JPH0444212A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a thick resist film thickness by a simpler method by maintaining a semiconductor substrate at a high temperature within a fixed range when a resist liquid is applied to the surface of the semiconductor substrate. CONSTITUTION:A semiconductor substrate 2 is set on a temperature-controlled chucking table 5 in a coater cup 4. At the time of setting the substrate 2, the table 5 is heated to a prescribed high temperature in advance and, thereafter, a resist film having a uniform thickness is formed on the substrate 2 by rotating the substrate by means of a spine motor 3 while a resist liquid are dropped onto the substrate 2 from a resist dropping nozzle 1. Since the vaporizing speed of the solvent contained in the resist can be increased at the time of applying the resist liquid by preheating the substrate 2 to 30-80 deg.C, a thick resist film can be formed even from a resist liquid having a relatively low viscosity.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to an improvement in a technique for applying a cyst liquid onto a semiconductor substrate.

[Conventional technology]

Conventionally, when applying a resist solution onto a semiconductor substrate, the temperature of the semiconductor substrate is the same as the temperature of the room in which the device is placed.

In other words, FIGS. 1 to 4.15 are cross-sectional views of semiconductor devices manufactured by conventional methods. A simple explanation of the conventional method is
First, the semiconductor substrate 2 is set on the chucking table 15 in which the temperature is not particularly controlled in the coater cup 4. Next, the resist solution is dripped onto the semiconductor substrate 2 from the resist dripping nozzle 1, and the semiconductor substrate is 2 to form a uniform resist film on the semiconductor substrate 2.

In the conventional method, the inside of the coater cup is not sealed, so the environment around the semiconductor substrate 2 is always maintained at atmospheric pressure.

[Problem to be solved by the invention]

Normally, when manufacturing semiconductors, the process of applying resist liquid is around 10 steps, and the resist film thickness is about 2 to 3 times.
Generally, there are various types of conditions. By the way, in order to obtain the desired resist film thickness, it is necessary to obtain each resist film thickness by changing the viscosity of the resist solution, and in order to obtain a particularly thick resist film, a high viscosity resist solution is indispensable. Ta. However, there is a problem in that a highly viscous resist solution tends to generate bubbles, and these bubbles tend to cause uneven coating when the resist solution is applied.

The present invention is intended to solve the problems of the conventional semiconductor device manufacturing method, and its purpose is to develop a semiconductor device manufacturing method that can obtain a thick resist film using a simpler method. It's there to provide.

C! Means for Solving l'wi] In the method for manufacturing a semiconductor device according to the present invention, when applying a resist liquid, the semiconductor 1 & board are held at a high temperature in the range of 80°C from 3°C to apply the resist liquid. It is characterized by

〔Example〕

1 to 5 are cross-sectional views of a semiconductor device according to an embodiment of the present invention. Two semiconductor substrates 2 are set on a temperature-controlled chucking table 5 in a coater cup 4. At this time, the temperature-controlled chucking table 5 is set to a predetermined high temperature #f.
After that, the resist solution is dropped onto the semiconductor substrate 2 from the resist dropping nozzle 1, and the semiconductor substrate 2 is rotated by the spin motor 3.
A uniform resist film is formed thereon.

By the way, the factors that determine the resist film thickness are the viscosity of the resist solution, the rotation speed of the semiconductor substrate after dropping the resist solution,
There are three possible evaporation rates at which the solvent evaporates from the resist during rotation. 2.1 to 4.15 are cross-sectional views of semiconductor devices according to the conventional method.
5 does not have a temperature control function, so the chucking table 15 was always at the same temperature as the room temperature. For this reason, the rate of evaporation of the solvent from the resist during resist coating always remains constant. Furthermore, regarding the rotation speed, at low speeds the in-plane uniformity of the resist film thickness deteriorates, and at high speeds there is a limit to the ability of the spin motor 3;
The practical range is from 00 rotations to 6000 rotations/min, and it was not possible to change the film thickness significantly within this rotation speed. Therefore, conventionally, a thick resist film has been formed by increasing the viscosity of the resist solution.

According to the present invention, when applying the resist, the semiconductor substrate 2 is
By using a high temperature condition in the range of @C to 80℃, the rate of solvent evaporation from the resist during resist coating can be increased, so a relatively low viscosity resist solution can be used to form a thick resist film. be able to.

〔Effect of the invention〕

As described above, according to the present invention, the rate of solvent evaporation from the resist can be increased by holding the semiconductor substrate at a high temperature during resist application, so even a relatively low viscosity resist solution can form a thick resist film. It is possible to prevent uneven coating due to air bubbles, and to form a high-quality resist film without uneven coating.

Figure 1

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a semiconductor device according to the present invention. Figure W42 is a cross-sectional view of a conventional semiconductor 141. Meyomoon

Claims (1)

[Claims] 1. A method of manufacturing a semiconductor device, which comprises applying a resist solution onto a surface of a semiconductor substrate, the semiconductor substrate being maintained at a high temperature in the range of 30° C. to 80° C.