JPH0482401A - Dielectric filter - Google Patents
Dielectric filterInfo
- Publication number
- JPH0482401A JPH0482401A JP19675690A JP19675690A JPH0482401A JP H0482401 A JPH0482401 A JP H0482401A JP 19675690 A JP19675690 A JP 19675690A JP 19675690 A JP19675690 A JP 19675690A JP H0482401 A JPH0482401 A JP H0482401A
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- dielectric block
- shield member
- dielectric
- conductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 5
- 229910000640 Fe alloy Inorganic materials 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、例えば自動車電話、パーソナル無線、コード
レス電話等の通信機器等に使用するための誘電体フィル
タに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric filter for use in communication equipment such as, for example, car telephones, personal radios, and cordless telephones.
［従来の技術］
通信機器等に使用するための１／４波長の分布定数型誘
電体フィルタは例えば特開平１−２７７００１号（特願
昭６３−１０８０７０号）公報に開示されている。また
、ここには入力結合コンデンサと出力結合コンデンサと
シールド部材とを絶縁性合成樹脂で一体化した組立体を
用意し、この組立体を誘電体ブロックに装着することが
開示されている。この誘電体フィルタにおけるシールド
部材は誘電体ブロックの側面に半田結合されている。[Prior Art] A 1/4 wavelength distributed constant dielectric filter for use in communication equipment and the like is disclosed in, for example, Japanese Patent Application Laid-Open No. 1-277001 (Japanese Patent Application No. 108070-1983). Further, this document discloses preparing an assembly in which an input coupling capacitor, an output coupling capacitor, and a shielding member are integrated with an insulating synthetic resin, and mounting this assembly on a dielectric block. The shield member in this dielectric filter is soldered to the side surface of the dielectric block.
［発明が解決しようとする課題］
ところで、従来のシールド部材は、厚さ０．２１程度の
リン青銅板の表面上に銅メツキ層と半田メツキ層とを設
けたものから成る。しかし、リン青銅の熱膨張係数は１
７． ６ Ｘ １０−６／”Ｃとセラミック誘電体ブロ
ックの熱膨張係数５．０ＸＩＯ−６／℃に対して３．５
倍も大きいので、急熱、急冷などのヒートショックが加
わると、半田付箇所の外導体膜の剥離や誘電体ブロック
の欠けなどが発生し、誘電体フィルタの特性が劣化した
。[Problems to be Solved by the Invention] By the way, a conventional shield member is made of a phosphor bronze plate having a thickness of about 0.21 mm, with a copper plating layer and a solder plating layer provided on the surface. However, the coefficient of thermal expansion of phosphor bronze is 1
7. 6 X 10-6/”C and 3.5 for the thermal expansion coefficient of ceramic dielectric block 5.0XIO-6/℃
Since it is twice as large, heat shocks such as rapid heating and cooling can cause peeling of the outer conductor film at soldered points and chipping of the dielectric block, degrading the properties of the dielectric filter.
そこで、本発明の目的はヒートショックに対する信頼性
の高い誘電体フィルタを提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a dielectric filter that is highly reliable against heat shock.
［課題を解決するための手段］
上記目的を達成するための本発明は、誘電体ブロックの
外周面に設けられた外導体膜に対してシールド部材が半
田結合されている構成の誘電体フィルタにおいて、前記
誘電体ブロックの熱膨張率をβ１、前記シールド部材の
熱膨張率をβ２とした場合に、β２／β１を０．５〜１
．５の範囲にすることが可能な熱膨張率を有する材料に
よって前記シールド部材が形成されていることを特徴と
する誘電体フィルタに係わるものである。[Means for Solving the Problems] To achieve the above object, the present invention provides a dielectric filter having a configuration in which a shield member is soldered to an outer conductor film provided on the outer peripheral surface of a dielectric block. , where the coefficient of thermal expansion of the dielectric block is β1 and the coefficient of thermal expansion of the shield member is β2, β2/β1 is 0.5 to 1.
．． The present invention relates to a dielectric filter characterized in that the shield member is formed of a material having a coefficient of thermal expansion that can be set in a range of 5.5.
