JPH0464255A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0464255A JPH0464255A JP2178021A JP17802190A JPH0464255A JP H0464255 A JPH0464255 A JP H0464255A JP 2178021 A JP2178021 A JP 2178021A JP 17802190 A JP17802190 A JP 17802190A JP H0464255 A JPH0464255 A JP H0464255A
- Authority
- JP
- Japan
- Prior art keywords
- case
- gel
- crawl
- filling
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、半導体装置に係り、特に電力用モジュール
の外装に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the exterior of a power module.
[従来の技術1
第4図は従来の電力用モジュールの構成を示す断面図で
ある。第4図において、1は合成樹脂製の側壁からなる
無底状のケースであり、このケース1の底板として金属
製の放熱板2が接着されている。この放熱板2上には絶
縁基板(もしくは絶縁膜)3が接着され、さらにその上
に導体配線がなされる。絶縁基板3上には半導体素子4
が搭載されるとともに、半導体素子4と接続する絶縁基
板3上の導体配線部のパッドに、リード5の下端部5a
がはんだ層を介して接合されるようになっている。また
、ケース1内にはゲル状充填物6が注入され、さらにそ
の上に密封用樹脂7が注入されて密封される。[Prior Art 1] FIG. 4 is a sectional view showing the configuration of a conventional power module. In FIG. 4, reference numeral 1 denotes a bottomless case made of side walls made of synthetic resin, and a metal heat dissipation plate 2 is bonded as the bottom plate of this case 1. An insulating substrate (or insulating film) 3 is adhered onto this heat sink 2, and conductor wiring is further formed on the insulating substrate (or insulating film) 3. A semiconductor element 4 is placed on the insulating substrate 3.
is mounted, and the lower end portion 5a of the lead 5 is attached to the pad of the conductor wiring portion on the insulating substrate 3 connected to the semiconductor element 4.
are connected via a solder layer. Further, a gel-like filling 6 is injected into the case 1, and a sealing resin 7 is further injected thereon to seal it.
[発明が解決しようとする課題1
ところで、上記ゲル状充填物6は、製造途中でケース1
の内壁をはい上がるという性質を有するため、第5図(
a)のように、ケース高1の高さが低いものは、ゲル状
充填物6がケース1の内壁をったって、ケース1の上面
まではい上がってしまい、その後に注入充填する密封用
樹脂7によつて半導体素子4を密封できないという問題
が生じていた。[Problem to be Solved by the Invention 1] By the way, the above-mentioned gel-like filler 6
Because it has the property of crawling up the inner wall of the
If the case height 1 is low as shown in a), the gel-like filling 6 will crawl up the inner wall of the case 1 and up to the top surface of the case 1, causing the sealing resin 7 to be injected and filled afterwards. Therefore, a problem has arisen in that the semiconductor element 4 cannot be sealed tightly.
また、密封用樹脂7がケース1に正常に接合するために
は第5図(b)のように、ケース1の高さをゲル状充填
物6のはい上がり部よりもさらに高くする必要があるの
で、半導体装置の外形高さが必然的に大きくなり、装置
全体が大型化するという問題があった。In addition, in order for the sealing resin 7 to properly bond to the case 1, the height of the case 1 needs to be made higher than the crawling part of the gel-like filling 6, as shown in FIG. 5(b). Therefore, the external height of the semiconductor device inevitably increases, resulting in a problem that the overall device becomes larger.
[課題を解決するための手段1
この発明に係る半導体装置は、ケースの内側の側壁部に
ゲル状充填物のはい上がりを防止するはい上がり防止部
を設けたものである。[Means for Solving the Problems 1] A semiconductor device according to the present invention is provided with a creep-up prevention portion on the inner side wall portion of the case to prevent the gel-like filling from creeping up.
