JPH0462187B2 - - Google Patents
Info
- Publication number
- JPH0462187B2 JPH0462187B2 JP57166559A JP16655982A JPH0462187B2 JP H0462187 B2 JPH0462187 B2 JP H0462187B2 JP 57166559 A JP57166559 A JP 57166559A JP 16655982 A JP16655982 A JP 16655982A JP H0462187 B2 JPH0462187 B2 JP H0462187B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- semiconductor substrate
- semiconductor
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【発明の詳細な説明】 ［発明の属する技術分野］ この発明は半導体位置検出器に関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a semiconductor position detector.
［従来技術とその問題点］
従来技術例を第１図に示す。（参考文献・山本
他：半導体光位置検出器．テレビ全大．７、p29
〜30（1979））。[Prior art and its problems] An example of the prior art is shown in FIG. (References: Yamamoto et al.: Semiconductor optical position detector. TV Zendai. 7, p29
~30 (1979)).
図中１1，１2，１3，１4は信号電極、２はｐ形
抵抗層３は高抵抗Si基盤（ｉ層）、４はn+層（共
通アース電極）、５1，５2，５3，５4は電流増幅
器、６はデータ処理装置、７は光ビーム位置表示
装置、８は光ビームをそれぞれ示す。このような
測定系において、光ビームが半導体位置検出器に
入射すると、Siとの相互作用により電子正孔対が
発生し、光電流としてｐ形抵抗層２へ到着する。
光電流はそれぞれの電極１1，１2，１3，１4まで
の抵抗値に逆比例するように分割され、電流増幅
器５1，５2，５3，５4により増幅されデータ処理
装置６へ入力される。データ処理装置６において
は各信号を比較判別して光ビーム位置を算出し、
光ビーム位置表示装置７へ表示信号を送り、光ビ
ーム位置が表示される。 In the figure, 1 1 , 1 2 , 1 3 , 1 4 are signal electrodes, 2 is a p-type resistance layer 3 is a high-resistance Si substrate (i layer), 4 is an n + layer (common ground electrode), 5 1 , 5 2 , 5 3 , 5 4 are current amplifiers, 6 is a data processing device, 7 is a light beam position display device, and 8 is a light beam. In such a measurement system, when a light beam is incident on the semiconductor position detector, electron-hole pairs are generated by interaction with Si, and the electron-hole pairs arrive at the p-type resistance layer 2 as photocurrent.
The photocurrent is divided in inverse proportion to the resistance value of each electrode 1 1 , 1 2 , 1 3 , 1 4 , and is amplified by current amplifiers 5 1 , 5 2 , 5 3 , 5 4 and sent to a data processing device 6 is input to. The data processing device 6 compares and discriminates each signal and calculates the light beam position.
A display signal is sent to the light beam position display device 7, and the light beam position is displayed.
しかるにこの測定系において使用されている半
導体位置検出器には次のような欠点や問題点が存
在する。 However, the semiconductor position detector used in this measurement system has the following drawbacks and problems.
(1) 半導体基板にｐ形あるいはｎ形の不順物拡散
を行うプロセスが必要であり、製作工程の簡素
化が困難である。(1) A process for diffusing p-type or n-type impurities into a semiconductor substrate is required, making it difficult to simplify the manufacturing process.
(2) ｐ形あるいはｎ形の不純物拡散は通常1000℃
前後で行なわれるため、半導体基板の少数キャ
リア寿命を劣化させ、光に対する信号電流が減
少する。(2) P-type or n-type impurity diffusion is usually carried out at 1000℃.
Since this is performed before and after the irradiation, the minority carrier lifetime of the semiconductor substrate is degraded, and the signal current for light is reduced.
［発明の目的］
この発明は、上述した従来の半導体位置検出器
の欠点を改良したもので、製作工程が単純で感度
もすぐれている半導体位置検出器を提供すること
を目的とする。[Object of the Invention] The present invention improves the drawbacks of the conventional semiconductor position detector described above, and aims to provide a semiconductor position detector that has a simple manufacturing process and excellent sensitivity.
