JPH0451976B2 - - Google Patents
Info
- Publication number
- JPH0451976B2 JPH0451976B2 JP1086911A JP8691189A JPH0451976B2 JP H0451976 B2 JPH0451976 B2 JP H0451976B2 JP 1086911 A JP1086911 A JP 1086911A JP 8691189 A JP8691189 A JP 8691189A JP H0451976 B2 JPH0451976 B2 JP H0451976B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- support plate
- resin
- mold
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、樹脂封止形半導体装置、特に短絡
事故が少なくかつ製造が容易な樹脂封止形半導体
装置の製造方法に関連する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a resin-sealed semiconductor device, particularly a resin-sealed semiconductor device that is less prone to short-circuit accidents and is easy to manufacture.
従来の技術
従来、一般的な電力用樹脂封止形半導体装置に
おいては、半導体チツプが接着された支持板の裏
面には封止樹脂が形成されていない。このため、
この半導体装置を外部放熱体に取付けるに際して
は、外部放熱体との間に絶縁シートを介在させな
ければならず、取付作業が煩雑になつた。そこ
で、支持板の裏面にも封止樹脂を形成する方法が
提案された。このような樹脂封止技術は、例え
ば、特開昭57−178352号公報や特開昭58−143538
号公報で開示されている。すなわち、リードフレ
ームの一部を構成する支持板上に半導体チツプを
電気伝導可能に接着したのち、半導体チツプは細
線で外部リードと接続される。次に、リードフレ
ームは金型に装着され、キヤビテイ内に融解樹脂
が圧入される。このとき、キヤビテイ内で支持板
が移動しないように、支持板の各側部に連結され
た外部リードと細条が金型で把持される。融解樹
脂が固化したのち、リードフレームが金型から取
外され、リードフレームの所定部分が切断され
る。特開昭57−178352号では、細条を折り曲げて
切断するために、封止樹脂の外面をまたぐように
して細条に小断面部を形成している。BACKGROUND OF THE INVENTION Conventionally, in general resin-sealed semiconductor devices for electric power, no sealing resin is formed on the back surface of a support plate to which a semiconductor chip is bonded. For this reason,
When attaching this semiconductor device to an external heat radiator, an insulating sheet must be interposed between the semiconductor device and the external heat radiator, making the mounting work complicated. Therefore, a method has been proposed in which a sealing resin is also formed on the back surface of the support plate. Such resin sealing technology is disclosed in, for example, Japanese Patent Application Laid-Open No. 57-178352 and Japanese Patent Application Laid-Open No. 58-143538.
It is disclosed in the publication no. That is, after a semiconductor chip is electrically conductively bonded onto a support plate constituting a part of a lead frame, the semiconductor chip is connected to external leads using thin wires. Next, the lead frame is attached to a mold, and molten resin is press-fitted into the cavity. At this time, the external leads and strips connected to each side of the support plate are gripped by the mold so that the support plate does not move within the cavity. After the molten resin has solidified, the lead frame is removed from the mold and a predetermined portion of the lead frame is cut. In JP-A-57-178352, in order to bend and cut the strip, a small cross section is formed in the strip so as to straddle the outer surface of the sealing resin.
発明が解決しようとする課題
しかし、細条の切断面が封止樹脂の外面に露出
することには変わりない。そこで、特開昭58−
143538号では、第１２図に示す通り、切断後の封
止樹脂の外面５０から突出した細条端部を化学エ
ツチング等の方法により除去し、封止樹脂の外面
５０から窪む位置５１に細条の先端を形成してい
た。しかしこの方法は、細条の一部を除去する付
加的な工程が必要となり、コストアツプを招い
た。しかも所望の化学エツチング等を量産的に行
うこと自体に新たな技術を要するので、実用的と
は言い難い。Problems to be Solved by the Invention However, the cut surfaces of the strips are still exposed to the outer surface of the sealing resin. Therefore, JP-A-58-
In No. 143538, as shown in FIG. 12, the ends of the strips protruding from the outer surface 50 of the sealing resin after cutting are removed by a method such as chemical etching, and a strip is formed at a recessed position 51 from the outer surface 50 of the sealing resin. It formed the tip of the ray. However, this method requires an additional step of removing a portion of the strips, resulting in increased costs. Moreover, mass production of the desired chemical etching requires a new technology, so it cannot be said to be practical.
