JPH0530390B2 - - Google Patents
Info
- Publication number
- JPH0530390B2 JPH0530390B2 JP61122686A JP12268686A JPH0530390B2 JP H0530390 B2 JPH0530390 B2 JP H0530390B2 JP 61122686 A JP61122686 A JP 61122686A JP 12268686 A JP12268686 A JP 12268686A JP H0530390 B2 JPH0530390 B2 JP H0530390B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- layer
- recording medium
- optical recording
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 19
- 229910052714 tellurium Inorganic materials 0.000 claims description 15
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- LEQRFHXXXRSFLO-UHFFFAOYSA-N [N].[Se] Chemical compound [N].[Se] LEQRFHXXXRSFLO-UHFFFAOYSA-N 0.000 description 6
- 229910001370 Se alloy Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- -1 polymethylpentyl Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 206010003497 Asphyxia Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00451—Recording involving ablation of the recording layer
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体レーザ光によつて情報を記録再
生することのできる光記録媒体に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium on which information can be recorded and reproduced using semiconductor laser light.
（従来の技術）
レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴を有してい
る。この光記録媒体材料としては、Te等のカル
コゲン元素、又はこれらの化合物が使用されてい
る（特公昭47−26897）。とくにテルルセレン系合
金はよく使用されている（特公昭54−41902、特
公昭57−7919、特公昭57−56058）。(Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. As materials for this optical recording medium, chalcogen elements such as Te or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium selenium alloys are often used (Japanese Patent Publication No. 54-41902, Japanese Patent Publication No. 57-7919, Japanese Patent Publication No. 57-56058).
近年、記録装置を小型化するため、レーザ光源
としては半導体レーザが使用されてきている。半
導体レーザは発振波長が8000Å前後であるが、テ
ルルセレン系合金はこの波長帯にも比較的よく通
合し、適度な反射率と適度な吸収率が得られる
（フイジカ・ステイタス・ソリダイ（phys・
stat・sol・７、189、1964））。 In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, but tellurium selenium alloys are relatively compatible with this wavelength band and can provide moderate reflectance and moderate absorption (physica status solidi).
stat・sol・7, 189, 1964)).
（発明が解決しようとする問題点）
しかしながら、これらの媒体で信号品質が充分
に良好でかつ半導体レーザ記録に適するものはな
かつた。(Problems to be Solved by the Invention) However, none of these media has sufficiently good signal quality and is suitable for semiconductor laser recording.
本発明の目的は、耐候性がよく、かつ信号品質
が充分に良好で記録パワー余裕度が大きい半導体
レーザ記録に適した光記録媒体を提供することに
ある。 An object of the present invention is to provide an optical recording medium suitable for semiconductor laser recording that has good weather resistance, sufficiently good signal quality, and a large recording power margin.
（問題を解決するための手段）
本発明の光記録媒体は情報を半導体レーザ光に
よつて記録しかつ読み取る光記録媒体であつて、
シリコン酸化物又はセリウム酸化物又はマグネシ
ウム酸化物又は錫酸化物の層と、テルルとセレン
と窒素を主成分とする層との少なくとも２層を有
していることを特徴とする。(Means for solving the problem) The optical recording medium of the present invention is an optical recording medium in which information is recorded and read by semiconductor laser light, and includes:
It is characterized by having at least two layers: a layer of silicon oxide, cerium oxide, magnesium oxide, or tin oxide, and a layer containing tellurium, selenium, and nitrogen as main components.
（作用）
光記録媒体は従来は第２図のような構成になつ
ていた。即ち、基板１の上に記録層２１が設けら
れている。記録用レーザ光は基板１を通して記録
層２１に集光照射され、ピツト２２が形成され
る。基板１としてはポリカーポネイト、ポリオレ
フイン、ポリメチルペンテル、アクリル、エポキ
シ樹脂等の合成樹脂が使用される。基板には、ピ
ツトが同心円状あるいはスパイラル状に一定間隔
で精度よく記録されるように案内溝が設けられて
いるレーザビーム径程度の幅の溝に光が入射する
と光は回折され、ビーム中心が溝からずれるにつ
れて回折光強度の空間分布が変化するので、これ
を検出してレーザビームを溝の中心に入射させる
ようにサーボ系が構成されている。溝の幅は通常
0.3〜1.3μｍであり、溝の深さは使用するレーザ
波長の1/12から1/4の範囲に設定される。集光に
関しても同様にサーボ系が構成されている。情報
の読み出しは、記録のときより弱いパワーのレー
ザ光をピツト上を通過するように照射することに
より、ピツトの有無に起因する反射率の変化を検
出して行なう。(Function) Conventionally, an optical recording medium has a structure as shown in FIG. That is, the recording layer 21 is provided on the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. As the substrate 1, synthetic resins such as polycarbonate, polyolefin, polymethylpentyl, acrylic, and epoxy resins are used. The substrate is provided with guide grooves so that the pits are accurately recorded at regular intervals in a concentric or spiral pattern.When light enters a groove with a width about the diameter of a laser beam, the light is diffracted and the center of the beam is Since the spatial distribution of the diffracted light intensity changes as it deviates from the groove, a servo system is configured to detect this and direct the laser beam to the center of the groove. The width of the groove is usually
The depth of the groove is 0.3 to 1.3 μm, and the depth of the groove is set in the range of 1/12 to 1/4 of the wavelength of the laser used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a weaker power than during recording so as to pass over the pits, and detecting changes in reflectance caused by the presence or absence of pits.