［発明の概要］
本発明は、半導体基板と、この半導体基板の表
面に接触して前記半導体基板側の界面に空乏層を
形成し、前記半導体基板に照射された光や放射線
のビームによつて生じた電子正孔対が前記空乏層
に収集する金属抵抗層と、この金属抵抗層の表面
に複数個形成され、前記空乏層に収集された電子
正孔対を前記金属抵抗層によつて分割し夫々信号
電流として出力する信号電流取り出し用金属電極
とを具備することを特徴とする半導体位置検出器
を提供するものである。[Summary of the Invention] The present invention is directed to a semiconductor substrate, a depletion layer is formed at an interface on the semiconductor substrate side by contacting the surface of the semiconductor substrate, and a depletion layer is formed at the interface of the semiconductor substrate by a beam of light or radiation irradiated onto the semiconductor substrate. a metal resistance layer in which the generated electron-hole pairs are collected in the depletion layer; a plurality of metal resistance layers are formed on the surface of the metal resistance layer, and the electron-hole pairs collected in the depletion layer are divided by the metal resistance layer; The present invention provides a semiconductor position detector characterized in that it is equipped with metal electrodes for taking out signal currents and outputting them as signal currents.
［発明の効果］
本発明による最大の効果は、製作工程の簡素化
と検出感度の向上とにある。[Effects of the Invention] The greatest effects of the present invention are simplification of the manufacturing process and improvement of detection sensitivity.
［発明の実施例］
本発明の実施例を第２図に示す。図中、９はｎ
形Si基板、１０は薄膜Au抵抗層（約70Å、
100KΩ／口）１１はAlオーミック性接地電極、
１２1，１２2，１２3，１２4は厚膜Au信号電極
（約400Å）をそれぞれ表わす。動作原理は光ビー
ム８によつてSi中で発生する電子正孔対が薄膜
Au抵抗層下に形成される空乏層により収集され、
その後、薄膜Au抵抗層により分割されて各信号
電極１２1，１２2，１２3，１２4へ流入すること
によつている。即ち、前述の従来技術例における
ｐ形抵抗層の役割を、薄膜Au抵抗層が果してい
ることになる。[Embodiment of the Invention] An embodiment of the invention is shown in FIG. In the figure, 9 is n
type Si substrate, 10 is a thin film Au resistance layer (approximately 70 Å,
100KΩ/mouth) 11 is Al ohmic grounding electrode,
12 1 , 12 2 , 12 3 , and 12 4 represent thick-film Au signal electrodes (approximately 400 Å), respectively. The operating principle is that electron-hole pairs generated in Si by the light beam 8 form a thin film.
Collected by the depletion layer formed under the Au resistance layer,
Thereafter, it is divided by the thin Au resistance layer and flows into each signal electrode 12 1 , 12 2 , 12 3 , 12 4 . That is, the thin Au resistance layer plays the role of the p-type resistance layer in the prior art example described above.
［発明の他の実施例］
本発明の半導体位置検出器は、半導体および薄
膜金属抵抗層の種類に関しては任意である。又、
構造的にも第３図に示されるような両面型も可能
である。この場合、表面はAu、裏面はAlの薄膜
抵抗層による信号電流分割を利用する。[Other Embodiments of the Invention] The semiconductor position detector of the present invention may be of any type with respect to the type of semiconductor and thin-film metal resistance layer. or,
In terms of structure, a double-sided type as shown in FIG. 3 is also possible. In this case, signal current division is utilized using a thin film resistance layer of Au on the front surface and Al on the back surface.
