JPH0481952B2 - - Google Patents
Info
- Publication number
- JPH0481952B2 JPH0481952B2 JP61155558A JP15555886A JPH0481952B2 JP H0481952 B2 JPH0481952 B2 JP H0481952B2 JP 61155558 A JP61155558 A JP 61155558A JP 15555886 A JP15555886 A JP 15555886A JP H0481952 B2 JPH0481952 B2 JP H0481952B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- recording medium
- alkyl
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910001370 Se alloy Inorganic materials 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- -1 tellurium selenium alloy Chemical class 0.000 claims description 10
- 239000001007 phthalocyanine dye Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 10
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical class [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はレーザ光によつて情報を記録再生する
ことのできる光記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light.
(従来の技術)
レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴を有してい
る。この光記録媒体材料としては、Te等のカル
コゲン元素又はこれらの化合物が使用されている
(特公昭47−26897)。とくにテルルセレン系合金
はよく使用されている(特公昭54−41902、特公
昭57−7919、特公昭57−56058)。近年、記録装置
を小型化するため、レーザ光源としては半導体レ
ーザが使用されてきている。半導体レーザは発振
波長が8000Å前後であるが、テルルセレン系合金
はこの波長帯にも比較的よく適合し、適度な反射
率と適度な吸収率が得られる(フイジカ・ステイ
タス・ソリダイ(phys.stat.sol.71891964))。(Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. As materials for this optical recording medium, chalcogen elements such as Te or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium selenium alloys are often used (Japanese Patent Publication No. 54-41902, Japanese Patent Publication No. 57-7919, Japanese Patent Publication No. 57-56058). In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption (phys.stat. sol.71891964)).
(発明が解決しようとする問題点)
しかしながら、安価な半導体レーザを使用する
ためには、これらの媒体では記録感度が充分では
なかつた。(Problems to be Solved by the Invention) However, these media do not have sufficient recording sensitivity in order to use inexpensive semiconductor lasers.
本発明の目的は、耐候性がよくかつ高感度で信
号品質の良好な光記録媒体を提供することにあ
る。 An object of the present invention is to provide an optical recording medium that has good weather resistance, high sensitivity, and good signal quality.
(問題を解決するための手段)
本発明の光記録媒体は情報をレーザ光によつて
記録しかつ読み取る光記録媒体であつて、アルキ
ル置換フタロシアニン色素の層と、テルルセレン
合金を主成分とする層との少なくとも2層を有し
ていることを特徴とする。(Means for solving the problem) The optical recording medium of the present invention is an optical recording medium in which information is recorded and read by laser light, and includes a layer of an alkyl-substituted phthalocyanine dye and a layer mainly composed of a tellurium selenium alloy. It is characterized by having at least two layers.
(作用)
光記録媒体は従来第2図のような構成になつて
いた。即ち、基板1の上に記録層21が設けられ
ている。記録用レーザ光は基板1を通して記録層
21に集光照射され、ピツト22が形成される。
基板1としてはポリカーボネイト、ポリオレフイ
ン、ポリメチルペンテン、アクリル、エポキシ樹
脂等の合成樹脂やガラスが使用される。基板に
は、ピツトが同心円状あるいはスパイラル状に一
定間隔で精度よく記録されるように案内溝が設け
られている。レーザビーム径程度の幅の溝に光が
入射すると光は回折され、ビーム中心が溝からず
れるにつれて回折光強度の空間分布が変化するの
で、これを検出してレーザビームを溝の中心に入
射させるようにサーボ系が構成されている。溝の
幅は通常0.3〜1.3μmであり、溝の深さは使用する
レーザ波長の1/12から1/4の範囲に設定される。
集光に関しても同様にサーボ系が構成されてい
る。情報の読み出しは、記録のときよりも弱いパ
ワーのレーザ光をピツト上を通過するように照射
することにより、ピツトの有無に起因する反射率
の変化を検出して行なう。記録層21としては
種々の材料を使用できるが、耐候性を考慮すると
テルルセレン合金を主成分とする膜が望ましい。
しかしながら、テルルセレン合金層のみでは出力
パワーの小さい安価な半導体レーザを記録光源と
して使用することができない。そこで、基板と記
録層との間に有機物であるグアニン層を挿入する
と高感度になるという提案がなされている(特開
昭59−232895)が、本発明者らが評価したところ
によるとこの構成では耐候性が充分であるという
結果は得られなかつた。本発明者らは種々の有機
物を検討した結果、アルキル置換フタロシアニン
色素層を第1図のように設けることにより高感度
でかつ充分な耐候性の光記録媒体が得られること
を見出し、本発明に到つたものである。(Function) Optical recording media have conventionally had a structure as shown in FIG. That is, the recording layer 21 is provided on the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed.
