JPH0467325U - - Google Patents
Info
- Publication number
- JPH0467325U JPH0467325U JP11136190U JP11136190U JPH0467325U JP H0467325 U JPH0467325 U JP H0467325U JP 11136190 U JP11136190 U JP 11136190U JP 11136190 U JP11136190 U JP 11136190U JP H0467325 U JPH0467325 U JP H0467325U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- metal film
- thickness
- view
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Die Bonding (AREA)
Description
第１図、第２図はこの考案の一実施例である半
導体チツプの平面図および第１図の断面図、第３
図はこの考案の他の実施例を示す半導体チツプの
断面図、第４図、第５図は従来のＧａＡｓ半導体
ウエハの平面図および断面図、第６図は従来の半
導体チツプの断面図、第７図は加熱により半導体
チツプが、湾曲することを説明する断面図である
。
図において、１は半導体チツプの表面、２は半
導体層、３は金属薄膜層、４は金属膜、５は薄い
金属膜層部、６は金属膜に形成された溝を示す。
なお、図中、同一符号は同一、又は相当部分を示
す。
Figures 1 and 2 are a plan view of a semiconductor chip that is an embodiment of this invention, a sectional view of Figure 1, and Figure 3.
4 and 5 are a plan view and a sectional view of a conventional GaAs semiconductor wafer, and FIG. 6 is a sectional view of a conventional semiconductor chip. FIG. 7 is a cross-sectional view illustrating how a semiconductor chip is curved by heating. In the figure, 1 is the surface of a semiconductor chip, 2 is a semiconductor layer, 3 is a metal thin film layer, 4 is a metal film, 5 is a thin metal film layer portion, and 6 is a groove formed in the metal film.
In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
属膜を備え、この金属膜部に他の金属薄膜層々厚
の1/2以上の深さを有する溝を設けたことを特徴
とする半導体チツプ。 1. A semiconductor chip comprising a metal film with a thickness of 20 μm or more on the back surface of the semiconductor chip, and a groove having a depth of 1/2 or more of the thickness of other metal thin film layers is provided in the metal film portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11136190U JPH0467325U (en) | 1990-10-23 | 1990-10-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11136190U JPH0467325U (en) | 1990-10-23 | 1990-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0467325U true JPH0467325U (en) | 1992-06-15 |
Family
ID=31858799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11136190U Pending JPH0467325U (en) | 1990-10-23 | 1990-10-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0467325U (en) |
-
1990
- 1990-10-23 JP JP11136190U patent/JPH0467325U/ja active Pending