JPH0481555B2 - - Google Patents
Info
- Publication number
- JPH0481555B2 JPH0481555B2 JP61077002A JP7700286A JPH0481555B2 JP H0481555 B2 JPH0481555 B2 JP H0481555B2 JP 61077002 A JP61077002 A JP 61077002A JP 7700286 A JP7700286 A JP 7700286A JP H0481555 B2 JPH0481555 B2 JP H0481555B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- ultraviolet light
- sensitizer
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 27
- 229910003460 diamond Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 150000001722 carbon compounds Chemical class 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 230000002194 synthesizing effect Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001308 synthesis method Methods 0.000 claims 2
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000006552 photochemical reaction Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultraviolet light
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、気相からダイヤモンド膜又はダイヤ
モンド状炭素膜を基板上に析出させる方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for depositing a diamond film or a diamond-like carbon film on a substrate from a gas phase.
（従来技術と発明が解決しようとする問題点）
ダイヤモンド膜又はダイヤモンド状炭素膜を合
成する方法は、次のように分類される。(Prior Art and Problems to be Solved by the Invention) Methods for synthesizing a diamond film or a diamond-like carbon film are classified as follows.
１） CVD法
２） プラズマCVD法
３） イオンビーム法
４） スパツタ法
CVD法の例として、1982年発行のジヤパニー
ズ・ジヤーナル・オブ・アプライド・フイジクス
誌（Japanese Journal of Applied Physics）第
21巻第L183ページ記載の論文には、約2000℃に
加熱したタングステン線で水素ガスとメタンガス
の混合ガスと加熱し、シリコン、モリブデン又は
石英ガラス基板上にダイヤモンドを析出させる方
法が述べられている。この方法では、タングステ
ン線の高温加熱により、タングステンの蒸気圧が
高くなり、タングステンの活染が問題となる。更
に、タングステンとカーボンの反応及びガス分子
の吸蔵等により極めてもろくなる為、頻繁にタン
グステン線を交換せねばならず、長時間運転が困
難となる。またタングステン線の経時変化は反応
ガスの熱分解条件の変動を招き、広い面積に均一
に膜状ダイヤモンドを析出させるのは困難であ
る。更に、ダイヤモンドの析出温度は約800℃の
高温である欠点を有している。1) CVD method 2) Plasma CVD method 3) Ion beam method 4) Sputter method As an example of the CVD method, see the Japanese Journal of Applied Physics, No. 1, published in 1982.
The paper listed in Volume 21, page L183 describes a method of depositing diamond on a silicon, molybdenum, or quartz glass substrate by heating a mixed gas of hydrogen gas and methane gas with a tungsten wire heated to approximately 2000°C. . In this method, the vapor pressure of tungsten increases due to high-temperature heating of the tungsten wire, and live dyeing of tungsten becomes a problem. Furthermore, the tungsten wire becomes extremely brittle due to the reaction between tungsten and carbon and the occlusion of gas molecules, so the tungsten wire must be replaced frequently, making long-term operation difficult. In addition, changes in the tungsten wire over time cause changes in the thermal decomposition conditions of the reaction gas, making it difficult to uniformly deposit film-like diamond over a wide area. Furthermore, diamond has the disadvantage that its precipitation temperature is as high as approximately 800°C.
プラズマCVD法では、反応気体をマイクロ波
ないしは高周波によつて放電させ、発生したプラ
ズマ内に基板に設置してダイヤモンド膜を合成す
る方法であるが、基板温度が約800℃と高温であ
る欠点を有し、更に直接プラズマ内に基板を設置
するため、プラズマ損傷が発生したり、プラズマ
によつて基板ないし反応管がエツチングされダイ
ヤモンド膜内に混入する欠点を有している。 In the plasma CVD method, a diamond film is synthesized by discharging a reactive gas using microwaves or high-frequency waves and placing it on a substrate within the generated plasma. Furthermore, since the substrate is placed directly in the plasma, it has the disadvantage that plasma damage occurs and the substrate or reaction tube is etched by the plasma and mixed into the diamond film.
イオンビーム法及びスパツタ法では、基板温度
は低温であるが、主として得られるのは、ダイヤ
モンドに特性の似たアモルフアス・カーボンが主
である欠点を有している。 Although the substrate temperature is low in the ion beam method and the sputtering method, they have the disadvantage that the material obtained is mainly amorphous carbon, which has properties similar to diamond.
本発明の目的は、このような従来の欠点を除去
せしめて、低温でダイヤモンド膜を合成する方法
を提供するところにある。 An object of the present invention is to provide a method for synthesizing a diamond film at low temperatures by eliminating such conventional drawbacks.
