JPH0443435B2 - - Google Patents
Info
- Publication number
- JPH0443435B2 JPH0443435B2 JP11237082A JP11237082A JPH0443435B2 JP H0443435 B2 JPH0443435 B2 JP H0443435B2 JP 11237082 A JP11237082 A JP 11237082A JP 11237082 A JP11237082 A JP 11237082A JP H0443435 B2 JPH0443435 B2 JP H0443435B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- platinum
- electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
＜発明の分野＞
この発明はPZT系やPLZT系の圧電性薄膜用と
しての使用される電極の形成方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION <Field of the Invention> The present invention relates to a method of forming an electrode used for a PZT-based or PLZT-based piezoelectric thin film.
＜従来技術とその問題点＞
従来、圧電性薄膜であるPZTやPLZTなどは電
気的特性を測定するために、白金板上に形成され
ていた。また、モノリシツク素子に応用する目的
をもつて、溶融石英などの表面に基板加熱の状態
でスパツタリングすることによつて形成された、
いわゆる高温スパツタード白金基板上に形成され
ていた。<Prior art and its problems> Conventionally, piezoelectric thin films such as PZT and PLZT have been formed on platinum plates in order to measure their electrical characteristics. In addition, for the purpose of application to monolithic devices, crystals formed by sputtering on the surface of fused silica or the like while the substrate is heated.
It was formed on a so-called high-temperature sputtered platinum substrate.
しかしながら、前者はモノリシツク素子への応
用性に乏しく、また後者は、白金基板の剥離が生
じやすく、PZT系圧電性薄膜との密着性にも欠
けるという問題があつた。 However, the former has poor applicability to monolithic elements, and the latter has problems in that the platinum substrate tends to peel off and it lacks adhesion to the PZT piezoelectric thin film.
＜発明の目的＞
この発明は、従来の方法による欠点を改善し
て、モノリシツク素子への応用範囲が拡大され、
しかも、基板および圧電性薄膜に対する密着性が
良好になるような圧電性薄膜用の電極を形成させ
る方法を提案することを目的としている。<Objective of the invention> The present invention improves the drawbacks of conventional methods, expands the range of application to monolithic devices, and
Moreover, it is an object of the present invention to propose a method for forming an electrode for a piezoelectric thin film that has good adhesion to a substrate and a piezoelectric thin film.
＜発明の構成と効果＞
この発明は、半導体基板上に形成された絶縁性
薄膜の表面に下地としての金属薄膜を形成し、こ
の金属薄膜の表面に白金膜を形成した後、この白
金膜の表面が、結晶粒成長によつて凹凸状となる
温度で熱処理し、さらに、上記白金膜の上に圧電
性薄膜を被着する点に要旨を有するものである。<Structure and Effects of the Invention> In the present invention, a metal thin film is formed as a base on the surface of an insulating thin film formed on a semiconductor substrate, a platinum film is formed on the surface of this metal thin film, and then the platinum film is The gist is that the surface is heat-treated at a temperature at which it becomes uneven due to crystal grain growth, and that a piezoelectric thin film is further applied on the platinum film.