［作 用］
本発明に係わるシールド部材は誘電体ブロックとほぼ等
しい熱膨張係数（線膨張係数）を有するので、誘電体フ
ィルタにヒートショックが加わっても、シールド部材と
誘電体ブロックとの間に大きなストレスが発生しない。[Function] Since the shield member according to the present invention has a coefficient of thermal expansion (linear expansion coefficient) that is almost equal to that of the dielectric block, even if a heat shock is applied to the dielectric filter, there will be no damage between the shield member and the dielectric block. No major stress occurs.
従って、外導体膜の剥離や誘電体ブロックの欠けを防ぐ
ことができる。Therefore, peeling of the outer conductor film and chipping of the dielectric block can be prevented.
［実施例］
次に、第１図〜第６図を参照して本発明の実施例に係わ
る１／４波長分布定数型誘電体フィルタを説明する。[Example] Next, a 1/4 wavelength distributed constant type dielectric filter according to an example of the present invention will be described with reference to FIGS. 1 to 6.
この誘電体フィルタは、チタン酸バリウム系磁器の高周
波用誘電体材料から成る角柱状誘電体ブロック１を備え
ている。誘電体ブロック１には、この一方の端面２から
他方の端面３に至る２個の共振孔４ ａ ｓ ４ ｂと
１個の結合孔５とが設けられている。各共振孔４ａ、４
ｂの壁面には内導体膜６がそれぞれ設けられ、一対の端
面２．３間の外周面７即ち４個面には外導体膜８が設け
られ、他方の端面３にはそれぞれの内導体膜６と外導体
膜８とをそれぞれ接続するように端面導体膜９が設けら
れている。内導体膜６、外導体膜８及び端面導体膜９は
銀ペーストを塗布して焼付けたものである。This dielectric filter includes a prismatic dielectric block 1 made of barium titanate ceramic high frequency dielectric material. The dielectric block 1 is provided with two resonance holes 4 a s 4 b and one coupling hole 5 extending from one end surface 2 to the other end surface 3 . Each resonance hole 4a, 4
An inner conductor film 6 is provided on each wall surface of b, an outer conductor film 8 is provided on the outer circumferential surface 7 between the pair of end surfaces 2 and 3, that is, four surfaces, and each inner conductor film is provided on the other end surface 3. An end face conductor film 9 is provided to connect the outer conductor film 8 and the end face conductor film 6, respectively. The inner conductor film 6, the outer conductor film 8, and the end face conductor film 9 are formed by applying silver paste and baking it.
誘電体ブロック１の２つの共振孔４ａ、４ｂに結合コン
デンサ１０がそれぞれ挿入されている。Coupling capacitors 10 are inserted into two resonance holes 4a and 4b of dielectric block 1, respectively.
２つの結合コンデンサ１０は、筒状のコンデンサ用磁器
誘電体に一対の電極を設けた磁器コンデンサから成る。The two coupling capacitors 10 are composed of ceramic capacitors in which a pair of electrodes is provided on a cylindrical ceramic dielectric material for capacitors.
各結合コンデンサ１０の一方のり−ド１１は誘電体フィ
ルタの入出力端子として使用され、他方のリード１２は
接続部材１３を介して内導体膜６にそれぞれ接続されて
いる。なお、第４図では結合コンデンサ１０が概略的に
示されて′いる。One lead 11 of each coupling capacitor 10 is used as an input/output terminal of a dielectric filter, and the other lead 12 is connected to the inner conductor film 6 via a connecting member 13, respectively. Incidentally, in FIG. 4, the coupling capacitor 10 is schematically shown.
２つの結合コンデンサ１０とシールド部材１４とは合成
樹脂から成るモールド絶縁体１５によって一体化されて
いる。第３図は２つの結合コンデンサ１０とシールド部
材１４とを一体化した組立体１６を示す。モールド絶縁
体１５は共振孔４ａ、４ｂに対する径方向の位置決めを
達成するための突出部１７と、共振孔４ ａ ｓ ４
ｂに対する結合コンデンサ１０の深さ方向の位置決めを
達成するための鍔部１８とを有する。The two coupling capacitors 10 and the shield member 14 are integrated by a molded insulator 15 made of synthetic resin. FIG. 3 shows an assembly 16 in which two coupling capacitors 10 and a shield member 14 are integrated. The mold insulator 15 has protrusions 17 for achieving radial positioning with respect to the resonance holes 4a and 4b, and the resonance holes 4a, 4b.
b has a flange portion 18 for achieving positioning of the coupling capacitor 10 in the depth direction with respect to b.