そこで、本発明は上記問題点を解決する樹脂封
止形半導体装置の製造方法を提供することを目的
とする。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device that solves the above-mentioned problems.
課題を解決するための手段
本発明による樹脂封止形半導体装置の製造方法
によれば、支持板と、支持板の一端に連結された
外部リードと、支持板の他端に連結された細条と
を有し、支持板側で先細となるテーパ部及び該テ
ーパ部の先端部分から外側に張出す肩部が細条の
両側面に形成され、支持板上に半導体チツプが電
気的導通可能に装着されたリードフレームを準備
する工程と、細条の肩部及び前記テーパ部の少な
くとも一部が金型内のキヤビテイ形成面から実質
的に所定距離だけ内側に配置されるようにリード
フレームを金型に装着する工程と、金型のキヤビ
テイ内に融解樹脂を圧入する工程と、融解樹脂の
固化後、リードフレームを金型から取出す工程
と、細条にその導出方向への引張力を作用させ
て、細条の小断面部で細条を切断する工程とを含
む。Means for Solving the Problems According to the method of manufacturing a resin-sealed semiconductor device according to the present invention, a support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate are provided. A tapered portion tapered on the support plate side and a shoulder protruding outward from the tip of the tapered portion are formed on both sides of the strip, allowing electrical conduction of the semiconductor chip on the support plate. preparing a mounted lead frame and molding the lead frame such that at least a portion of the shoulder of the strip and the tapered portion are disposed a substantially predetermined distance inward from the cavity forming surface in the mold; A process of mounting the lead frame in a mold, a process of press-fitting the molten resin into the cavity of the mold, a process of taking out the lead frame from the mold after solidifying the molten resin, and a process of applying a tensile force to the strip in the direction of its extraction. and cutting the strip at a small cross-section portion of the strip.
作 用
支持板側で先細となるテーパ部及びテーパ部の
先端部分から外側に張出す肩部が細条の両側面に
形成され、小断面部が形成される。細条の引張破
断の際に、テーパ部の先端部分に引張応力が集中
して、細条の引張破断を容易に行うことができ
る。また、細条の破断時に、一対の肩部は樹脂に
対する引掛け部として作用するため、引張力に対
向する力を増大することができる。このため、引
張力を最小断面部に効率良く加えることができ、
細条の引張破断が容易となる。また、テーパ部が
形成されて先細となつた細条を引抜くので、引張
破断時に生じる樹脂へのダメージは十分に小さ
い。Function: A tapered portion tapered on the support plate side and a shoulder portion projecting outward from the tip of the tapered portion are formed on both sides of the strip, forming a small cross-section portion. When the strip is tensilely broken, tensile stress is concentrated at the tip of the tapered portion, making it easy to tensilely break the strip. Further, when the strip is broken, the pair of shoulders acts as a hook for the resin, so that the force opposing the tensile force can be increased. Therefore, tensile force can be efficiently applied to the smallest cross section,
Tensile breakage of the strip becomes easy. Furthermore, since the tapered portion is formed and a tapered strip is pulled out, the damage to the resin that occurs during tensile fracture is sufficiently small.
