JPH0436760U - - Google Patents

Info

Publication number
JPH0436760U
JPH0436760U JP7807890U JP7807890U JPH0436760U JP H0436760 U JPH0436760 U JP H0436760U JP 7807890 U JP7807890 U JP 7807890U JP 7807890 U JP7807890 U JP 7807890U JP H0436760 U JPH0436760 U JP H0436760U
Authority
JP
Japan
Prior art keywords
electron beam
gas introduction
generation source
beam generation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7807890U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7807890U priority Critical patent/JPH0436760U/ja
Publication of JPH0436760U publication Critical patent/JPH0436760U/ja
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の実施例装置の概略図、第2図
は本考案の実施例装置における動作を示す図、第
3図は従来例装置の概略図である。 1……試料、2……中性粒子ビーム発生源、3
……電源、4……ガスボンベ、5,8……切換え
弁、6……流量調節弁、7……真空ポンプ、9…
…比較回路、10……制御回路、11……外部ス
イツチ。
FIG. 1 is a schematic diagram of a device according to an embodiment of the present invention, FIG. 2 is a diagram showing the operation of the device according to an embodiment of the present invention, and FIG. 3 is a schematic diagram of a conventional device. 1... Sample, 2... Neutral particle beam source, 3
...Power source, 4...Gas cylinder, 5, 8...Switching valve, 6...Flow rate control valve, 7...Vacuum pump, 9...
... Comparison circuit, 10 ... Control circuit, 11 ... External switch.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子線発生源と電子線発生源から発生した電子
の通路上に被イオン化ガスを導入するガス導入手
段とを備えた一次粒子発生源から発生した一次粒
子を真空雰囲気内に配置される試料に照射して試
料をイオン化するイオン源において、該電子線発
生源から発生する電子線電流に対応した信号を得
る手段と、前記ガス導入手段によるガス導入を遮
断する手段と、前記電子線電流に対応した信号が
所定の閾値を越えた時にガス導入を開始し、且つ
前記電子線発生源における電子線発生の停止と連
動してガス導入を停止するように遮断手段を制御
する制御手段とを設けたことを特徴とするイオン
源。
A sample placed in a vacuum atmosphere is irradiated with primary particles generated from a primary particle generation source comprising an electron beam generation source and a gas introduction means for introducing an ionized gas onto the path of electrons generated from the electron beam generation source. In an ion source that ionizes a sample by ionizing a sample, the ion source includes means for obtaining a signal corresponding to the electron beam current generated from the electron beam generation source, means for blocking gas introduction by the gas introduction means, and a means for obtaining a signal corresponding to the electron beam current generated from the electron beam generation source. A control means is provided for controlling the cutoff means to start gas introduction when the signal exceeds a predetermined threshold, and to stop the gas introduction in conjunction with the stop of electron beam generation in the electron beam generation source. An ion source characterized by:
JP7807890U 1990-07-23 1990-07-23 Pending JPH0436760U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7807890U JPH0436760U (en) 1990-07-23 1990-07-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7807890U JPH0436760U (en) 1990-07-23 1990-07-23

Publications (1)

Publication Number Publication Date
JPH0436760U true JPH0436760U (en) 1992-03-27

Family

ID=31621039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7807890U Pending JPH0436760U (en) 1990-07-23 1990-07-23

Country Status (1)

Country Link
JP (1) JPH0436760U (en)

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