記録層２１としては種々の材料を使用できる
が、耐候性を考慮するとテルルセレン系合金膜が
望ましい。しかしながら、テルルセレン合金層の
みでは信号品質が充分に良好ではなかつた。本発
明者らは記録層をテルルとセレンと窒素を主成分
とすることにより、信号品質が良好で半導体レー
ザ記録に適した媒体となることを見出し、すでに
提案している。本発明はこれをさらに改善したも
のであり、第１図に示すように基板１とテルルセ
レン窒素層３の間に金属酸化物層２を設けること
により、記録により形成されるピツトが大きく拡
がらないようになる。したがつて、ピツトをつめ
て記録できるので高密度記録が可能となる。又、
記録パワー変動に対する余裕度も大きくなるの
で、実用的な光記録媒体となる。さらに又、大き
なピツトが形成されないためトラツキングやフオ
ーカスサーボが不安定にならないので実用的な光
記録媒体となる。ピツトが大きく拡がらない理由
は明確ではないが、テルルセレン窒素層の有無に
よる表面エネルギーの差が金属酸化物層の形成に
より変化することによつていると考えられる。 Although various materials can be used for the recording layer 21, a tellurium selenium alloy film is preferable in consideration of weather resistance. However, the signal quality was not sufficiently good with only the tellurium selenium alloy layer. The inventors of the present invention have found that by making the recording layer mainly composed of tellurium, selenium, and nitrogen, a medium with good signal quality and suitable for semiconductor laser recording can be obtained, and has already proposed this method. The present invention further improves this, and by providing a metal oxide layer 2 between the substrate 1 and the tellurium selenium nitrogen layer 3 as shown in FIG. 1, the pits formed by recording do not spread significantly. It becomes like this. Therefore, since recording can be performed by filling the pits, high-density recording is possible. or,
Since the margin for fluctuations in recording power is also increased, the optical recording medium becomes a practical optical recording medium. Furthermore, since no large pits are formed, tracking and focus servo do not become unstable, making it a practical optical recording medium. The reason why the pits do not expand significantly is not clear, but it is thought to be due to the difference in surface energy depending on the presence or absence of the tellurium selenium nitrogen layer that changes due to the formation of the metal oxide layer.
（実施例） 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
100℃で２時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmのポリカーボネイト樹脂デイ
スク基板にSiO2を500Å厚形成し、ひきつづきこ
の上に、テルルセレン合金ターゲツトをアルゴン
と窒素の混合ガスでマグネトロンスパツタして、
テルルとセレンと窒息の比が原子パーセントで90
対４対６のテルルセレン窒素層を240Å厚形成し
た。この光デイスクを95℃の窒素雰囲気中で１時
間アニールしたのち、波長8300Åにおける基板入
射反射率を測定したところ34％であつた。波長
8300Åの半導体レーザ光を基板を通して入射して
記録層上で1.6μｍφ程度に絞り、媒体線速度5.6
ｍ／sec、記録周波数3.77MHz、記録パルス幅
70nsec、記録パワー7.0ｍＷの条件で記録し、0.7
ｍＷで再生した。バンド幅ＫHzのキヤリアーとノ
イズとの比（Ｃ／Ｎ）は52dBと良好であつた。
この光デイスクを70℃80％の高温高湿度の環境に
60分間保存した後、上記特性を調べたが変化はな
く、耐候性に優れた光記録媒体であることが確認
された。 SiO 2 was formed to a thickness of 500 Å on a polycarbonate resin disk substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm that had been annealed at 100°C for 2 hours.Subsequently, a tellurium selenium alloy target was placed on top of this using a magnetron with a mixed gas of argon and nitrogen. Splashing,
The ratio of tellurium to selenium to suffocation is 90 in atomic percent.