実施例
以下図面について、本発明の実施例を説明す
る。本発明で製造される樹脂封止形半導体装置
は、第１図に示すリードフレーム１から作られ
る。リードフレーム１は、トランジスタチツプ等
の半導体チツプ２がその一方の主面に半田付けさ
れた支持板３を有する。半導体チツプ２は、必要
に応じて保護コート４を形成するシリコン樹脂で
被覆される。支持板３には、コレクタリード５が
一体成形される。コレクタリード５は、ベースリ
ード６とエミツタリード７と共に外部リードと総
称され、タイバー８及び共通細条９により直角方
向で互いに連結される。ベースリード６とエミツ
タリード７は、それぞれアルミニウム線１０，１
１により半導体チツプ２の所定位置へ接続され
る。Embodiments Examples of the present invention will be described below with reference to the drawings. A resin-sealed semiconductor device manufactured according to the present invention is made from a lead frame 1 shown in FIG. The lead frame 1 has a support plate 3 on one main surface of which a semiconductor chip 2, such as a transistor chip, is soldered. The semiconductor chip 2 is coated with silicone resin forming a protective coat 4 if necessary. A collector lead 5 is integrally molded on the support plate 3. The collector lead 5, together with the base lead 6 and the emitter lead 7, are collectively referred to as an external lead, and are connected to each other at right angles by a tie bar 8 and a common strip 9. The base lead 6 and the emitter lead 7 are aluminum wires 10 and 1, respectively.
1 is connected to a predetermined position of the semiconductor chip 2.
支持板３には、コレクタリード５に対し反対側
へ伸びる一対の細条１２，１３が一体に成形され
る。外部リード及び細条１２，１３は支持板３よ
りも肉薄に形成されている。また、細条１２，１
３はその一方の主面が支持板３の一方の主面と同
一の平面上に位置するように上方に偏位してい
る。各細条１２，１３の外端は、共通細条１４に
より直角方向で互いに連結される。後工程で形成
される鎖線１５で示す封止樹脂の端面１６から所
定距離だけ内側に離れた位置の各細条１２，１３
には小断面部１７，１８が設けられる。小断面部
１７，１８には、後述の通り、種々の形状に形成
することができる。また、小断面部１７，１８に
は、細条の切断時に引張応力が集中する最小断面
部１７ａ，１８ａが形成される。 A pair of strips 12 and 13 extending toward the opposite side of the collector lead 5 are integrally formed on the support plate 3 . The external leads and strips 12, 13 are formed thinner than the support plate 3. Also, strip 12,1
3 is offset upward so that one main surface thereof is located on the same plane as one main surface of the support plate 3. The outer ends of each strip 12, 13 are connected to each other at right angles by a common strip 14. Each strip 12, 13 is located a predetermined distance inward from the end surface 16 of the sealing resin indicated by a chain line 15 formed in a subsequent process.
are provided with small cross-section portions 17 and 18. The small cross-section portions 17 and 18 can be formed into various shapes as described later. Further, the small cross-section portions 17 and 18 are formed with minimum cross-section portions 17a and 18a on which tensile stress is concentrated when cutting the strip.
なお、第１図ではトランジスタ１個分の支持板
３、外部リード及び細条１２，１３を有するリー
ドフレーム１を示すが、実際には、多数の支持
板、外部リード及び細条がタイバー８と共通細条
９，１４により並行に支持された金属製リードフ
レームが使用される。 Although FIG. 1 shows a lead frame 1 having a support plate 3, external leads, and strips 12 and 13 for one transistor, in reality, a large number of support plates, external leads, and strips are connected to tie bars 8. Metal lead frames are used which are supported in parallel by common strips 9,14.
リードフレーム１は、第２図及び第３図に示す
金型１９内に装着される。第２図はコレクタリー
ド５の中心線に沿う断面を示し、第３図は細条１
３の中心線に沿う断面を示す。金型１９は、下型
２０と上型２１とで構成され、リードフレーム１
を収容するキヤビテイ２２を形成する。小断面部
のうちの最小断面部１７ａ，１８ａは、金型のキ
ヤビテイ形成面からｌだけ内側に配置される。 The lead frame 1 is mounted in a mold 19 shown in FIGS. 2 and 3. 2 shows a cross section along the center line of the collector lead 5, and FIG. 3 shows the strip 1.
