JPH0451974B2 - - Google Patents
Info
- Publication number
- JPH0451974B2 JPH0451974B2 JP1086909A JP8690989A JPH0451974B2 JP H0451974 B2 JPH0451974 B2 JP H0451974B2 JP 1086909 A JP1086909 A JP 1086909A JP 8690989 A JP8690989 A JP 8690989A JP H0451974 B2 JPH0451974 B2 JP H0451974B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- support plate
- resin
- section
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、樹脂封止形半導体装置、特に短絡事
故が少なくかつ製造が容易な樹脂封止形半導体装
置の製造方法に関連する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resin-sealed semiconductor device, particularly to a method for manufacturing a resin-sealed semiconductor device that is less prone to short-circuit accidents and is easy to manufacture.
従来の技術
従来、一般的な電力用樹脂封止形半導体装置に
おいては、半導体チツプが接着された支持板の裏
面には封止樹脂が形成されていない。このため、
この半導体装置を外部放熱体に取付けるに際して
は、外部放熱体との間に絶縁シートを介在させな
ければならず、取付作業が煩雑になつた。そこ
で、支持板の裏面にも封止樹脂を形成する方法が
提案された。このような樹脂封止技術は、例え
ば、特開昭57−178352号公報や特開昭58−143538
号公報で開示されている。すなわち、リードフレ
ームの一部を構成する支持板上に半導体チツプを
電気伝導可能に接着したのち、半導体チツプは細
線で外部リードと接続される。次に、リードフレ
ームは金型に装着され、キヤビテイ内に融解樹脂
が圧入される。このとき、キヤビテイ内で支持板
が移動しないように、支持板の各側部に連結され
た外部リードと細条が金型で把持される。融解樹
脂が固化したのち、リードフレームが金型から取
外され、リードフレームの所定部分が切断され
る。特開昭57−178352号では、細条を折り曲げて
切断するために、封止樹脂の外面をまたぐように
して細条に小断面部を形成している。BACKGROUND OF THE INVENTION Conventionally, in general resin-sealed semiconductor devices for electric power, no sealing resin is formed on the back surface of a support plate to which a semiconductor chip is bonded. For this reason,
When this semiconductor device is attached to an external heat radiator, an insulating sheet must be interposed between the semiconductor device and the external heat radiator, making the mounting work complicated. Therefore, a method has been proposed in which a sealing resin is also formed on the back surface of the support plate. Such resin sealing technology is disclosed in, for example, Japanese Patent Application Laid-Open No. 57-178352 and Japanese Patent Application Laid-Open No. 58-143538.
It is disclosed in the publication no. That is, after a semiconductor chip is electrically conductively bonded onto a support plate constituting a part of a lead frame, the semiconductor chip is connected to external leads using thin wires. Next, the lead frame is attached to a mold, and molten resin is press-fitted into the cavity. At this time, the external leads and strips connected to each side of the support plate are gripped by the mold so that the support plate does not move within the cavity. After the molten resin has solidified, the lead frame is removed from the mold and a predetermined portion of the lead frame is cut. In JP-A-57-178352, in order to bend and cut the strip, a small cross section is formed in the strip so as to straddle the outer surface of the sealing resin.
発明が解決しようとする課題
しかし、細条の切断面が封止樹脂の外面に露出
することには変わりない。そこで、特開昭58−
143538号では、第１５図に示す通り、切断後の封
止樹脂の外面５０から突出した細条端部を化学エ
ツチング等の方法により除去し、封止樹脂の外面
５０から窪む位置５１に細条の先端を形成してい
た。しかしこの方法は、細条の一部を除去する付
加的工程が必要となりコストアツプを招いた。し
かも所望の化学エツチング等を量産的に行うこと
自体に新たな技術を要するので、実用的とは言い
難い。Problems to be Solved by the Invention However, the cut surfaces of the strips are still exposed to the outer surface of the sealing resin. Therefore, JP-A-58-
In No. 143538, as shown in FIG. 15, the ends of the strips protruding from the outer surface 50 of the sealing resin after cutting are removed by a method such as chemical etching, and a strip is inserted at a recessed position 51 from the outer surface 50 of the sealing resin. It formed the tip of the ray. However, this method required an additional step to remove a portion of the strips, resulting in increased costs. Moreover, mass production of the desired chemical etching requires a new technology, so it cannot be said to be practical.
