JPH0459437U - - Google Patents
Info
- Publication number
- JPH0459437U JPH0459437U JP10140490U JP10140490U JPH0459437U JP H0459437 U JPH0459437 U JP H0459437U JP 10140490 U JP10140490 U JP 10140490U JP 10140490 U JP10140490 U JP 10140490U JP H0459437 U JPH0459437 U JP H0459437U
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- diameter
- low melting
- glass layer
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の要部詳細図、第３図は第１図の
動作説明図、第４図は従来より一般に使用されて
いる従来例の構成説明図、第５図は第４図の要部
詳細図、第６図は第４図の動作説明図である。
１……シリコン半導体センサチツプ、２……ガ
ラス基板、３……支持台、４……低融点ガラス層
。
FIG. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention,
Figure 2 is a detailed view of the main parts of Figure 1, Figure 3 is an explanatory diagram of the operation of Figure 1, Figure 4 is an explanatory diagram of the configuration of a conventional example commonly used, and Figure 5 is Figure 4. FIG. 6 is an explanatory diagram of the operation of FIG. 4. DESCRIPTION OF SYMBOLS 1...Silicon semiconductor sensor chip, 2...Glass substrate, 3...Support stand, 4...Low melting point glass layer.
Claims (1)
た金属よりなる支持部と を具備する半導体圧力計において、 前記低融点ガラス層の直径をＡ、前記支持部の
直径をＢ、前記低融点ガラス層で接合される前記
ガラス基板の直径をＣとするときに、ＡとＢとＣ
との関係がＢ≧Ａ≧Ｃとなるように構成された事
を特徴とする半導体圧力計。[Scope of Claim for Utility Model Registration] A semiconductor pressure gauge comprising a sensor chip made of a silicon semiconductor, a glass substrate holding the sensor chip, and a support part made of metal whose one end is bonded to the substrate with a low melting point glass layer. , where A is the diameter of the low melting point glass layer, B is the diameter of the supporting portion, and C is the diameter of the glass substrate bonded by the low melting point glass layer, A, B, and C.
A semiconductor pressure gauge characterized in that the relationship between B≧A≧C is satisfied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10140490U JPH0459437U (en) | 1990-09-27 | 1990-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10140490U JPH0459437U (en) | 1990-09-27 | 1990-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459437U true JPH0459437U (en) | 1992-05-21 |
Family
ID=31844819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10140490U Pending JPH0459437U (en) | 1990-09-27 | 1990-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459437U (en) |
-
1990
- 1990-09-27 JP JP10140490U patent/JPH0459437U/ja active Pending
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