A cross section taken along the center line of No. 3 is shown. The mold 19 is composed of a lower mold 20 and an upper mold 21, and the lead frame 1
A cavity 22 is formed to accommodate the. The smallest cross-section parts 17a and 18a of the small cross-section parts are arranged inward by l from the cavity forming surface of the mold.
上述の通り金型１９にリードフレーム１を装着
したのち、キヤビテイ２２内に熱硬化性の融解エ
ポキシ樹脂を公知のトランスフアモールド法によ
りゲート（図示せず）から圧入し、支持板３を含
むリードフレーム１の一部分を樹脂１５により封
止する。 After the lead frame 1 is mounted on the mold 19 as described above, a thermosetting molten epoxy resin is press-fitted into the cavity 22 through a gate (not shown) by a known transfer molding method, and the leads including the support plate 3 are formed. A portion of the frame 1 is sealed with resin 15.
樹脂１５が固化したのち、第４図に示すリード
フレーム１を金型１９から取出す。次に、樹脂１
５から導出された細条１２，１３を導出方向に引
張ることにより、小断面部１７，１８の最小断面
部１７ａ，１８ａで切断し、共通細条１４と細条
１２，１３の一部を除去する。その後、各外部リ
ードを連結するタイバー８と共通細条９もプレス
切断により除去する。このように製造した半導体
装置の１例を第５図に示す。細条１２，１３が導
出されていた樹脂１５に孔２３，２４が形成され
る。本出願人はこの発明による製造方法で実際に
樹脂封止形半導体装置を製造したが、孔２３，２
４の形状は細条１２，１３が抜けた跡にほぼ等し
く形成された。また、細条１２，１３は支持板３
よりも肉薄に形成されており、最小断面部１７
ａ，１８の断面積は十分に小さいから、引抜きに
よつて容易に破断できた。更に、細条１２，１３
はその上面が支持板３の上面の延長上に位置する
ように形成されており、コレクタリード５のよう
に支持板３の上方までは偏位していないので、細
条１２，１３の引張破断時に細条１２，１３の周
辺の樹脂１５に特性変動および外観不良の点で実
用上問題にすべきクラツク、そり等の異常は全く
発生しなかつた。 After the resin 15 has solidified, the lead frame 1 shown in FIG. 4 is taken out from the mold 19. Next, resin 1
By pulling the strips 12, 13 derived from the strips 12, 13 in the direction of extraction, they are cut at the minimum cross-section portions 17a, 18a of the small cross-section portions 17, 18, and the common strip 14 and part of the strips 12, 13 are removed. do. Thereafter, the tie bars 8 and common strips 9 connecting each external lead are also removed by press cutting. An example of a semiconductor device manufactured in this manner is shown in FIG. Holes 23, 24 are formed in the resin 15 from which the strips 12, 13 were led out. The present applicant actually manufactured a resin-sealed semiconductor device using the manufacturing method according to the present invention.
The shape of No. 4 was formed almost equal to the trace where the strips 12 and 13 were removed. Further, the strips 12 and 13 are connected to the support plate 3.
It is formed thinner than the smallest cross section 17.
Since the cross-sectional area of a, 18 was sufficiently small, it could be easily broken by drawing. Furthermore, Articles 12 and 13
is formed so that its upper surface is located on an extension of the upper surface of the support plate 3, and is not deviated above the support plate 3 like the collector lead 5, so that the tensile fracture of the strips 12 and 13 Abnormalities such as cracks and warpage, which should be a practical problem in terms of characteristic fluctuations and poor appearance, did not occur in the resin 15 around the strips 12 and 13 at all.