〔作用1
この発明においては、ケース内側の側壁部にゲル状充填
物のはい上がりを防止するはい上がり防止部を設けたの
で、ゲル状充填物がはい上がることがなく、その後の密
封用樹脂の注入充填に支障がない。[Function 1] In this invention, a creep-up prevention part is provided on the inner side wall of the case to prevent the gel-like filling from creeping up, so that the gel-like filling does not creep up and the subsequent sealing resin is not applied. There is no problem with injection filling.
[実施例] 以下、この発明の一実施例を図面について説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.
第1図はこの発明の一実施例を示す半導体装置の構成断
面図である。FIG. 1 is a cross-sectional view of a semiconductor device showing an embodiment of the present invention.
第1図において、第4図と同一符号は同一構成部分を示
すので、その説明は省略する。1aは前記ケース1の内
側の側壁部に設けたはい上がり防止部で、例えば矩形状
の突起からなる。In FIG. 1, the same reference numerals as in FIG. 4 indicate the same constituent parts, so the explanation thereof will be omitted. Reference numeral 1a denotes a crawling prevention portion provided on the inner side wall of the case 1, and is made of, for example, a rectangular protrusion.
上記のように、ケース1の内側の側壁部に突起1aを設
けることにより、ゲル状充填物6がケース1の内側を上
面近(まではい上がるのを防ぎ、その後に注入充填する
密封用樹脂7がケース1と正常に接合される。As described above, by providing the protrusion 1a on the inner side wall of the case 1, the gel-like filler 6 is prevented from crawling up the inner side of the case 1 to near the top surface, and the sealing resin 7 is injected and filled afterwards. is successfully joined to case 1.
なお、上記突起1aはケース1の内側の側壁部のどの部
分に設けてもよく、その数も問わない。Note that the protrusions 1a may be provided on any part of the inner side wall of the case 1, and the number thereof is not limited.
また、はい上がり防止部の形状は第2図(a)〜(f)
に示すように、種々の形状の突起18〜1dまたは種々
の形状の凹部1e、1f等が考えられる。In addition, the shape of the crawling prevention part is shown in Fig. 2 (a) to (f).
As shown in , various shapes of protrusions 18 to 1d or various shapes of recesses 1e, 1f, etc. can be considered.
このように適宜な形状のはい上がり防止部をケース1の
内側の側壁部に設けることにより、第3図(a)に示す
ようにゲル状充填物6のはい上がりを突起1aで止める
ことができ、また、第3図(b)に示すように、ケース
1を少し傾けた場合や、第3図(C)に示すように、ゲ
ル状充填物6の量が多(なった場合は、表面張力の作用
により、突起1aでゲル状充填物6をせき止める効果が
ある。他の突起1b〜1dや、凹部1e、ifについて
も同様の作用効果がある。By providing a crawling-preventing portion of an appropriate shape on the inner side wall of the case 1 in this way, it is possible to prevent the gel-like filling 6 from climbing up with the protrusion 1a, as shown in FIG. 3(a). Also, as shown in FIG. 3(b), when the case 1 is slightly tilted, or as shown in FIG. 3(C), if the amount of gel-like filling 6 is large, the surface Due to the action of tension, the protrusion 1a has the effect of damming up the gel-like filling 6. The other protrusions 1b to 1d and the recesses 1e and if have the same effect.
〔発明の効果]
以上説明したように、この発明は、ケースの内側の側壁
部にゲル状充填物のはい上がりを防止するためのはい上
がり防止部を設けたので、ゲルのはい上がりを防止し、
密封用樹脂が正常にケースと接合できる。また、これに
よって作業性がよく、しかも薄形の半導体装置が得られ
る効果がある。[Effects of the Invention] As explained above, in the present invention, a crawling prevention part for preventing the gel filling from creeping up is provided on the inner side wall of the case, so that the gel can be prevented from climbing up. ,
The sealing resin can be properly bonded to the case. Moreover, this has the effect of providing good workability and a thin semiconductor device.