（問題点を解決するための手段）
本発明によれば、紫外光を吸収する炭素化合物
の蒸気と増感剤の蒸気とを含む混合物に紫外光を
照射する工程を備えたことを特徴とするダイヤモ
ンドの合成法が得られる。(Means for Solving the Problems) According to the present invention, the present invention is characterized by comprising the step of irradiating a mixture containing the vapor of a carbon compound that absorbs ultraviolet light and the vapor of a sensitizer with ultraviolet light. A method for synthesizing diamonds is obtained.
（作 用）
本発明は、上述の構成をとることにより、従来
技術の問題点を解決した。気相からのダイヤモン
ド析出プロセスは、熱力学的に準安定な相を安定
化せしめる人工的操作を要求されるが、反応ガス
の熱分解からだけで遊離炭素原子を得ようとする
と、基板上に非ダイヤモンドが析出するのは自明
である。またプラズマを利用する方法において
も、プラズマの内部エネルギー範囲は広く、ダイ
ヤモンドとなるべき活性種だけを作るのは困難
で、非ダイヤモンド炭素が析出しやすくなるのも
自明であろう。従つて本発明においては、ダイヤ
モンド生成に有効なメチルラジカル、原子状水素
等を紫外光を用いた効率的かつ選択的に作り出
し、基板上にダイヤモンドを合成するプロセスを
提供する。また光による活性種からの合成である
ため、基板温度を上昇せずにすみダイヤモンドの
低温成長が可能となる。(Function) The present invention solves the problems of the prior art by adopting the above-described configuration. The process of diamond precipitation from the gas phase requires artificial manipulations to stabilize the thermodynamically metastable phase, but attempting to obtain free carbon atoms solely from pyrolysis of the reactant gas results in It is obvious that non-diamonds precipitate. Furthermore, in methods that utilize plasma, the internal energy range of the plasma is wide, and it is difficult to produce only the active species that will become diamond, so it is obvious that non-diamond carbon is likely to precipitate. Therefore, the present invention provides a process for efficiently and selectively producing methyl radicals, atomic hydrogen, etc. effective for diamond production using ultraviolet light, and synthesizing diamond on a substrate. Furthermore, since it is synthesized from active species using light, it is possible to grow diamond at a low temperature without increasing the substrate temperature.
増感剤を使用する理由を以下に示す。 The reason for using a sensitizer is shown below.
炭素源としてメタンを用いる場合、光子吸収等
を利用しない限り、約1460オングストローム以下
の真空紫外光を必要とする。ところがこのような
真空紫外域で強い光源は、現状では入手困難であ
る。そこで増感剤として、水銀、アンモニア等を
用いると、入手容易かつ光化学反応を引き起こす
のに十分なエネルギーを持つた水銀ランプ
（1849、2537オングストローム）又はフツ化アル
ゴン（ArF）エキシマーレーザー（1930オングス
トローム）フツ素（F2）エキシマーレーザー
（1570オングストロム）等の光源を利用できる。
増感剤の役割は、紫外光を吸収後、生成した励起
種ないし分解生成物と炭素化合物の蒸気と相互作
用して、メチルラジカル及び原子状水素を合成す
ることにある。 When using methane as a carbon source, vacuum ultraviolet light of approximately 1460 angstroms or less is required unless photon absorption or the like is used. However, such a light source that is strong in the vacuum ultraviolet region is currently difficult to obtain. Therefore, when using mercury, ammonia, etc. as a sensitizer, it is possible to use a mercury lamp (1849, 2537 angstrom) or an argon fluoride (ArF) excimer laser (1930 angstrom), which is easily available and has sufficient energy to cause a photochemical reaction. A light source such as a fluorine (F 2 ) excimer laser (1570 angstroms) can be used.
The role of the sensitizer is to synthesize methyl radicals and atomic hydrogen by interacting with the generated excited species or decomposition products and carbon compound vapor after absorbing ultraviolet light.
炭素化合物の蒸気は紫外光を吸収し、光分解し
てメチルラジカルを放出する物質である方が望ま
しいが、紫外光による光化学反応が生ずるもので
あればさしつかえない。このような物質の例とし
て、アセトン（（CH3）2CO）等のケトン類やベン
ゼン等が考えられる。 It is preferable that the vapor of the carbon compound is a substance that absorbs ultraviolet light and photodecomposes to release methyl radicals, but any substance that causes a photochemical reaction due to ultraviolet light is acceptable. Examples of such substances include ketones such as acetone ((CH 3 ) 2 CO) and benzene.