第６図に示す通り、細条１３の端面２５は、樹
脂の端面１６より長さl1だけ内側に窪み、そこに
孔２４が形成される。また、細条１２，１３は上
述のように支持板３の上面側に偏位しており、細
条１２，１３の下面と支持板３の下面との間に段
差が形成されている。したがつて、支持板３の下
面側の樹脂１５を肉薄に形成しても、細条１２，
１３の外部放熱体２６からの高さl2を大きくとる
ことができる。結果として、細条１２，１３から
外部放熱体２６までの沿面距離l0はl0＝l1＋l2と長
くなり、絶縁不良が防止される。更に、孔２３，
２４が小さいため、他の素子、キヤビテイまたは
人体等を含む周囲と細条１２，１３との接触によ
る短絡事故も防止される。孔２３，２４には、絶
縁不良を完全に防止するため、樹脂を充填しても
よい。しかし、この樹脂を充填しなくても実用上
は問題はない。また、放熱性の点においても、支
持板３が肉厚に形成されているし、支持板３の下
面側の樹脂１５も十分に肉薄になつているので、
支持板３の下面側が露出したタイプの半導体装置
と同程度の放熱効果を期待できる。 As shown in FIG. 6, the end face 25 of the strip 13 is recessed inward by a length l 1 from the end face 16 of the resin, and a hole 24 is formed there. Furthermore, as described above, the strips 12 and 13 are offset toward the upper surface of the support plate 3, and a step is formed between the lower surface of the strips 12 and 13 and the lower surface of the support plate 3. Therefore, even if the resin 15 on the lower surface side of the support plate 3 is made thin, the strips 12,
13 from the external heat sink 26 can be increased. As a result, the creepage distance l 0 from the strips 12, 13 to the external heat radiator 26 is increased to l 0 =l 1 +l 2 , thereby preventing insulation defects. Furthermore, the hole 23,
Since 24 is small, short-circuit accidents due to contact between the strips 12 and 13 with other elements, cavities, or the surroundings including the human body are also prevented. The holes 23 and 24 may be filled with resin to completely prevent insulation defects. However, there is no practical problem even if this resin is not filled. In addition, in terms of heat dissipation, the support plate 3 is formed thickly, and the resin 15 on the lower surface side of the support plate 3 is also sufficiently thin.
A heat dissipation effect comparable to that of a semiconductor device in which the lower surface side of the support plate 3 is exposed can be expected.
また、本実施例では、小断面部１７，１８が細
条１２，１３の両側に設けられた一対のテーパ部
３０と、テーパ部３０の先端部に形成された一対
の肩部３１から構成されている。テーパ部３０は
支持板３側で先細になつており、肩部３１はテー
パ部３０の外側に向かつて張出している。最小断
面部１７ａ，１８ａはテーパ部３０と肩部３１の
接続部に形成される。細条１２，１３に引張力を
加えると、最小断面部１７ａ，１８ａに引張応力
が集中して細条が破断される。このとき、一対の
肩部３１は樹脂１５に対する引掛け部として作用
するため、引張力に対向する力が大きくなる。こ
のため、引張力を最小断面部１７ａ，１８ａに効
率良く加えることができ、細条１２，１３の引張
破断が容易となる。また、テーパ部３０が形成さ
れて先細となつた細条１２，１３を引抜くので、
引張破断時に生じる樹脂１５へのダメージも十分
に小さくできる。 Further, in this embodiment, the small cross-section portions 17 and 18 are composed of a pair of tapered portions 30 provided on both sides of the strips 12 and 13, and a pair of shoulder portions 31 formed at the tip portions of the tapered portions 30. ing. The tapered portion 30 is tapered on the side of the support plate 3, and the shoulder portion 31 protrudes toward the outside of the tapered portion 30. The minimum cross-section portions 17a and 18a are formed at the connection portion between the tapered portion 30 and the shoulder portion 31. When a tensile force is applied to the strips 12 and 13, the tensile stress concentrates on the smallest cross-section portions 17a and 18a, causing the strips to break. At this time, since the pair of shoulders 31 acts as hooks for the resin 15, the force opposing the tensile force increases. Therefore, tensile force can be efficiently applied to the smallest cross-section portions 17a, 18a, and the strips 12, 13 can be easily tensile broken. In addition, since the tapered portion 30 is formed and the tapered strips 12 and 13 are pulled out,
Damage to the resin 15 that occurs during tensile rupture can also be sufficiently reduced.
