JPH0480931A - Semiconductor device and formation thereof - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device, and in particular, a semiconductor pellet is mounted on a tab supported by a tab suspension lead, and a semiconductor pellet is mounted between an external terminal and an inner lead of the semiconductor pellet. The present invention relates to a technique that is effective when applied to semiconductor devices in which the semiconductor devices are connected using bonding wires.

[Conventional technology]

QFP (Quad Flat Package)
ASIC (Application Specification) such as
A semiconductor device compatible with IFIC (integrated C1rcuit) is used. In the semiconductor device, a semiconductor pellet is mounted on a tab whose four corners are supported by tab suspension leads, an external terminal of this semiconductor pellet and an inner lead are connected with a bonding wire, and the semiconductor pellet and inner lead are sealed with a resin. It is constructed by stopping.

In the case of the semiconductor device, since each user has different requirements,
The specifications of the semiconductor pellet and the shape of the inner leads were changed for each user. However, this method requires many types of lead frames, making the process of forming the semiconductor device complicated.

Therefore, a method has been adopted to meet the needs of each user by mounting various semiconductor pellets on a common lead frame and changing the routing of bonding wires.

However, when changing the bonding wire routing,
The length of the bonding wire becomes longer.

If the length of the bonding wire becomes long, the bonding wires will short-circuit during the subsequent bonding process or molding process. Therefore, coated bonding wires, which are bonding wires coated with resin, are used.

The method for forming the semiconductor device will be briefly described below.

First, a semiconductor pellet is mounted on a tab of a lead frame. The four corners of the tab are supported by a lead frame via tab suspension leads.

Next, the lead frame is placed on a bonder jig. This jig includes a member for controlling the loop shape of the bonding wire (hereinafter referred to as bank sesame) at a position corresponding to the area between the tab of the lead frame and the inner lead, excluding the area where the tab suspension lead is placed. ) are placed. In order to remove the bonded lead frame and place a new lead frame, each of the inner leads, tabs, and tab hanging leads are separated from the bank piece by a predetermined distance.

Next, the external terminal of the semiconductor pellet and the inner lead are connected using a covered bonding wire. As mentioned above, since the length of the bonding wire is long, slack occurs during bonding. When slack occurs in the bonding wire, the strength of the bonding wire decreases. In addition, since the tab and inner lead are heated during bonding, if the bonding wire becomes slack and comes into contact with the tab or inner lead, the coating of the bonding wire will melt.
The coating will peel off. Therefore, the bank sesame is arranged,
By controlling the shape of the bonding wire, it is possible to reduce the strength of the bonding wire and reduce the peeling of the coating.

Thereafter, the semiconductor device is completed by performing a molding process, an outer lead shaping process, and the like.

[Problem to be solved by the invention]

However, as a result of studying the above-mentioned prior art, the inventor found the following problems.

The problems will be explained using FIG. 6 (a plan view of the main part for explaining the problems of the prior art).

As shown in FIG. 6, each of the tab hanging lead 6 and the inner lead 7 is separated from the bank piece 11 by a predetermined distance. Inner lead 7 adjacent to tab suspension lead 6
When the covered bonding wire 8 connected to the bank is arranged as shown by the solid line in FIG. 6, the covered bonding wire 8 is arranged on the bank piece 11, so that sagging can be controlled. However, when the covered bonding wire 8 connected to the inner lead 7 adjacent to the tab hanging lead 6 is arranged as shown by the dotted line in FIG. is placed. In other words, the covered bonding wire 8 falls from the bank piece 11. In this case, as shown in FIG. 7 (a cross-sectional view of the main part corresponding to the cross section taken along the line 1-1 in FIG. 6), the coated bonding wire 8 becomes slack and the strength of the coated bonding wire 80 decreases. .

Further, since the covered bonding wire 8 comes into contact with the tab 5 and the inner lead 7, the covering of the covered bonding wire 8 may peel off. In this way, the strength of the coated bonding wire 8 decreases and the coating peels off, resulting in a problem that the reliability of the semiconductor device decreases.

An object of the present invention is to improve reliability in a semiconductor device in which a semiconductor pellet is mounted on a tab supported via a tab suspension lead, and an external terminal of the semiconductor pellet and an inner lead are connected by a bonding wire. Our goal is to provide technology that makes it possible.

Another object of the present invention is to provide a method for forming a semiconductor device in which a semiconductor pellet is mounted on a tab supported via a tab suspension lead, and an external terminal of the semiconductor pellet and an inner lead are connected by a bonding wire. The goal is to provide technology that can improve reliability.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

(1) In a semiconductor device in which a semiconductor pellet is mounted on a tab supported via a tab suspension lead, and an external terminal of the semiconductor pellet and an inner lead are connected by a bonding wire, the tab suspension lead is connected to one of the tabs. The inner leads are deformed in the direction of arrangement of the inner leads arranged on the side.

