JPH0442496A - Nonvolatile ram - Google Patents
Nonvolatile ramInfo
- Publication number
- JPH0442496A JPH0442496A JP2148811A JP14881190A JPH0442496A JP H0442496 A JPH0442496 A JP H0442496A JP 2148811 A JP2148811 A JP 2148811A JP 14881190 A JP14881190 A JP 14881190A JP H0442496 A JPH0442496 A JP H0442496A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- sram
- circuit
- supply voltage
- written
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 230000004044 response Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、正常な電源電圧時には、高速RAMとして読
み書きができ、停電等の電圧低下時には、記憶内容が自
動的に不揮発性メモリ (E2ROM)部に書き込まれ
て保存される不揮発性RAMに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention can be read and written as a high-speed RAM when the power supply voltage is normal, and when the voltage drops due to a power outage, the stored contents are automatically transferred to a non-volatile memory (E2ROM). This relates to non-volatile RAM that is written to and stored in the memory.
第3図は従来の通称NVRAMと呼ばれる不揮発性RA
Mの構成を示す。Figure 3 shows the conventional non-volatile RA commonly known as NVRAM.
The configuration of M is shown.
高速で読み書きできるSRAM 1と、SRAM 1の
記憶内容を保存するための電気的に書き換えのできるE
2ROM 2と、書き込み信号によりSRAM 1の記
憶内容をE2ROM 2に書き込む書き込み回路3とを
ワンチップ上に配設した構成になっていて、外部からの
書き込み信号によりSRAM lの記憶内容をE2RO
M2に書き込んでおけば、停電時等に、その記憶内容を
保存することができる。しかし、SRAM 1のリアル
タイムの記憶内容は消滅する。SRAM 1 that can read and write at high speed and E that can be electrically rewritten to save the memory contents of SRAM 1
2ROM 2 and a write circuit 3 that writes the memory contents of SRAM 1 to E2ROM 2 in response to a write signal are arranged on one chip.
By writing to M2, the memory contents can be saved in the event of a power outage, etc. However, the real-time storage contents of SRAM 1 are erased.
すなわち、リアルタイムの記憶内容は、揮発性であるこ
とにおいて、通常の揮発性RAMの場合と変ることがな
い。That is, the real-time storage contents are volatile, which is the same as in a normal volatile RAM.
従来のNVRAM−において停電時等にリアルタイムの
記憶内容を保存するには、第4図に示すような構成を採
らねばならない。In order to save real-time memory contents in a conventional NVRAM during a power outage, a configuration as shown in FIG. 4 must be adopted.
図において11はNVRAM 、12は電源電圧の低下
を検出し、電源電圧が低下したときNVRAM 11に
書き込み信号を送る電源電圧検出回路、13は停電等に
よる電源電圧低下時にE2ROMへの書き込みに要する
電源を供給するバックアップ電源回路である。In the figure, 11 is the NVRAM, 12 is a power supply voltage detection circuit that detects a drop in the power supply voltage and sends a write signal to the NVRAM 11 when the power supply voltage drops, and 13 is the power supply required to write to the E2ROM when the power supply voltage drops due to a power outage, etc. This is a backup power supply circuit that supplies
従来のNVRAMは、単体では、停電のような予期しな
い電源電圧低下時には、記憶内容が保存されないという
問題があった。Conventional NVRAMs have a problem in that when used alone, the memory contents are not saved in the event of an unexpected drop in power supply voltage such as a power outage.
また、上記のような場合、記憶内容を保存するには、別
に、電源電圧が低下するとNVRAMに書き込み信号を
送る電源電圧検出回路と、停電時にE2ROM 2へ書
き込み回路3を動作させるに必要な電源を供給するバッ
クアンプ電源回路とこの電源回路を制御する制御回路を
付設する必要があり、煩雑で、そのうえ、装置全体が占
めるスペースが大きくなるという問題があった。In addition, in the above case, in order to save the memory contents, a power supply voltage detection circuit that sends a write signal to the NVRAM when the power supply voltage drops, and a power supply necessary to operate the write circuit 3 to the E2ROM 2 in the event of a power outage are required. It is necessary to provide a back amplifier power supply circuit for supplying power and a control circuit for controlling this power supply circuit, which is complicated, and furthermore, there is a problem that the entire device occupies a large space.
