JPH047082B2 - - Google Patents
Info
- Publication number
- JPH047082B2 JPH047082B2 JP22676182A JP22676182A JPH047082B2 JP H047082 B2 JPH047082 B2 JP H047082B2 JP 22676182 A JP22676182 A JP 22676182A JP 22676182 A JP22676182 A JP 22676182A JP H047082 B2 JPH047082 B2 JP H047082B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- forming
- thermal
- resistance value
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 13
- 238000007751 thermal spraying Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】 ［発明の技術分野］ 本発明は、電子部品の形成方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method of forming an electronic component.
［従来技術とその問題点］
従来、混成集積回路装置等には電子部品等が多
数載位置されており例えば抵抗体は、RuO2系の
抵抗体ペーストをアルミナセラミツク等からなる
基板の所定領域に印刷し、焼成して形成されたも
のである。このようにして形成された抵抗体は、
耐熱性に優れており、しかも抵抗値にも変動が少
なく安定した特性を有するが、貴金属系統のペー
ストを使用するため製造コストが高い。製造コス
トを低減させるために、フエノール樹脂基板上に
樹脂層を基礎化してカーボン抵抗体を形成したも
のが開発されている。このような抵抗体は、製造
コストを低減させて、しかも比較的低温（150〜
200℃）で形成できる利点を有するが、基板自体
の耐温を高々80℃温度にしか保てない欠点があ
る。[Prior art and its problems] Conventionally, hybrid integrated circuit devices and the like are equipped with a large number of electronic components. It is formed by printing and firing. The resistor formed in this way is
Although it has excellent heat resistance and stable characteristics with little fluctuation in resistance value, the manufacturing cost is high because it uses a paste based on noble metals. In order to reduce manufacturing costs, carbon resistors have been developed in which a resin layer is formed on a phenol resin substrate to form a carbon resistor. Such resistors reduce manufacturing costs and operate at relatively low temperatures (150~
It has the advantage of being able to be formed at a temperature of 200°C, but has the disadvantage that the substrate itself can only withstand temperatures of 80°C at most.
これらの抵抗体の形成方法に代るものとして、
溶射により抵抗体を形成する方法が開発されてい
る。この溶射による抵抗体の形成方法は、プラズ
マ溶射ガンと称せられる亀極間に、不活性ガスと
してアルゴンまたはヘリウムの混合ガスを供給
し、亀極間に電気アークを発生させてガスを励起
させ、熱プラズマを生じさせる。この熱プラズマ
の発生した炎の中に抵抗体の材料である粉体を導
入して溶かし、溶かしたままの状態で抵抗体の形
成材料を基板状の所定領域に付着させるものであ
る。 As an alternative to these resistor formation methods,
A method of forming a resistor by thermal spraying has been developed. This method of forming a resistor by thermal spraying involves supplying a mixed gas of argon or helium as an inert gas between the electrodes of a plasma spray gun, and generating an electric arc between the electrodes to excite the gas. Generates thermal plasma. Powder, which is the material of the resistor, is introduced into the flame generated by this thermal plasma and melted, and the resistor-forming material is adhered to a predetermined area of the substrate while being melted.
このような溶射技術を採用した抵抗体の形成方
法は、既に知られ、例えば特開昭53−52995、特
開昭55−146906の各号公報にも示されている。何
れも、抵抗体材料をプラズマ溶射して抵抗体被覆
を推積した膜状抵抗体の製造方法について述べて
いる。 A method of forming a resistor using such a thermal spraying technique is already known, and is also disclosed in, for example, Japanese Patent Application Laid-Open Nos. 53-52995 and 1987-146906. All of them describe a method for manufacturing a film resistor in which a resistor coating is deposited by plasma spraying a resistor material.
しかし、記述されているところのに従つて形成
された厚い膜状抵抗体は、その抵抗特性を一定に
しない欠点が認められる。抵抗値が安定せず、熱
履歴があるとき抵抗値が例えば−30℃〜＋150℃
の熱履歴の前後で異なる値を示し、繰返される熱
履歴についてその抵抗値が増大してゆく現象がみ
られるのである。このため温度によつて一次的に
抵抗値が決まらないという本質的な欠点を伴う。
即ち、従来の溶射法を用い、前述の抵抗体をはじ
め、各種の電子部品を形成しようとする場合は、
大気中で金属、合金、セラミツク等を単独又は混
合粉末として溶融状態で絶縁基板上に溶射するた
めに溶射特有の空孔が被覆層に介在する。更に、
大気中で溶射するために金属、合金が酸化するな
どして被覆層の付着力および抵抗特性が不安定で
ある欠点を有していた。そのため、粉末の粒度調
整や溶射条件を選択することによつて被覆層の空
孔低下および付着力はある程度改善させられる。
しかし、熱履歴による抵抗等の電気特性変動を防
ぐ充分な方策ではない。 However, the thick film resistor formed according to the method described has the disadvantage that its resistance characteristics are not constant. If the resistance value is not stable and there is a thermal history, the resistance value may be between -30℃ and +150℃, for example.
