JPH0461507B2 - - Google Patents
Info
- Publication number
- JPH0461507B2 JPH0461507B2 JP60213720A JP21372085A JPH0461507B2 JP H0461507 B2 JPH0461507 B2 JP H0461507B2 JP 60213720 A JP60213720 A JP 60213720A JP 21372085 A JP21372085 A JP 21372085A JP H0461507 B2 JPH0461507 B2 JP H0461507B2
- Authority
- JP
- Japan
- Prior art keywords
- external
- external lead
- welding
- contact
- external terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor device.
従来、半導体整流装置等として使用される半導
体装置の外部リード１と外部端子２との接続は、
第６図Ａ，Ｂに示す如く、半導体素子（図示せ
ず）の電極に接続された外部リード１に、外部端
子２の突起状の接点部３を接触させることにより
行われている。而して、外部リード１と外部端子
２との接続は、第７図に示す如く、両者を溶接機
の電極４ａ，４ｂで加圧状態で挾持して溶接する
ことにより行われている。しかしながら溶接時に
外部リード１が変形して外部端子２と接点部３以
外の箇所５ａ，５ｂで接触する。このため、正常
な溶接がなされない。また、溶接機の電極４ａ，
４ｂが外部リード１や外部端子２と接続する事故
が発生し、正常な溶接がなされない。また、電極
のいたみも大きい問題があつた。また、溶接後の
外部リード１と外部端子２との接続は、接点部３
以外でも行われることになり、強度（引強、振
動、熱衝撃に対する）テストなどに対する機械的
強度が弱い問題があつた。
Conventionally, the connection between the external lead 1 and the external terminal 2 of a semiconductor device used as a semiconductor rectifier, etc. is as follows.
As shown in FIGS. 6A and 6B, this is carried out by bringing a protruding contact portion 3 of an external terminal 2 into contact with an external lead 1 connected to an electrode of a semiconductor element (not shown). As shown in FIG. 7, the connection between the external lead 1 and the external terminal 2 is achieved by welding them by sandwiching them under pressure with electrodes 4a and 4b of a welding machine. However, during welding, the external lead 1 is deformed and comes into contact with the external terminal 2 at locations 5a and 5b other than the contact portion 3. For this reason, normal welding cannot be performed. In addition, the electrode 4a of the welding machine,
4b may connect with the external lead 1 or the external terminal 2, and normal welding cannot be performed. In addition, damage to the electrodes was a major problem. In addition, the connection between the external lead 1 and the external terminal 2 after welding is made at the contact part 3.
However, there was a problem that the mechanical strength was weak against strength tests (for tensile strength, vibration, and thermal shock).
本発明は、接点部の溶接強度の向上及び溶接機
の電極の長寿命化を達成した半導体装置を提供す
ることをその目的とするものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device in which the welding strength of the contact portion is improved and the life of the electrode of a welding machine is extended.
本発明は、外部端子に外部リードとの接続部以
外で接触する面積を低減するための切欠部を設け
たことにより、接点部の溶接強度の向上及び溶接
機の電極の長寿命化を達成した半導体装置であ
る。
The present invention improves the welding strength of the contact part and extends the life of the welding machine's electrode by providing a notch in the external terminal to reduce the contact area other than the connection part with the external lead. It is a semiconductor device.
以下、本発明の実施例について図面を参照して
説明する。第１図は、本発明の一実施例の斜視
図、第２図は、同実施例の内部を示す断面図であ
る。図中１０は、アルミニウム基板である。アル
ミニウム基板１０には、所定の半導体素子１１
ａ，１１ｂを収容した外囲器１２が設けられてい
る。半導体素子１１ａ，１１ｂは、モールド樹脂
１３に封止された状態で外囲器１２内に収容され
ている。外囲器１２上には、ターミナルホルダー
１４が設けられている。ターミナルホルダー１４
の開口部にて露出したモールド樹脂１３上には、
外部端子１５である入力端子１５ａ，１５ｂが導
出している。これらの外部端子１５は、一端部が
半導体素子１１ａ，１１ｂの電極に接続した外部
リード１６に接続している。一方の半導体素子１
１ａは、第３図に示す如く、アルミニウム基板１
０上に導体パターン１７ａを介して装着されてい
る。他方の半導体素子１１ｂは、アルミニウム基
板１０上に溶射にて形成された絶縁層１８、この
絶縁層１８上に設けられた導体パターン１７ｂ上
に装着されている。なお、同図中１９は、アルミ
ニウム基板１０上に導体パターン１７ｃを介して
装着されたグランド端子、２０は、出力電極であ
る。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of an embodiment of the present invention, and FIG. 2 is a sectional view showing the inside of the embodiment. 10 in the figure is an aluminum substrate. A predetermined semiconductor element 11 is mounted on the aluminum substrate 10.
