JPH0442969A - Semiconductor device and manufacture thereof - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] Industrial Application Field The present invention is a semiconductor device with high density and easy lamination structure! and its manufacturing method.

BACKGROUND OF THE INVENTION A conventional MO3 type semiconductor device, as shown in FIG.
Source/drain regions 32.3 are formed on the conductive semiconductor substrate 31.
3 was formed, and a gate oxide film 34 and a gate electrode 35 were formed on the semiconductor substrate. Further, as shown in FIG. 7, in order to reduce the capacitance with the substrate, a one-conductivity type semiconductor crystal film 37 is formed on the insulating film 36, and source/drain regions 38 and 39 are formed in this semiconductor crystal film 37. Further, a gate oxide film 40 and a gate electrode 41 were formed on the semiconductor crystal film 37. After that, in any of the above structures, an insulating film is formed over the entire surface, openings are formed on the source/drain regions and the gate electrode, and then a metal wiring layer is formed to form a semiconductor device.

Problems to be Solved by the Invention In this conventional structure, the gate oxide film and gate electrode are formed vertically on the semiconductor substrate or insulating film, so the surface level difference is large and the wiring layer is easily disconnected. . In particular, when configuring a complementary MOS type, after forming an impurity region of an opposite conductivity type on one conductivity type semiconductor substrate, a source/drain, a gate oxide film, and a gate ti#1 are formed on both, and mutual contact is made. Since the gate is connected, the area becomes large, which hinders high density.

The present invention solves the above problem, and by forming a gate oxide film and a gate electrode laterally on a semiconductor substrate or an insulating film, surface steps can be reduced, and in particular,
It is an object of the present invention to provide a semiconductor device suitable for manufacturing a complementary MO3 type semiconductor device and a method for manufacturing the same.

Means for Solving the Problems In order to solve the above problems, a semiconductor device of the present invention has a gate electrode, a gate oxide film, a channel region, and a source/drain region formed laterally on the same insulating film, and Channel regions of the same conductivity type or channel regions of different conductivity types are formed on both sides of the gate electrode.

Further, in the method for manufacturing a semiconductor device of the present invention, a first semiconductor crystal film is formed on an insulating film, a predetermined first pattern is formed thereon, and then a gate oxide film is formed on the entire surface of the first pattern. After forming a second semiconductor crystal film on the entire surface, a predetermined second pattern is formed thereon, and a second semiconductor crystal film is formed in contact with the gate oxide film on both side walls of the first semiconductor crystal pattern. The method includes a step of forming a semiconductor crystal pattern, and a step of selectively implanting impurity ions into the second semiconductor crystal pattern to form a source/drain.

Furthermore, in the manufacturing method of the present invention, a first semiconductor crystal film is formed on the insulating film, a predetermined first pattern is formed thereon, and then a first gate oxide film is formed on the entire surface of the first pattern. forming a second semiconductor crystal film on the entire surface, forming a predetermined second pattern thereon;
forming a second semiconductor crystal pattern in contact with the first gate/oxide film on one side wall of the semiconductor crystal pattern;
Selectively implanting impurity ions into the second semiconductor crystal pattern! - forming source/drain regions;
After forming an insulating film on the entire surface, selectively forming openings,
exposing another sidewall of the first semiconductor crystal pattern; forming a second gate oxide film on the exposed surface; and forming a third gate oxide film of the opposite conductivity type to the first semiconductor crystal pattern over the entire surface. After forming the semiconductor crystal film, a predetermined third pattern is formed within the opening, and a third pattern is formed on the other side wall of the first semiconductor crystal pattern in contact with the second gate oxide film.
and a step of selectively implanting impurity ions into the third semiconductor crystal pattern to form source/drain regions.

Furthermore, the method of the present invention includes a first method formed on an insulating film.
After forming a plurality of predetermined patterns on the semiconductor crystal film,
selectively implanting impurity ions into the plurality of first semiconductor crystal patterns to form source/drain regions; forming a gate oxide film on the surface of the plurality of first semiconductor crystal patterns; A second semiconductor crystal pattern is formed in contact with the plurality of first semiconductor crystal patterns via the gate oxide film to form a tar-electrode.

Operation With the above structure, since the gate electrode Ni-I-oxide film, the channel region, and the source/drain regions are formed on the same plane, there are few steps on the surface, and the wiring layer can be easily formed. Furthermore, since channel regions are formed on both sides of the gate electrode, a plurality of MOS type semiconductor elements can be driven by the same electrode, and a high-density semiconductor device can be formed.