A tellurium selenium nitrogen layer having a ratio of 4 to 6 was formed to a thickness of 240 Å. After annealing this optical disk in a nitrogen atmosphere at 95° C. for 1 hour, the substrate incident reflectance at a wavelength of 8300 Å was measured and found to be 34%. wavelength
Semiconductor laser light of 8300 Å is incident through the substrate and focused to about 1.6 μmφ on the recording layer, and the linear velocity of the medium is 5.6.
m/sec, recording frequency 3.77MHz, recording pulse width
Recorded under the conditions of 70nsec and recording power 7.0mW, 0.7
Regeneration was performed at mW. The carrier-to-noise ratio (C/N) with a bandwidth of KHz was as good as 52 dB.
This optical disk is placed in a high temperature and high humidity environment of 70℃ and 80%.
After storage for 60 minutes, the above characteristics were examined, but there were no changes, confirming that the optical recording medium had excellent weather resistance.
比較のためのSiO2層を設けない光デイスクに
比べて、45dB以上のＣ／Ｎが得られる記憶パワ
ー範囲はおそよ３倍大きくなり、記憶パワー変動
に対する余裕度の大きいことが確認された。又、
トラツキングやフオーカスのサーボも不安定にな
ることはなかつた。 Compared to a comparison optical disk without a SiO 2 layer, the storage power range in which a C/N of 45 dB or more can be obtained is approximately three times larger, confirming that there is a large margin against storage power fluctuations. or,
The tracking and focusing servos did not become unstable.
金属酸化物としては種々の酸化物を使用するこ
とができるが、その中ではCeO2、MgO、SiO、
SiO2、SnO2がとくに望ましい。膜の内部応力は
小さくするか又はやや圧縮応力となるように作製
することが、膜のクラツクを防止する点で望まし
い。金属酸化物層の膜厚は、５Åから2500Åの範
囲が望ましい。金属酸化物層の屈折率が基板の屈
折率もより小さい場合には膜中波長の1/4の厚さ
に設定することにより媒体反射率を極大にするこ
とができる。金属酸化物層の屈折率が基板の屈折
率よりも大きい場合には膜中波長の1/2の厚さに
設定することにより、媒体反射率が小さくなるこ
とを防ぐことができる。逆に、膜中波長の1/4或
いは3/4の厚さに設定すれば、媒体反射率は小さ
くなるが記録膜での吸収は最大となるので高感度
化することができる。 Various oxides can be used as the metal oxide, among which CeO 2 , MgO, SiO,
SiO 2 and SnO 2 are particularly desirable. In order to prevent cracks in the film, it is desirable to manufacture the film so that the internal stress is small or slightly compressive stress. The thickness of the metal oxide layer is preferably in the range of 5 Å to 2500 Å. When the refractive index of the metal oxide layer is smaller than that of the substrate, the medium reflectance can be maximized by setting the thickness to 1/4 of the wavelength in the film. When the refractive index of the metal oxide layer is larger than that of the substrate, the medium reflectance can be prevented from becoming small by setting the thickness to 1/2 of the wavelength in the film. On the other hand, if the thickness is set to 1/4 or 3/4 of the wavelength in the film, the medium reflectance will be small, but the absorption in the recording film will be maximized, so high sensitivity can be achieved.
テルルセレン窒素層の厚さは180Åから400Åの
範囲が記録再生特性の観点から望ましく、窒素の
含有量は原子パーセントで２パーセント以上10パ
ーセント以下が記録再生特性、耐候性の観点から
望ましく、セレンの含有量は原子パーセントで２
パーセント以上30パーセント以下、とくに10パー
セント以上30パーセント以下の範囲が耐候性の観
点で望ましい。 The thickness of the tellurium selenium nitrogen layer is preferably in the range of 180 Å to 400 Å from the viewpoint of recording/reproducing characteristics, and the nitrogen content is preferably 2% or more and 10% or less in atomic percent from the viewpoint of recording/reproducing characteristics and weather resistance. The amount is atomic percent 2
A range of 10% to 30%, particularly 10% to 30%, is desirable from the viewpoint of weather resistance.
テルルセレン窒素層には、鉛、ヒ素、スズ、ゲ
ルマニウム、カドミウム、タリウム、リン、イン
ジウム、ガリウム、亜鉛、アルミニウム、銅、
銀、マグネシウム、タンタル、金、バラジウム、
コバルトの群から選ばれた少なくとも１種の元素
を添加すると、ピツトの形成を良好に整える場合
がある。ただし添加量は原子パーセントで20パー
セント未満が望ましい。 The tellurium selenium nitrogen layer contains lead, arsenic, tin, germanium, cadmium, thallium, phosphorus, indium, gallium, zinc, aluminum, copper,
silver, magnesium, tantalum, gold, palladium,
Addition of at least one element selected from the group of cobalt may improve the formation of pits. However, the amount added is preferably less than 20% in atomic percent.
