JPH0455042U - - Google Patents
Info
- Publication number
- JPH0455042U JPH0455042U JP9830890U JP9830890U JPH0455042U JP H0455042 U JPH0455042 U JP H0455042U JP 9830890 U JP9830890 U JP 9830890U JP 9830890 U JP9830890 U JP 9830890U JP H0455042 U JPH0455042 U JP H0455042U
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- phase shifter
- photomask
- light
- alignment accuracy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 claims description 19
- 230000010363 phase shift Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Description
第１図は本考案の１実施例の位相シフト層を有
するフオトマスクのパターンの配置を示す図、第
２図は位相シフター膜厚測定用パターンの１例の
構成を示す図、第３図はアライメント精度測定用
パターンの１例の構成を示す図、第４図は別の実
施例のフオトマスクのパターンの配置を示す図、
第５図は第４図における位相シフター膜厚測定用
補助パターンの構成を示す図、第６図は第４図に
おけるアライメント精度測定用遮光パターンの構
成を示す図、第７図はさらに別の実施例のフオト
マスクのパターンの配置を示す図、第８図は第７
図における遮光バーニアパターンの平面図、第９
図は第７図における位相シフター膜厚測定用パタ
ーンの構成を示す図、第１０図は第７図における
位相シフターバーニアパターンの平面図、第１１
図は位相シフト法の原理を示す図、第１２図は従
来法を示す図である。
１……基板、２……遮光膜、３……位相シフタ
ー、４……入射光、５……主パターン、６……ア
ライメントマーク、７……アライメント精度測定
用パターン、８……位相シフター膜厚測定用パタ
ーン、９……位相シフター膜厚測定用補助パター
ン、１０……位相シフター膜厚測定用パターン本
体、１１……アライメント精度測定用遮光パター
ン、１２……アライメント精度測定用位相シフタ
ーパターン、１３……遮光バーニアパターン、１
４……位相シフターバーニアパターン。
FIG. 1 is a diagram showing the arrangement of a pattern of a photomask having a phase shift layer according to an embodiment of the present invention, FIG. 2 is a diagram showing the configuration of an example of a pattern for measuring the phase shifter film thickness, and FIG. 3 is a diagram showing the alignment. FIG. 4 is a diagram showing the configuration of one example of the accuracy measurement pattern; FIG. 4 is a diagram showing the arrangement of the photomask pattern of another example;
FIG. 5 is a diagram showing the configuration of the auxiliary pattern for measuring the phase shifter film thickness in FIG. 4, FIG. 6 is a diagram showing the configuration of the light-shielding pattern for measuring alignment accuracy in FIG. 4, and FIG. 7 is a diagram showing another implementation. A diagram showing the pattern arrangement of an example photomask, FIG.
Plan view of the light-shielding vernier pattern in the figure, No. 9
The figure shows the configuration of the phase shifter film thickness measurement pattern in FIG. 7, FIG. 10 is a plan view of the phase shifter vernier pattern in FIG.
The figure shows the principle of the phase shift method, and FIG. 12 shows the conventional method. 1... Substrate, 2... Light shielding film, 3... Phase shifter, 4... Incident light, 5... Main pattern, 6... Alignment mark, 7... Alignment accuracy measurement pattern, 8... Phase shifter film Thickness measurement pattern, 9... Auxiliary pattern for phase shifter film thickness measurement, 10... Phase shifter film thickness measurement pattern body, 11... Light shielding pattern for alignment accuracy measurement, 12... Phase shifter pattern for alignment accuracy measurement, 13...Shading vernier pattern, 1
4...Phase shifter vernier pattern.
