JPH0444216A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a thick resist film even from a resist liquid having a relatively low viscosity and to prevent the occurrence of an unevenly applied part by bubbles by applying the resist liquid in a state where the ambient environment of a semiconductor substrate is set to an inert gas atmosphere of a high- temperature within a fixed range. CONSTITUTION:A semiconductor substrate (2) is set on a chucking table (5) in a sealed coater cup (4). After setting the substrate (2), inside of the cup (4) is set to a high-temperature inert gas atmosphere by injecting an inert gas, such as N2, Ar gas, heated to a prescribed high temperature into the cup (4) from a gas pipe (6) connected with the cup (4). Then a resist film having a uniform thickness is formed on the substrate (2) by dropping resist liquid onto the substrate (2) from a resist dropping nozzle (1) while rotating the substrate (2) by means of a spin motor (3). Since the vaporizing speed of the solvent contained in the resist liquid can be decreased at the time of application by setting the ambient environment of the substrate (2) to the inert gas atmosphere of a high temperature of 30-80 deg.C, a thick resist film thickness can be obtained even from a resist liquid having a relatively low viscosity.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to an improvement in a technique for applying a resist liquid onto a semiconductor substrate.

[Conventional technology]

Conventionally, when applying a resist solution onto a semiconductor substrate, the environment around the semiconductor substrate is the same as the atmosphere inside the room in which the device is placed.

[Problem to be solved by the invention]

Normally, when manufacturing a semiconductor, there are approximately 10 steps for applying a resist solution, and there are generally two to three types of conditions regarding the resist film thickness.

By the way, in order to obtain a desired resist film thickness, it is necessary to obtain each resist film thickness by changing the viscosity of the resist solution, and in order to obtain a particularly thick resist film, a high viscosity resist solution is required. Ta. However, a highly viscous resist solution tends to generate bubbles, and these bubbles cause uneven coating when the resist solution is applied.

The present invention is intended to solve the problems of the conventional semiconductor device manufacturing method, and its purpose is to develop a semiconductor device manufacturing method that can obtain a thick resist film using a simpler method. It's there to provide.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention is characterized in that when applying the resist liquid, the environment around the semiconductor substrate is brought into an inert gas atmosphere at a temperature of 303° C. to 80° C., and the resist liquid is applied.

〔Example〕

FIGS. 1(1) to 1(6) are cross-sectional views of a semiconductor device in an embodiment of the present invention.

A semiconductor substrate (2) is set on a chucking table (5) in a sealed coater cup (4). After that, inert gas such as N2 or Ar gas heated to a predetermined temperature is injected from the gas pipe (6) connected to the coater cup (4) to create a high-temperature inert gas atmosphere inside the coater cup (4). Next, the resist solution is dripped onto the semiconductor substrate (2) from the resist dripping nozzle (1), and the semiconductor substrate (2) is rotated by the spin motor (3) to form a uniform resist film on the semiconductor substrate (2). form.

By the way, the factors that determine the resist film thickness are the viscosity of the resist solution, the rotation speed of the semiconductor substrate after dropping the resist solution,
There are three possible reasons: the rate at which the solvent evaporates from the resist during rotation; Figure 2 (1) to (3), (5), (1
4) is a sectional view of a semiconductor device manufactured by a conventional method. To briefly explain the conventional method, first, a semiconductor substrate (2) is set on a chucking table (5) in a coater cup (14) that is not particularly sealed, and then the resist is dropped from the zero-order resist dripping nozzle (1). The resist solution is dropped onto the semiconductor substrate (2), and the semiconductor substrate (
2) to form a uniform resist film on the semiconductor substrate (2). In the conventional method, the inside of the coater cup is always maintained at the same atmosphere as the room in which the apparatus is placed. Therefore, the evaporation rate of the solvent from the resist during resist coating is always kept constant. Furthermore, regarding the rotation speed, at low speeds the in-plane uniformity of the resist film thickness deteriorates, and at high speeds there is a limit to the ability of the spin motor, so the practical range is approximately 3000 to 6000 rpm; It was not possible to change the film thickness significantly within this speed. Therefore, conventionally, a thick resist film has been formed by increasing the viscosity of the resist solution.

According to the present invention, the solvent evaporation rate during resist application can be increased by creating a high temperature inert gas atmosphere in the range of 301C to 80°C around the semiconductor substrate (2) during resist application. In addition, a thick resist film can be obtained using a relatively low viscosity resist solution.

〔Effect of the invention〕

As described above, according to the present invention, the rate of solvent evaporation from the resist can be increased by setting the atmosphere in the coater cup during resist coating to a high-temperature inert gas atmosphere in the range of 30°C to 80°C. Therefore, a thick resist film can be formed even with a relatively low viscosity resist solution, uneven coating due to air bubbles can be prevented, and a high quality resist film without uneven coating can be formed.

λ diagram

[Brief explanation of drawings]

FIG. 1 is a sectional view of a semiconductor device according to the present invention. FIG. 2 is a sectional view of a conventional semiconductor device. The first cause that's all

Claims (1)

[Claims] A semiconductor device characterized in that when applying a resist liquid onto the surface of a semiconductor substrate, the environment around the semiconductor substrate is brought into a high-temperature inert gas atmosphere in the range of 30°C to 80°C, and the resist liquid is applied. Production method.