JPH0442567A - semiconductor equipment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having a MOS transistor structure for signal input and signal output elements, and relates to the arrangement of gate electrodes.

[Conventional technology]

In a conventional semiconductor device having a MOS transistor structure as a signal input and signal output element, as shown in the partial top view of the semiconductor device in FIG. 2(a), the gate electrode 201
．． 202, 205, 204 are lined up in different directions,
Not all of them were lined up in parallel in the same direction.

[Invention solves the problem ν! Problem 5] However, in conventional semiconductor devices having MOS transistor structures as signal input and signal output elements, the direction of ion implantation performed during the manufacturing process is not perpendicular to the semiconductor substrate. As shown in FIG.
209 is different, and the MOS is weak against static electricity.
Transistors came into existence.

Therefore, in order to eliminate the MO8 transistors, which are susceptible to static electricity, the present invention uses them as all signal input and signal output elements in a direction parallel to the component of the semiconductor substrate surface direction of the general ion implantation direction in the semiconductor manufacturing process. The purpose is to align the directions of the gate electrodes of MOS transistors and to arrange them in parallel, thereby preventing the creation of MO8 transistors that are susceptible to static electricity.

[Failure to solve the problem]

The present invention provides a semiconductor device having a MOS transistor structure for signal input and signal output elements, in which the gate electrodes of the MOS transistors constituting the signal input and signal output elements are all aligned in the same direction. [Embodiment] The semiconductor device of the present invention basically has the structure shown in the partial diagram of the semiconductor device in FIG. 1(α). Gate electrodes 101, 102, 105, and 104 of MOS transistors constituting signal input and signal output elements are all arranged in parallel in the same direction. ．． 10
2,103° 104 is parallel to the component of the direction of ion implantation in the semiconductor substrate direction in the semiconductor device manufacturing process, so that the gate electrode 105 and the drain diffusion layer 106. Overlapping portion of source diffusion layer 107,
That is, the circles 108 and 109 in FIG. 1(b) have the same shape, and the MO8 transistors, which are weak against static electricity among the MOS transistors that constitute the signal input and signal output elements, are (
Become.

In another embodiment, FIG. 3 shows a gate electrode 501.5.
This is a case where the shape of 02.50'5 is not uniform. The direction of the gate electrode 601 at the intersection of the gate electrode 501 and the diffusion portion 304 and the direction of the gate electrode 602 and the diffusion portion 6
The directions of the gate electrode 302 at the intersection of 05 and the gate electrode 605 at the intersection of the gate electrode 605 and the diffusion portion 306 are the same and parallel. In this embodiment as well, the component of the direction of ion implantation in the semiconductor device manufacturing process toward the surface of the semiconductor substrate is approximately parallel to the direction of the gate electrode at the intersection of the gate electrode and the diffusion portion. As a result, it is possible to obtain the same structure as in Figure 1 Ch). [Effects of the Invention] According to the semiconductor device of the present invention described above, the gate electrode of the MOS transistor constituting the signal input and signal output elements is By arranging them all in parallel in the same direction, there is an effect of stabilizing the resistance to static electricity.

[Brief explanation of the drawing]

FIGS. 1(α) and 1(b) are a partial top view of the semiconductor device of the present invention and a sectional view of a MOS transistor constituting a signal input and signal output element. FIGS. 2(α) and 2(b) are a partial top view of a conventional semiconductor device and a cross-sectional view of a MOS transistor constituting a signal input and signal output element. FIG. 3 is a partial top view of a semiconductor device as another embodiment of the present invention. 101--Gate electrode 102--Gate electrode 103--Gate electrode 104--Gate electrode 1 o s --- Gate Electrode 106 ・------・−・Drain diffusion layer 107 ・
・・・・・・・Source diffusion layer i o s−・・・・
-Circle 109 indicating the boundary between the gate electrode and drain diffusion layer---Circle 201 indicating the boundary between the gate electrode and source diffusion layer---Gate electrode 202--- ---- Gate electrode 206 --- Gate electrode 204 --- Gate electrode 206 --- Drain diffusion layer 207 --- Source diffusion layer 208 ・...Circle 209 indicating the boundary between the gate electrode and drain diffusion layer --- Circle 301 indicating the boundary between the gate electrode and source diffusion layer --- Gate electrode 502 --- ---Gate electrode 505--Gate electrode 4--Diffusion layer 5--Diffusion layer--Diffusion layer-- Diffusion layer No. 11/'l Silver) 11 ■ (C) or more

Claims (1)

[Claims] 1. A semiconductor device having a MOS transistor structure for signal input and signal output elements, wherein gate electrodes of the MOS transistors constituting the signal input and signal output elements are all arranged in parallel in the same direction.