(2) The distance between the inner lead and the tab near the tab suspension lead is made larger than the distance between the other inner leads and the tab.

(3) The interval between the inner lead adjacent to the tab suspension lead and the tab suspension lead is made larger than the interval between other inner leads.

(4) On a jig in which a semiconductor pellet is mounted on a tab supported by a tab suspension lead, and a wire loop shape control member is arranged between the tab and the inner lead except for the area where the tab suspension lead is arranged. A method for forming a semiconductor device in which a lead frame is mounted and the external terminal of the semiconductor pellet and the inner lead of the lead frame are connected by a bonding wire, wherein the tab suspension lead is
the inner leads arranged on one side thereof are deformed in the arrangement direction, or the distance between the inner leads and the tab near the tab suspension lead is made larger than the distance between the other inner leads and the tab, or the The wire loop shape control member is configured such that the distance between the inner lead adjacent to the tab suspension lead and the tab suspension lead is made larger than the distance between the other inner leads, and corresponds to the deformed tab suspension lead or inner lead. Place.

[For production]

According to the above-mentioned means (1) to (3), the loop shape control member (bank sesame) is arranged below the arrangement area of the bonding wire connected to the inner lead adjacent to or in the vicinity of the tab suspension lead. The slack of the bonding wire is controlled. Therefore,
Since strength reduction and coating peeling due to bonding wire slack are reduced, the reliability of the semiconductor device can be improved.

According to the above-mentioned means (4), when connecting the external terminal of the semiconductor pellet and the inner lead with a bonding wire, the bonding wire connected to the inner lead adjacent to or in the vicinity of the tab suspension lead is Since the bonding wire is disposed on the loop shape control member (bank sesame), the slack of the bonding wire is controlled. Therefore, a decrease in strength and peeling of the coating due to slack in the bonding wire are reduced, so that the reliability of the semiconductor device can be improved.

[Embodiments of the Invention] Examples of the present invention will be specifically described below with reference to the drawings.

In addition, in an attempt to explain the embodiments, parts having the same functions are given the same reference numerals, and repeated explanation thereof will be omitted.

[Example I] The configuration of the QFP structure semiconductor device of Example (2) of the present invention is as follows:
Figure 1 (Plan view of main parts to explain the outline of the overall configuration)
Explain using. Note that, in FIG. 1, sealing resin and the like are not shown.

As shown in FIG. 1, the semiconductor device includes a semiconductor pellet l placed on a tab 5 whose four corners are supported by tab suspension leads 6
It is equipped with The tabs 5 are, for example, 7, 2 [
am] is about the size of an angle. The tab suspension lead 6 has a diameter of 0 to 25 to ensure the strength of the lead frame.
[It is configured with a width of about +am1. A plurality of external terminals (ponding pads) 2 are arranged on the outer periphery of the semiconductor pellet 1 . These external terminals 2 are connected to wiring in the active region inside the semiconductor pellet 1.

A plurality of inner leads 7 are arranged around the tab 5 at predetermined intervals. These inner leads 7
The arrangement pitch of the ends on the tab 5 side is, for example, 300 [
It is about μ011. These inner leads 7 and the plurality of external terminals 2 are electrically connected via covered bonding wires 8. The lead frame shown in FIG. 1 is a common lead frame that can accommodate various semiconductor pellets 1. Therefore,
Some of the plurality of inner leads 7 are not connected to the covered bonding wire 8.

The tab 5 side of the tab suspension lead 6 is connected to the tab suspension lead 6.
It is deformed in the arrangement direction of the inner leads 7 arranged on one side. Further, this tab suspension lead 6 is connected to the tab 5 in a crank shape, avoiding the apex portion of the corner of the tab 5.

At the position shown by the dotted line in FIG. 1, a loop shape control member (11) (hereinafter referred to as a bank separator) of a jig used during bonding is arranged. The shape of this bank piece (11) corresponds to the shape of the deformed tab suspension lead 6. Therefore, the bank sesame (11) is connected to the tab 5.
It has a double shape between the tab 5 and the inner lead 7 at a part of the corner.

As can be seen from the above description, according to the configuration of the present embodiment I, under the arrangement area of the covered bonding wire 8 connected to the inner lead 7 near the tab suspension lead 6,
Since the bank separator (11) can be arranged, the slack of the covered bonding wire 8 can be removed by the bank separator (11).
) controlled by Therefore, a decrease in strength and peeling of the coating due to slack in the coated bonding wire 8 are reduced, so that the reliability of the semiconductor device can be improved.

Next, a method for forming the semiconductor device will be explained.

First, the semiconductor pellet 1 is mounted on the tab 5.

This tab 5 is supported by a lead frame via a tab suspension lead 6. In addition, this tab hanging lead 6 is
It is deformed in the arrangement direction of the inner leads 7 arranged on one side thereof.

Next, the lead frame on which the semiconductor pellet 1 is mounted is placed on a bonder jig. On this jig, there is a second
As shown in the figure (an enlarged plan view of the main part of a region corresponding to a part of the corner in FIG. 1), the bank tops 11 are arranged. This bank piece 11 is arranged between the tab 5 and the inner lead 7 except for the area where the tab hanging lead 6 is arranged. Further, this bank piece 11 is arranged corresponding to the deformed tab hanging lead 6. In addition, in the shaded part of the middle top separator 11 in FIG. 2, the gap between the bank separator 11 and the inner lead 7 is large, so the slack is larger than other parts, so in order to control the slack, The height is higher than other parts.

The tab 5, the tab hanging lead 6, and the inner lead 7 are spaced from each other by about 0.25 [l] from the bank piece 11. This interval is a margin for removing the lead frame for which bonding has been completed and placing a new lead frame. In addition, bank sesame 11 is
Since it is formed by electric discharge machining, the machining accuracy is 0.15[+u
+] width. Further, the height of the bank sesame 11 is approximately 0.5 [mm], and the height of the shaded portion is approximately 1.0 [mm].

Next, bonding is performed between the external terminal 2 of the semiconductor pellet 1 and the inner lead 7 using a covered bonding wire 8. The coated bonding wire 8, which is bonded by the thermosonic bonding method, has a core material of, for example, 30 [μm]φ.
The cover material is made of polyurethane resin with a thickness of about 1 [μm].

In FIG. 2, when the covered bonding wires 8 are arranged along the route shown by the solid line, there is a bank piece 11A under the arrangement area of the bonding wires 8 connected to the inner leads 7A to 7C, so these covered bonding The slack of the wire 8 is controlled. In the case of the covered bonding wire 8 connected to the inner lead 7D, if the conventional bank separator shape is used, the covered bonding wire will fall from the bank separator. On the other hand, in this embodiment I, the coated bonding wire 8 connected to the inner lead 7D
Since there is a bank sesame IIA under the arrangement area, the slack of the covered bonding wire 8 is controlled. Since there are banks IIA and IIB under the area where the covered bonding wire 8 connected to the inner lead 7E is arranged, the slack of the covered bonding wire 8 is controlled. Since there is a bank separator 11B under the arrangement area of the covered bonding wire 8 connected to the inner lead 7F,
The slack of the coated bonding wire 8 is controlled.

In this way, when the covered bonding wire 8 is arranged along the path shown by the solid line in FIG. Since there are the bank pieces 11A and 11B, the slack of the covered bonding wire 8 is controlled.

In the case where the covered bonding wire 8 is arranged along the route shown by the dotted line in FIG. 2, there are
Because of the bank sesame IIA, the sagging of these coated bonding wires 8 is controlled. Since there is a bank block 11B under the arrangement area of the covered bonding wires 8 connected to the inner leads 7D to 7F, the slack of these covered bonding wires 8 is controlled.

In this way, when the covered bonding wire 8 is arranged along the route shown by the dotted line in FIG. Since there are bank sesame pieces 11A and 11B, these coated bonding wires 8
sag is controlled.

As can be seen from the above description, according to the method for forming a semiconductor device according to the present embodiment Because of the sesame seeds IIA and 11B, the sagging of the coated bonding wire 8 is controlled. Therefore, the decrease in strength of the coated bonding wire 8 and the occurrence of peeling of the coating are reduced, so that the reliability of the semiconductor device can be improved.

Thereafter, the semiconductor device of Example I is completed by performing a molding process, an outer lead shaping process, and the like.

Next, the size of the semiconductor pellet 1 is variously changed,
The semiconductor device of Example I and the conventional semiconductor device were examined to determine whether the coated bonding wire 8 would fall from the embankment block 11. The results are shown in Table 1. Note that the number of coated bonding wires 8 bonded was 10,000.

Below is the margin.

Table 1 As shown in Table 1, a semiconductor pellet 1 of 2.5 to 6.5 [■III] square was mounted on the tab 5 and bonded.

As can be seen from Table 1, according to the configuration and formation method of Example I, the covered bonding wire 8 connected to the inner lead 7 near the tab suspension lead 6 does not fall from the bank piece 11. .

