate to a heating element and heating it
Because the thermal contact between the heating element and the board is not good, and the board is heated to a relatively high temperature (the heating element itself also becomes quite high temperature, relatively strong heat rays (infrared rays) are emitted. In this case, the substrate tends to be heated by the heat rays, and the absorption rate of the heat rays of the substrate and the deposited thin film has a large effect on the substrate temperature.Especially when forming a heat ray absorbing thin film on a heat ray transmitting substrate, As the thin film is formed, the absorption rate of heat rays changes moment by moment, and there is a problem that the effective substrate temperature is not constant during the thin film formation.
Furthermore, there are problems such as differences between the surface and the inside of the film, and the unevenness of the film's storage rate, which makes it relatively difficult to maintain good thermal contact between the heating element and the substrate, resulting in poor heat distribution on the substrate. In order to solve the problem of non-uniform properties of thin films formed on a substrate due to non-uniformity, the present invention provides a method for manufacturing thin films while uniformizing the substrate temperature and measuring the effective substrate temperature. Means for Solving the Problems In order to achieve the above objects, a method for producing a thin film according to the present invention is provided. A heat ray-absorbing thin film may be deposited on the other surface of the substrate, which is opposite to the surface on which the heat ray absorbing film is formed, and which is fixed so as not to come into contact with the heating element; A substrate with a heat-absorbing thin film formed on one side of the substrate and a heat-absorbing thin film formed on the opposite surface is fixed so that the heat-absorbing coating does not come into contact with the heating element, and the temperature of the heat-absorbing thin film of the substrate is measured. It forms a heat ray absorbing thin film.With the above structure, the heat rays (infrared rays) from the heating element are first absorbed by the heat ray absorbing film and its temperature rises.
When the temperature of the heat ray absorption film rises, the heat ray transmission substrate in contact with it is heated by conduction and radiates heat rays, while at the same time transmitting a portion of the heat rays from the heat ray absorption film.The heat ray absorption thin film formed on the heat ray transmission substrate is The temperature of the heat ray absorbing thin film of the base fixed on the other side of the heating element is different from that of the base fixed on one side of the heating element because it is uniformly heated by the radiant heat and the transmitted heat ray from the heat ray absorbing substrate. By measuring the substrate temperature of the above-mentioned substrate, the present invention will be described in detail below with reference to the drawings. This is an example of a method for manufacturing a thin film, and shows a method for fixing a substrate to a heating element during manufacturing of a thin film.
), 1 has a heat ray absorbing film 3 on one side of the heat ray transmitting substrate 2.
Even if a heater made of Kanthal wire is built into the heating element 4 in FIG. 1(b), the heat ray transmitting substrate 2 is made of magnesium oxide (MgO).
Using a single crystal, a heat ray absorbing film 3 made of (Ca-Cu-0) oxide of about 1100 nm is formed on one side of the heat ray transmitting substrate 2 by direct current magnetron sputtering.
．． 5' was used to fix the base 1 so as not to contact the surface 6 of the heating element 4. With this configuration, the high frequency magnetron sputtering method was used as described in 1.1. An oxide target containing Bi, Sr, Ca, Cu, and 0 was placed on the MgO single crystal substrate 2 in a mixed gas of argon and oxygen (Ar: Oe = 2: 1, pressure 0.4 Pa).
) to form a heat-absorbing thin film. Figure 2 shows the relationship between the sputtering time and the thickness of the formed heat-absorbing thin film. The same figure shows that the deposition rate of the membrane is approximately 1.
It can be seen that the rate is constant at 3 nm/min.Also, regarding the crystallinity of the thin film formed,
The results of measurement using the linear diffraction method showed excellent crystallinity similar to that of B1, as shown in Figure 3.
-3r-Ca-Cu-0 thin film formation Q The relationship between the sputtering time and the thickness of the formed film is shown. like this&
Even though the deposition rate decreases as the film thickness increases, the misbatter time and film thickness are proportional. Even though it is known that the deposition rate decreases, is this true?5 B1-3r-Ca
It is thought that by forming the -Cu-0 thin film, the heat rays radiated from the heating element are absorbed by the thin film that passes through the substrate, and that the effective substrate temperature increases as the film thickness increases. Although it has been confirmed that the crystallinity of the film obtained by the method changes depending on the film thickness, FIGS. 4(a) and 4(b) show other embodiments of the present invention, and Differences from the illustrated embodiment 1: A temperature measuring base 8 is provided on the other surface 7 of the heating element 4.
The heat rays 9 radiated from there are measured using a heat radiation thermometer (not shown).
In order to manufacture a heat ray-absorbing thin film on the substrate 1 while measuring the temperature, the substrate 8 for temperature measurement is the same as the substrate 1 on one side of the MgO single crystal substrate 2, which is the same as the substrate 1, as shown in FIG. 4(b). A heat ray absorbing film 3 of Ca-Cu-0 oxide with a thickness of about 1100 nm is formed, and a heat ray absorbing thin film 10 of about 20 nm thick is formed on the other side.
0 nm formed in the same holder 5, 5 as the substrate 1.
Bi, Sr, Ca,
An oxide target containing Cu, 0 was used in a mixed gas of t, X, argon, and oxygen (Ar:02=2:1,
Sputtering is performed at a pressure of 0.4 Pa) to form a heat ray absorbing thin film.The substrate temperature is determined by measuring the heat rays radiated from the temperature measurement base 8 using a thermal radiation thermometer. It was found that the temperature measurement substrate 8 was maintained at about 600 °C by flowing the heat ray CL at this temperature. It is known that it is absorbed by oxides.