そこで、本発明では上記問題を解決する樹脂封
止形半導体装置の製造方法を提供することを目的
とする。 Therefore, an object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device that solves the above-mentioned problems.
課題を解決するための手段
本発明の樹脂封止形半導体装置の製造方法によ
れば、支持板と、支持板の一端に連結された外部
リードと、支持板の他端に連結された細条とを有
し、外部リード及び細条は支持板よりも肉薄に形
成されており、支持板の下面と細条の下面との間
に、支持板の下面から離間する方向に延びる段差
部が形成され、細条の一部に小断面部が形成され
ると共に、支持板上に半導体チツプが電気的導通
可能に接着されたリードフレームを準備する工程
と、細条の小断面部が金型内のキヤビテイ形成面
から実質的に所定距離だけ内側に配置されるよう
にリードフレームを金型に装着する工程と、金型
のキヤビテイ内に融解樹脂を圧入する工程と、融
解樹脂の固化後、リードフレームを金型から取出
す工程と、細条にその導出方向への引張力を作用
させて、細条の小断面部で細条を切断する工程と
を含む。Means for Solving the Problems According to the method of manufacturing a resin-sealed semiconductor device of the present invention, a support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate are provided. The external leads and strips are formed thinner than the support plate, and a stepped portion extending in a direction away from the bottom surface of the support plate is formed between the lower surface of the support plate and the lower surface of the strips. A step of preparing a lead frame in which a small cross section is formed in a part of the strip and a semiconductor chip is bonded to the supporting plate in an electrically conductive manner, and a small cross section of the strip is formed in a mold. a step of mounting the lead frame on the mold so that it is located substantially inward from the cavity forming surface by a predetermined distance; a step of press-fitting the molten resin into the cavity of the mold; The method includes a step of taking out the frame from the mold, and a step of applying a tensile force to the strip in the direction in which the strip is taken out, and cutting the strip at a small cross-section of the strip.
作 用
細条は支持板よりも相対的に肉薄に形成され、
細条を引張りによつて容易に切断することができ
る。また、細条は支持板との間に段差部が形成さ
れて上方に偏位しているので、支持板の下面側の
樹脂を肉薄に形成しても細条の外部放熱体からの
高さを大きくとれる。結果として、細条から外部
放熱体までの沿面距離は長くなり、絶縁不良が防
止される。Function The strips are formed relatively thinner than the support plate,
The strips can be easily cut by pulling. In addition, since a step is formed between the strips and the support plate and they are deviated upward, even if the resin on the bottom side of the support plate is made thin, the height of the strips from the external heat sink is You can get a large amount of As a result, the creepage distance from the strips to the external heat sink is increased and insulation failures are prevented.
実施例
以下図面について、本発明の実施例を説明す
る。本発明で製造される樹脂封止形半導体装置
は、第１図に示すリードフレーム１から作られ
る。リードフレーム１は、トランジスタチツプ等
の半導体チツプ２がその一方の主面に半田付けさ
れた支持板３を有する。半導体チツプ２は、必要
に応じて保護コート４を形成するシリコン樹脂で
被覆される。支持板３には、コレクタリード５が
一体成形される。コレクタリード５は、ベースリ
ード６とエミツタリード７と共に外部リードと総
称され、タイバー８および共通細条９により直角
方向で互いに連結される。ベースリード６とエミ
ツタリード７は、それぞれアルミニウム線１０，
１１により半導体チツプ２の所定位置へ接続され
る。Embodiments Examples of the present invention will be described below with reference to the drawings. A resin-sealed semiconductor device manufactured according to the present invention is made from a lead frame 1 shown in FIG. The lead frame 1 has a support plate 3 on one main surface of which a semiconductor chip 2, such as a transistor chip, is soldered. The semiconductor chip 2 is coated with silicone resin forming a protective coat 4 if necessary. A collector lead 5 is integrally molded on the support plate 3. The collector lead 5, together with the base lead 6 and the emitter lead 7, are collectively referred to as an external lead, and are connected to each other at right angles by tie bars 8 and common strips 9. The base lead 6 and the emitter lead 7 are made of aluminum wire 10,
11, it is connected to a predetermined position of the semiconductor chip 2.
