JPH0334059U - - Google Patents
Info
- Publication number
- JPH0334059U JPH0334059U JP9383789U JP9383789U JPH0334059U JP H0334059 U JPH0334059 U JP H0334059U JP 9383789 U JP9383789 U JP 9383789U JP 9383789 U JP9383789 U JP 9383789U JP H0334059 U JPH0334059 U JP H0334059U
- Authority
- JP
- Japan
- Prior art keywords
- ion plating
- evaporation
- plating device
- evaporation source
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007733 ion plating Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はこの考案に従うイオンプレーテイング
装置を示す模式図、第２図は成膜速度のプラズマ
電子ビーム出力依存性を示すグラフ、第３図はこ
の考案に従う連続イオンプレーテイング装置を示
す模式図である。
１……真空槽、２……排気口、３……給電部、
４……ＨＣＤガン、５……カソードカバー、６…
…ビーム電源、７，８……集束コイル、９……蒸
発源、１０……蒸発容器、１１……加熱電源、１
２……加熱体、１３……基板、１４……バイアス
電源、１５……反応ガス導入口、１６……誘導加
熱コイル、１７……払出ロール、１８……巻取ロ
ール、１９……ヒーター。
Fig. 1 is a schematic diagram showing an ion plating apparatus according to this invention, Fig. 2 is a graph showing the dependence of deposition rate on plasma electron beam output, and Fig. 3 is a schematic diagram showing a continuous ion plating apparatus according to this invention. It is. 1... Vacuum chamber, 2... Exhaust port, 3... Power supply section,
4...HCD gun, 5...cathode cover, 6...
... Beam power source, 7, 8... Focusing coil, 9... Evaporation source, 10... Evaporation container, 11... Heating power source, 1
2... Heating body, 13... Substrate, 14... Bias power source, 15... Reaction gas inlet, 16... Induction heating coil, 17... Payout roll, 18... Winding roll, 19... Heater.
Claims (1)
空陰極、基板および反応ガス導入口とを配置する
、イオンプレーテイング装置において、 蒸発容器は蒸発源の間接加熱手段をそなえるこ
とを特徴とするイオンプレーテイング装置。[Scope of Claim for Utility Model Registration] In an ion plating device in which an evaporation container containing an evaporation source, a hollow cathode, a substrate, and a reaction gas inlet are arranged in a vacuum chamber, the evaporation container is used for indirect heating of the evaporation source. An ion plating device characterized by comprising a means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9383789U JPH0334059U (en) | 1989-08-11 | 1989-08-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9383789U JPH0334059U (en) | 1989-08-11 | 1989-08-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0334059U true JPH0334059U (en) | 1991-04-03 |
Family
ID=31643198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9383789U Pending JPH0334059U (en) | 1989-08-11 | 1989-08-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0334059U (en) |
-
1989
- 1989-08-11 JP JP9383789U patent/JPH0334059U/ja active Pending
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