As the substrate 1, synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used. Guide grooves are provided on the substrate so that pits are recorded concentrically or spirally at regular intervals with high precision. When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the intensity of the diffracted light changes.This is detected and the laser beam is directed to the center of the groove. The servo system is configured as follows. The width of the groove is usually 0.3 to 1.3 μm, and the depth of the groove is set in the range of 1/12 to 1/4 of the laser wavelength used.
A servo system is similarly configured for focusing light. Information is read by irradiating a laser beam with a power weaker than that used during recording so as to pass over the pits, and detecting changes in reflectance caused by the presence or absence of pits. Various materials can be used for the recording layer 21, but in consideration of weather resistance, a film containing tellurium selenium alloy as a main component is desirable.
However, if only the tellurium selenium alloy layer is used, an inexpensive semiconductor laser with low output power cannot be used as a recording light source. Therefore, it has been proposed that high sensitivity can be achieved by inserting an organic guanine layer between the substrate and the recording layer (Japanese Patent Application Laid-Open No. 59-232895), but the present inventors have evaluated this structure. However, it was not possible to obtain sufficient weather resistance. As a result of examining various organic materials, the present inventors found that by providing an alkyl-substituted phthalocyanine dye layer as shown in Figure 1, an optical recording medium with high sensitivity and sufficient weather resistance could be obtained. It has arrived.
(実施例) 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
100℃で2時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmのポリカーボネイト樹脂デイ
スク基板を真空蒸着装置内に入れ、6×
10-6Torr以下に排気した。蒸発源として、第1
の抵抗加熱用ボートにt−ブチル置換バナジルフ
タロシアニン色素を入れ、第2の抵抗加熱用ボー
トにTeを入れ、第3の抵抗加熱用ボートにSeを
入れた。まず、フタロシアニン色素を100Å厚蒸
着し、次に水晶振動子式検出器によりそれぞれの
蒸着源からの蒸着速度比を制御して共蒸着するこ
とによりセレンが23原子数パーセントで約250Å
厚のテルルセレン合金層を形成した。この光デイ
スクを95℃の窒素雰囲気中で1時間アニールした
のち、波長8300Åにおける基板反射率を測定した
ところ32%であつた。波長8300Åの半導体レーザ
光を基板を通して入射して記録層上で1.6μm中程
度に絞り、媒体線速度5.6m/sec、記録周波数
3.77MHz、記録パルス幅70msec、記録パワー
5.5mwの条件で記録し、0.7mwで再生した。バン
ド幅30kHzのキヤリアーとノイズとの比(C/
N)は48dBと良好であつた。この光デイスクを
70℃80%の高温高湿度の環境に60時間保存した
後、上記特性を調べた変化はなく、耐候性に優れ
た光記録媒体であることが確認された。 A polycarbonate resin disk substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm, which has been annealed at 100℃ for 2 hours, is placed in a vacuum evaporation apparatus and 6×
Exhaust to below 10 -6 Torr. As an evaporation source, the first
A t-butyl-substituted vanadyl phthalocyanine dye was placed in a resistance heating boat, Te was placed in a second resistance heating boat, and Se was placed in a third resistance heating boat. First, a phthalocyanine dye is deposited to a thickness of 100 Å, and then co-deposited by controlling the deposition rate ratio from each deposition source using a quartz crystal detector, selenium is deposited to a thickness of about 250 Å at 23 atomic percent.
A thick tellurium selenium alloy layer was formed. After annealing this optical disk in a nitrogen atmosphere at 95° C. for 1 hour, the reflectance of the substrate at a wavelength of 8300 Å was measured and found to be 32%. Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused to a medium diameter of 1.6 μm on the recording layer, with a medium linear velocity of 5.6 m/sec and a recording frequency.
3.77MHz, recording pulse width 70msec, recording power
Recorded under 5.5mw conditions and played back at 0.7mw. Carrier to noise ratio (C/
N) was good at 48 dB. This optical disk
After storage for 60 hours in a high temperature and high humidity environment of 70°C and 80%, there were no changes in the above characteristics, confirming that the optical recording medium has excellent weather resistance.
比較のためのアルキル置換をしていないバナジ
ルフタロシアニン色素を用いたデイスクは、上記
高温高湿条件に長時間保存しておくと光学特性が
変化して問題であつた。これは無置換バナジルフ
タロシアニンが結晶化し、波長8300Åにおける消
衰係数が大きくなるためである。例えば、ガラス
基板上にt−ブチル置換バナジルフタロシアニン
を形成したものと、無置換バナジルフタロシアニ
ンを形成したものとを作製し、300℃1時間のア
ニールを行なうと、無置換の試料は結晶化が進行
して表面荒れをおこすがアルキル置換の試料は表
面荒れを生じない。即ち、アルキル置換のフタロ
シアニンは、その立体傷害性のために結晶化しに
くく耐候性に優れるものである。 For comparison, a disc using a vanadyl phthalocyanine dye without alkyl substitution had a problem in that its optical properties changed when stored for a long time under the above-mentioned high temperature and high humidity conditions. This is because unsubstituted vanadyl phthalocyanine crystallizes and its extinction coefficient at a wavelength of 8300 Å becomes large. For example, if you prepare t-butyl-substituted vanadyl phthalocyanine and unsubstituted vanadyl phthalocyanine on a glass substrate, and annealing them at 300°C for 1 hour, the unsubstituted sample will undergo crystallization. However, alkyl-substituted samples do not cause surface roughness. That is, alkyl-substituted phthalocyanine is difficult to crystallize due to its steric hindrance and has excellent weather resistance.
