JPH0444214A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a thin resist film without using any low-viscosity resist liquid by applying the resist liquid while a semiconductor substrate is maintained in a low-temperature state within a fixed range. CONSTITUTION:A semiconductor substrate 2 is set on a temperature-controlled chucking table 5 in a coater cup 4. At the time of setting the substrate 2, the table 5 is cooled in advance to a prescribed low temperature. Then a resist film having a uniform thickness is formed on the substrate 2 by rotating the substrate 2 by means of a spin motor 3 while a resist liquid is dropped onto the substrate 2 from a resist dropping nozzle 1. Since the vaporizing speed of the solvent contained in the resist liquid can be decreased at the time of applying the resist liquid by cooling the semiconductor substrate to a low- temperature of 0-20 deg.C, a thin resist film can be obtained even from a resist film having a relatively high viscosity.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to an improvement in a technique for applying a resist liquid onto a semiconductor substrate.

[Conventional technology]

Conventionally, when applying a resist solution onto a semiconductor substrate, the semiconductor substrate is maintained at the same temperature as the room in which the device is placed.

In other words, FIGS. 1 to 4.15 are cross-sectional views of semiconductor devices manufactured by conventional methods. A simple explanation of the conventional method is
First, the semiconductor substrate 2 is set on the chucking table 15 which is not particularly temperature controlled in the coater cup 4. Next, the resist solution is dripped onto the semiconductor substrate 2 from the resist dripping nozzle l, and the semiconductor substrate is 2 to form a uniform resist film on the semiconductor substrate 2.

[Problem to be solved by the invention]

Normally, when manufacturing semiconductors, there are around 10 steps to apply resist solution, and the resist film thickness is 2 to 3 times.
Generally, there are 81g4 conditions. By the way, in order to obtain a desired resist film thickness, it is necessary to obtain each resist film thickness by changing the viscosity of the resist solution, and in order to obtain a particularly thin resist film thickness, a resist solution with a low viscosity is required. there were.

However, when using a low-viscosity resist solution, it is difficult to prevent the resist solution from dripping inside the nozzle on a bond coated with the resist solution through a nozzle, and when the resist solution occurs, the coating becomes uneven.

The present invention solves the problems of the conventional semiconductor device manufacturing method, and its purpose is to provide a semiconductor device in which a thin resist film can be obtained without using a low viscosity resist solution. The purpose is to provide a manufacturing method.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention is characterized in that when applying the resist solution, the semiconductor substrate is maintained at a low temperature in the range of O'C to 20#C and the resist solution is applied.

〔Example〕

1 to 5 are cross-sectional views of a semiconductor device according to an embodiment of the present invention.

The semiconductor substrate 2 is set on the temperature-controlled chucking table 5 in the coater cup 4. At this time, the chucking table 5 is preset at a predetermined low temperature 6.
Next, the resist solution is dropped onto the semiconductor substrate 2 from the resist dropping nozzle 1, and the spin motor 3 is used to drop the resist solution onto the semiconductor substrate 2.
is rotated to form a uniform resist film on the semiconductor substrate 2.

By the way, factors that increase the resist film thickness include the viscosity of the resist solution, the rotation speed of the semiconductor substrate after dropping the resist solution,
There are three possible rates of evaporation of solvent from the resist during rotation. FIGS. 2 1 to 4.15 are cross-sectional views of semiconductor devices manufactured by the conventional method. Since the chucking table 15 does not have a temperature control function, the chucking table 15 is always at the same temperature as the room temperature. For this reason, the rate of evaporation of the solvent from the resist during resist coating always remains constant. Furthermore, regarding the rotation speed, the in-plane uniformity of the resist film thickness deteriorates at low speeds, and there is a limit to the ability of the spin motor 3 at high speeds, so 3000 to 6000 rotations/min is the practical range. , it was not possible to significantly change the film thickness within this rotational speed. Therefore, conventionally, a thin resist film has been formed by lowering the viscosity of a resist solution.

According to the present invention, the semiconductor substrate 2 is heated to 0° C. during resist application.
By keeping the temperature at a low temperature in the range of ~20°C, the rate of solvent evaporation from the resist during resist application can be reduced, so a relatively high viscosity resist solution is used.
A thin resist film can be obtained.

〔Effect of the invention〕

As described above, according to the present invention, by keeping the semiconductor substrate at a low temperature in the range of 0°C to 20''C during resist application, the rate of solvent evaporation from the resist can be suppressed to a low level. It is possible to form a thin resist film even with a resist solution of high viscosity, completely prevent liquid dripping inside the nozzle, and form a high-quality resist film without uneven coating.

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[Brief explanation of drawings]

FIG. 1 is a sectional view of a semiconductor device according to the present invention. FIG. 2 is a sectional view of a conventional semiconductor device. that's all Applicant: Seiko Epson Corporation 1 company The first cause

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device, which comprises: applying a resist solution onto a surface of a semiconductor substrate while maintaining the semiconductor substrate at a low temperature in the range of 0° C. to 20° C.