第７図〜第１１図は細条の小断面部の変形例を
示す。第７図の例では、内側に先細のテーパ部３
０を樹脂の端面１６まで細条１３に形成しかつ引
張力に対向する肩部３１が設けられる。第８図は
テーパ部３０が樹脂外部まで伸びる例を示す。第
９図は肩部が３１と３４で２段の例を示し、第１
０図は細条１３に加えられる引張力に対向する力
を更に強化するため、樹脂が充填される孔３５を
小断面部分より支持板側の細条１３に形成する例
を示し、第１１図は同様の理由で細条１３にコイ
ニング即ち線状の切込３６を形成した例を示す。 7 to 11 show modifications of the small cross-section of the strip. In the example shown in FIG. 7, the tapered portion 3 tapered inwardly
0 to the end face 16 of the resin in the strip 13 and is provided with a shoulder 31 facing the tensile force. FIG. 8 shows an example in which the tapered portion 30 extends to the outside of the resin. Figure 9 shows an example of two stages with shoulders 31 and 34, and the first
0 shows an example in which holes 35 filled with resin are formed in the strip 13 closer to the support plate than the small cross-section portion in order to further strengthen the force opposing the tensile force applied to the strip 13, and FIG. shows an example in which coining, that is, a linear cut 36 is formed in the strip 13 for the same reason.
なお、上記実施例ではトランジスタについて説
明したが、この説明はダイオード、サイリスタ等
他の半導体装置にも応用できることは明らかであ
る。 Note that although the above embodiments have been explained regarding transistors, it is clear that this explanation can also be applied to other semiconductor devices such as diodes and thyristors.
発明の効果
上述の通り、この発明による樹脂封止型半導体
装置の製造方法によれば、封止樹脂の内部に細条
の小断面部が実質的に位置するようにリードフレ
ームを樹脂封止したのち、この小断面部において
細条を引張力によつて切断する工程を採用した。
このため、細条の切断後に更に細条の端面を内側
に窪ませる工程を必要とせず、細条の切断のみで
簡単に半導体装置の短絡事故や絶縁不良を確実に
防止できる優れた効果が得られる。また、細条の
引張破断を容易にかつ樹脂へのダメージを最小限
に抑えて、細条の引張破断を容易に行える。した
がつて、半導体装置を大量生産する場合、製造コ
ストの低減や良品率の向上に寄与するところ大で
ある。Effects of the Invention As described above, according to the method of manufacturing a resin-sealed semiconductor device according to the present invention, the lead frame is resin-sealed so that the small cross-section of the strip is substantially located inside the sealing resin. Later, a process was adopted in which the strip was cut at this small cross-sectional area using tensile force.
For this reason, there is no need to further indent the end faces of the strips after cutting them, and an excellent effect can be obtained in which short-circuit accidents and insulation defects in semiconductor devices can be reliably prevented by simply cutting the strips. It will be done. Further, the thin strips can be easily tensile broken while minimizing damage to the resin. Therefore, when mass producing semiconductor devices, it greatly contributes to reducing manufacturing costs and improving the rate of non-defective products.
