JPH0165152U - - Google Patents
Info
- Publication number
- JPH0165152U JPH0165152U JP1987159317U JP15931787U JPH0165152U JP H0165152 U JPH0165152 U JP H0165152U JP 1987159317 U JP1987159317 U JP 1987159317U JP 15931787 U JP15931787 U JP 15931787U JP H0165152 U JPH0165152 U JP H0165152U
- Authority
- JP
- Japan
- Prior art keywords
- field plate
- pnp transistor
- lateral pnp
- collector
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図はこの考案の一実施例を示す断面図、第
２図は第１図のコレクタ近傍を拡大して示す断面
図、第３図は従来の構造を示す断面図、第４図は
ＰＮＰトランジスタの接続を示す接続図、第５図
は第３図のコレクタ近傍を拡大して示す断面図。
１……Ｐ形基板、２……Ｎ＋埋込層、３……Ｎ
形エピタキシヤル層、４……Ｐ＋分離層、５……
コレクタ、６……エミツタ、７……ベース、８…
…ＳｉＯ２層、９……層間絶縁膜、１０……フイ
ールドプレート、１１……第２次Ａｌ層、１２…
…ＰＮ接合、１３……空乏層。なお、図中同一符
号は同一または相当部分を示す。
Fig. 1 is a sectional view showing an embodiment of this invention, Fig. 2 is an enlarged sectional view showing the vicinity of the collector in Fig. 1, Fig. 3 is a sectional view showing a conventional structure, and Fig. 4 is a PNP. A connection diagram showing connections of transistors, and FIG. 5 is an enlarged sectional view showing the vicinity of the collector in FIG. 3. 1...P-type substrate, 2...N + buried layer, 3...N
type epitaxial layer, 4...P + separation layer, 5...
Collector, 6... Emitsuta, 7... Base, 8...
...SiO 2 layer, 9... Interlayer insulating film, 10... Field plate, 11... Secondary Al layer, 12...
...PN junction, 13...depletion layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
とが同一表面上に形成されるラテラルＰＮＰトラ
ンジスタにおいて、 コレクタ・ベース接合の両側に拡がる空乏層領
域を覆う位置に、この空乏層領域の上部に存在す
るＳｉＯ２層の上にフイールドプレートを設け、
このフイールドプレートをコレクタと同電位に接
続することを特徴とするラテラルＰＮＰトランジ
スタ。 (2) フイールドプレートは第１次のアルミニウ
ム層であることを特徴とする実用新案登録請求の
範囲第１項記載のラテラルＰＮＰトランジスタ。 (3) フイールドプレートは不純物をドープした
ポリシリコンであることを特徴とする実用新案登
録請求の範囲第１項記載のラテラルＰＮＰトラン
ジスタ。[Claims for Utility Model Registration] (1) In a lateral PNP transistor in which a P-type emitter region and a P-type collector region are formed on the same surface, a position covering the depletion layer region extending on both sides of the collector-base junction Then, a field plate is provided on the SiO2 layer existing on the top of this depletion layer region,
A lateral PNP transistor characterized in that the field plate is connected to the same potential as the collector. (2) The lateral PNP transistor according to claim 1, wherein the field plate is a primary aluminum layer. (3) The lateral PNP transistor according to claim 1, wherein the field plate is made of polysilicon doped with impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159317U JPH0165152U (en) | 1987-10-20 | 1987-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987159317U JPH0165152U (en) | 1987-10-20 | 1987-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165152U true JPH0165152U (en) | 1989-04-26 |
Family
ID=31440424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987159317U Pending JPH0165152U (en) | 1987-10-20 | 1987-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165152U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142242A (en) * | 2010-01-08 | 2011-07-21 | Panasonic Corp | Esd protective element, semiconductor device, and plasma display |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936513A (en) * | 1972-08-08 | 1974-04-04 |
-
1987
- 1987-10-20 JP JP1987159317U patent/JPH0165152U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4936513A (en) * | 1972-08-08 | 1974-04-04 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142242A (en) * | 2010-01-08 | 2011-07-21 | Panasonic Corp | Esd protective element, semiconductor device, and plasma display |
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