Next, when the tab suspension lead 6 does not support a part of the corner of the tab 5, for example, D I P (Dual I
A case of a semiconductor device having an n-1ine package structure will be described.

As shown in FIG. 3 (a plan view of the main parts of the DIP structure semiconductor device of Example I), the tab suspension lead 6 is deformed in the arrangement direction of the inner leads 7 arranged on one side thereof. . Further, a bank piece 11 is arranged corresponding to the deformed tab suspension lead 6.

When the covered bonding wire 8 is arranged along the respective paths shown by the solid lines and dotted lines in FIG. .

As can be seen from the above description, even in the case of a semiconductor device with a DIP structure, the slack of the covered bonding wire 8 is controlled, so that a decrease in the strength of the covered bonding wire 8 and peeling of the coating are reduced. Thereby, the reliability of the semiconductor device can be improved.

[Example ■] The schematic structure of a semiconductor device according to Example ■ of the present invention is shown in FIG.
This will be explained using a main part plan view showing a region corresponding to FIG. 2 above.

As shown in FIG. 4, in the semiconductor device of the present embodiment (2), the tab suspension lead 6 is configured in a straight line, and the tab suspension lead 6 supports the apex portion of the corner of the tab 5. Inner lead 7A near hanging lead 6
The intervals between 7D to 7D and the tabs 5 are made larger than the intervals between the other inner leads 7 and the tabs 5. Further, the bank piece 11 is arranged corresponding to the deformed inner lead 7.

According to the configuration of the present embodiment (2), even if the covered bonding wires 8 are connected to the inner leads 7A to 7D near the tab suspension lead 6 through the respective paths shown by solid lines and dotted lines in FIG. Since the bank sesame 11 can be placed under the area where the covered bonding wire 8 is placed,
The slack of the coated bonding wire 8 is controlled. Therefore, the strength reduction and peeling of the coated bonding wire 8 are reduced, so that the reliability of the semiconductor device can be improved.

Next, a method for forming the semiconductor device of Example 2 will be explained.

First, as in Example I, the semiconductor pellet 1 is mounted on the tab 5. A tab hanging lead 6 that supports this tab 5
is formed in a straight line and supports the apex portion of the corner of the tab 5. Further, the distance between the tab 5 and the inner leads 7A to 7D near the tab suspension lead 6 is larger than the distance between the other inner leads 7 and the tab 5.

Next, the lead frame is placed on a bonder jig. A bank block 11 is arranged on this jig. This bank piece 11 is arranged between the tab 5 and the inner lead 7 except for the area where the tab hanging lead 6 is arranged. Moreover, this bank piece 11 is arranged corresponding to the deformed inner lead 11. In the case of the present embodiment (2), there is no large part between the inner lead 7 and the bank block 11 as in the case of the above-mentioned embodiment (2), so there is no need to partially increase the height of the bank block 11.

That is, the height of the bank top 11 is constant.

Thereafter, a bonding process, a molding process, an outer lead shaping process, etc. are performed to complete the semiconductor device of Example 2.

As can be understood from the above explanation, according to the forming method of the present embodiment (2), the inner lead 7A near the tab hanging lead 6
Since there is a bank block 11 under the arrangement area of the covered bonding wires 8 connected to 7D, the slack of the covered bonding wires 8 is controlled. Therefore, it is possible to reduce the decrease in strength and peeling off of the coating due to the slack of the covered bonding wire 8, thereby improving the reliability of the semiconductor device.

[Example ■] The schematic configuration of a semiconductor device according to Example ■ of the present invention is shown in FIG.
This will be explained using a main part plan view showing a region corresponding to FIG. 2 above.

As shown in FIG. 5, in the semiconductor device of the present embodiment (2), the tab suspension lead 6 is configured in a straight line, and the tab 5 is supported by the tab suspension lead 6 while avoiding a part of the corner of the tab 5. In addition, the interval between the inner lead 7 adjacent to the tab suspension lead 6 and the tab suspension lead 6 is made larger than the interval between other inner leads 7. Further, the bank piece 11 is arranged corresponding to the deformed inner lead 7.

According to the configuration of the present embodiment (2), the coated bonding wires 8 are connected to the inner leads 7A and 7B adjacent to the tab suspension lead 6 in the respective paths shown by solid lines and dotted lines in FIG.
Even if these are connected, the bank sesame 11 can be arranged under the arrangement area of these covered bonding wires 8, so that the slack of the covered bonding wires 8 can be controlled. Therefore, a decrease in strength and peeling of the coating due to slack in the coated bonding wire 8 are reduced, so that the reliability of the semiconductor device can be improved.

