JPH0444362U - - Google Patents
Info
- Publication number
- JPH0444362U JPH0444362U JP8638890U JP8638890U JPH0444362U JP H0444362 U JPH0444362 U JP H0444362U JP 8638890 U JP8638890 U JP 8638890U JP 8638890 U JP8638890 U JP 8638890U JP H0444362 U JPH0444362 U JP H0444362U
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- inner tube
- tube
- annular portion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000178 monomer Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は、本考案に係る長尺基体のプラズマ処
理装置の図解図、第２図は、本考案に係る長尺基
体のプラズマ処理装置により長尺基体のプラズマ
重合膜の被着処理を行つた場合の内管の出口近傍
の磁場強度と製膜速度との関係を示す相関図、第
３図は、本考案に係る長尺基体のプラズマ処理装
置に対して比較される長尺基体のプラズマ処理装
置の図解図である。
１……本考案に係る長尺基体のプラズマ処理装
置、２Ａ……外管、２Ｂ……内管、３……長尺基
体、４Ａ，４Ｂ……永久磁石、５……モノマー気
体源、６……非重合性気体源、７……真空排気装
置、８……巻取りローラ、９……送り出しローラ
、１０……真空チヤンバー、１１……ＲＦ電源、
１２……放電誘導コイル、１３……環状部、１４
……モノマー気体導入管、１５……非重合性気体
導入管。
FIG. 1 is an illustrative diagram of a plasma processing apparatus for long substrates according to the present invention, and FIG. 2 is a diagram showing a plasma polymerized film coating process on a long substrate using the plasma processing apparatus for long substrates according to the present invention. FIG. 3 is a correlation diagram showing the relationship between the magnetic field strength near the outlet of the inner tube and the film forming speed when It is an illustrative view of a processing device. DESCRIPTION OF SYMBOLS 1... Plasma processing apparatus for a long substrate according to the present invention, 2A... Outer tube, 2B... Inner tube, 3... Long substrate, 4A, 4B... Permanent magnet, 5... Monomer gas source, 6 ... Non-polymerizable gas source, 7 ... Vacuum exhaust device, 8 ... Take-up roller, 9 ... Delivery roller, 10 ... Vacuum chamber, 11 ... RF power supply,
12... Discharge induction coil, 13... Annular part, 14
... Monomer gas introduction tube, 15... Non-polymerizable gas introduction tube.
Claims (1)
せる長尺基体のプラズマ処理装置において、絶縁
体からなる管壁を有し、管壁の外側には放電プラ
ズマ発生装置が設けられた外管２Ａと、前記外管
２Ａの内側にほぼ同軸状に配置され、絶縁体から
なる管壁を有する内管２Ｂと、前記内管２Ｂの内
側でほぼその長手方向軸に平行に前記長尺基体を
走行させる走行手段と、前記長尺基体の走行方向
と同方向の磁場を発生させる磁場形成手段とを備
え、前記外管２Ａと前記内管２Ｂとの間の環状部
１３に導入した非重合性気体を前記環状部内でプ
ラズマ化して、前記環状部の出口から流出させ、
一方前記内管２Ｂに導入し、前記内管２Ｂの出口
から流出させたモノマー気体をプラズマ化した前
記非重合性気体により分解させ、前記長尺基体に
前記モノマー気体のプラズマ重合膜を被着させる
ようにしたことを特徴とする長尺基体のプラズマ
処理装置。 A plasma processing apparatus for a long substrate in which a monomer plasma polymerized film is applied to the long substrate includes an outer tube 2A having a tube wall made of an insulator and a discharge plasma generator provided on the outside of the tube wall. , an inner tube 2B that is arranged substantially coaxially inside the outer tube 2A and has a tube wall made of an insulator, and the elongated base body runs inside the inner tube 2B substantially parallel to its longitudinal axis. The apparatus includes a traveling means and a magnetic field forming means for generating a magnetic field in the same direction as the traveling direction of the elongated substrate, and the non-polymerizable gas introduced into the annular portion 13 between the outer tube 2A and the inner tube 2B. turning into plasma within the annular portion and causing it to flow out from the outlet of the annular portion;
On the other hand, the monomer gas introduced into the inner tube 2B and discharged from the outlet of the inner tube 2B is decomposed by the non-polymerizable gas turned into plasma, and a plasma polymerized film of the monomer gas is coated on the elongated substrate. A plasma processing apparatus for a long substrate, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8638890U JPH0444362U (en) | 1990-08-20 | 1990-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8638890U JPH0444362U (en) | 1990-08-20 | 1990-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0444362U true JPH0444362U (en) | 1992-04-15 |
Family
ID=31818031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8638890U Pending JPH0444362U (en) | 1990-08-20 | 1990-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0444362U (en) |
-
1990
- 1990-08-20 JP JP8638890U patent/JPH0444362U/ja active Pending
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