Claims (1)
する透明領域間に位相差を与える位相シフターと
遮光パターンとを有するフオトマスクにおいて、
主パターンにかからない部分に、位相シフターの
膜厚を測定するための位相シフター膜厚測定用パ
ターンと、遮光パターンと位相シフターパターン
とのアライメント精度を測定するためのアライメ
ント精度測定用パターンとを設けたことを特徴と
する位相シフト層を有するフオトマスク。 (2) 前記位相シフター膜厚測定用パターンは、
遮光パターンの一部をなす補助パターン上に形成
され、位相シフターの一部をなす膜厚測定用パタ
ーンから構成されていることを特徴とする請求項
１記載の位相シフト層を有するフオトマスク。 (3) 前記位相シフター膜厚測定用パターンは、
フオトマスク基板上に直接形成され、位相シフタ
ーの一部をなす膜厚測定用パターンから構成され
ていることを特徴とする請求項１記載の位相シフ
ト層を有するフオトマスク。 (4) 前記アライメント精度測定用パターンは、
遮光パターンの一部をなすアライメント精度測定
用遮光パターンと、位相シフターの一部をなすア
ライメント精度測定用位相シフターパターンとか
らなることを特徴とする請求項１から３の何れか
１項記載の位相シフト層を有するフオトマスク。 (5) 前記アライメント精度測定用遮光パターン
が所定間隔の遮光バーニアパターンからなり、前
記アライメント精度測定用位相シフターパターン
が前記間隙と僅かに異なる間隙の位相シフターバ
ーニアパターンからなることを特徴とする請求項
４記載の位相シフト層を有するフオトマスク。 (6) 前記位相シフター膜厚測定用パターンと前
記アライメント精度測定用パターンとが同一のパ
ターン上に形成されていることを特徴とする請求
項１から５の何れか１項記載の位相シフト層を有
するフオトマスク。[Claims for Utility Model Registration] (1) A photomask having a phase shifter and a light-shielding pattern that provide a phase difference between mutually adjacent transparent regions that are separated by a light-shielding region,
A phase shifter film thickness measurement pattern for measuring the film thickness of the phase shifter and an alignment accuracy measurement pattern for measuring the alignment accuracy between the light-shielding pattern and the phase shifter pattern were provided in a portion not covered by the main pattern. A photomask having a phase shift layer, characterized in that: (2) The phase shifter film thickness measurement pattern is
2. The photomask having a phase shift layer according to claim 1, further comprising a film thickness measurement pattern formed on an auxiliary pattern forming a part of a light shielding pattern and forming a part of a phase shifter. (3) The phase shifter film thickness measurement pattern is
2. The photomask having a phase shift layer according to claim 1, wherein the photomask is formed directly on a photomask substrate and is composed of a film thickness measurement pattern forming a part of a phase shifter. (4) The alignment accuracy measurement pattern is
The phase according to any one of claims 1 to 3, characterized in that the phase shifter comprises a light-shielding pattern for measuring alignment accuracy that forms part of a light-shielding pattern, and a phase shifter pattern for measuring alignment accuracy that forms part of a phase shifter. A photomask with a shifting layer. (5) The light-shielding pattern for alignment accuracy measurement is comprised of a light-shielding vernier pattern with a predetermined interval, and the phase shifter pattern for alignment accuracy measurement is comprised of a phase shifter vernier pattern with a gap slightly different from the gap. 4. A photomask comprising the phase shift layer according to 4. (6) The phase shift layer according to any one of claims 1 to 5, wherein the phase shifter film thickness measurement pattern and the alignment accuracy measurement pattern are formed on the same pattern. Photo mask with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9830890U JP2551102Y2 (en) | 1990-09-19 | 1990-09-19 | Photomask having phase shift layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9830890U JP2551102Y2 (en) | 1990-09-19 | 1990-09-19 | Photomask having phase shift layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0455042U true JPH0455042U (en) | 1992-05-12 |
| JP2551102Y2 JP2551102Y2 (en) | 1997-10-22 |
Family
ID=31839385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9830890U Expired - Lifetime JP2551102Y2 (en) | 1990-09-19 | 1990-09-19 | Photomask having phase shift layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2551102Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308712A (en) * | 1993-02-17 | 1994-11-04 | Nec Corp | Phase shift mask and its inspection method |
-
1990
- 1990-09-19 JP JP9830890U patent/JP2551102Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06308712A (en) * | 1993-02-17 | 1994-11-04 | Nec Corp | Phase shift mask and its inspection method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2551102Y2 (en) | 1997-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |