JPH0448623U - - Google Patents
Info
- Publication number
- JPH0448623U JPH0448623U JP9028890U JP9028890U JPH0448623U JP H0448623 U JPH0448623 U JP H0448623U JP 9028890 U JP9028890 U JP 9028890U JP 9028890 U JP9028890 U JP 9028890U JP H0448623 U JPH0448623 U JP H0448623U
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- collector
- base
- lateral transistor
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図はこの考案の一実施例であるラテラルト
ランジスタの断面図である。第２図はこの考案の
一実施例であるラテラルトランジスタのＩＣ−Ｖ
ＣＥ特性曲線である。第３図は従来のラテラルト
ランジスタの断面図である。第４図は従来のラテ
ラルトランジスタのＩＣ−ＶＣＥ特性曲線である
。
１……エピタキシヤル成長済み半導体基板、２
……Ｐ型半導体基板、３……Ｎ型エピタキシヤル
層、４……Ｎ＋型埋込層、５……Ｐ＋型エミツタ
拡散層、６……Ｐ＋型コレクタ拡散層、７……Ｎ
＋型ベースコンタクト拡散層、８……熱酸化膜（
絶縁膜）、９……エミツタ電極、１０……コレク
タ電極、１１……ベース電極、１２……ベース−
エミツタ接合、１３……ベース−エミツタ接合よ
り生ずる空乏層、１４……ベース−コレクタ接合
、１５……ベース−コレクタ接合より生ずる空乏
層、１６……Ｎ＋型埋込層−Ｐ型半導体基板の接
合、１７……Ｎ＋型埋込層−Ｐ型半導体基板より
生ずる空乏層、１８……シリコン窒化膜（誘電体
層）、１９……アバランシエ注入用電極、２０…
…負に帯電したシリコン窒化膜により生ずる空乏
層。
FIG. 1 is a sectional view of a lateral transistor which is an embodiment of this invention. Figure 2 shows a lateral transistor IC-V that is an embodiment of this invention.
This is a CE characteristic curve. FIG. 3 is a cross-sectional view of a conventional lateral transistor. FIG. 4 shows an IC-VCE characteristic curve of a conventional lateral transistor. 1... Epitaxially grown semiconductor substrate, 2
...P type semiconductor substrate, 3...N type epitaxial layer, 4...N + type buried layer, 5...P + type emitter diffusion layer, 6...P + type collector diffusion layer, 7...N
+ type base contact diffusion layer, 8...thermal oxide film (
(insulating film), 9...emitter electrode, 10...collector electrode, 11...base electrode, 12...base-
Emitter junction, 13... Depletion layer generated from base-emitter junction, 14... Base-collector junction, 15... Depletion layer generated from base-collector junction, 16... N + type buried layer - P type semiconductor substrate Junction, 17... Depletion layer generated from N + type buried layer-P type semiconductor substrate, 18... Silicon nitride film (dielectric layer), 19... Avalanche injection electrode, 20...
...A depletion layer created by a negatively charged silicon nitride film.
Claims (1)
を形成し、エミツタ、コレクタ、ベース電極を表
面より引き出したラテラルトランジスタにおいて
、 エミツターコレクタ電極間のベース領域上の絶
縁膜中または絶縁膜上に、ベース領域に対して負
電位の電極または誘電体を設けたことを特徴とす
るラテラルトランジスタ。[Claims for Utility Model Registration] In a lateral transistor in which an emitter, a collector, and a base region are formed on a semiconductor substrate, and the emitter, collector, and base electrodes are drawn out from the surface, an insulating film on the base region between the emitter and collector electrodes or A lateral transistor characterized in that an electrode or dielectric material having a negative potential with respect to a base region is provided on an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028890U JPH0448623U (en) | 1990-08-28 | 1990-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028890U JPH0448623U (en) | 1990-08-28 | 1990-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448623U true JPH0448623U (en) | 1992-04-24 |
Family
ID=31824908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9028890U Pending JPH0448623U (en) | 1990-08-28 | 1990-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448623U (en) |
-
1990
- 1990-08-28 JP JP9028890U patent/JPH0448623U/ja active Pending
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