第１図は本発明による樹脂封止型半導体装置の
製造方法に使用するリードフレームの平面図、第
２図及び第３図はこのリードフレームを金型に装
着して樹脂封止したときのそれぞれコレクタリー
ド及び細条の中心線に沿う断面図、第４図は金型
から取出されたリードフレームの斜視図、第５図
は本発明による樹脂封止型半導体装置の製造方法
で作られた半導体装置の斜視図、第６図は細条切
断部の部分的拡大断面図、第７図、第８図、第９
図、第１０図及び第１１図は細条の小断面部に関
する種々の形状を示す断面図、第１２図は従来の
樹脂封止形半導体装置の例を示す破砕断面図であ
る。
１……リードフレーム、２……半導体チツプ、
３……支持板、５，６，７……外部リード、１
２，１３……細条、１５……封止樹脂、１７，１
８……小断面部、１７ａ，１８ａ……小断面部の
うちの最小断面部、１９……金型、２２……キヤ
ビテイ、３０……テーパ部、３１……肩部。
FIG. 1 is a plan view of a lead frame used in the method for manufacturing a resin-sealed semiconductor device according to the present invention, and FIGS. 2 and 3 show the lead frame mounted in a mold and sealed with resin. 4 is a perspective view of the lead frame taken out from the mold, and FIG. 5 is a semiconductor manufactured by the method for manufacturing a resin-sealed semiconductor device according to the present invention. A perspective view of the device, FIG. 6 is a partially enlarged sectional view of the strip cutting section, FIGS. 7, 8, and 9.
10 and 11 are cross-sectional views showing various shapes of small cross-section portions of strips, and FIG. 12 is a fragmented cross-sectional view showing an example of a conventional resin-sealed semiconductor device. 1...Lead frame, 2...Semiconductor chip,
3... Support plate, 5, 6, 7... External lead, 1
2,13...Stripes, 15...Sealing resin, 17,1
8...Small cross-section part, 17a, 18a...Minimum cross-section part among the small cross-section parts, 19...Mold, 22...Cavity, 30...Tapered part, 31...Shoulder part.
Claims (1)
リードと、前記支持板の他端に連結された細条と
を有し、前記支持板側で先細となるテーパ部及び
該テーパ部の先端部分から外側に張出す肩部が前
記細条の両側面に形成され、前記支持板上に半導
体チツプが電気的導通可能に装着されたリードフ
レームを準備する工程と、 前記細条の肩部及び前記テーパ部の少なくとも
一部が金型内のキヤビテイ形成面から実質的に所
定距離だけ内側に配置されるように前記リードフ
レームを金型に装着する工程と、 前記金型のキヤビテイ内に融解樹脂を圧入する
工程と、 前記融解樹脂の固化後、前記リードフレームを
前記金型から取出す工程と、 前記細条にその導出方向への引張力を作用させ
て、前記細条の小断面部で前記細条を切断する工
程と、 を含むことを特徴とする樹脂封止形半導体装置の
製造方法。[Scope of Claims] 1. A tapered tapered tape having a support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate, and tapered on the side of the support plate. a step of preparing a lead frame in which a semiconductor chip is mounted on the support plate in an electrically conductive manner, the lead frame having a shoulder portion extending outward from a tip portion of the tapered portion on both sides of the strip; mounting the lead frame in a mold such that at least a portion of the shoulder portion of the strip and the tapered portion are disposed inward by a substantially predetermined distance from a cavity forming surface in the mold; press-fitting the molten resin into the cavity of the mold; taking out the lead frame from the mold after solidifying the molten resin; and applying a tensile force to the strip in the direction of its extraction. A method for manufacturing a resin-sealed semiconductor device, comprising: cutting the strip at a small cross-section portion of the strip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1086911A JPH0249444A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1086911A JPH0249444A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59159047A Division JPS6156420A (en) | 1984-07-31 | 1984-07-31 | Manufacture of resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0249444A JPH0249444A (en) | 1990-02-19 |
| JPH0451976B2 true JPH0451976B2 (en) | 1992-08-20 |
Family
ID=13900028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1086911A Granted JPH0249444A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249444A (en) |
-
1989
- 1989-04-07 JP JP1086911A patent/JPH0249444A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0249444A (en) | 1990-02-19 |
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