JPH0468552A - Direction judgment equipment for semiconductor device - Google Patents

Direction judgment equipment for semiconductor device

Info

Publication number
JPH0468552A
JPH0468552A JP2183757A JP18375790A JPH0468552A JP H0468552 A JPH0468552 A JP H0468552A JP 2183757 A JP2183757 A JP 2183757A JP 18375790 A JP18375790 A JP 18375790A JP H0468552 A JPH0468552 A JP H0468552A
Authority
JP
Japan
Prior art keywords
semiconductor device
brightness
ejector pin
lightness
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2183757A
Other languages
Japanese (ja)
Inventor
Yoriaki Kimura
木村 頼明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2183757A priority Critical patent/JPH0468552A/en
Publication of JPH0468552A publication Critical patent/JPH0468552A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To make an accurate inspection by judging the direction of a semiconductor device with a relative difference in lightness between the ejector pin's trace and the molded surface. CONSTITUTION:Light is cast on a semiconductor device 12 at an angle from an illuminator 12 and a molded section 8 is photographed with a photoelectric transfer equipment 1. Then, an image of the molded section 8 is taken into a judgment equipment 15 to detect the lightness of the molded section 8, with the lightness detection range set for the trace of the ejector pin. A part between A and B is the ejector pin's trace and a part between C and D is the molded section. When these parts are converted to video signals, the A-B part comes out dark and has a lower lightness than the C-D part in a normally directed semiconductor device; there is a difference in lightness 11 between the A-B part and the C-D part in a normally directed semiconductor device. In the case of an abnormally directed semiconductor device, however, there is no difference in lightness between the A-B part and the C-D part. When the difference in lightness 11 is within the preliminarily set tolerance, the semiconductor device is judged good. When the difference in lightness 11 is not within the preliminarily set tolerance, the semiconductor device is judged no good.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体装置の方向判別装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a direction determining device for a semiconductor device.

〔従来の技術〕[Conventional technology]

第8図は従来の半導体装置の方向判別装置の構成を示す
ブロック図で、図において(1)は光電変換装置、Oe
は映像信号を2 (fi化するための映像信号しきい値
決定部、0ηは2値化画像決定部、(2a)(2b)は
半導体装置のイジェクタピン跡部とモールド部の位置を
記憶する検査範囲設定部(18a) (18b)は検査
範囲設定部(2)で指定された範囲の白点数をカウント
する白点数カウント部、(至)は複数の白点数を比較す
る使途点数比較部、(5)は検査の判定基準である検査
判定値設定部、(6)は白点数比較部(至)の出力と検
査判定値設定部(5)の値を比較する検査結果判定部で
ある。第9図において(7)はイジエクタビン跡、(8
)はモールド部、叩は正常な方向の半導体装置である。
FIG. 8 is a block diagram showing the configuration of a conventional orientation determination device for a semiconductor device. In the figure, (1) is a photoelectric conversion device, an Oe
is a video signal threshold determination unit for converting the video signal into 2 (FI), 0η is a binarized image determination unit, (2a) and (2b) are inspections that memorize the positions of the ejector pin trace and mold part of the semiconductor device. Range setting section (18a) (18b) is a white point number counting section that counts the number of white points in the range specified by the inspection range setting section (2), (to) is a usage point comparison section that compares a plurality of white point numbers, ( 5) is an inspection judgment value setting section which is a judgment criterion of the inspection, and (6) is an inspection result judgment section which compares the output of the white point number comparison section (to) and the value of the inspection judgment value setting section (5). In Figure 9, (7) is the trace of idiectabine, (8
) is the mold part, and the tap is the semiconductor device in the normal direction.

第10図において、(9)は照明が明るい場合の映像信
号、Qlは照明が暗い場合の映像信号、Qlは検査判定
値設定部(5)で設定された映像信号しきい値である。
In FIG. 10, (9) is a video signal when the illumination is bright, Ql is a video signal when the illumination is dark, and Ql is a video signal threshold set by the inspection judgment value setting section (5).

第11図において、α湯は異常な方向の半導体装置であ
る。
In FIG. 11, α-water is a semiconductor device in an abnormal direction.

