JPH02140855U - - Google Patents
Info
- Publication number
- JPH02140855U JPH02140855U JP1989049881U JP4988189U JPH02140855U JP H02140855 U JPH02140855 U JP H02140855U JP 1989049881 U JP1989049881 U JP 1989049881U JP 4988189 U JP4988189 U JP 4988189U JP H02140855 U JPH02140855 U JP H02140855U
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor element
- mesa
- utility
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Description
第１図は、従来のヒートシンクを融着した半導
体素子の図、第２図は、本考案のヒートシンクを
融着した半導体素子の図、第３図は、半導体素子
の良品調査したときの接続回路を示す図、第４図
はヒートシンクを融着した半導体素子の電圧−電
流特性の良否を比較して示す図、である。
１，１１……ヒートシンク、１１１……メサ、
２……素子、２１……素子基板、２２……エピタ
キシヤル層、２２１……ｎ（またはｐ）クラツド
層、２２２……活性層、２２３……ｐ（またはｎ
）クラツド層、３……半田、３１……半田の縁部
。
Figure 1 is a diagram of a semiconductor element with a conventional heat sink fused to it, Figure 2 is a diagram of a semiconductor element with a heat sink of the present invention fused to it, and Figure 3 is a connection circuit when inspecting non-defective semiconductor elements. FIG. 4 is a diagram comparing and comparing the quality of voltage-current characteristics of a semiconductor element to which a heat sink is fused. 1, 11...Heat sink, 111...Mesa,
2...Element, 21...Element substrate, 22...Epitaxial layer, 221...n (or p) cladding layer, 222...active layer, 223...p (or n)...
) Clad layer, 3...Solder, 31...Solder edge.
Claims (1)
つて、ヒートシンクの素子融着面に素子面積より
少し狭いメサを形成したことを特徴とする半導体
素子用ヒートシンク。 1. A heat sink for a semiconductor element, which is used for heat dissipation of a semiconductor element, and is characterized in that a mesa slightly narrower than the area of the element is formed on the element fusion surface of the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989049881U JPH02140855U (en) | 1989-04-27 | 1989-04-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989049881U JPH02140855U (en) | 1989-04-27 | 1989-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02140855U true JPH02140855U (en) | 1990-11-26 |
Family
ID=31567950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989049881U Pending JPH02140855U (en) | 1989-04-27 | 1989-04-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02140855U (en) |
-
1989
- 1989-04-27 JP JP1989049881U patent/JPH02140855U/ja active Pending
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