Example An embodiment of the present invention will be described below based on the drawings.

1 and 2 are a sectional view and a plan view illustrating a method of manufacturing a semiconductor device according to a first embodiment of the present invention. In FIG. 1, a first semiconductor crystal film is formed on the second side of an insulating film 1, and a predetermined first pattern 2 is formed thereon to form a gate electrode. Next, a gate oxide film 3 is formed on the sidewalls and surface of the semiconductor crystal film by a thermal oxidation method (FIG. 1(A)).

Next, after forming a second −WA type semiconductor crystal film 4 on the entire surface (FIG. 1(B)), a predetermined second semiconductor crystal film 4 made of the semiconductor crystal film 4 is formed in contact with both side walls of the first pattern 2. A pattern 5 is formed (FIG. 1(C)).

Next, in FIG. 2, the photosensitive resin has a pattern that crosses the first pattern 2, which is the gate electrode, across both the second patterns 5''. I6 is formed 12, and using this photosensitive resin film 6 as a mask for ion implantation, impurity ions of the opposite conductivity type are implanted into a predetermined region of the second pattern 5 made of the second one conductivity type semiconductor crystal film 4 to form a source.・Drain regions 7 and 8 are formed (FIG. 2 fD)). Next, after removing the photosensitive resin film 6, an insulating film is formed on the entire surface, and holes are formed on the gate electrode and the source/drain regions. Section 9 is formed. Furthermore, after forming a metal layer on the entire surface, a predetermined pattern is formed, and a gate electrode wiring layer 10 and source/drain wiring layers 11 and 12 are formed (FIG. 2(E)).
).

3 and 4 are a sectional view and a plan view illustrating a method of manufacturing a semiconductor device according to a second embodiment of the present invention. In FIG. 3, a first semiconductor crystal film is formed on an insulating film 1, and a predetermined first pattern 2 is formed thereon to serve as an electrode for a gate 1. Next, gate oxidation [lI3] is formed on the surface of the first pattern 2, which is the gate electrode, by a thermal oxidation method or the like (FIG. 3(A)). Next, a -S type semiconductor crystal film 4 is formed on the entire surface (FIG. 3(b)), and is connected to one side u2a of the first pattern 2, which is a tar-electrode, via a gate oxide film 3. ! - to form a second pattern 5 made of semiconductor crystal WA4 (FIG. 3(C)).

Next, in FIG. 4, after forming a photosensitive resin film 6 having a pattern that intersects with the first pattern 2 whose gate is the pole, a semiconductor crystal of one conductivity type is formed using this photosensitive resin film 6 as a mask for ion implantation. Impurity ions of the opposite conductivity type are implanted into a predetermined region of the second pattern 5 made of the film 4 to form a source.
A drain region 7.8 is formed (FIG. 4(D)). Next, after removing the photosensitive resin film 6, an insulating film 13 is formed on the entire surface, and furthermore, openings 14 are selectively formed. , expose the other sidewall 2b of the first pattern 2, which is the gate electrode (FIG. 4(E)), and then form a gate oxide film on the exposed sidewall of the gate electrode. After forming the semiconductor crystal film, a first gate tS, which is a sixth-order gate tS, is formed to form a third pattern 15 connected to the side wall of the gate electrode through the gate oxide film at least within the opening 14. A photosensitive resin film 16 having a pattern intersecting with the pattern 2 is formed, and using this photosensitive resin film 6 as a mask for ion implantation, conductivity is applied to a predetermined region of the third pattern 15 made of the opposite conductivity type semiconductor crystal film. Source/drain regions 17 and 18 are formed by implanting impurity ions of a suitable type. (FIG. 4(F)) Next, after removing the photosensitive resin film 16, an insulating film is formed on the entire surface as in the first embodiment, and openings are selectively formed. After forming a metal film on the entire surface, a wiring pattern is formed.

FIG. 5 shows a semiconductor device according to a third embodiment of the present invention! FIG. 2 is a plan view illustrating a manufacturing method. In FIG. 5, a semiconductor crystal film is formed on an insulating film 1, and a predetermined pattern 20 is formed on the semiconductor crystal film.
．． A photosensitive resin film 22 having a pattern intersecting the pattern 20.21 is formed on the 0th order forming the semiconductor crystal film 21, and using this photosensitive resin film 22 as a mask for ion implantation, the pattern 20.21 made of the semiconductor crystal film is formed. Impurity ions are selectively implanted into predetermined regions to form source/drain regions 8 (FIG. 5(A)), and then a photosensitive resin film 2 is formed.
2, the pattern 2 made of the semiconductor crystal film is removed.
A second semiconductor crystal film 24 is formed in contact with both patterns 20 and 21 made of the semiconductor crystal film through the gate oxide film 23 to form a gate electrode. (FIG. 5(B)), then an insulating WA 25 is formed on the entire surface, and as in the first embodiment, openings 9 are selectively formed on the source/drain regions and the gate electrode, A metal wiring layer is selectively formed.