なお、t−ブチル置換バナジルフタロシアニン
膜は波長8300Åにおいて吸収があり、記録ピツト
はテルルセレン合金層の孔とフタロシアニン層の
凹部とにより形成されている。 The t-butyl-substituted vanadyl phthalocyanine film has absorption at a wavelength of 8300 Å, and the recording pits are formed by holes in the tellurium selenium alloy layer and recesses in the phthalocyanine layer.
アルキル置換フタロシアニン色素層の厚さは5
Åから1000Åの範囲が望ましく、テルルセレン合
金層の厚さは100Åから1000Åの範囲が記録特性
の点で望ましい。セレンの含有量は原子数パーセ
ントで2から50の範囲が耐候性の点で望ましい。 The thickness of the alkyl-substituted phthalocyanine dye layer is 5
The thickness of the tellurium selenium alloy layer is preferably in the range of 100 Å to 1000 Å from the viewpoint of recording characteristics. The content of selenium is desirably in the range of 2 to 50 atomic percent from the viewpoint of weather resistance.
テルルセレン合金層には、鉛、ヒ素、スズ、ゲ
ルマニウム、カドミウム、タリウム、アンチモ
ン、イオウ、リン、インジウム、ガリウム、亜
鉛、ビスマス、アルミニウム、銅、銀、マグネシ
ウム、タンタル、金、パラジウムの群から選ばれ
た少なくとも1種の元素を添加すると、ピツトの
形状を良好に整える場合がある。ただし添加量は
原子数パーセントで25パーセント以下が望まし
い。 The tellurium selenium alloy layer contains a material selected from the group of lead, arsenic, tin, germanium, cadmium, thallium, antimony, sulfur, phosphorus, indium, gallium, zinc, bismuth, aluminum, copper, silver, magnesium, tantalum, gold, and palladium. Addition of at least one element may improve the shape of the pit. However, the amount added is preferably 25% or less in terms of atomic percent.
アルキル置換フタロシアニン層、テルルセレン
合金層の成膜方法は本実施例の他にスパツタリン
グ法、イオンプレーテイング法、イオンビームデ
ポジシヨン法でもよい。 The alkyl-substituted phthalocyanine layer and the tellurium selenium alloy layer may be formed by sputtering, ion plating, or ion beam deposition in addition to this embodiment.
(発明の効果)
上記実施例から明らかなように、本発明により
耐候性がよくかつ高感度で信号品質の良好な光記
録媒体が得られる。(Effects of the Invention) As is clear from the above examples, the present invention provides an optical recording medium with good weather resistance, high sensitivity, and good signal quality.
第1図は本発明の光記録媒体の例を示す断面概
略図、第2図は従来の光記録媒体の断面概略図で
ある。
図において、1は基板、2はアルキル置換フタ
ロシアニン層、3はテルルセレン合金層、21は
記録層、22はピツトを表わす。
FIG. 1 is a schematic cross-sectional view showing an example of the optical recording medium of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional optical recording medium. In the figure, 1 is a substrate, 2 is an alkyl-substituted phthalocyanine layer, 3 is a tellurium selenium alloy layer, 21 is a recording layer, and 22 is a pit.
Claims (1)
光記録媒体において、アルキル置換フタロシアニ
ン色素の層と、テルルセレン合金を主成分とする
層との少なくとも2層を有していることを特徴と
する光記録媒体。1. An optical recording medium in which information is recorded and read by laser light, characterized by having at least two layers: a layer of an alkyl-substituted phthalocyanine dye and a layer mainly composed of a tellurium selenium alloy. Medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155558A JPS639575A (en) | 1986-07-01 | 1986-07-01 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155558A JPS639575A (en) | 1986-07-01 | 1986-07-01 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS639575A JPS639575A (en) | 1988-01-16 |
| JPH0481952B2 true JPH0481952B2 (en) | 1992-12-25 |
Family
ID=15608681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61155558A Granted JPS639575A (en) | 1986-07-01 | 1986-07-01 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS639575A (en) |
-
1986
- 1986-07-01 JP JP61155558A patent/JPS639575A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639575A (en) | 1988-01-16 |
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