JPH0442851A - Production of lead germanate thin film - Google Patents

Production of lead germanate thin film

Info

Publication number
JPH0442851A
JPH0442851A JP2147250A JP14725090A JPH0442851A JP H0442851 A JPH0442851 A JP H0442851A JP 2147250 A JP2147250 A JP 2147250A JP 14725090 A JP14725090 A JP 14725090A JP H0442851 A JPH0442851 A JP H0442851A
Authority
JP
Japan
Prior art keywords
thin film
lead
alkoxide
lead germanate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2147250A
Other languages
Japanese (ja)
Inventor
Minoru Saga
佐賀 実
Toshio Sugano
俊雄 菅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Technical Research and Development Institute of Japan Defence Agency
Original Assignee
Japan Steel Works Ltd
Technical Research and Development Institute of Japan Defence Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd, Technical Research and Development Institute of Japan Defence Agency filed Critical Japan Steel Works Ltd
Priority to JP2147250A priority Critical patent/JPH0442851A/en
Publication of JPH0442851A publication Critical patent/JPH0442851A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To directly obtain a thin film of lead germanate by the use of a simple device in a short time by using Pb-alkoxide and Ge-alkoxide as raw materials and forming a thin film of lead germanate with a spray-pyrolytic method. CONSTITUTION:A thin film of lead germanate is formed by a spray-pyrolytic method using alkoxide of lead and alkoxide of germanium as raw materials. The producing method of said thin film of lead germanate is an extremely economical one as a thin film-forming technique, capable of forming a thin film of lead germanate having pyroelectric properties by burning for a short time by the use of an industrially simple device such as a spraying device and an electric furnace. Furthermore, although an inorganic acid, an organic acid and an inorganic metallic salt, etc., is exemplified as a starting raw material in a spray pyrolytic method, highly purified metal alkoxide belonging to an organic metallic salt is readily obtained and has many excellent properties in contrast to other metallic salts such as those capable of film-forming at low temperatures.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、赤外線検出材料であるゲルマン酸鉛薄膜の製
造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for producing a lead germanate thin film, which is an infrared detection material.

(従来の技術) 一般に赤外線検出材料として代表的なものにはCdHg
Te 、 InSb及びSi等の半導体とチタン酸鉛、
ゲルマン酸鉛、TにS、 PVF2等の焦電体とがある
。前者は液体窒素で冷却して用いる必要があり、後者は
冷却する必要がない。従って、焦電体を用いた非冷却型
の赤外線検出器は冷却型に比べて性能面ではやや劣るも
のの、低価格、小型軽量及び扱い易い等の特徴があり、
人体検知器や火災報知器等に利用されており、今後ます
ます利用範囲が広がる傾向にある。ゲルマン酸鉛は、数
々ある焦電材料のなかで、比較的融点が低く、高怒度な
赤外線検出材料として有望なものである。
(Prior art) In general, CdHg is a typical infrared detection material.
Semiconductors such as Te, InSb and Si and lead titanate,
There are pyroelectric materials such as lead germanate, T, S, and PVF2. The former requires cooling with liquid nitrogen, while the latter does not require cooling. Therefore, although uncooled infrared detectors using pyroelectric materials are slightly inferior in performance to cooled infrared detectors, they have features such as low cost, small size, light weight, and easy handling.
It is used in human body detectors, fire alarms, etc., and its range of use is likely to expand further in the future. Among the many pyroelectric materials, lead germanate has a relatively low melting point and is promising as a high-intensity infrared detection material.

従来、ゲルマン酸鉛はスクリーン印刷法により厚膜が製
造されているが、薄膜を直接製造した例は見当たらない
。従って、これまで、ゲルマン酸鉛薄膜はゲルマニュー
ム及び鉛の各酸化物を混合・焼結し得られた素材を研摩
することにより作られてきた。しかし、一般にセラミッ
クスはもろく、この方法ではほぼ30μ論程度が厚さの
限界であると共に加工工程でのひび割れも多く、大きな
面積の素材を得るのが困難であり、生産コストが高くな
るという問題がある。
Conventionally, thick films of lead germanate have been produced by screen printing, but there have been no examples of direct production of thin films. Therefore, until now, lead germanate thin films have been made by mixing and sintering germanium and lead oxides and polishing the resulting material. However, ceramics are generally brittle, and this method has the problem that the thickness limit is approximately 30 μm, and there are also many cracks during the processing process, making it difficult to obtain material with a large area and increasing production costs. be.