本発明は上記の問題を解消するためになされたもので、
単体で、停電のような不測の電源電圧低下時にも、その
ときの記憶内容が保存される小型で不揮発性RAMを提
供することを目的とする。The present invention was made to solve the above problems.
It is an object of the present invention to provide a small-sized non-volatile RAM that can save its memory contents even when the power supply voltage drops unexpectedly such as a power outage.
本発明の不揮発性RAMは、高速で読み書きできるSR
AMと、該SRAMの記憶内容を保存するための電気的
に書き換えのできる不揮発性のE!ROMと、書き込み
信号により上記SRAMの記憶内容を上記E2ROMに
書き込む書き込み回路のほかに、電源電圧が低下すると
これを検知して上記書き込み回路に書き込み信号を送る
電源電圧検出回路と、電源電圧低下時に上記SRAMの
記憶内容を上記E2ROMに書き込んでしまうまで電源
をバフクアソプするバックアップ電源回路をワンチップ
上に配設し、停電時に自動的に上記SRAMの記憶内容
が上記E2ROMに書き込まれて保存される構成とした
ものである。The nonvolatile RAM of the present invention is an SR that can read and write at high speed.
AM and an electrically rewritable non-volatile E! to save the memory contents of the SRAM. In addition to the ROM and a write circuit that writes the stored contents of the SRAM to the E2ROM using a write signal, there is also a power supply voltage detection circuit that detects when the power supply voltage drops and sends a write signal to the write circuit, and a power supply voltage detection circuit that detects when the power supply voltage drops and sends a write signal to the write circuit. A backup power supply circuit is provided on one chip to buffer the power supply until the memory contents of the SRAM are written to the E2ROM, and the memory contents of the SRAM are automatically written to and saved in the E2ROM in the event of a power outage. That is.
第1図は本発明の一実施例の構成を示し、第2図は第1
図の一実施例におけるバンクアップ電源回路の具体例を
示す。FIG. 1 shows the configuration of one embodiment of the present invention, and FIG.
A specific example of the bank-up power supply circuit in one embodiment of the figure is shown.
図において1.2.3は第3図の同一符号と同一または
相当する部分を示し、4は電源電圧検出回路、5はバン
クアップ電源、6は電源チャージ回路である。In the figure, 1, 2 and 3 indicate the same or corresponding parts as the same reference numerals in FIG. 3, 4 is a power supply voltage detection circuit, 5 is a bank up power supply, and 6 is a power supply charging circuit.
バックアップ電源5用のコンデンサはワンチップ内に内
蔵するのが難しい場合があるが、他の回路部分会てをワ
ンチップ内に一体に内蔵することは容易である。Although it may be difficult to incorporate the capacitor for the backup power supply 5 into one chip, it is easy to integrate other circuit parts into one chip.
バックアップ電源5用のコンデンサを千ノブ内に内蔵す
る場合は、IC’として容量が大きくならないように、
多積化したり、強誘電膜を使用することにより対応する
ことができる。If the capacitor for backup power supply 5 is built into the 1000 knob, please make sure that the capacitance does not increase as IC'.
This can be handled by multi-layering or using a ferroelectric film.
電源電圧が低下した場合、電源電圧検出回路4により検
出され、該検出回路4から自動的に書き込み回路3に書
き込み信号が送られ、SRAM 1のメモリセルの内容
がE2ROM 2のメモリセルに書き込まれる。この時
書き込み動作に必要な電源は、電源電圧がすでに低下し
ているため、バックアップ電源5から供給される。When the power supply voltage drops, it is detected by the power supply voltage detection circuit 4, and a write signal is automatically sent from the detection circuit 4 to the write circuit 3, and the contents of the memory cells of SRAM 1 are written to the memory cells of E2ROM 2. . At this time, the power required for the write operation is supplied from the backup power supply 5 because the power supply voltage has already decreased.