一般に、スパツタリング法や蒸着法などの薄膜
化技術による密着法の良否については、スパツタ
リング法によるのが蒸着法によるものに比べて密
着性が良く、また、絶縁膜上に直接白金膜をスパ
ツタリング法によつて形成したものは、低温スパ
ツタリングによる場合は勿論、高温スパツタリン
グによる場合でも剥離を生じやすい。この点に関
し、この発明では、下地として絶縁性薄膜上に形
成されたチタン薄膜の上に白金膜が形成されるの
で、チタン薄膜と白金膜、およびチタン薄膜と絶
縁性薄膜との各密着状態が良好となり、結局、白
金膜と絶縁性薄膜とが高い密着性を維持する。ま
た、白金膜の形成後は、これを白金膜の表面が、
見かけ上、白濁する程度の温度で熱処理するの
で、白金膜の結晶粒成長に伴なうその表面の凹凸
によつて、圧電性薄膜に対する密着性も向上す
る。加えて、白金膜のスパツタリング時に基板温
度を上昇させる必要がなくなるので、短時間に多
量のスパツタリングを行なうことができ、生産性
の向上につながる。さらに、白金膜は、下地とし
ての金属薄膜を介して絶縁性薄膜上に形成される
ので、。モノリシツク素子への応用範囲が拡大さ
れる。 In general, regarding the adhesion of thin film techniques such as sputtering and vapor deposition, sputtering has better adhesion than vapor deposition. Products formed in this manner are likely to peel off not only when using low-temperature sputtering but also when using high-temperature sputtering. Regarding this point, in the present invention, since the platinum film is formed on the titanium thin film formed on the insulating thin film as a base, the adhesion state between the titanium thin film and the platinum film and between the titanium thin film and the insulating thin film is As a result, the platinum film and the insulating thin film maintain high adhesion. In addition, after forming the platinum film, the surface of the platinum film is
Since the heat treatment is carried out at a temperature that causes the platinum film to appear cloudy, the surface irregularities accompanying crystal grain growth of the platinum film also improve its adhesion to the piezoelectric thin film. In addition, since there is no need to raise the substrate temperature when sputtering a platinum film, a large amount of sputtering can be performed in a short time, leading to improved productivity. Furthermore, since the platinum film is formed on the insulating thin film via the underlying metal thin film. The scope of application to monolithic devices is expanded.
＜実施例の説明＞
この発明の好適な実施例においては、絶縁性薄
膜として二酸化シリコン（SiO2）、下地としての
金属薄膜としてチタン（Ti）あるいはクロム
（Cr）がそれぞれ選ばれ、圧電性薄膜としてPZT
系圧電性薄膜であるチタン酸鉛（PbTiO3）から
なる薄膜が選ばれ、しかも金属薄膜や白金膜が蒸
着法あるいはスパツタリング法などの薄膜化技術
によつて形成される。<Description of Embodiments> In a preferred embodiment of the present invention, silicon dioxide (SiO 2 ) is selected as the insulating thin film, titanium (Ti) or chromium (Cr) is selected as the underlying metal thin film, and the piezoelectric thin film is as PZT
A thin film made of lead titanate (PbTiO 3 ), which is a piezoelectric thin film, is selected, and a metal thin film or a platinum film is formed by a thin film technique such as a vapor deposition method or a sputtering method.
図面は、この発明によつて形成された電極を模
式的に示したものでり、１はシリコンなどからな
る半導体基板、２は二酸化シリコンなどからなる
絶縁性薄膜、３はチタンなどからなる下地として
の金属薄膜、４は白金膜であつて、その表面４ａ
は、熱処理による結晶粒成長によつて凹凸状とな
つている。 The drawing schematically shows an electrode formed according to the present invention, in which 1 is a semiconductor substrate made of silicon or the like, 2 is an insulating thin film made of silicon dioxide or the like, and 3 is a base made of titanium or the like. The metal thin film 4 is a platinum film whose surface 4a
has an uneven shape due to crystal grain growth due to heat treatment.
このような電極を形成するにあたり、まず、シ
リコンなどの半導体基板１の表面に、二酸化シリ
コンなどの絶縁性薄膜２を形成し、つぎに、この
絶縁性薄膜２の表面に、蒸着法によつてチタンな
どの金属薄膜３を下地として100〜200Å程度の厚
さで形成する。この後、電極としての白金膜４
を、基板温度を上げずに、スパツタリング法によ
つて形成し、つづいて、熱処理を施して、白金膜
４の表面を見かけ上白濁させる。この場合の熱処
理温度は白金膜４の膜厚によつても異なるが、膜
厚が800〜1000Åのときには、700〜800℃で一時
間程度行なえば良い。 To form such an electrode, first, an insulating thin film 2 such as silicon dioxide is formed on the surface of a semiconductor substrate 1 such as silicon, and then an insulating thin film 2 such as silicon dioxide is formed on the surface of this insulating thin film 2 by a vapor deposition method. A metal thin film 3 such as titanium is formed as a base to a thickness of about 100 to 200 Å. After this, the platinum film 4 as an electrode
is formed by a sputtering method without raising the substrate temperature, and then heat-treated to make the surface of the platinum film 4 appear cloudy. The heat treatment temperature in this case varies depending on the thickness of the platinum film 4, but when the film thickness is 800 to 1000 Å, the heat treatment may be performed at 700 to 800° C. for about one hour.