(発明が解決しようとする課題) 従来のゲルマン酸鉛の製造方法では直接薄膜を製造する
適当な方法が見当たらない。
(Problems to be Solved by the Invention) In conventional methods for producing lead germanate, no suitable method for directly producing a thin film has been found.

本発明は、上記のような問題点を解消するためになされ
たもので、簡単な装置を用い、短時間で、ゲルマン酸鉛
の薄膜を直接得ることが可能なゲルマン酸鉛薄膜の製造
方法を提供することを目的とする。
The present invention has been made to solve the above-mentioned problems, and provides a method for producing a lead germanate thin film that can directly obtain a lead germanate thin film using a simple device and in a short time. The purpose is to provide.

(課題を解決するための手段) 本発明では、原料に鉛のアルコキシドとゲルマニューム
のアルコキシドとを用い、スプレーパイロリシス法によ
りゲルマン酸鉛薄膜を製造する。
(Means for Solving the Problems) In the present invention, a lead germanate thin film is manufactured by a spray pyrolysis method using lead alkoxide and germanium alkoxide as raw materials.

本発明におけるスプレーパイロリシス法によるゲルマン
酸鉛薄膜の製造手順は次のようになる。
The procedure for producing a lead germanate thin film by the spray pyrolysis method in the present invention is as follows.

まず、出発原料としてアルコキシド及びゲルマニューム
のアルコキシドを用い、各成分の金属アルコキシドを所
定の成分比に混合する0次に、混合した原料溶液を加熱
した基板上に吹き付は非晶質焦電体薄膜を形成する。そ
の後、電気炉等を用いて熱処理を加えて無電体薄膜を得
る。
First, alkoxide and germanium alkoxide are used as starting materials, and the metal alkoxides of each component are mixed in a predetermined component ratio.Next, the mixed raw material solution is sprayed onto a heated substrate to form an amorphous pyroelectric thin film. form. Thereafter, a heat treatment is performed using an electric furnace or the like to obtain an electrically inert thin film.

(作用) 上述のように、本発明では、原料として溶液を使用する
ため、(1)各成分が原子レベルで混合し均一な膜が得
られる。(2)Mlli成が仕込の成分比を調整するだ
けで簡単に制御できる。(3)平板状の基板のみならず
、多様な形状の基板を用いることにより、自由なパター
ン形成が可能である。
(Function) As described above, in the present invention, since a solution is used as a raw material, (1) each component is mixed at the atomic level and a uniform film can be obtained. (2) Mlli composition can be easily controlled by simply adjusting the ingredient ratio of the ingredients. (3) Free pattern formation is possible by using not only flat substrates but also substrates of various shapes.

(4)膜厚は吹き付けの回数と原料溶液の濃度を調整す
ることによって任意に設定することができる等の利点が
ある。
(4) There is an advantage that the film thickness can be arbitrarily set by adjusting the number of times of spraying and the concentration of the raw material solution.

また、工業的には吹き付は装置と電気炉などの簡単な装
置により短時間の焼成で焦電特性をもつゲルマン酸鉛薄
膜の成膜が可能となり、極めて経済性の高い薄膜作製技
術である。
In addition, from an industrial perspective, spraying is an extremely economical thin film fabrication technology that enables the formation of lead germanate thin films with pyroelectric properties in a short firing time using simple equipment such as equipment and electric furnaces. .

さらに、スプレーパイロリシス法における出発原料とし
ては無機酸、有機酸、無機金属塩及び有機金属塩などが
あるが、これらの中で有機金属塩に含まれる金属アルコ
キシドは、高純度のものが得やすく、低温での成膜が可
能であるなど他の金属塩に比べて優れた点が多い。
Furthermore, the starting materials for the spray pyrolysis method include inorganic acids, organic acids, inorganic metal salts, and organic metal salts, but among these, the metal alkoxides contained in the organic metal salts are easily obtainable with high purity. It has many advantages over other metal salts, such as the ability to form films at low temperatures.

