JPH0321845U - - Google Patents
Info
- Publication number
- JPH0321845U JPH0321845U JP8332989U JP8332989U JPH0321845U JP H0321845 U JPH0321845 U JP H0321845U JP 8332989 U JP8332989 U JP 8332989U JP 8332989 U JP8332989 U JP 8332989U JP H0321845 U JPH0321845 U JP H0321845U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- susceptor
- substrate
- heating
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案装置の一実施例を示す断面図、
第２図ａ及びｂは夫々本実施例装置と従来装置を
用いてＡｌＧａＩｎＰ系の半導体レーザを作製し
た時、１枚の基板から得られるレーザの発振しき
い値電流を測定したヒストグラム、第３図は従来
装置を示す断面図である。
１…反応管、２…ガス導入管、３…排気管、５
…ＧａＡｓ基板、６…高周波加熱コイル、９…サ
セプタ、１２…（多結晶の）ＧａＡｓ。
FIG. 1 is a sectional view showing an embodiment of the device of the present invention;
Figures 2a and b are histograms of the laser oscillation threshold current obtained from one substrate when AlGaInP semiconductor lasers were fabricated using the device of this embodiment and the conventional device, respectively, and Figure 3 is a sectional view showing a conventional device. 1...Reaction tube, 2...Gas introduction tube, 3...Exhaust pipe, 5
...GaAs substrate, 6...high frequency heating coil, 9...susceptor, 12...(polycrystalline) GaAs.
Claims (1)
排気管と、上記反応管内に配された膜形成用の基
板を載置するサセプタと、該サセプタを加熱する
加熱手段と、を備え、上記成長用基板の周縁に砒
素化合物を配したことを特徴とするＭＯＣＶＤ装
置。 A reaction tube, a gas introduction pipe and an exhaust pipe communicating with the reaction tube, a susceptor disposed in the reaction tube on which a substrate for film formation is placed, and a heating means for heating the susceptor, An MOCVD apparatus characterized in that an arsenic compound is arranged around the periphery of a growth substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8332989U JPH0321845U (en) | 1989-07-14 | 1989-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8332989U JPH0321845U (en) | 1989-07-14 | 1989-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321845U true JPH0321845U (en) | 1991-03-05 |
Family
ID=31630906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8332989U Pending JPH0321845U (en) | 1989-07-14 | 1989-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321845U (en) |
-
1989
- 1989-07-14 JP JP8332989U patent/JPH0321845U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0321845U (en) | ||
| JPH0468519U (en) | ||
| JPS6183328U (en) | ||
| JPH0320434U (en) | ||
| JPS6252929U (en) | ||
| JPH0224533U (en) | ||
| JPS62170627U (en) | ||
| JPH0482839U (en) | ||
| JPH0357965U (en) | ||
| JPS60116229U (en) | Heat generating carrier for semiconductor wafer | |
| JPS6273534U (en) | ||
| JPS60185331U (en) | Vapor phase growth equipment | |
| JPH03120559U (en) | ||
| JPS5812941U (en) | Susceptor for vapor phase growth equipment | |
| JPS6190856U (en) | ||
| JPS60147676U (en) | Vapor phase growth equipment | |
| JPS6219731U (en) | ||
| JPH0299964U (en) | ||
| JPH0272546U (en) | ||
| JPS60118234U (en) | Vapor phase growth equipment | |
| JPH0273737U (en) | ||
| JPH032630U (en) | ||
| JPS62132167U (en) | ||
| JPS59109776U (en) | Vapor phase growth equipment | |
| JPH0291336U (en) |