第１図は従来の半導体位置検出器を用いた測定
系の概略説明図、第２図は本発明の一実施例を示
す半導体位置検出器の斜視図、第３図は本発明の
他の実施例を示す半導体位置検出器の斜視図。
１1〜4……信号電極、２……ｐ形抵抗層、３…
…高抵抗Si基板、４……n+層、５1〜4……電流増
幅器、６……データ処理装置、７……光ビーム位
置表示装置、８……光ビーム、９……ｎ形Si基
板、１０……薄膜Au抵抗層、１１……Alオーミ
ツク性接地電極、１２1〜4……厚膜Au信号電極、
１３……ｎ形Si基板、１４……薄膜Au抵抗層、
１５……薄膜Al抵抗層、１６1〜2……厚膜Au信号
電極、１７1〜2……厚膜Al信号電極。
FIG. 1 is a schematic explanatory diagram of a measurement system using a conventional semiconductor position detector, FIG. 2 is a perspective view of a semiconductor position detector showing one embodiment of the present invention, and FIG. 3 is another embodiment of the present invention. FIG. 2 is a perspective view of an example semiconductor position detector. 1 1-4 ...signal electrode, 2...p-type resistance layer, 3...
...High resistance Si substrate, 4...n + layer, 5 1-4 ...current amplifier, 6...data processing device, 7...light beam position display device, 8...light beam, 9...n-type Si Substrate, 10... thin film Au resistance layer, 11... Al ohmic ground electrode, 12 1-4 ... thick film Au signal electrode,
13... n-type Si substrate, 14... thin film Au resistance layer,
15... Thin film Al resistance layer, 16 1-2 ... Thick film Au signal electrode, 17 1-2 ... Thick film Al signal electrode.
Claims (1)
して前記半導体基板側の界面に空乏層を形成し、
前記半導体基板に照射された光や放射線のビーム
によつて生じた電子正孔対が前記空乏層に収集す
る金属抵抗層と、この金属抵抗層の表面に複数個
形成され、前記空乏層に収集された電子正孔対を
前記金属抵抗層によつて分割し夫々信号電流とし
て出力する信号電流取り出し用金属電極とを具備
することを特徴とする半導体位置検出器。1. Contacting a semiconductor substrate and the surface of this semiconductor substrate to form a depletion layer at the interface on the semiconductor substrate side,
a metal resistance layer in which electron-hole pairs generated by a beam of light or radiation irradiated on the semiconductor substrate are collected in the depletion layer; A semiconductor position detector comprising: a metal electrode for taking out a signal current, which divides the generated electron-hole pairs by the metal resistance layer and outputs each as a signal current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57166559A JPS5956778A (en) | 1982-09-27 | 1982-09-27 | Position detector for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57166559A JPS5956778A (en) | 1982-09-27 | 1982-09-27 | Position detector for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5956778A JPS5956778A (en) | 1984-04-02 |
| JPH0462187B2 true JPH0462187B2 (en) | 1992-10-05 |
Family
ID=15833502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57166559A Granted JPS5956778A (en) | 1982-09-27 | 1982-09-27 | Position detector for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956778A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164281A (en) * | 1986-12-25 | 1988-07-07 | Kyocera Corp | Position detecting device |
| JPS63145162U (en) | 1987-03-16 | 1988-09-26 | ||
| JPS6410108A (en) * | 1987-07-02 | 1989-01-13 | Rikagaku Kenkyusho | Constitution of semiconductor image position detecting element and image position detecting method |
| US4961096A (en) * | 1987-07-02 | 1990-10-02 | Rikagaku Kenkyusho | Semiconductor image position sensitive device with primary and intermediate electrodes |
| JPH07118551B2 (en) * | 1987-09-17 | 1995-12-18 | 富士電機株式会社 | Two-dimensional optical position detector |
| JP3888450B2 (en) | 2002-05-10 | 2007-03-07 | 日本電気株式会社 | Target device and light detection device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950579A (en) * | 1982-09-16 | 1984-03-23 | Komatsu Ltd | Semiconductor optical position detector |
-
1982
- 1982-09-27 JP JP57166559A patent/JPS5956778A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5956778A (en) | 1984-04-02 |
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