(発明の実施例) 第1図に本発明におけるゲルマン酸鉛薄膜の製造工程の
フローチャートを示す、以下順を追って本発明の詳細な
説明する。
(Embodiments of the Invention) FIG. 1 shows a flowchart of the manufacturing process of a lead germanate thin film according to the present invention, and the present invention will be described in detail below in order.

tず、混合工程1において各成分の金属アルコキシドを
所定の成分比に混合する。具体的には、金属アルコキシ
ドとして、ジ−イソ−プロポキシ鉛(Pb(0−i−C
Jt)z)とテトラ−イソ−プロポキシゲルマニューム
(Ge(0−i−CJt)<)を用いる。なお、ジ−イ
ソ−プロポキシ鉛は室温では固体のため、エタノールを
溶媒としたジ−イソ−プロポキシ鉛のエタノール溶液を
用いる。これらの溶液をpbとGeのモル比が5−3の
化学量論的組成比になるように秤量し混合する。
First, in the mixing step 1, the metal alkoxides of each component are mixed in a predetermined component ratio. Specifically, as the metal alkoxide, di-iso-propoxy lead (Pb(0-i-C
Jt)z) and tetra-iso-propoxygermanium (Ge(0-i-CJt)<). Note that since di-iso-propoxy lead is solid at room temperature, an ethanol solution of di-iso-propoxy lead using ethanol as a solvent is used. These solutions are weighed and mixed so that the molar ratio of pb to Ge becomes a stoichiometric composition ratio of 5-3.

次に、スプレー工程2において混合溶液を基板に吹き付
は塗布する。吹き付けにはハンドスプレーを用い、大気
中で50℃に加熱したアルミナ基板上に1回当たり0.
5μ−程度堆積させ、乾燥工程3にて乾燥させる。これ
らの工程2,3は所定の膜厚になるまで繰り返す0次に
、焼成工程4において、この塗布した基板を電気炉を用
いて大気中で約690〜710℃の範囲内の特定温度で
、10分乃至30分間加熱・焼成する。この結果、結晶
のC軸(基板面に垂直)に強く配向した焦電特性をもつ
六方晶構造のゲルマン酸鉛薄膜を得ることができる。
Next, in a spraying step 2, the mixed solution is sprayed onto the substrate. A hand sprayer was used for spraying, and 0.0.
It is deposited on the order of 5 μm and dried in the drying step 3. These steps 2 and 3 are repeated until a predetermined film thickness is achieved.Next, in the firing step 4, the coated substrate is heated in the air at a specific temperature within the range of about 690 to 710°C using an electric furnace. Heat and bake for 10 to 30 minutes. As a result, it is possible to obtain a lead germanate thin film having a hexagonal crystal structure and having pyroelectric properties strongly oriented along the C axis of the crystal (perpendicular to the substrate surface).

なお、焼成温度が約690〜710℃の範囲外であると
、結晶化できず不適当である。
It should be noted that if the firing temperature is outside the range of about 690 to 710°C, crystallization will not be possible and it is inappropriate.

また、基板はアルミナ以外の耐熱材を採用することもで
きる。
Furthermore, the substrate can also be made of a heat-resistant material other than alumina.

(発明の効果) 以上のように、本発明のゲルマン酸鉛の製造方法によれ
ば、出発材料に各成分の金属アルコキシドを用い、かつ
スプレーパイロリシス法を採用したので、製造装置が簡
単であり、がっ短時間でゲルマン酸鉛薄膜が得られる効
果がある。
(Effects of the Invention) As described above, according to the method for producing lead germanate of the present invention, the metal alkoxides of each component are used as starting materials and the spray pyrolysis method is adopted, so the production equipment is simple. This method has the effect of producing a lead germanate thin film in a short time.

【図面の簡単な説明】[Brief explanation of drawings]

第り図は本発明の一実施例に係わるゲルマン酸鉛薄膜の
作製フローチャートである。 1・・・混合工程、2・・・スプレー工程、3・・・乾
燥工程、4・・・焼成工程。
FIG. 3 is a flowchart for producing a lead germanate thin film according to an embodiment of the present invention. 1... Mixing process, 2... Spraying process, 3... Drying process, 4... Baking process.