次に動作について説明する。第6図に示すように照明装
置側を半導体装置面の斜め方向より照明し、モールド部
(8)を光電変換装置fi+で撮影し、その画像を判定
装置αりにて取り込む。以後はマイクロコンピュータの
処理になるので第13図のフローチャートに従って説明
する。判定装置0りに取り込まれた画像より、映像信号
しきい値Osによって2値化画像が決定される。次にイ
ジェクタピン跡(7)の検出範囲を決定し、その範囲の
白点数をカウントする。そして、モールド部(8)の検
出範囲を決定し、その範囲の白点数をカウントする。こ
の部分と図にしたものが第9図から第12図までである
。第9図は正常な方向の半導体装置の場合でAB点間は
イジェクタピン跡部、C−D点間はモールド部である。
Next, the operation will be explained. As shown in FIG. 6, the illumination device side is illuminated from an oblique direction of the semiconductor device surface, the mold part (8) is photographed by a photoelectric conversion device fi+, and the image is captured by a determination device α. Since the subsequent processing is performed by the microcomputer, the explanation will be given according to the flowchart shown in FIG. A binarized image is determined from the image taken in by the determination device 0 according to the video signal threshold value Os. Next, the detection range of the ejector pin mark (7) is determined, and the number of white spots in that range is counted. Then, the detection range of the mold part (8) is determined, and the number of white spots in that range is counted. This part is illustrated in Figures 9 to 12. FIG. 9 shows the case of a semiconductor device in the normal direction, with the ejector pin trace between points AB and the mold part between points C and D.

この部分を映像信号に変換したものが第10図であり、
照明が明るい場合の映像信号(9)を映像信号しきい値
で二値化すると、ABのイジェクタピン跡部は早く、C
−D点間のモールド部は白く写る。第11図は異常な方
向の半導体装置の場合でA−B点間、C−D点間ともモ
ールド部の位置である。この部分を映像信号に変換した
ものが第12回であり、A−B点間とCD点間で明度差
は第10図のものに比較して非常に少ない。これらA−
B点間とC−D点間の2種類の白点数の差を求め、その
数値が検査判定値内かどうかで良・不良の判定を行って
いた。第13図は上記に示した半導体装置の方向判別装
置の動作を示すフローチャートである。
Figure 10 shows this part converted into a video signal.
When the video signal (9) in bright lighting is binarized using the video signal threshold, the ejector pin trace part of AB is early, and the trace part of the ejector pin of C is early.
The mold part between points -D appears white. FIG. 11 shows the position of the mold part between points A and B and between points C and D in the case of a semiconductor device in an abnormal direction. This part is converted into a video signal in the 12th time, and the difference in brightness between points A and B and between points CD is very small compared to that in FIG. These A-
The difference between the two types of white point numbers between points B and between points C and D was determined, and judgment as to whether the product was good or bad was made based on whether the value was within the inspection judgment value. FIG. 13 is a flowchart showing the operation of the above-described semiconductor device orientation determining device.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体装置の方向判別装置は以上のように構成さ
れていたので、同一のバ・ノケージでも全体の明るさが
変化した場合には検査のしきい値を変更することが必要
であり、変更しない場合には検査結果が誤判定されるこ
とがあり、映像信号側を照明が明るい場合の映像信号(
9)の時に正常に検査できるように設定して置くと、仮
に照明の劣化によって映像信号が映像信号0Φのように
なった場合には誤判定されるという問題点があった。
Conventional orientation determination devices for semiconductor devices have been configured as described above, so if the overall brightness changes even with the same bar cage, it is necessary to change the inspection threshold. If not, the test results may be misjudged, and the video signal side (when the lighting is bright)
If the setting is made so that the inspection can be performed normally at the time of 9), there is a problem that if the video signal becomes 0Φ due to deterioration of the illumination, an erroneous determination will be made.

この発明は上記のような問題点を解消するためになされ
たもので、同一のパンケージにおいて全体の明るさが変
化した場合や個々の半導体装置でイジェクタピン跡部、
モールド部の濃淡がわずかに変化した場合でも正常に方
向判別を行うことのできる半導体装置の方向判別装置を
得ることを目的とする。
This invention was made to solve the above-mentioned problems, and when the overall brightness changes in the same pancage or when the ejector pin traces and
It is an object of the present invention to provide a direction determination device for a semiconductor device that can normally perform direction determination even when the shading of a mold part changes slightly.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体装置の方向判別装置は、イジェク
タピン跡部とモールド部の明度差と検査しきい値を比較
するようにしたものである。
An apparatus for determining the direction of a semiconductor device according to the present invention compares the brightness difference between the ejector pin trace portion and the mold portion with an inspection threshold.

〔作用〕[Effect]

この発明における半導体装置の方向判別装置は、イジェ
クタピン跡部とモールド部の相対的な明度によって判定
する。
The device for determining the direction of a semiconductor device according to the present invention makes a determination based on the relative brightness of the ejector pin trace and the mold.

