JPH0448644U

JPH0448644U -

Info

Publication number: JPH0448644U
Application number: JP9094890U
Authority: JP
Priority date: 1990-08-30
Filing date: 1990-08-30
Publication date: 1992-04-24
Anticipated expiration: 2005-08-30
Also published as: JP2537899Y2

Description

[Brief explanation of the drawing]

第１図Ａは、本考案の一実施例の半導体装置の
平面図、第１図Ｂは、同実施例の半導体装置のＢ
−Ｂ線に沿う断面図、第２図は、同実施例の半導
体装置の作用を示す説明図、第３図Ａは、本考案
の他の実施例の半導体装置の平面図、第３図Ｂは
、同他の実施例の半導体装置のＢ−Ｂ線に沿う断
面図、第４図は、従来の半導体装置を示す断面図
、第５図は、同従来の半導体装置の問題点を示す
断面図である。１０……ＮＢ層、１１……Ｐガードリング層、
１２……Ｐガードリング層、１３，１４……ＰＢ
層、１５，１６……ＮＥ層、１７……Ｔ_２電極、
１８……Ｔ_１電極、２０，３０……半導体装置、
２１，２２……ＰＢ層、２１ａ……ＰＢ層の凸状
部。 FIG. 1A is a plan view of a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a plan view of a semiconductor device according to the same embodiment.
2 is an explanatory diagram showing the operation of the semiconductor device of the same embodiment; FIG. 3A is a plan view of the semiconductor device of another embodiment of the present invention; FIG. 3B is a cross-sectional view taken along the line -B. is a sectional view taken along line B-B of a semiconductor device according to another embodiment, FIG. 4 is a sectional view showing a conventional semiconductor device, and FIG. 5 is a sectional view showing problems with the conventional semiconductor device. It is a diagram. 10...NB layer, 11...P guard ring layer,
12...P guard ring layer, 13,14...PB
layer, 15, 16...NE layer, 17...T ₂ electrode,
18... _T1 electrode, 20,30...semiconductor device,
21, 22...PB layer, 21a...Convex portion of PB layer.

Claims

[Claims for Utility Model Registration] 1. A first semiconductor layer of one conductivity type, and a first semiconductor layer having a different conductivity type and a predetermined diffusion depth in a predetermined region of one main surface of the first semiconductor layer. a second semiconductor layer extending toward the inside of the layer; and a second semiconductor layer having a predetermined diffusion depth on the other main surface of the first semiconductor layer, facing the second semiconductor layer and having a conductivity type different from that of the first semiconductor layer. a third semiconductor layer extending toward the first semiconductor; a fourth semiconductor layer having a different conductivity type and extending at a predetermined diffusion depth in a predetermined region within the second semiconductor layer; Said third
In a semiconductor device comprising a fifth semiconductor layer having a different conductivity type and extending at a predetermined diffusion depth in a predetermined region within the semiconductor layer, a sixth semiconductor layer same as the second semiconductor layer is provided.
a semiconductor layer, and the sixth semiconductor layer surrounds a peripheral region of the second semiconductor layer in a substantially U-shape, leaving a predetermined region at one end of the second semiconductor layer close to the fourth semiconductor layer. and has a seventh semiconductor layer of the same conductivity type as the third semiconductor layer, the seventh semiconductor layer leaving a predetermined region at one end of the third semiconductor layer close to the fifth semiconductor layer. A semiconductor device characterized in that the third semiconductor layer is formed so as to surround a peripheral region thereof in a substantially U-shape. 2. A first semiconductor layer of one conductivity type, and a predetermined region of one main surface of the first semiconductor layer having a different conductivity type and extending toward the first semiconductor layer at a predetermined diffusion depth. a second semiconductor layer on the other main surface of the first semiconductor layer, opposite to the second semiconductor layer, having a conductivity type different from that of the first semiconductor layer and having a predetermined diffusion depth within the first semiconductor layer; a third semiconductor layer extending in the direction; a fourth semiconductor layer having a different conductivity type and extending in a predetermined diffusion depth in a predetermined region within the second semiconductor layer;
In a semiconductor device comprising a fifth semiconductor layer having a different conductivity type and extending at a predetermined diffusion depth in a predetermined region within the semiconductor layer,
A convex portion having a bent surface with a small radius of curvature is provided in a predetermined region of one end of the semiconductor layer, and a convex portion with a radius of curvature is provided in a predetermined region of one end of the third semiconductor layer close to the fifth semiconductor layer. A semiconductor device characterized by having a convex portion having a small curved surface.