Claims (1)

【特許請求の範囲】[Claims] (1)原料として鉛のアルコキシドとゲルマニュームの
アルコキシドとを用い、スプレーパイロリシス法により
ゲルマン酸鉛薄膜を作成することを特徴とするゲルマン
酸鉛薄膜の製造方法。
(1) A method for producing a lead germanate thin film, which comprises creating a lead germanate thin film by a spray pyrolysis method using lead alkoxide and germanium alkoxide as raw materials.
JP2147250A 1990-06-07 1990-06-07 Production of lead germanate thin film Pending JPH0442851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2147250A JPH0442851A (en) 1990-06-07 1990-06-07 Production of lead germanate thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2147250A JPH0442851A (en) 1990-06-07 1990-06-07 Production of lead germanate thin film

Publications (1)

Publication Number Publication Date
JPH0442851A true JPH0442851A (en) 1992-02-13

Family

ID=15425983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2147250A Pending JPH0442851A (en) 1990-06-07 1990-06-07 Production of lead germanate thin film

Country Status (1)

Country Link
JP (1) JPH0442851A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950045A (en) * 1997-06-20 1999-09-07 Sharp Kabushiki Kaisha Input device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939760A (en) * 1982-08-26 1984-03-05 住友金属鉱山株式会社 Method for producing lead germanate-based porcelain thin plate
JPH01173765A (en) * 1987-12-28 1989-07-10 Sharp Corp Superconductor film magnetic sensor
JPH0239478A (en) * 1988-07-28 1990-02-08 Matsushita Electric Ind Co Ltd Method for manufacturing oxide superconductor thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5939760A (en) * 1982-08-26 1984-03-05 住友金属鉱山株式会社 Method for producing lead germanate-based porcelain thin plate
JPH01173765A (en) * 1987-12-28 1989-07-10 Sharp Corp Superconductor film magnetic sensor
JPH0239478A (en) * 1988-07-28 1990-02-08 Matsushita Electric Ind Co Ltd Method for manufacturing oxide superconductor thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950045A (en) * 1997-06-20 1999-09-07 Sharp Kabushiki Kaisha Input device

Similar Documents

Publication Publication Date Title
JPH04259380A (en) Method for controlling crystalline orientation property of pzt ferroelectric body thin film
JPH04341572A (en) Production of thin metal film
JPH0442851A (en) Production of lead germanate thin film
JP3985887B2 (en) Metal oxide precursor solution
JP3586870B2 (en) Oriented thin film forming substrate and method for producing the same
JPS605233B2 (en) Method for manufacturing high melting point compound thin film
JPH0442856A (en) Preparation of lead titanate thin film
Soares-Carvalho et al. Bi4Ti3O12 thin films from mixed bismuth-titanium alkoxides
CN103304232A (en) Preparation method for synthesizing T1-2212 superconducting thin film by employing sol-gel method
KR100529420B1 (en) Process of producing Bismuth Sodium Titanium Oxide compound
RU2165903C1 (en) Method of application of optical coat and device for method embodiment
JP3112578B2 (en) Manufacturing method of crystalline thin film
Parola et al. New sol-gel route for processing of PMN thin films
JPH01138129A (en) Production of oxide superconductor thin film
US3388001A (en) Method of making piezoelectric layers by flame spraying
JPH02220810A (en) Production of oxide superconductor cylinder
JP2789305B2 (en) Manufacturing method of lead germanate
JPH02151098A (en) Manufacture of superconducting thin film
JPH0350196A (en) Single crystal wafer material for forming superconducting ceramic thin film for production of semiconductor element
JPH03131001A (en) Resistance temperature sensor
JPH04106893A (en) Manufacturing method of PTC sheet heating element
JPS63270397A (en) Highly oriented lithium niobate thin film and production thereof
JPH0312312A (en) Production of superconducting thin film
JPS6283390A (en) Manufacture of zirconia coating sintered body
JPH03246977A (en) Manufacture of superconductor wiring based on oxide of bismuth, lead, strontium, calcium and copper