〔実施例〕〔Example〕

以下、この発明の一実施例を同について説明する。第1
図において、(1)は光電変換装置、(2)は半導体装
置のイジェクタピン跡部とモールド部の位置を記憶する
検査範囲設定部、(3)は検査範囲設定部(2)で指定
された範囲の明度を検出する明度検出部、(4)は複数
の明度検出部(3)の明度を比較する明度比較部、(5
)は検査の判定基準である検査判定値設定部、(6)は
明度比較部(4)の出力と検査判定値設定部(5)の値
を比較する検査結果判定部である。第2図において、(
7)はイジェクタピン跡、(8)はモールド部、側は正
常な方向の半導体装置である。第3図において、(9)
は照明が明るい場合の映像信号、0ωは照明が暗い場合
の映像信号、at+はイジェクタピン跡部とモールド部
の明度差である。第4図において、03は異常な方向の
半導体装置である。第6図において、(ロ)は照明装置
、αりは判定装置である。
An embodiment of the present invention will be described below. 1st
In the figure, (1) is a photoelectric conversion device, (2) is an inspection range setting unit that stores the positions of the ejector pin trace and mold part of the semiconductor device, and (3) is the range specified by the inspection range setting unit (2). (4) is a brightness comparison unit that compares the brightness of a plurality of brightness detection units (3);
) is an inspection judgment value setting section which is a judgment criterion for the inspection, and (6) is an inspection result judgment section which compares the output of the brightness comparison section (4) with the value of the inspection judgment value setting section (5). In Figure 2, (
7) is the ejector pin mark, (8) is the mold part, and the side is the semiconductor device in the normal direction. In Figure 3, (9)
is a video signal when the illumination is bright, 0ω is a video signal when the illumination is dark, and at+ is the difference in brightness between the ejector pin trace part and the mold part. In FIG. 4, 03 is a semiconductor device in an abnormal direction. In FIG. 6, (b) is a lighting device, and α (ri) is a determination device.

第6図に示すように、照明装置at+を半導体装置ωの
斜め方向より照明し、モールド部(8)を光電変換装置
(11で撮影し、その画像を判定装置051にて取り込
む。以後はマイクロコンピュータの処理(Z するので
第7図のフローチャートに従って説明する。
As shown in FIG. 6, the illumination device at+ is used to illuminate the semiconductor device ω from an oblique direction, the mold part (8) is photographed by the photoelectric conversion device (11), and the image is captured by the determination device 051. The computer processing (Z) will be explained according to the flowchart in FIG.

判定装置αωに取り込まれた画像よりイジェクタピン跡
部の明度検出範囲を設定し、明度を検出する。
The brightness detection range of the ejector pin trace is set based on the image captured by the determination device αω, and the brightness is detected.

次に、モールド部の明度検出範囲を設定し、明度を検出
する。この部分を図にしたものが第2図から第5図まで
である。第2図は正常な方向の半導体装置の場合で、A
−B点間はイジェクタピン跡部、C−D点間はモールド
部である。この部分を映像信号に変換したものが第3図
であり、A−B点間は暗く写るためC−D点間よりも明
度は低くなっているため、明度差Qllが生じている。
Next, the brightness detection range of the mold part is set, and the brightness is detected. This part is illustrated in Figures 2 to 5. Figure 2 shows the case of a semiconductor device in the normal direction, with A
The part between points -B is the ejector pin trace, and the part between points C and D is the mold part. This portion is converted into a video signal as shown in FIG. 3. Since the area between points A and B appears darker and the brightness is lower than that between points C and D, a brightness difference Qll occurs.

逆に、第4図の異常な方向の場合には、A−B点間、C
−D点間ともモールド面のため、第5図の映像信号には
第3図はど映像信号の明度差が表われない。
Conversely, in the case of the abnormal direction in Figure 4, between points A and B, C
Since both points -D are on the mold surface, the difference in brightness of the video signal in FIG. 3 does not appear in the video signal in FIG.

この明度差αυが予め設定された値以上かどうか判断し
、許容範囲内であれば良判定、そうでなければ不良判定
とする。
It is determined whether this brightness difference αυ is greater than or equal to a preset value, and if it is within the allowable range, it is determined to be good; otherwise, it is determined to be bad.