支持板３には、コレクタリード５に対し反対側
へ伸びる一対の細条１２，１３が一体に成形され
る。外部リード及び細条１２，１３は支持板３よ
りも肉薄に形成されている。また、細条１２，１
３の下面と支持板３の下面との間には段差部２７
が形成されている。各細条１２，１３の外端は、
共通細条１４により直角方向で互いに連結され
る。後工程で形成される鎖線１５で示す封止樹脂
の端面１６から所定距離だけ内側に離れた位置の
各細条１２，１３には小断面部１７，１８が設け
られる。小断面部１７，１８は、後述の通り、
種々の形状のものを選択することができる。ま
た、小断面部１７，１８には、細条の切断時に引
張応力が集中する最小断面部１７ａ，１８ａが形
成される。 A pair of strips 12 and 13 extending toward the opposite side of the collector lead 5 are integrally formed on the support plate 3 . The external leads and strips 12, 13 are formed thinner than the support plate 3. Also, strip 12,1
There is a stepped portion 27 between the lower surface of the support plate 3 and the lower surface of the support plate 3.
is formed. The outer end of each strip 12, 13 is
They are connected to each other at right angles by a common strip 14. Small cross-section portions 17 and 18 are provided in each of the strips 12 and 13 at a position a predetermined distance inward from an end surface 16 of the sealing resin indicated by a chain line 15 that will be formed in a subsequent process. The small cross-section portions 17 and 18 are as described below.
Various shapes can be selected. Further, the small cross-section portions 17 and 18 are formed with minimum cross-section portions 17a and 18a on which tensile stress is concentrated when cutting the strip.
なお、第１図ではトランジスタ１個分の支持板
３、外部リード及び細条１２，１３を有するリー
ドフレーム１を示すが、実際には、多数の支持
板、外部リード及び細条がタイバー８と共通細条
９，１４により並行に支持された金属製リードフ
レームが使用される。 Although FIG. 1 shows a lead frame 1 having a support plate 3, external leads, and strips 12 and 13 for one transistor, in reality, a large number of support plates, external leads, and strips are connected to tie bars 8. Metal lead frames are used which are supported in parallel by common strips 9,14.
リードフレーム１は、第２図及び第３図に示す
金型１９内に装着される。第２図はコレクタリー
ド５の中心線に沿う断面を示し、第３図は細条１
３の中心線に沿う断面を示す。金型１９は下型２
０と上型２１とで構成され、リードフレーム１を
収容するキヤビテイ２２を形成する。小断面部の
うちの最小断面部１７ａ，１８ａは金型のキヤビ
テイ形成面からｌだけ内側に配置される。 The lead frame 1 is mounted in a mold 19 shown in FIGS. 2 and 3. 2 shows a cross section along the center line of the collector lead 5, and FIG. 3 shows the strip 1.
A cross section taken along the center line of No. 3 is shown. The mold 19 is the lower mold 2
0 and an upper mold 21 to form a cavity 22 that accommodates the lead frame 1. Among the small cross-section parts, the smallest cross-section parts 17a and 18a are arranged inside by l from the cavity forming surface of the mold.
上述の通り金型１９にリードフレーム１を装着
したのち、キヤビテイ２２内に熱硬化性の融解エ
ポキシ樹脂が公知のトランスフアモールド法によ
りゲート（図示せず）から圧入され、支持板３を
含むリードフレーム１の一部分が樹脂１５により
封止される。 After the lead frame 1 is mounted on the mold 19 as described above, a thermosetting molten epoxy resin is press-fitted into the cavity 22 through a gate (not shown) by a known transfer molding method, and the leads including the support plate 3 are pressed into the cavity 22 through a gate (not shown). A portion of the frame 1 is sealed with resin 15.