The resistance value shows different values before and after the thermal history, and a phenomenon is observed in which the resistance value increases with repeated thermal history. Therefore, there is an essential drawback that the resistance value is not determined primarily by temperature.
In other words, when trying to form various electronic components such as the aforementioned resistor using the conventional thermal spraying method,
Since metals, alloys, ceramics, etc. are thermally sprayed alone or as a molten powder onto an insulating substrate in the atmosphere, pores unique to thermal spraying are present in the coating layer. Furthermore,
This method has the disadvantage that the adhesion and resistance properties of the coating layer are unstable due to oxidation of the metal and alloy due to thermal spraying in the atmosphere. Therefore, by adjusting the particle size of the powder and selecting thermal spraying conditions, the porosity reduction and adhesion of the coating layer can be improved to some extent.
However, this is not a sufficient measure to prevent changes in electrical characteristics such as resistance due to thermal history.
［発明の目的］
この発明は溶射によつて形成される抵抗体等の
電子部品の温度変動に対する安定性を改良させた
電子部品の形成方法を提供させるものである。[Object of the Invention] The present invention provides a method for forming an electronic component, such as a resistor, formed by thermal spraying, which improves stability against temperature fluctuations.
［発明の概要］
本発明は、基板に形成する全ての電子部品の形
成領域が露出するようにレジスト膜やメタルマス
クを設け、それぞれ所望の電子部品の形成領域毎
に対応した形状と配置のマスクを用い、30Torr
〜200Torr減圧下の調整雰囲気で溶射法により被
覆性能が高く、かつ温度特性に安定な電子部品を
形成できるようにした電子部品の形成方法であ
る。[Summary of the Invention] The present invention provides a resist film or a metal mask so that all electronic component formation regions to be formed on a substrate are exposed, and each mask has a shape and arrangement corresponding to each desired electronic component formation region. using 30Torr
This is a method for forming electronic components that has high coating performance and stable temperature characteristics by thermal spraying in a controlled atmosphere under a reduced pressure of ~200 Torr.
［発明の実施例］
以下、本発明により抵抗体を形成する実施例を
図面を参照して説明する。[Embodiments of the Invention] Hereinafter, embodiments of forming a resistor according to the present invention will be described with reference to the drawings.
先ず、40×50mm、厚さ２mm、のアルミニウム板
の片面に100μｍのアルミナ絶縁層を施した基板
４を第１図に示す真空容器１の固定治具５に設置
する。基板を設置後容器内を10-4Torr程度に減
圧し、Ni−Cr粉末の溶射条件設定と同時に容器
内を70TorrのAr／Hlガス雰囲気に調整する。 First, a substrate 4 made of an aluminum plate measuring 40×50 mm and having a thickness of 2 mm and having an alumina insulating layer of 100 μm on one side is placed in the fixing jig 5 of the vacuum vessel 1 shown in FIG. After installing the substrate, the pressure inside the container is reduced to about 10 -4 Torr, and at the same time as setting the spray conditions for Ni-Cr powder, the inside of the container is adjusted to an Ar/Hl gas atmosphere of 70 Torr.
しかる後、Ni−Cr粉末を金属マスクを通して
溶射し、厚さ20μｍの抵抗体を形成する。同様
に、Cu粉末を溶射し電極端部を抵抗体の端部と
接続するようにメタルマスクを通して6gumの電
極を形成する。形成された抵抗体断面の組成図を
第２図に示す。第２図ｂの断面図に示すように
70Torr下で形成された被膜は空孔のない性能の
高い被膜が得られるのに比べ大気中760Torr(a)で
形成され被膜は空孔とともに酸化層が介在し抵抗
体被膜としては充分でない。 Thereafter, Ni-Cr powder is sprayed through a metal mask to form a resistor with a thickness of 20 μm. Similarly, a 6-gum electrode is formed by spraying Cu powder through a metal mask so that the end of the electrode is connected to the end of the resistor. A composition diagram of a cross section of the resistor thus formed is shown in FIG. As shown in the cross-sectional view of Figure 2b
A film formed under 70 Torr provides a high performance film with no pores, whereas a film formed under 760 Torr(a) in the atmosphere contains pores and an oxide layer, making it insufficient as a resistor film.
一方、電極Cuも70Torrの雰囲気で溶射するこ
とによつて被膜は酸化することなく光沢のある電
極が得られ電極自身の付着力と同様に抵抗体との
付着力も向上する。この実施例に係る抵抗体と、
大気中で溶射した比較例抗体について20℃から
150℃への繰返し熱履歴による抵抗値変化率（％）
について第３図に示す。 On the other hand, by thermally spraying the Cu electrode in an atmosphere of 70 Torr, a glossy electrode is obtained without oxidizing the coating, and the adhesion to the resistor is improved as well as the adhesion of the electrode itself. A resistor according to this embodiment,
Regarding the comparative antibody sprayed in the atmosphere from 20℃
Resistance change rate (%) due to repeated thermal history to 150℃
This is shown in Figure 3.