なお、上記実施例では半導体装置の方向判別に関して述
べたが、同様の方法で半導体装置の表裏判別等にも適用
可能で同様の効果が得られる。
Although the above embodiment has been described with respect to determining the orientation of a semiconductor device, the same method can also be applied to determining the front and back sides of a semiconductor device, and similar effects can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、半導体装置のイジェク
タピン跡の明度とモールド面の明度の相対的な明度差で
方向判別を行うようにしたので、精度のよい検査ができ
るという効果がある。
As described above, according to the present invention, since the direction is determined based on the relative brightness difference between the brightness of the ejector pin mark of the semiconductor device and the brightness of the mold surface, there is an effect that highly accurate inspection can be performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例である半導体装置の方向判
別装置のブロック図、第2回は正常な方向の半導体装置
の場合の図、第3図は正常な方向の半導体装置のイジェ
クタピン跡部とモールド部の映像信号波形図、第4図は
異常な方向の半導体装置の場合の図、第5図は異常な方
向の半導体装置のモールド部の映像信号波形図、第6図
はこの発明の一実施例である判定装置の斜視図、第7図
は第1図の半導体装置の方向判別装置の動作を示すフロ
ーチャート、第8図は従来の半導体装置の方向判別装置
のブロック図、第9図は正常な方向の半導体装置の場合
の図、第1O図は正常な方向の半導体装置のイジェクタ
ピン跡部とモールド部の映像信号波形図、第11図は異
常な方向の半導体装置の場合の図、第12図は異常な方
向の半導体装置のイジェクタピン跡部とモールド部の映
像信号波形図、第13図は第8図の半導体装置の方向判
別装置の動作を示すフローチャートである。 図において、(1,1は光電変換装置、(2)は検査範
囲設定部、(3a) (3b)は明度検出部、(4)は
明度比較部、(5)は検査判定値設定部、(6)は検査
結果判定部を示す。 なお、図中、同一符号は同一、又は相当部分を示す。 代理人    大  岩  増  雄 第1図 1尤’t u岬1 2a、2b  才炙査畢孔囲2の定番p3L0L、3b
  l!月/Lii、t、IP4 日月/1ptJ′j
−1巨 5捜査判定4村2足秤 を検を(SL刊定秤 第2図 8 モールド秤 12手4{、!−装!(王f方匈) 2B犬ブ東42号(明ろ1)↓易@−)to吹淳1評(
晴−・場合) lI 明度先 15:利赴装! 第4図 A虱 B、色 C,乞 り、色、 イLL 第11図 第12図 第9図 第10図 手 続 補 正 1園 (自発) & 補正の内容 (1)明細書第8頁第18行の「分と図にしたもの」を
r分を図にしたもの」と訂正する。 以  上 発明の名称 半導体装置の方向判別装置 3、補正をする者 事件との関係  特許出願人 住 所    東京都千代田区丸の内二丁目2番3号名
 称  (601)三菱電機株式会社代表者志岐守哉 4、代理人 住所 氏 名 東京都千代田区丸の内二丁目2番3号 三菱電機株式会社内 (7375)弁理士大岩増雄
Fig. 1 is a block diagram of a device for determining the orientation of a semiconductor device, which is an embodiment of the present invention, the second part is a diagram of a semiconductor device in the normal orientation, and Fig. 3 is the ejector pin of a semiconductor device in the normal orientation. A video signal waveform diagram of the trace part and the mold part, FIG. 4 is a diagram for a semiconductor device in an abnormal direction, FIG. 5 is a video signal waveform diagram of a mold part of a semiconductor device in an abnormal direction, and FIG. 6 is a diagram of the present invention. FIG. 7 is a flowchart showing the operation of the orientation determination device for a semiconductor device shown in FIG. 1, FIG. 8 is a block diagram of the conventional orientation determination device for a semiconductor device, and FIG. The figure shows a diagram of a semiconductor device in a normal orientation, Figure 1O is a video signal waveform diagram of the ejector pin trace and mold part of a semiconductor device in a normal orientation, and Figure 11 shows a diagram of a semiconductor device in an abnormal orientation. , FIG. 12 is a video signal waveform diagram of the ejector pin trace portion and the mold portion of the semiconductor device in an abnormal direction, and FIG. 13 is a flowchart showing the operation of the semiconductor device orientation determination device of FIG. 8. In the figure, (1, 1 is a photoelectric conversion device, (2) is an inspection range setting section, (3a) (3b) is a brightness detection section, (4) is a brightness comparison section, (5) is an inspection judgment value setting section, (6) indicates the inspection result determination section. In the figures, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa Standard hole wall 2 p3L0L, 3b
l! Month/Lii, t, IP4 Sun/Month/1ptJ'j
-1 Giant 5 Investigation Judgment 4 Village 2 Foot Scale Inspection (SL Published Fixed Scale No. 2 Figure 8 Mold Scale 12 Hands 4 {,!-So! ) ↓Easy @-) to Fukijun 1 review (
Sunny - Case) lI Brightness 15: Useful clothes! Figure 4 A, B, Color C, Beggar, Color, ILL Figure 11 Figure 12 Figure 9 Figure 10 Procedure Amendment 1 (Voluntary) & Contents of Amendment (1) Specification Page 8 Page 18 Correct the line ``minutes and diagrams'' to read ``r minutes as a diagram''. Name of the above invention: Semiconductor device orientation determination device 3; Relationship with the amended case Patent applicant address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mamoru Shiki, Representative of Mitsubishi Electric Corporation Ya 4, Agent address Name: Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo (7375) Patent attorney Masuo Oiwa

