JPH0457638B2 - - Google Patents
Info
- Publication number
- JPH0457638B2 JPH0457638B2 JP62106046A JP10604687A JPH0457638B2 JP H0457638 B2 JPH0457638 B2 JP H0457638B2 JP 62106046 A JP62106046 A JP 62106046A JP 10604687 A JP10604687 A JP 10604687A JP H0457638 B2 JPH0457638 B2 JP H0457638B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- growth chamber
- molecular beam
- chamber
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62106046A JPS63270389A (ja) | 1987-04-28 | 1987-04-28 | 分子線結晶成長装置の処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62106046A JPS63270389A (ja) | 1987-04-28 | 1987-04-28 | 分子線結晶成長装置の処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63270389A JPS63270389A (ja) | 1988-11-08 |
| JPH0457638B2 true JPH0457638B2 (de) | 1992-09-14 |
Family
ID=14423690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62106046A Granted JPS63270389A (ja) | 1987-04-28 | 1987-04-28 | 分子線結晶成長装置の処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63270389A (de) |
-
1987
- 1987-04-28 JP JP62106046A patent/JPS63270389A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63270389A (ja) | 1988-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2012238641A (ja) | ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法 | |
| US6596091B1 (en) | Method for sweeping contaminants from a process chamber | |
| US20180076030A1 (en) | SiC FILM FORMING METHOD AND SiC FILM FORMING APPARATUS | |
| JP4677088B2 (ja) | グラファイトナノファイバー薄膜形成用熱cvd装置 | |
| JPH0355840A (ja) | 縦型処理装置における処理方法 | |
| JPS63270389A (ja) | 分子線結晶成長装置の処理方法 | |
| JPH0517879Y2 (de) | ||
| JPH05140743A (ja) | 真空処理装置 | |
| JPH0645257A (ja) | 半導体薄膜形成方法 | |
| JP2817356B2 (ja) | 分子線結晶成長装置およびそれを用いる結晶成長方法 | |
| JP3058655B2 (ja) | ウェーハ拡散処理方法及びウェーハ熱処理方法 | |
| JP3952556B2 (ja) | 分子線エピタキシ装置 | |
| JPS63270388A (ja) | 分子線結晶成長装置 | |
| JPH04219391A (ja) | 分子線結晶成長装置 | |
| JPH0355838A (ja) | 縦型処理装置 | |
| JPH0693427A (ja) | 真空成膜方法 | |
| JP3388654B2 (ja) | 真空処理方法と装置 | |
| JPH04188721A (ja) | 縦型熱処理装置 | |
| JPH01145806A (ja) | 有機金属気相成長装置 | |
| JPS62143419A (ja) | 真空処理装置 | |
| JPH06177073A (ja) | エッチング装置 | |
| JPH01302719A (ja) | 気相結晶成長装置 | |
| JPH0243720A (ja) | 分子線エピタキシャル成長方法 | |
| JP2000114186A (ja) | 半導体製造装置及びウエハ処理方法 | |
| JPS62298116A (ja) | 処理装置 |