樹脂１５が固化したのち、第４図に示すリード
フレーム１を金型１９から取出す。次に、樹脂１
５から導出された細条１２，１３を導出方向に引
張ることにより、小断面部１７，１８の最小断面
部１７ａ，１８ａで切断し、共通細条１４と細条
１２，１３の一部を除去する。その後、各外部リ
ードを連結するタイバー８と共通細条９もプレス
切断により除去する。このように製造した半導体
装置の１例を第５図に示す。細条１２，１３が導
出されていた樹脂１５に孔２３，２４が形成され
る。本出願人は本発明による製造方法で実際に樹
脂封止形半導体装置を製造したが、孔２３，２４
の形状は細条１２，１３が抜けた後にほぼ等しく
形成された。また、細条１２，１３は支持板３よ
りも肉薄に形成されており、最小断面部１７ａ，
１８ａの断面積は十分に小さいから、細条１２，
１３は引張りによつて容易に破断することができ
る。孔２３，２４の周辺の樹脂１５に特性変動ま
たは外観不良の点で実用上問題にすべきクラツ
ク、そり等の異常は全く発生しなかつた。 After the resin 15 has solidified, the lead frame 1 shown in FIG. 4 is taken out from the mold 19. Next, resin 1
By pulling the strips 12, 13 derived from the strips 12, 13 in the direction of extraction, they are cut at the minimum cross-section portions 17a, 18a of the small cross-section portions 17, 18, and the common strip 14 and part of the strips 12, 13 are removed. do. Thereafter, the tie bars 8 and common strips 9 connecting each external lead are also removed by press cutting. An example of a semiconductor device manufactured in this manner is shown in FIG. Holes 23, 24 are formed in the resin 15 from which the strips 12, 13 were led out. The applicant actually manufactured a resin-sealed semiconductor device using the manufacturing method according to the present invention.
The shapes of are approximately equal after the strips 12 and 13 are removed. Further, the strips 12 and 13 are formed thinner than the support plate 3, and the minimum cross-section portions 17a,
Since the cross-sectional area of 18a is sufficiently small, the strips 12,
13 can be easily broken by tension. Abnormalities such as cracks and warpage, which should be a practical problem in terms of characteristic fluctuations or poor appearance, did not occur in the resin 15 around the holes 23 and 24 at all.
第６図に示すように、細条１３の端面２５は、
樹脂の端面１６より長さl1だけ内側に窪み、そこ
に孔２４が形成される。また、細条１２，１３は
支持板３との間に段差部２７が形成されて上方に
偏位しているので、支持板３の下面側の樹脂１５
を第３図に示すように肉薄に形成しても細条１
２，１３の外部放熱体からの高さl2を大きくとれ
る。結果として、細条１２，１３から外部放熱体
２６までの沿面距離l0はl0＝l1＋l2と長くなり、絶
縁不良が防止される。更に、孔２３，２４が小さ
いため、他の素子、キヤビネツト又は人体等を含
む周囲と細条１２，１３との接触による短絡事故
も防止される。孔２３，２４には、絶縁不良を完
全に防止するため、樹脂を充填してもよい。しか
し、この樹脂を充填しなくても実用上は問題はな
い。また、放熱性の点においても、支持板３が細
条１２，１３に比べて肉厚に形成されているし、
支持板３の下面側の樹脂１５を肉薄に形成するこ
とができるから、支持板３の下面が露出したタイ
プの半導体装置と同等の放熱効果を期待できる。 As shown in FIG. 6, the end surface 25 of the strip 13 is
It is recessed inward by a length l 1 from the end surface 16 of the resin, and a hole 24 is formed there. Further, since the strips 12 and 13 are deviated upward with a stepped portion 27 formed between them and the support plate 3, the resin 15 on the lower surface side of the support plate 3
Even if it is formed thinly as shown in Fig. 3, the strip 1
The height l 2 from the external heat sink of 2 and 13 can be increased. As a result, the creepage distance l 0 from the strips 12, 13 to the external heat sink 26 becomes longer as l 0 =l 1 +l 2 , thereby preventing insulation failure. Furthermore, since the holes 23 and 24 are small, short circuit accidents due to contact between the strips 12 and 13 with other components, the cabinet, or the surrounding area, including the human body, are also prevented. The holes 23 and 24 may be filled with resin to completely prevent insulation defects. However, there is no practical problem even if this resin is not filled. Also, in terms of heat dissipation, the support plate 3 is formed thicker than the strips 12 and 13,
Since the resin 15 on the lower surface side of the support plate 3 can be formed thin, it is possible to expect a heat dissipation effect equivalent to that of a type of semiconductor device in which the lower surface of the support plate 3 is exposed.
第７図〜第１４図は細条の小断面部の変形例を
示す。第７図の例では、内側に先細のテーパ部３
０を樹脂の端面１６まで細条１３に形成しかつ引
張力に対向する肩部３１が設けられる。第８図は
菱形の孔３２を細条１３に形成した例を示し、第
９図は円形の孔３３を形成した例を示す。第１０
図はテーパ部３０が樹脂外部まで伸びる例を示
す。第１１図は肩部が３１と３４で２段に形成さ
れた例を示し、第１２図は細条１３の厚さを部分
的に薄くして小断面部１８を形成する例を示す。
第１３図は細条１３に加えられる引張力に対向す
る力を更に強化するため、樹脂が充填される孔３
５を小断面部分より支持板側の細条１３に形成す
る例で、第１４図は同様の理由で細条１３にコイ
ニング即ち線状の切込３６を形成した例を示す。 7 to 14 show modifications of the small cross-section of the strip. In the example shown in FIG. 7, the tapered portion 3 tapered inwardly
0 to the end face 16 of the resin in the strip 13 and is provided with a shoulder 31 facing the tensile force. FIG. 8 shows an example in which diamond-shaped holes 32 are formed in the strip 13, and FIG. 9 shows an example in which circular holes 33 are formed. 10th
The figure shows an example in which the tapered portion 30 extends to the outside of the resin. FIG. 11 shows an example in which the shoulder portions are formed in two stages 31 and 34, and FIG. 12 shows an example in which the thickness of the strip 13 is partially reduced to form a small cross-section portion 18.
FIG. 13 shows a hole 3 filled with resin to further strengthen the force opposing the tensile force applied to the strip 13.
5 is formed in the strip 13 closer to the support plate than the small cross-sectional portion, and FIG. 14 shows an example in which a coining or linear cut 36 is formed in the strip 13 for the same reason.
なお、上記実施例ではトランジスタについて説
明したが、この説明はダイオード、サイリスタ等
他の半導体装置にも応用できることは明らかであ
る。 Note that although the above embodiments have been explained regarding transistors, it is clear that this explanation can also be applied to other semiconductor devices such as diodes and thyristors.
発明の効果
上述のように、本発明の樹脂封止形半導体装置
の製造方法によれば、細条の破断部が封止樹脂の
外周面よりも内側に位置する。したがつて、細条
の破断部と外部放熱体との沿面距離が大きくとれ
るので、絶縁耐圧が向上する。また、細条の破断
部の接触による短絡事故が起こり難い。さらに支
持板が細条よりも肉厚であるため、放熱性が良好
な樹脂封止形半導体装置を提供できる。また、細
条が肉薄であるから、細条の引張り破断が容易で
あるし、細条が支持板の下面から離間するように
上方に偏位しているので、絶縁耐圧向上の点で好
都合である。Effects of the Invention As described above, according to the method for manufacturing a resin-sealed semiconductor device of the present invention, the broken portion of the strip is located inside the outer peripheral surface of the sealing resin. Therefore, the creepage distance between the broken portion of the strip and the external heat radiator can be increased, so that the dielectric strength voltage is improved. In addition, short-circuit accidents due to contact between the broken parts of the strips are less likely to occur. Furthermore, since the support plate is thicker than the strip, a resin-sealed semiconductor device with good heat dissipation can be provided. In addition, since the strips are thin, they are easy to tensile break, and since the strips are deviated upward away from the bottom surface of the support plate, this is advantageous in terms of improving dielectric strength. be.
第１図は本発明による樹脂封止形半導体装置の
製造方法に使用するリードフレームの平面図、第
２図及び第３図はこのリードフレームを金型に装
着して樹脂封止したときのそれぞれコレクタリー
ド及び細条の中心線に沿う断面図、第４図は金型
から取出されたリードフレームの斜視図、第５図
は本発明による樹脂封止形半導体装置の製造方法
で作られた半導体装置の斜視図、第６図は細条切
断部の部分的拡大断面図、第７図、第８図、第９
図、第１０図、第１１図、第１２図、第１３図及
び第１４図は細条の小断面部に関する種々の形状
を示す断面図、第１５図は従来の樹脂封止形半導
体装置の例を示す破砕断面図である。
１……リードフレーム、２……半導体チツプ、
３……支持板、５，６，７……外部リード、１
２，１３……細条、１５……封止樹脂、１７，１
８……小断面部、１７ａ，１８ａ……小断面部の
うちの最小断面部、１９……金型、２２……キヤ
ビテイ、２７……段差部。
Fig. 1 is a plan view of a lead frame used in the method for manufacturing a resin-sealed semiconductor device according to the present invention, and Figs. 2 and 3 show the lead frame mounted in a mold and sealed with resin. 4 is a perspective view of the lead frame taken out from the mold, and FIG. 5 is a semiconductor manufactured by the method for manufacturing a resin-sealed semiconductor device according to the present invention. A perspective view of the device, FIG. 6 is a partially enlarged sectional view of the strip cutting section, FIGS. 7, 8, and 9.
10, 11, 12, 13, and 14 are cross-sectional views showing various shapes of small cross-section portions of strips, and FIG. 15 is a diagram of a conventional resin-sealed semiconductor device. It is a fragmentary cross-sectional view showing an example. 1...Lead frame, 2...Semiconductor chip,
3... Support plate, 5, 6, 7... External lead, 1
2,13...Stripes, 15...Sealing resin, 17,1
8...Small cross-section part, 17a, 18a...Minimum cross-section part among the small cross-section parts, 19...Mold, 22...Cavity, 27...Step part.
Claims (1)
部リードと、前記支持板の他端に連結された細条
とを有し、前記外部リード及び前記細条は前記支
持板よりも肉薄に形成されており、前記支持板の
下面と前記細条の下面との間に、前記支持板の下
面から離間する方向に延びる段差部が形成され、
前記細条の一部に小断面部が形成されると共に、
前記支持板上に半導体チツプが電気的導通可能に
接着されたリードフレームを準備する工程と、 前記細条の小断面部が金型内のキヤビテイ形成
面から実質的に所定距離だけ内側に配置されるよ
うに前記リードフレームを金型に装着する工程
と、 前記金型のキヤビテイ内に融解樹脂を圧入する
工程と、 前記融解樹脂の固化後、前記リードフレームを
前記金型から取出す工程と、 前記細条にその導出方向への引張力を作用させ
て、前記細条の小断面部で前記細条を切断する工
程と、 を含むことを特徴とする樹脂封止形半導体装置の
製造方法。 ２ 前記細条の小断面部は前記金型内のキヤビテ
イ形成面から所定距離だけ内側の位置に置かれる
最小断面部を有し、該最小断面部において前記細
条が切断される特許請求の範囲第１項記載の樹脂
封止形半導体装置の製造方法。[Scope of Claims] 1. A support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate, and the external lead and the strip are connected to the A stepped portion is formed thinner than the support plate, and extends in a direction away from the lower surface of the support plate between the lower surface of the support plate and the lower surface of the strip;
A small cross section is formed in a part of the strip, and
preparing a lead frame on which a semiconductor chip is electrically bonded on the support plate; and a small cross section of the strip is disposed substantially inward by a predetermined distance from a cavity forming surface in the mold. a step of press-fitting the molten resin into the cavity of the mold; a step of taking out the lead frame from the mold after solidifying the molten resin; A method for manufacturing a resin-sealed semiconductor device, comprising the steps of: applying a tensile force to the strip in a direction in which the strip is led out, and cutting the strip at a small cross-section portion of the strip. 2. Claims in which the small cross section of the strip has a minimum cross section located a predetermined distance inside from the cavity forming surface in the mold, and the strip is cut at the minimum cross section. 2. A method for manufacturing a resin-sealed semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1086909A JPH01309338A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1086909A JPH01309338A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59159047A Division JPS6156420A (en) | 1984-07-31 | 1984-07-31 | Manufacture of resin-sealed semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3042377A Division JPH04211138A (en) | 1991-02-15 | 1991-02-15 | Manufacture of resin sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01309338A JPH01309338A (en) | 1989-12-13 |
| JPH0451974B2 true JPH0451974B2 (en) | 1992-08-20 |
Family
ID=13899969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1086909A Granted JPH01309338A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01309338A (en) |
-
1989
- 1989-04-07 JP JP1086909A patent/JPH01309338A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01309338A (en) | 1989-12-13 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |