JPS6336038U - - Google Patents
Info
- Publication number
- JPS6336038U JPS6336038U JP1986129216U JP12921686U JPS6336038U JP S6336038 U JPS6336038 U JP S6336038U JP 1986129216 U JP1986129216 U JP 1986129216U JP 12921686 U JP12921686 U JP 12921686U JP S6336038 U JPS6336038 U JP S6336038U
- Authority
- JP
- Japan
- Prior art keywords
- bonded
- base electrode
- plate
- solder
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/381—Auxiliary members
Landscapes
- Die Bonding (AREA)
Description
第1図は本考案に係る半導体装置の一実施例を
示す図、第2図は従来例を示す図である。
1……半導体素子、2……ベース電極、3……
支持板、3a……モリブデン板或いはタングステ
ン板、3b……金属板、3c……硬鑞、4,4′
……軟鑞。
FIG. 1 is a diagram showing an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a diagram showing a conventional example. 1... Semiconductor element, 2... Base electrode, 3...
Support plate, 3a...Molybdenum plate or tungsten plate, 3b...Metal plate, 3c...Hard brazing, 4, 4'
...Soft solder.
Claims (1)
、該支持板上に前記半導体素子を鑞材により接着
してなる半導体装置において、前記支持板が軟鑞
により前記半導体素子に接着されるモリブデン板
、或いはタングステン板と、軟鑞により前記ベー
ス電極に接着される前記ベース電極と等しいが近
い熱膨張係数をもつ材質の金属板と、これらの間
を接着する硬鑞又は溶接部とからなることを特徴
とする半導体装置。 A semiconductor device in which a support plate is interposed between a base electrode and a semiconductor element, and the semiconductor element is bonded onto the support plate with a solder, a molybdenum plate in which the support plate is bonded to the semiconductor element with a soft solder; Alternatively, it is characterized by comprising a tungsten plate, a metal plate made of a material having a coefficient of thermal expansion equal to but close to that of the base electrode, which is bonded to the base electrode with soft solder, and hard solder or a welded portion bonded between them. semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986129216U JPS6336038U (en) | 1986-08-25 | 1986-08-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986129216U JPS6336038U (en) | 1986-08-25 | 1986-08-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6336038U true JPS6336038U (en) | 1988-03-08 |
Family
ID=31025596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986129216U Pending JPS6336038U (en) | 1986-08-25 | 1986-08-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6336038U (en) |
-
1986
- 1986-08-25 JP JP1986129216U patent/JPS6336038U/ja active Pending
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