増感剤としては、紫外光を吸収し、炭素化合物
の蒸気と相互作用するものであればなんでもよい
が、光分解して、原子状水素を放出したり、炭素
化合物と反応してメチルラジカルを生成する物質
である方が望ましい。このような物質の例とし
て、アンモニア（NH3）、水銀等が考えられる。 Any sensitizer may be used as long as it absorbs ultraviolet light and interacts with the vapor of the carbon compound. It is preferable that it be a substance that generates. Examples of such substances include ammonia (NH 3 ), mercury, etc.
また水素は、増感剤と反応して原子状水素を放
出するので、炭素化合物の蒸気と増感剤の混合物
に混入すると効率的である。紫外光は強い程望ま
しいので、水銀ランプ及びエキシマーレーザーの
光をレンズで集光する方がよい。また、膜厚の均
一性及び大面積化には、集光した光を基板全面に
照射できるように、基板ないしは光軸をくりかえ
し移動させることも有効である。 Hydrogen also reacts with the sensitizer to release atomic hydrogen, so it is efficient to mix it into the mixture of carbon compound vapor and sensitizer. Since the stronger the ultraviolet light is, the more desirable it is, so it is better to focus the light from the mercury lamp and excimer laser with a lens. Furthermore, in order to make the film thickness uniform and increase the area, it is also effective to repeatedly move the substrate or the optical axis so that the entire surface of the substrate can be irradiated with the condensed light.
（実施例）
紫外光の波長は、光化学反応を生じる4000オン
グストローム以下であることが望ましい。以下、
図面を用いて本発明に使用した装置の例及び製造
工程の例を説明する。(Example) The wavelength of the ultraviolet light is preferably 4000 angstroms or less, which causes a photochemical reaction. below,
An example of an apparatus and an example of a manufacturing process used in the present invention will be explained using the drawings.
紫外光源９として、フツ化アルゴン（ArF）エ
キシマーレーザー及び水銀ランプを用いた。紫外
光は大気による吸収をさける為、真空装置６によ
つて100-3トール以下に真空引きされた光路15内
を通り、レンズ８により集光され基板１に照射さ
れる。また、ダイヤモンドの合成中、アルゴンボ
ンベ１４からアルゴンを合成石英ガラス製窓５に
吹きつけ、窓のくもり防止とした。液体の物質
は、バブラー１０に入れ、水素ボンベ１１から水
素をキヤリアガスに用い、真空槽２に導入した。 As the ultraviolet light source 9, an argon fluoride (ArF) excimer laser and a mercury lamp were used. In order to avoid absorption by the atmosphere, the ultraviolet light passes through an optical path 15 that is evacuated to less than 100 -3 Torr by a vacuum device 6, is focused by a lens 8, and is irradiated onto the substrate 1. Further, during diamond synthesis, argon was blown from the argon cylinder 14 onto the synthetic quartz glass window 5 to prevent the window from fogging up. The liquid substance was placed in a bubbler 10 and introduced into a vacuum chamber 2 using hydrogen from a hydrogen cylinder 11 as a carrier gas.
ダイヤモンドの合成プロセスを以下に示す。基
板１を基板加熱台３上に設置後、真空槽２内を真
空装置７で、光路１５内を真空装置Ａ６で10-3ト
ール以下に排気する。基板１を基板加熱台３で所
定の温度に設定後、基板移動台４で、所定の幅で
くり返し、移動させる。所定の反応物質の蒸気及
びアルゴンを水素ボンベ１１、メタンボンベ１
２、アンモニアボンベ１３、バブラー１０、アル
ゴンボンベ１４から真空槽２内に所定の分圧で導
入する。紫外光源９から紫外光を基板１に照射
し、ダイヤモンドを合成する。 The diamond synthesis process is shown below. After the substrate 1 is placed on the substrate heating table 3, the inside of the vacuum chamber 2 is evacuated to 10 -3 Torr or less by the vacuum device 7 and the inside of the optical path 15 by the vacuum device A6. After setting the substrate 1 to a predetermined temperature on the substrate heating table 3, it is repeatedly moved by a predetermined width on the substrate moving table 4. Steam of a predetermined reactant and argon are transferred to a hydrogen cylinder 11 and a methane cylinder 1.
2. Ammonia cylinder 13, bubbler 10, and argon cylinder 14 are introduced into the vacuum chamber 2 at a predetermined partial pressure. The substrate 1 is irradiated with ultraviolet light from an ultraviolet light source 9 to synthesize diamond.
基板は直径50mmのシリコン、モリブデン石英ガ
ラスを用い、基板温度は100℃〜600℃とした。紫
外光源はフツ化アルゴン（ArF）エキシマーレー
ザーを用いた。反応時間は30分とした。 The substrate used was silicon molybdenum quartz glass with a diameter of 50 mm, and the substrate temperature was 100°C to 600°C. An argon fluoride (ArF) excimer laser was used as the ultraviolet light source. The reaction time was 30 minutes.
