JPH0448655U - - Google Patents
Info
- Publication number
- JPH0448655U JPH0448655U JP9143790U JP9143790U JPH0448655U JP H0448655 U JPH0448655 U JP H0448655U JP 9143790 U JP9143790 U JP 9143790U JP 9143790 U JP9143790 U JP 9143790U JP H0448655 U JPH0448655 U JP H0448655U
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- layer
- ridge portion
- laser device
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Description
第１図は本考案の半導体レーザ装置の一実施例
を示す拡大正面図、第２図Ａ，Ｂは結晶方位によ
るエツチング形状の違いを示す説明図、第３図Ａ
〜Ｅは従来の半導体レーザ装置の製造方法を示す
工程図である。
１……ｎ−半導体基板、２……ｎ−クラツド層
（第１のクラツド層）、３……活性層、４……ｐ
−クラツド層（第２のクラツド層）、４ａ，４ｂ
……リツジ部、５……ＳｉＯ２膜、６ａ，６ｂ…
…ｎ−電流狭窄層、７……ｐ−キヤツプ層、８，
９……電極。
FIG. 1 is an enlarged front view showing one embodiment of the semiconductor laser device of the present invention, FIGS. 2A and B are explanatory diagrams showing differences in etching shape depending on crystal orientation, and FIG. 3A
-E are process diagrams showing a conventional method for manufacturing a semiconductor laser device. 1...n-semiconductor substrate, 2...n-cladding layer (first cladding layer), 3...active layer, 4...p
- Clad layer (second clad layer), 4a, 4b
...Ridge part, 5...SiO 2 film, 6a, 6b...
...n-current confinement layer, 7...p-cap layer, 8,
9...Electrode.
Claims (1)
性層、第２のクラツド層が順次積層された半導体
レーザ装置であつて、 前記第２のクラツド層の一部厚さを変えて設け
られた逆メサ型のリツジ部と、 このリツジ部以外の第２のクラツド層上に前記
リツジ部上面と同じ高さまで設けられた電流狭窄
層とを有することを特徴とする半導体レーザ装置
。[Claims for Utility Model Registration] A semiconductor laser device in which at least a semiconductor substrate, a first cladding layer, an active layer, and a second cladding layer are sequentially laminated, wherein the thickness of a portion of the second cladding layer is A semiconductor laser device comprising: an inverted mesa-type ridge portion provided in a different manner; and a current confinement layer provided on a second cladding layer other than the ridge portion to the same height as the upper surface of the ridge portion. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9143790U JPH0448655U (en) | 1990-08-31 | 1990-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9143790U JPH0448655U (en) | 1990-08-31 | 1990-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448655U true JPH0448655U (en) | 1992-04-24 |
Family
ID=31827067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9143790U Pending JPH0448655U (en) | 1990-08-31 | 1990-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448655U (en) |
-
1990
- 1990-08-31 JP JP9143790U patent/JPH0448655U/ja active Pending
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