バックアップ電源5はE2ROM 2にSRAM 1の
記憶内容が書き込まれる期間のみ電圧が保持されていれ
ばよい。The voltage of the backup power supply 5 only needs to be maintained during the period when the storage contents of the SRAM 1 are written into the E2ROM 2.
バンクアップ電源5のコンデンサは、電源電圧が正常な
間は電源チャージ回路6により常時チャージされている
。そして、電源チャージ回路6は、電源電圧が低下した
時のバックアップ電源5のコンデンサの放電電流が外部
に流れ出すのを防止する働きもする。The capacitor of the bank-up power supply 5 is constantly charged by the power supply charging circuit 6 while the power supply voltage is normal. The power supply charging circuit 6 also functions to prevent the discharge current of the capacitor of the backup power supply 5 from flowing outside when the power supply voltage decreases.
バンクアップ電源5にコンデンサでなく二次電池を使用
してもよい。A secondary battery may be used as the bank-up power supply 5 instead of a capacitor.
以上説明したように、本発明によると、ワンチップ上の
構成により、停電時等に記憶内容が保存されることによ
り、従来採られていた構成に比べ、煩雑さがなくなり、
占有するスペースが小さくなり、かつ装置の信顧性が向
上するという効果がある。As explained above, according to the present invention, the one-chip configuration saves the memory contents in the event of a power outage, which eliminates complexity compared to the conventional configuration.
This has the effect of reducing the space occupied and improving the reliability of the device.
第1図は本発明の一実施例の構成を示す説明図、第2図
は第1図の一実施例におけるバックアップ電源回路の具
体例を示す説明図、第3図は従来の通称NVRAMと呼
ばれる不揮発性RAMの構成を示す説明図、第4図は従
来のNVRAMにより停電時等にリアルタイムの記憶内
容を保存する場合の構成を示す図である。
1・・・SRAM、2・・・E2ROM 、3・・・書
き込み回路、4・・・電源電圧検出回路、5・・・バッ
クアップ電源、6・・・電源チャージ回路
なお図中同一符号は同一または相当するものを示す。
特許出廓人 新日本無線株式会社
第
図
第
図Fig. 1 is an explanatory diagram showing the configuration of an embodiment of the present invention, Fig. 2 is an explanatory diagram showing a specific example of a backup power supply circuit in the embodiment of Fig. 1, and Fig. 3 is a conventional NVRAM. FIG. 4 is an explanatory diagram showing the structure of a non-volatile RAM. FIG. 4 is a diagram showing a structure in which real-time storage contents are saved in the event of a power outage or the like using a conventional NVRAM. 1...SRAM, 2...E2ROM, 3...Writing circuit, 4...Power supply voltage detection circuit, 5...Backup power supply, 6...Power supply charge circuit Note that the same symbols in the drawings indicate the same or Show equivalent. Patent distributor: New Japan Radio Co., Ltd.
Claims (1)
容を保存するための電気的に書き換えのできる不揮発性
のE^2ROMと、書き込み信号により上記SRAMの
記憶内容を上記E^2ROMに書き込む書き込み回路と
、電源電圧が低下するとこれを検知して上記書き込み回
路に書き込み信号を送る電源電圧検出回路と、停電時に
上記SRAMの記憶内容を上記E^2ROMに書き込ん
でしまうまで電源をバックアップするバックアップ電源
回路とをランチップ上に配設し、停電時に自動的に上記
SRAMの記憶内容が上記E^2ROMに書き込まれて
保存される構成としたことを特徴とする不揮発性RAM
。An SRAM that can be read and written at high speed, an electrically rewritable non-volatile E^2ROM for storing the memory contents of the SRAM, and a write circuit that writes the memory contents of the SRAM to the E^2ROM in response to a write signal. A power supply voltage detection circuit detects when the power supply voltage drops and sends a write signal to the write circuit, and a backup power supply circuit backs up the power supply until the memory contents of the SRAM are written to the E^2ROM in the event of a power outage. A non-volatile RAM disposed on a run chip, and configured such that the memory contents of the SRAM are automatically written to and saved in the E^2ROM in the event of a power outage.