An envelope 12 is provided that accommodates the elements a and 11b. The semiconductor elements 11a and 11b are housed in an envelope 12 while being sealed in a molded resin 13. A terminal holder 14 is provided on the envelope 12. Terminal holder 14
On the mold resin 13 exposed at the opening,
Input terminals 15a and 15b, which are external terminals 15, are led out. These external terminals 15 are connected to external leads 16 whose one ends are connected to the electrodes of the semiconductor elements 11a and 11b. One semiconductor element 1
1a is an aluminum substrate 1 as shown in FIG.
0 via a conductor pattern 17a. The other semiconductor element 11b is mounted on an insulating layer 18 formed by thermal spraying on the aluminum substrate 10 and a conductor pattern 17b provided on the insulating layer 18. In the figure, 19 is a ground terminal mounted on the aluminum substrate 10 via a conductor pattern 17c, and 20 is an output electrode.
ここで、外部端子１５と外部リード１６との接
続は、第４図に示す如く、外部端子１５の突起状
の接点部２１が外部リード１６に接触するように
溶接にて行われている。而して、外部端子１５の
先端部には、外部リード１６が接点部２１以外の
外部端子１５の部分に接続しないように略円弧状
の切欠部２２が形成されている。切欠部２２の形
状は、外部リード１６が接点部２１以外の外部端
子１５の部分に接触しないようにするものであれ
ば略円弧状以外の如何なるなるものであつても良
い。 Here, the connection between the external terminal 15 and the external lead 16 is performed by welding so that the protruding contact portion 21 of the external terminal 15 comes into contact with the external lead 16, as shown in FIG. A substantially arc-shaped notch 22 is formed at the tip of the external terminal 15 so that the external lead 16 is not connected to any part of the external terminal 15 other than the contact portion 21 . The shape of the notch 22 may be any shape other than a substantially arc shape as long as it prevents the external lead 16 from coming into contact with any portion of the external terminal 15 other than the contact portion 21.
このように構成された半導体装置３０によれ
ば、外部端子１５と外部リード１６とが接点部２
１だけで接触しているので、溶接動作時にこれら
の接続部に異常電流が流れるのを防止して接点部
２１における溶接強度を十分に高い状態に保持す
ることができる。その結果、半導体装置３０の信
頼性を高めることができる。また、外部端子１５
に切欠部２２が設けられているので、第５図に示
す如く、溶接機の電極２３ａ，２３ｂによつて外
部端子１５と外部リード１６とを両側から一体に
挾持して溶接を行つても、外部端子１５と外部リ
ード１６とは常に接点部２１だけで接触している
ので、溶接電流を安定した状態で供給することが
できる。その結果、溶接時に溶接機の電極２３
ａ，２３ｂが外部端子１５や外部リード１６に固
着する事故を防止して、溶接機の電極２３ａ，２
３ｂの寿命を長くすることができる。 According to the semiconductor device 30 configured in this way, the external terminal 15 and the external lead 16 are connected to the contact portion 2.
Since only the contacts 1 are in contact with each other, abnormal current can be prevented from flowing through these connections during welding operations, and the welding strength at the contact portions 21 can be maintained at a sufficiently high level. As a result, the reliability of the semiconductor device 30 can be improved. In addition, external terminal 15
Since the notch 22 is provided in the outer terminal 22, as shown in FIG. Since the external terminal 15 and the external lead 16 are always in contact only through the contact portion 21, welding current can be stably supplied. As a result, when welding, the electrode 23 of the welding machine
Welding machine electrodes 23a, 23b prevent accidents such as sticking to external terminals 15 and external leads 16.
3b can be extended in life.
以上説明した如く、本発明に係る半導体装置に
よれば、接点部の溶接強度の向上及び溶接機の電
極の長寿命化を達成することができるものであ
る。
As described above, according to the semiconductor device according to the present invention, it is possible to improve the welding strength of the contact portion and extend the life of the electrode of the welding machine.
第１図は、本発明の一実施例の斜視図、第２図
は、同実施例の内部を示す断面図、第３図は、同
実施例の内部の構造を示す斜視図、第５図及び第
４図Ａ，Ｂは同実施例の接点部の接触状態を示す
説明図、第６図及び第７図は、従来の半導体装置
の接点部の接触状態を示す説明図である。
１０……アルミニウム基板、１１ａ，１１ｂ…
…半導体素子、１２……外囲器、１３……モール
ド樹脂、１４……ターミナルホルダー、１５……
外部端子、１６……外部リード、１７ａ，１７
ｂ，１７ｃ……導体パターン、１８……絶縁層、
１９……グランド端子、２０……出力電極、２１
……接点部、２２……切欠部、２３ａ，２３ｂ…
…溶接機の電極。
Fig. 1 is a perspective view of an embodiment of the present invention, Fig. 2 is a sectional view showing the inside of the embodiment, Fig. 3 is a perspective view showing the internal structure of the embodiment, and Fig. 5. 4A and 4B are explanatory diagrams showing the contact state of the contact portion of the same embodiment, and FIGS. 6 and 7 are explanatory diagrams showing the contact state of the contact portion of the conventional semiconductor device. 10... Aluminum substrate, 11a, 11b...
...Semiconductor element, 12...Envelope, 13...Mold resin, 14...Terminal holder, 15...
External terminal, 16... External lead, 17a, 17
b, 17c...conductor pattern, 18...insulating layer,
19...Ground terminal, 20...Output electrode, 21
...Contact part, 22...Notch part, 23a, 23b...
...Welding machine electrode.
Claims (1)
端部が接続された略棒状の外部リードと、該外部
リードの長手方向に沿つて略平行に配置され、か
つ、該外部リードの他端部と溶接により接続する
ための突起状の接続部が形成された主面を有し、
該接続部で前記他端部と溶接により接続された外
部端子とを具備する半導体装置において、 前記主面の前記外部リードと重なり合う重複領
域に、前記外部リードと前記外部端子とが溶接さ
れる際に前記外部リードが変形して前記接続部以
外の前記重複領域に接触する面積を低減するため
の切欠部が形成されていることを特徴とする半導
体装置。[Scope of Claims] 1. A semiconductor element having an electrode part, a substantially rod-shaped external lead having one end connected to the electrode part, and a semiconductor element arranged substantially parallel to the longitudinal direction of the external lead, and having one end connected to the electrode part. It has a main surface on which a protruding connection part is formed for connection to the other end of the external lead by welding,
In a semiconductor device comprising an external terminal connected to the other end portion by welding at the connecting portion, when the external lead and the external terminal are welded to an overlapping region overlapping the external lead on the main surface. A semiconductor device characterized in that a cutout portion is formed in the outer lead to reduce an area where the external lead deforms and comes into contact with the overlapping region other than the connection portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60213720A JPS6273750A (en) | 1985-09-27 | 1985-09-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60213720A JPS6273750A (en) | 1985-09-27 | 1985-09-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6273750A JPS6273750A (en) | 1987-04-04 |
| JPH0461507B2 true JPH0461507B2 (en) | 1992-10-01 |
Family
ID=16643877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60213720A Granted JPS6273750A (en) | 1985-09-27 | 1985-09-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6273750A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3112113B2 (en) * | 1992-03-09 | 2000-11-27 | 三菱電機株式会社 | Semiconductor device |
| JP5041798B2 (en) | 2006-12-15 | 2012-10-03 | 三菱電機株式会社 | Semiconductor device |
| JP5182355B2 (en) * | 2010-12-10 | 2013-04-17 | 株式会社デンソー | Semiconductor device |
-
1985
- 1985-09-27 JP JP60213720A patent/JPS6273750A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6273750A (en) | 1987-04-04 |
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