ここで、熱処理前における白金膜４の表面は鏡
面であるが、熱処理後においては、図示されるよ
うに表面に凹凸を生じる。したがつて、この白金
膜の上に圧電性薄膜を被着すると、白金膜と圧電
性薄膜との密着性が向上する。 Here, the surface of the platinum film 4 before the heat treatment is a mirror surface, but after the heat treatment, the surface becomes uneven as shown in the figure. Therefore, when a piezoelectric thin film is deposited on this platinum film, the adhesion between the platinum film and the piezoelectric thin film is improved.
なお、上記実施例において、金属薄膜としてク
ロムなどを使用することも可能である。 Note that in the above embodiments, it is also possible to use chromium or the like as the metal thin film.
図面はこの発明によつて形成された電極に構造
を示す模式的な斜視図である。
１……半導体基板、２……絶縁性薄膜、３……
金属薄膜、４……白金膜、４ａ……白金膜表面。
The drawing is a schematic perspective view showing the structure of an electrode formed according to the present invention. 1... Semiconductor substrate, 2... Insulating thin film, 3...
Metal thin film, 4...Platinum film, 4a...Platinum film surface.
Claims (1)
膜用の電極形成方法において、半導体基板上に形
成された絶縁性薄膜の表面に下地としての金属薄
膜を形成し、この金属薄膜の表面に白金膜を形成
した後、この白金膜の表面が、結晶粒成長によつ
て凹凸状となる温度で熱処理する圧電性薄膜用の
電極形成方法。 ２ 半導体基板がシリコンであり、絶縁性薄膜が
二酸化シリコンであり、下地としての金属薄膜が
チタンあるいはクロムである特許請求の範囲第１
項記載の圧電性薄膜用の電極形成方法。 ３ 金属薄膜および白金膜を蒸着法あるいはスパ
ツタリング法などの薄膜化技術によつて形成する
特許請求の範囲第１項または第２項記載の圧電性
薄膜用の電極形成方法。 ４ 圧電性薄膜がチタン酸鉛からなる薄膜である
特許請求の範囲第１項、第２項または第３項記載
の圧電性薄膜用の電極形成方法。[Claims] 1. In a method for forming an electrode for a piezoelectric thin film in which a piezoelectric thin film is deposited on a platinum film, a metal thin film is formed as a base on the surface of an insulating thin film formed on a semiconductor substrate. A method for forming an electrode for a piezoelectric thin film, in which a platinum film is formed on the surface of the metal thin film, and then heat-treated at a temperature at which the surface of the platinum film becomes uneven due to crystal grain growth. 2. Claim 1 in which the semiconductor substrate is silicon, the insulating thin film is silicon dioxide, and the underlying metal thin film is titanium or chromium.
A method for forming an electrode for a piezoelectric thin film as described in . 3. A method for forming an electrode for a piezoelectric thin film according to claim 1 or 2, wherein the metal thin film and the platinum film are formed by a thin film forming technique such as a vapor deposition method or a sputtering method. 4. The method for forming an electrode for a piezoelectric thin film according to claim 1, 2 or 3, wherein the piezoelectric thin film is a thin film made of lead titanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112370A JPS592386A (en) | 1982-06-28 | 1982-06-28 | Forming method for electrode for piezoelectric thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112370A JPS592386A (en) | 1982-06-28 | 1982-06-28 | Forming method for electrode for piezoelectric thin-film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS592386A JPS592386A (en) | 1984-01-07 |
| JPH0443435B2 true JPH0443435B2 (en) | 1992-07-16 |
Family
ID=14584985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57112370A Granted JPS592386A (en) | 1982-06-28 | 1982-06-28 | Forming method for electrode for piezoelectric thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS592386A (en) |
-
1982
- 1982-06-28 JP JP57112370A patent/JPS592386A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS592386A (en) | 1984-01-07 |
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