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2148811A JPH0442496A (en) | 1990-06-08 | 1990-06-08 | Nonvolatile ram |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2148811A JPH0442496A (en) | 1990-06-08 | 1990-06-08 | Nonvolatile ram |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0442496A true JPH0442496A (en) | 1992-02-13 |
Family
ID=15461244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2148811A Pending JPH0442496A (en) | 1990-06-08 | 1990-06-08 | Nonvolatile ram |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0442496A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06309234A (en) * | 1993-02-15 | 1994-11-04 | Toshiba Corp | Disk controller |
| US5511183A (en) * | 1992-05-12 | 1996-04-23 | Fujitsu Limited | Non-volatile memory controlling apparatus and applications of the same to electronic computer peripheral equipments |
| WO2003067602A1 (en) * | 2002-02-08 | 2003-08-14 | Sony Corporation | Composite storage circuit and semiconductor device having the same |
| WO2004012198A1 (en) * | 2002-07-29 | 2004-02-05 | Sony Corporation | Composite storage circuit and semiconductor device having the same composite storage circuit |
| JP2007305294A (en) * | 2007-06-22 | 2007-11-22 | Texas Instr Japan Ltd | Semiconductor device, semiconductor memory device, and semiconductor memory cell |
| JP2012133746A (en) * | 2010-12-20 | 2012-07-12 | Lsi Corp | Data manipulation during memory backup |
| JP2012133748A (en) * | 2010-12-20 | 2012-07-12 | Lsi Corp | Data manipulation during power failure |
| JP2013198958A (en) * | 2012-03-26 | 2013-10-03 | Daihen Corp | Robot control device |
-
1990
- 1990-06-08 JP JP2148811A patent/JPH0442496A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5511183A (en) * | 1992-05-12 | 1996-04-23 | Fujitsu Limited | Non-volatile memory controlling apparatus and applications of the same to electronic computer peripheral equipments |
| US5767647A (en) * | 1992-05-12 | 1998-06-16 | Fujitsu Limited | Non-volatile memory controlling apparatus and applications of the same to electronic computer peripheral equipment |
| US5982120A (en) * | 1992-05-12 | 1999-11-09 | Fujitsu Limited | Library apparatus having a motor driving control including abnormal motor and excess current detecting circuits |
| JPH06309234A (en) * | 1993-02-15 | 1994-11-04 | Toshiba Corp | Disk controller |
| EP1473733A4 (en) * | 2002-02-08 | 2005-07-27 | Sony Corp | COMPOSITE MEMORY CIRCUIT AND SEMICONDUCTOR DEVICE COMPRISING THE CIRCUIT |
| WO2003067602A1 (en) * | 2002-02-08 | 2003-08-14 | Sony Corporation | Composite storage circuit and semiconductor device having the same |
| US7385845B2 (en) | 2002-02-08 | 2008-06-10 | Sony Corporation | Composite storage circuit and semiconductor device having the same |
| WO2004012198A1 (en) * | 2002-07-29 | 2004-02-05 | Sony Corporation | Composite storage circuit and semiconductor device having the same composite storage circuit |
| US7130224B2 (en) | 2002-07-29 | 2006-10-31 | Sony Corporation | Composite storage circuit and semiconductor device having the same composite storage circuit |
| EP1542235A4 (en) * | 2002-07-29 | 2007-03-07 | Sony Corp | COMPOSITE STORAGE CIRCUIT AND SEMICONDUCTOR DEVICE COMPRISING THE COMPOSITE STORAGE CIRCUIT |
| JP2007305294A (en) * | 2007-06-22 | 2007-11-22 | Texas Instr Japan Ltd | Semiconductor device, semiconductor memory device, and semiconductor memory cell |
| JP2012133746A (en) * | 2010-12-20 | 2012-07-12 | Lsi Corp | Data manipulation during memory backup |
| JP2012133748A (en) * | 2010-12-20 | 2012-07-12 | Lsi Corp | Data manipulation during power failure |
| TWI552153B (en) * | 2010-12-20 | 2016-10-01 | 安華高科技通用Ip(新加坡)公司 | Data manipulation of power fail |
| JP2013198958A (en) * | 2012-03-26 | 2013-10-03 | Daihen Corp | Robot control device |
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