第1図はこの発明の一実施例を示す半導体装置の構成断
面図、第2図(a)〜(f)はこの発明のはい上がり防
止部の他の形状例を示す断面図、第3図はこの発明の詳
細な説明する断面略図、第4図は従来の半導体装置の断
面図、第5図はゲル状充填物のはい上がりを説明する断
面略図である。
図において、1はケース、1a〜1dは突起、Ie、1
fは凹部、2は放熱板、3は絶縁基板、4は半導体素子
、5はリード、6はゲル状充填物、7は密封用樹脂であ
る。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第
図
第
図
(a)
(b)
(d)
(e)
le、1f 四部
(C)
(f)
第
図
1、:IFIG. 1 is a cross-sectional view of the configuration of a semiconductor device showing one embodiment of the present invention, FIGS. 2(a) to (f) are cross-sectional views showing other examples of shapes of the crawling prevention portion of the present invention, and FIG. FIG. 4 is a cross-sectional diagram explaining the details of the present invention, FIG. 4 is a cross-sectional diagram of a conventional semiconductor device, and FIG. 5 is a schematic cross-sectional diagram explaining how the gel-like filling material crawls up. In the figure, 1 is a case, 1a to 1d are protrusions, Ie, 1
f is a recessed portion, 2 is a heat sink, 3 is an insulating substrate, 4 is a semiconductor element, 5 is a lead, 6 is a gel-like filling, and 7 is a sealing resin. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figures (a) (b) (d) (e) le, 1f Part 4 (C) (f) Figures 1, :I
Claims (1)
に前記ケースの底部に装着された放熱板と、この放熱板
上に接着された絶縁基板と、導体配線のなされた前記絶
縁基板上に搭載された半導体素子およびリードと、表面
が前記半導体素子よりも上方に位置するように前記ケー
ス内に注入されたゲル状充填物と、さらに、その後に注
入充填された密封用樹脂とを有する半導体装置において
、前記ケースの内側の側壁部に前記ゲル状充填物のはい
上がりを防止するためのはい上がり防止部を設けたこと
を特徴とする半導体装置。A bottomless case, a heat sink attached to the bottom of the case to form a bottom plate of the case, an insulating substrate bonded to the heat sink, and a conductor wired on the insulating substrate. A semiconductor comprising a mounted semiconductor element and a lead, a gel-like filling injected into the case so that the surface thereof is located above the semiconductor element, and a sealing resin injected and filled after that. 1. A semiconductor device, characterized in that a creep-up prevention portion for preventing the gel-like filling from creeping up is provided on an inner side wall portion of the case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2178021A JPH0464255A (en) | 1990-07-03 | 1990-07-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2178021A JPH0464255A (en) | 1990-07-03 | 1990-07-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0464255A true JPH0464255A (en) | 1992-02-28 |
Family
ID=16041193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2178021A Pending JPH0464255A (en) | 1990-07-03 | 1990-07-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0464255A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613500A (en) * | 1992-06-26 | 1994-01-21 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
| WO2017082122A1 (en) * | 2015-11-12 | 2017-05-18 | 三菱電機株式会社 | Power module |
| WO2023073831A1 (en) * | 2021-10-27 | 2023-05-04 | 三菱電機株式会社 | Semiconductor device and method for manufacturing semiconductor device |
-
1990
- 1990-07-03 JP JP2178021A patent/JPH0464255A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613500A (en) * | 1992-06-26 | 1994-01-21 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
| WO2017082122A1 (en) * | 2015-11-12 | 2017-05-18 | 三菱電機株式会社 | Power module |
| JPWO2017082122A1 (en) * | 2015-11-12 | 2018-08-23 | 三菱電機株式会社 | Power module |
| US10468315B2 (en) | 2015-11-12 | 2019-11-05 | Mitsubishi Electric Corporation | Power module |
| WO2023073831A1 (en) * | 2021-10-27 | 2023-05-04 | 三菱電機株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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