Regarding the base 1, it has been confirmed that it is fixed to a heating element in the same state as the temperature measuring base 8 and has the same temperature as the temperature measuring base 8.

In this way, the substrate temperature can be measured using radiation from the temperature measurement substrate 8. Temperature measurement can be performed at the same time as the thin film is deposited. In addition, it has the advantage of being able to prevent the effects of noise from high-frequency power supplies, which can be a problem when using thermocouples.
Q. The strength described using Ca-Cu-0 oxide as a heat ray absorbing film and B1-3r-Ca-Cu-0 oxide as a heat ray absorbing thin film is not limited to these materials.
The effectiveness of the present invention can be achieved by using a material through which the heat rays radiated from the heating element can pass through as the heat ray transmitting substrate and using a material that absorbs heat rays as the heat ray absorbing thin film. In the above example, a material using an oxide film was used.Nitriding method It is especially effective to use a material such as carbide, which has a melting point higher than the temperature of the heating element, has a high heat ray absorption rate (and has a high thermal conductivity). As described above, the thin film manufacturing method of the present invention maintains a uniform substrate temperature during thin film formation, which is an especially important factor when forming compound thin films with complex structures. Therefore, it is extremely effective for forming thin films of highly functional materials with complex structures, such as oxide superconducting thin films, and has extremely high industrial value.

[Brief explanation of drawings]

FIG. 1(a) is a sectional view of a base in an embodiment of the present invention.
FIG. 1(b) is a perspective view of the thin film manufacturing method in the first embodiment. FIG. 2 is a view showing the relationship between deposition and descent of the heat ray absorbing thin film in the present invention and the thickness of the deposited film. FIG. 3 is a conventional method. This is a cross-sectional view of the wood substrate. Substrate 2. Heat-transmitting substrate 3. Heat-absorbing film 4. Heat-generating layer Name of agent: Patent attorney Shigetaka Awano and 1 other person

Claims (2)

[Claims] (1) A heat ray transmitting substrate with a heat ray absorbing film formed on one side thereof is used, the heat ray absorbing film is fixed so as not to come into contact with the heating element, and the other surface of the base body facing the surface on which the heat ray absorbing film is formed is fixed. A method for producing a thin film by depositing a heat ray absorbing thin film. (2) A heat ray transmitting substrate with a heat ray absorbing film formed on one side and a heat ray absorbing thin film formed on the opposite surface is fixed to one side of the heating element so that the heat ray absorbing film does not come into contact with the heating element, and the heat rays are generated. A heat ray absorbing film formed on one side of a heat ray transmitting substrate is fixed to the other surface of the body so that the heat ray absorbing film does not come into contact with the heating element, and the heat rays of the base fixed to one surface of the heating element are fixed. 2. The method of manufacturing a thin film according to claim 1, wherein the heat ray absorbing thin film is deposited on a heat ray transmitting substrate of a base fixed to the other surface of the heating element while measuring the temperature of the thin film.