Effects of the Invention As described above, according to the semiconductor device and manufacturing method of the present invention, since the gate electrode/gate oxide film, the channel region, and the source/drain region are formed laterally on the same insulating film, the surface level difference is eliminated. It is easy to connect semiconductor elements, and it is easy to form a laminated structure. Also,
A channel region and a source region are formed on both side walls of the same gate electrode.
Since the drain region is formed, a plurality of elements can be operated with the same gate, and a high-density semiconductor device can be formed. This is particularly advantageous when configuring a complementary MOS type.

[Brief explanation of the drawing]

1 and 2 are structural cross-sectional views and plan views for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention, and FIGS. 3 and 4 are a structural cross-sectional view and a plan view for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention. 5 is a structural cross-sectional view and a plan view for explaining the method of manufacturing a semiconductor device according to the third embodiment of the present invention; FIGS. The figure is a structural cross-sectional view for explaining a conventional method of manufacturing a semiconductor device. 1... Insulating film, 2, 24.・、Gate'r! fh@
, 3 , 23 Medium gate oxide film, 5.15.20.21・
...Semiconductor crystal film, 6°22...Photosensitive resin film, 7.
8.17.18... Source/drain region, 9...
Opening part, 1o... Gate electrode wiring layer, 11, 12...
・Source/drain wiring layer. Agent Yoshihiro Morimoto

Claims (1)

[Claims] 1. A channel region made of a semiconductor crystal, which has a gate oxide film on both sides of a gate electrode formed on an insulating film, and is in contact with both sides of the gate electrode through the gate oxide film, respectively; A semiconductor device having source and drain regions. 2. A channel region and a source/drain region made of a semiconductor crystal of one conductivity type, which have gate oxide films on both sides of a gate electrode formed on an insulating film, and are in contact with one side of the gate electrode via the gate oxide film. and a channel region and a source/drain region made of a semiconductor crystal of an opposite conductivity type and in contact with the other side surface of the gate electrode via the gate oxide film. 3. Form a first semiconductor crystal film on the insulating film, and
After forming a predetermined first pattern, forming a gate oxide film on the entire surface of the first pattern; and after forming a second semiconductor crystal film on the entire surface, forming a predetermined second pattern thereon. a step of forming a second semiconductor crystal pattern in contact with the gate oxide film on both side walls of the first semiconductor crystal pattern; and a step of selectively implanting impurity ions into the second semiconductor crystal pattern to form a source/drain region. A method for manufacturing a semiconductor device, comprising: forming a semiconductor device. 4. After forming a first semiconductor crystal film on the insulating film and forming a predetermined first pattern thereon, forming a first gate oxide film on the entire surface of the first pattern; After forming a second semiconductor crystal film, a predetermined second pattern is formed thereon to form a second semiconductor crystal pattern in contact with the first gate oxide film on one side wall of the first semiconductor crystal pattern. a step of selectively implanting impurity ions into the second semiconductor crystal pattern to form a source/drain region; and a step of selectively forming an opening after forming an insulating film on the entire surface; a step of exposing another sidewall of the first semiconductor crystal pattern; a step of forming a second gate oxide film on the exposed surface; and a step of forming a third semiconductor of a conductivity type opposite to that of the first semiconductor crystal film over the entire surface. After forming the crystal film, a predetermined third pattern is formed therein within the opening, and the third semiconductor crystal pattern is in contact with the second gate oxide film on the other side wall of the first semiconductor crystal pattern. A method for manufacturing a semiconductor device comprising the steps of forming a source/drain region by selectively implanting impurity ions into the third semiconductor crystal pattern. 5. After forming a plurality of predetermined patterns in the first semiconductor crystal film formed on the insulating film, impurity ions are selectively implanted into the plurality of first semiconductor crystal patterns to form a source.
a step of forming a drain region, a step of forming a gate oxide film on the surface of the plurality of first semiconductor crystal patterns, and a step of forming a second semiconductor crystal pattern in contact with the plurality of first semiconductor crystal patterns via the gate oxide film. A method for manufacturing a semiconductor device, comprising: forming a semiconductor crystal pattern to form a gate electrode.