炭素化合物はアセトンおよびベンゼンを用い、
バブラー１０から水素ガスのバブリングにより反
応容器内に導入し、増感剤はアンモニアを用い
た。 The carbon compound uses acetone and benzene,
Hydrogen gas was introduced into the reaction vessel by bubbling from the bubbler 10, and ammonia was used as the sensitizer.
アセトンおよびベンゼンは共に紫外光を吸収す
ることがわかつており、いずれの基板温度でも析
出物が認められ、100℃から200℃まではアモルフ
アス・カーボンがダイヤモンドと共に析出してい
た。200℃以上ではダイヤモンド単相となつてい
た。反応速度は300℃で３ミクロン／時間であつ
た。 It is known that both acetone and benzene absorb ultraviolet light, and precipitates were observed at any substrate temperature, and amorphous carbon precipitated together with diamond from 100°C to 200°C. At temperatures above 200℃, it became a single diamond phase. The reaction rate was 3 microns/hour at 300°C.
紫外光源として水銀ランプを用いると、ArFエ
キシマーレーザーより強度が小さいため、析出速
度は、0.03ミクロン／時間と遅い結果であつた。 When a mercury lamp was used as an ultraviolet light source, the intensity was lower than that of an ArF excimer laser, so the deposition rate was as slow as 0.03 microns/hour.
増感剤であるアンモニアを用いない場合には、
ArFエキシマーレーザーを用いてもアモルフアス
カーボンのみしか得られなかつた。 When ammonia, which is a sensitizer, is not used,
Even using an ArF excimer laser, only amorphous carbon could be obtained.
（発明の効果）
本発明により、ダイヤモンド単相の薄膜を基板
上に析出させることができる。成長速度も速く、
従来より低温で合成できる。(Effects of the Invention) According to the present invention, a diamond single-phase thin film can be deposited on a substrate. The growth rate is fast,
Can be synthesized at lower temperatures than conventional methods.
第１図は、本発明の方法に直接使用する装置の
概略図。
図において、１…基板、２…真空槽、３…基板
加熱台、４…基板移動台、５…窓、６…真空装置
Ａ、７…真空装置Ｂ、８…レンズ、９…紫外光
源、１０…バブラー、１１…水素ボンベ、１２…
メタンボンベ、１３…アンモニアボンベ、１４…
アルゴンボンベ、１５…光路。
FIG. 1 is a schematic diagram of the apparatus used directly in the method of the invention. In the figure, 1...substrate, 2...vacuum chamber, 3...substrate heating table, 4...substrate moving table, 5...window, 6...vacuum device A, 7...vacuum device B, 8...lens, 9...ultraviolet light source, 10 ...Bubbler, 11...Hydrogen cylinder, 12...
Methane cylinder, 13...Ammonia cylinder, 14...
Argon cylinder, 15...light path.
Claims (1)
増感剤の蒸気とを含む混合気体に紫外光を照射す
る工程を備えたことを特徴とするダイヤモンドの
合成法。 ２ 混合気体中には水素が混入されている特許請
求の範囲第１項記載のダイヤモンドの合成法。 ３ 炭素化合物として、アセトン及びベンゼンの
うち少なく共一種類を用いる特許請求の範囲第１
項または第２項記載のダイヤモンドの合成法。 ４ 増感剤としてアンモニアを用いる特許請求の
範囲第１項または第２項または第３項記載のダイ
ヤモンドの合成法。[Scope of Claims] 1. A method for synthesizing diamond, comprising the step of irradiating a gas mixture containing vapor of a carbon compound that is photodecomposed by ultraviolet light and vapor of a sensitizer with ultraviolet light. 2. The diamond synthesis method according to claim 1, wherein hydrogen is mixed in the gas mixture. 3 Claim 1 in which at least one of acetone and benzene is used as the carbon compound
A method for synthesizing diamond according to item 1 or 2. 4. The diamond synthesis method according to claim 1, 2, or 3, which uses ammonia as a sensitizer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61077002A JPS62235294A (en) | 1986-04-02 | 1986-04-02 | Method for synthesizing diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61077002A JPS62235294A (en) | 1986-04-02 | 1986-04-02 | Method for synthesizing diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62235294A JPS62235294A (en) | 1987-10-15 |
| JPH0481555B2 true JPH0481555B2 (en) | 1992-12-24 |
Family
ID=13621563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61077002A Granted JPS62235294A (en) | 1986-04-02 | 1986-04-02 | Method for synthesizing diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62235294A (en) |
-
1986
- 1986-04-02 JP JP61077002A patent/JPS62235294A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62235294A (en) | 1987-10-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |