JPH0472653U - - Google Patents

Info

Publication number
JPH0472653U
JPH0472653U JP1990116301U JP11630190U JPH0472653U JP H0472653 U JPH0472653 U JP H0472653U JP 1990116301 U JP1990116301 U JP 1990116301U JP 11630190 U JP11630190 U JP 11630190U JP H0472653 U JPH0472653 U JP H0472653U
Authority
JP
Japan
Prior art keywords
chip
central part
gate
voltage
surrounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990116301U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990116301U priority Critical patent/JPH0472653U/ja
Publication of JPH0472653U publication Critical patent/JPH0472653U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Wire Bonding (AREA)

Description

【図面の簡単な説明】
第1図a及びbは本考案の第1の実施例のそれ
ぞれソースアルミ除去後のチツプの構造図および
ソースアルミ付加時のチツプの平面模式図、第2
図は第1図の縦型パワーMOSFETの動作を説
明するための波形、電力損失、チヤネル温度、カ
ツトオフ電圧の波形図、第3図は本考案の第2の
実施例のソースアルミ付加時のチツプの平面模式
図である。 1……パワーMOSFETチツプ、2……チツ
プ中央部、3……チツプ周辺部、4……分離帯、
5……ゲートボンデイング部、6,6a……ゲー
ト抵抗、7……ゲートフインガ、8……ソースボ
ンデイング部、9……ソースワイヤ、10……ゲ
ートワイヤ、5a……補助ゲートボンデイング、
10a……補助ゲートワイヤ。

Claims (1)

    【実用新案登録請求の範囲】
  1. 一導電型半導体基板上のチツプ中央部と、該チ
    ツプ中央部よりも低いゲート・ソース間カツトオ
    フ電圧を有しかつ半導体酸化膜を介して前記チツ
    プ中央部を囲んで分離されたチツプ周辺部の分離
    ゲート電極を含むことを特徴としたMOS電界効
    果トランジスタ。
JP1990116301U 1990-11-06 1990-11-06 Pending JPH0472653U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990116301U JPH0472653U (ja) 1990-11-06 1990-11-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990116301U JPH0472653U (ja) 1990-11-06 1990-11-06

Publications (1)

Publication Number Publication Date
JPH0472653U true JPH0472653U (ja) 1992-06-26

Family

ID=31864116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990116301U Pending JPH0472653U (ja) 1990-11-06 1990-11-06

Country Status (1)

Country Link
JP (1) JPH0472653U (ja)

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