Claims (1)

【特許請求の範囲】[Claims]  半導体装置の表面を斜方から照明する照明手段、この
照明手段により照らされた半導体装置の表面及び表面の
イジェクタピン跡の像を撮像し電気信号を出力する光電
変換手段、半導体装置が正常な方向と異常な方向の時に
イジェクタピン跡とモールド部に切り換わるように配置
されたイジェクタピン跡検査範囲といずれの場合にもモ
ールド部又はいずれの場合にもイジェクタピン跡に配置
された検査範囲を設定する検査範囲設定手段、前記光電
変換手段より出力された電気信号から前記検査範囲設定
手段で設定された検査範囲の明度を検出するための明度
検出手段、この明度検出手段で得られ複数の明度を比較
するための明度比較手段、この明度比較手段で出力され
た値から方向判別を行うための判定値を設定する検査判
定値設定手段、前記明度比較手段の出力と前記検査判定
値設定手段の出力を比較し、検査結果を判定するための
検査結果判定手段を備えたことを特徴とする半導体装置
の方向判別装置。
An illumination means for illuminating the surface of a semiconductor device from an oblique direction, a photoelectric conversion means for capturing an image of the surface of the semiconductor device illuminated by the illumination means and an ejector pin mark on the surface and outputting an electric signal, and a direction in which the semiconductor device is normal. and an ejector pin trace inspection range placed so as to switch between the ejector pin trace and the mold part when the direction is abnormal, and an inspection range placed on the mold part in either case or on the ejector pin trace in either case. a brightness detection means for detecting the brightness of the test range set by the test range setting means from the electric signal output from the photoelectric conversion means; a plurality of brightness values obtained by the brightness detection means; brightness comparison means for comparison, inspection judgment value setting means for setting a judgment value for direction determination from the value output by the brightness comparison means, an output of the brightness comparison means and an output of the inspection judgment value setting means. 1. A direction determining device for a semiconductor device, comprising an inspection result determining means for comparing and determining an inspection result.
JP2183757A 1990-07-09 1990-07-09 Direction judgment equipment for semiconductor device Pending JPH0468552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2183757A JPH0468552A (en) 1990-07-09 1990-07-09 Direction judgment equipment for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2183757A JPH0468552A (en) 1990-07-09 1990-07-09 Direction judgment equipment for semiconductor device

Publications (1)

Publication Number Publication Date
JPH0468552A true JPH0468552A (en) 1992-03-04

Family

ID=16141448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2183757A Pending JPH0468552A (en) 1990-07-09 1990-07-09 Direction judgment equipment for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0468552A (en)

Similar Documents

Publication Publication Date Title
KR880002242A (en) Pattern defect detection method and apparatus
JPH0468552A (en) Direction judgment equipment for semiconductor device
JPH02257044A (en) bottle inspection equipment
JP2517385Y2 (en) Resin chip inspection device for semiconductor devices
JPH08152412A (en) Appearance inspection device
JPS61193007A (en) Inspection method for rod-shaped objects
JPS6232345A (en) Defect detection device
JP2801657B2 (en) Package inspection equipment with pins
JPH0431974A (en) Defect inspecting device for rectangular member
JPH0483107A (en) Apparatus for inspecting wiring pattern
JPH06201608A (en) Method for inspecting surface
JP2003215061A (en) Apparatus and method for inspecting pin, pin product and method for manufacturing pin product
JPH0543372Y2 (en)
JPS63106509A (en) Apparatus for inspecting mounted substrate
JPS59102106A (en) Inspection method
JPS57208153A (en) Inspecting method for defective aluminum pattern of semiconductor or the like
JP2981510B2 (en) Lead parts inspection equipment
JPS5848815A (en) Testing device for indicating instrument
JPS6027064B2 (en) Label front and back inspection device
JPH1051595A (en) Image processing system
JPH06104352A (en) Semiconductor device and its direction inspection device
JPH067105B2 (en) Soldering appearance inspection method
JPS63198854A (en) Foreign matter detecting device for template glass
JPS63122229A (en) Thick film IC pattern inspection equipment
JPH0682104B2 (en) Printed circuit board appearance inspection method