Next, a method for forming the semiconductor device of Example 2 will be explained.

First, as in Example I, the semiconductor pellet 1 is mounted on the tab 5. A tab hanging lead 6 that supports this tab 5
is formed in a straight line and supports the tab 5 while avoiding a part of the corner of the tab 5.

Further, the distance between the inner leads 7A and 7B adjacent to this tab suspension lead 6 and the tab suspension lead 6 is larger than the distance between other inner leads 7.

Next, the lead frame is placed on a bonder jig. A bank block 11 is arranged on this jig. This bank piece 11 is arranged between the tab 5 and the inner lead 7 except for the area where the tab hanging lead 6 is arranged. Further, the bank piece 11 is arranged corresponding to the deformed inner lead 7. This example■
In the case of , there is no part where the distance between the inner lead 7 and the bank separator 11 is large as in the above embodiment (2), so the bank separator 1
There is no need to partially increase the height of the bank block 11, that is, the height of the bank block 11 is constant.

Thereafter, a bonding process, a molding process, an outer lead shaping process, etc. are performed to complete the semiconductor device of Example 2.

As can be seen from the above description, according to the method for forming a semiconductor device of the present embodiment (2), since there is a bank piece 11 under the area where the covered bonding wire 8 is arranged, the slack of the covered bonding wire 8 is controlled. Therefore, it is possible to reduce the decrease in strength and peeling off of the coating due to the slack of the covered bonding wire 8, thereby improving the reliability of the semiconductor device.

The present invention has been specifically explained above based on examples, but
It goes without saying that the present invention is not limited to the embodiments described above, and can be modified in various ways without departing from the spirit thereof.

〔Effect of the invention〕

To briefly explain the effects obtained by a typical invention among the inventions disclosed in this application, a semiconductor pellet is mounted on a tab supported via a tab suspension lead as described below, and the outside of the semiconductor pellet is Reliability can be improved in a semiconductor device in which a terminal and an inner lead are connected by a bonding wire.

Reliability can be improved in a method for forming a semiconductor device in which a semiconductor pellet is mounted on a tab supported via a tab suspension lead, and an external terminal of the semiconductor pellet and an inner lead are connected with a bonding wire. .

[Brief explanation of the drawing]

1 is a plan view of a main part of a semiconductor device having a QFP structure according to Embodiment I of the present invention; FIG. 2 is a plan view of a main part showing an enlarged portion corresponding to the main part of the semiconductor device; 4 is a plan view of a main part of a semiconductor device of DIP structure according to Embodiment I of the present invention. FIG. 4 is a plan view of a main part of a semiconductor device of Embodiment 1 of the present invention. FIG. FIG. 2 is a plan view of the main parts of the semiconductor device of Example (2). FIG. 6 is a plan view of the main parts of a conventional semiconductor device, and FIG.
FIG. 6 is a sectional view corresponding to the section taken along line 1-1 in FIG. 6; In the figure, 1... semiconductor chip, 2... external terminal, 5...
...Tab, 6...Tab suspension lead, 7...Inner lead, 8...Coated bonding wire, 11...
It is a bank sesame.

Claims (1)

[Claims] 1. In a semiconductor device in which a semiconductor pellet is mounted on a tab supported via a tab suspension lead, and an external terminal of the semiconductor pellet and an inner lead are connected by a bonding wire, the tab suspension A semiconductor device characterized in that a lead is deformed in the direction of arrangement of inner leads arranged on one side of the lead. 2. The semiconductor device according to claim 1, wherein the distance between the inner lead and the tab near the tab suspension lead is larger than the distance between the other inner leads and the tab. 3. The semiconductor device according to claim 1, wherein the interval between the inner lead adjacent to the tab suspension lead and the tab suspension lead is larger than the interval between other inner leads. 4. A semiconductor pellet is mounted on a tab supported by a tab suspension lead, and a wire loop shape control member is placed between the tab and the inner lead except for the area where the tab suspension lead is placed on a jig. , place the lead frame,
In the method for forming a semiconductor device in which the external terminal of the semiconductor pellet and the inner lead of the lead frame are connected with a bonding wire, the tab suspension lead is deformed in the arrangement direction of the inner leads arranged on one side thereof; Alternatively, the interval between the inner lead and the tab near the tab suspension lead is made larger than the interval between other inner leads and the tab, or the interval between the inner lead adjacent to the tab suspension lead and the tab suspension lead. is larger than the interval between other inner leads, and the wire loop shape control member is arranged in correspondence with the deformed tab hanging lead or the inner lead.