実施例に係る抵抗体(1)の抵抗値は熱履歴によつ
て変動しないが、比較例に係る抵抗体(2)は熱履歴
によつて抵抗値が変動し、抵抗値を不安定にし、
抵抗体として使用に適さない。 The resistance value of the resistor (1) according to the example does not vary depending on the thermal history, but the resistance value of the resistor (2) according to the comparative example fluctuates depending on the thermal history, making the resistance value unstable.
Not suitable for use as a resistor.
尚、上記実施例においては、NiCr粉末を用い
て説明したが、これに限らず抵抗性物質であれば
よいことは勿論である。 In the above embodiments, NiCr powder was used, but the material is not limited to this, and any resistive material may be used.
また、抵抗性物質に限らず、次に示すような各
種電子部品の形成にも、本発明が有効である。例
えば、BaTiO3、PbTiO3等のコンデンサー、圧
電素子、LiTaO3、LiNbO3等の弾性表面波部品、
ZnO等のバリスター、SnO2等のガスセンサー、
ZnCr2O4等の湿度センサー、V2O5、MgAl2O4等の
サーミスターおよびCu、Al、Pt等の配線、電線
などの電子部品にも同様に適用できる。 Furthermore, the present invention is effective not only for forming resistive materials but also for forming various electronic components such as those shown below. For example, capacitors such as BaTiO 3 and PbTiO 3 , piezoelectric elements, surface acoustic wave components such as LiTaO 3 and LiNbO 3 ,
Varistors such as ZnO, gas sensors such as SnO2 ,
It can be similarly applied to humidity sensors such as ZnCr 2 O 4 , thermistors such as V 2O5 and MgAl 2 O 4 , and electronic components such as wiring and electric wires made of Cu, Al, Pt, etc.
［発明の効果］
以上のようにして形成された抵抗体等の電子部
品は、熱履歴によつて抵抗値等の電気特性を変化
させることなく、安定した電子部品として実用価
値を向上し、回路部品としての応用範囲が拡がり
実用に好適する。[Effects of the Invention] Electronic components such as resistors formed as described above do not change electrical characteristics such as resistance value due to thermal history, improve practical value as stable electronic components, and improve circuit performance. The range of applications as parts has expanded and it is suitable for practical use.
第１図は、減圧下での溶射施工の概略図であ
る。第２図は、比較例(a)と本発明の一実施例(b)に
係る抵抗体の断面の組織図である。第３図は、実
施例並びに比較例抵抗体に繰返し熱履歴を施した
時の抵抗変化率を示す線図である。
１：真空容器、２ａ：溶射ガン、２ｂ：粉末供
給管、２ｃ：作動サス管、２ｄ：電源ホース、
３：プラズマ炎、４：基板、５：基板固定治具、
６：真空ポンプ。
FIG. 1 is a schematic diagram of thermal spraying under reduced pressure. FIG. 2 is a cross-sectional organization chart of a resistor according to a comparative example (a) and an example (b) of the present invention. FIG. 3 is a diagram showing the rate of change in resistance when the example and comparative example resistors are subjected to repeated thermal history. 1: Vacuum container, 2a: Thermal spray gun, 2b: Powder supply pipe, 2c: Operation suspension pipe, 2d: Power hose,
3: Plasma flame, 4: Substrate, 5: Substrate fixing jig,
6: Vacuum pump.
Claims (1)
200Torrの不活性雰囲気下で溶射形成させること
を特徴とする電子部分の形成方法。1 Electronic component materials are placed on an insulating substrate at 30 Torr~
A method for forming an electronic part, characterized by thermal spraying in an inert atmosphere of 200 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22676182A JPS59119701A (en) | 1982-12-27 | 1982-12-27 | Method of forming resistance material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22676182A JPS59119701A (en) | 1982-12-27 | 1982-12-27 | Method of forming resistance material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119701A JPS59119701A (en) | 1984-07-11 |
| JPH047082B2 true JPH047082B2 (en) | 1992-02-07 |
Family
ID=16850196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22676182A Granted JPS59119701A (en) | 1982-12-27 | 1982-12-27 | Method of forming resistance material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119701A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6075081A (en) | 1997-04-23 | 2000-06-13 | Ansell Healthcare Products Inc. | Manufacture of rubber articles |
| AU2003261394A1 (en) | 2002-08-05 | 2004-02-23 | Research Foundation Of The State University Of New York | System and method for manufacturing embedded conformal electronics |
-
1982
- 1982-12-27 JP JP22676182A patent/JPS59119701A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59119701A (en) | 1984-07-11 |
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