成膜方法は、スパツタリング法の他に、蒸着
法、反応性蒸着法、イオンプレーテイング法、イ
オンビームデポジシヨン法等でもよい。 In addition to the sputtering method, the film forming method may be a vapor deposition method, a reactive vapor deposition method, an ion plating method, an ion beam deposition method, or the like.
（発明の効果）
上記実施例から明らかなように、本発明により
耐候性がよくかつ信号品質が充分に良好で記録パ
ワー余裕度が大きく半導体レーザ記録に適した光
記録媒体が得られる。(Effects of the Invention) As is clear from the above embodiments, the present invention provides an optical recording medium that has good weather resistance, sufficiently good signal quality, a large recording power margin, and is suitable for semiconductor laser recording.
第１図は本発明の光記録媒体の一例を示す断面
概略図、第２図は従来の光記録媒体の断面概略図
である。
図において、１は基板、２は金属酸化物層、３
はテルルセレン窒素を主成分とする層、２１は記
録層、２２はピツトを表わす。
FIG. 1 is a schematic cross-sectional view showing an example of the optical recording medium of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional optical recording medium. In the figure, 1 is a substrate, 2 is a metal oxide layer, and 3 is a metal oxide layer.
21 represents a layer containing tellurium selenium nitrogen as a main component, 21 represents a recording layer, and 22 represents a pit.
Claims (1)
み取る光記録媒体において、シリコン酸化物又は
セリウム酸化物又はマグネシウム酸化物又は錫酸
化物の層と、テルルとセレンと窒素を主成分とす
る層との少なくとも２層を有していることを特徴
とする光記録媒体。1. In an optical recording medium in which information is recorded and read by semiconductor laser light, a layer of silicon oxide, cerium oxide, magnesium oxide, or tin oxide and a layer mainly composed of tellurium, selenium, and nitrogen are used. An optical recording medium characterized by having at least two layers.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122686A JPS62278094A (en) | 1986-05-27 | 1986-05-27 | Optical recording medium |
| US07/043,626 US4839208A (en) | 1986-04-30 | 1987-04-28 | Optical information recording medium |
| EP87106262A EP0243958B1 (en) | 1986-04-30 | 1987-04-29 | Optical information recording medium |
| DE8787106262T DE3781926T2 (en) | 1986-04-30 | 1987-04-29 | MEDIUM FOR OPTICAL INFORMATION RECORDING. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61122686A JPS62278094A (en) | 1986-05-27 | 1986-05-27 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278094A JPS62278094A (en) | 1987-12-02 |
| JPH0530390B2 true JPH0530390B2 (en) | 1993-05-07 |
Family
ID=14842112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61122686A Granted JPS62278094A (en) | 1986-04-30 | 1986-05-27 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62278094A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005018947A1 (en) * | 2003-08-21 | 2005-03-03 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
-
1986
- 1986-05-27 JP JP61122686A patent/JPS62278094A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62278094A (en) | 1987-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6363153A (en) | Production of optical recording medium | |
| JPS63151486A (en) | Optical recording medium and its production | |
| JP2689429B2 (en) | Optical recording medium | |
| JP2508056B2 (en) | Optical recording medium manufacturing method | |
| JPS6313786A (en) | Optical recording medium | |
| JPH0533675B2 (en) | ||
| JPS62278094A (en) | Optical recording medium | |
| JPH0530391B2 (en) | ||
| JPH0528675B2 (en) | ||
| JPH0553018B2 (en) | ||
| JP2560711B2 (en) | Optical recording medium | |
| JP2581086B2 (en) | Optical recording medium | |
| JPH051747B2 (en) | ||
| JP2581087B2 (en) | Optical recording medium | |
| JPH0581976B2 (en) | ||
| JPH0481953B2 (en) | ||
| JPS6363152A (en) | Production of optical recording medium | |
| JPS6331039A (en) | Optical recording medium | |
| JP2508055B2 (en) | Optical recording medium manufacturing method | |
| JPS6314336A (en) | Optical recording medium | |
| JP2508053B2 (en) | Optical recording medium manufacturing method | |
| JP2508188B2 (en) | Optical recording medium manufacturing method | |
| JPS62297182A (en) | Optical recording medium | |
| JPH0481958B2 (en) | ||
| JPH0481954B2 (en) |