シールド部材１４は、結合孔５の上方を覆う上面部１９
と誘電体ブロック１の長手の対の側面の外導体膜８に接
続するための一対の側面部２０．２１と、外部回路基板
（図示せず）に対する取付は及びグランドに対する接続
に利用するための複数の突出部２２とから成り、全体と
してコ字状に形成されている。The shield member 14 has an upper surface portion 19 that covers the upper side of the coupling hole 5.
and a pair of side surfaces 20 and 21 for connection to the outer conductor film 8 on the longitudinal pairs of sides of the dielectric block 1, and a pair of side surfaces 20 and 21 for connection to an external circuit board (not shown) and for connection to the ground. It consists of a plurality of protrusions 22, and is formed in a U-shape as a whole.
このシールド部材１４を形成する際には、厚さ０．２ａ
＋ｍのニッケル・鉄合金（４２Ｎ ｉ−Ｆ ｅ）板を用
意し、このニッケル・鉄合金板に鋼上メツキ（銅フラッ
シュメツキ）層を形成した後に半田（Ｓｎ ： Ｐｂ−
９： １）メツキ層を７〜１０μｍの厚さに形成し、こ
れを所定パターンに切断し、折り曲げる。このシールド
部材１４の熱膨張係数（線膨張係数）は２０℃〜３００
℃の範囲において４．０〜４．７ｘｌＯ−６／’Ｃであ
り、セラミック誘電体ブロック１のそれ（５，０ｘｌＯ
−６／’Ｃ）とほぼ等しい。なお、誘電体ブロック１の
熱張脹係数をβ１１シールド部材１４のそれをβ２とし
た場合に、β２／β■は０．８〜０．９４である。When forming this shield member 14, the thickness is 0.2a.
A nickel-iron alloy (42N i-Fe) plate of +m is prepared, and after forming a steel plating (copper flash plating) layer on this nickel-iron alloy plate, solder (Sn:Pb-
9: 1) Form a plating layer to a thickness of 7 to 10 μm, cut it into a predetermined pattern, and bend it. The thermal expansion coefficient (linear expansion coefficient) of this shield member 14 is 20°C to 300°C.
4.0 to 4.7xlO-6/'C, and that of ceramic dielectric block 1 (5,0xlO
-6/'C). Note that when the thermal expansion coefficient of the dielectric block 1 is β11 and that of the shield member 14 is β2, β2/β2 is 0.8 to 0.94.
シールド部材１４として適当な材料はβ２／βｌが０．
５〜１゜５の範囲のものであり、より好ましくは０．８
〜１．２の範囲のものである。A suitable material for the shield member 14 has β2/βl of 0.
It is in the range of 5 to 1°5, more preferably 0.8
~1.2.
組立体１６を誘電体ブロック１に一体化する時には、シ
ールド部材１４の一対の側面部２ｏ１２１を外導体膜８
Ｊこ半田（図示せず）で固着する。When integrating the assembly 16 into the dielectric block 1, the pair of side surfaces 2o121 of the shield member 14 are connected to the outer conductor film 8.
Secure with J solder (not shown).
完成した誘電体フィルタを外部回路基板に取付ける時に
は、結合コンデンサ１０のリード１１及びシールド部材
１４の突出部２２を外部回路基板の貫通孔に挿入し、信
号伝送ライン及びアースラインに接続する。When attaching the completed dielectric filter to an external circuit board, the leads 11 of the coupling capacitor 10 and the protrusion 22 of the shield member 14 are inserted into the through holes of the external circuit board and connected to the signal transmission line and the ground line.
第５図は第１図〜第４図の誘電体フィルタの等価回路を
示す。２つの共振孔４ａ、４ｂに基づく２つの共振回路
は、Ｌｌ、ＣＩ、Ｌ２、Ｃ２て示されている。これ等の
共振回路は、各共振孔４ａ、４ｂの内導体膜６と外導体
膜８と端面導体膜つとに基づいて形成される。２つの共
振回路は誘導性インピーダンスＺ１によって結合されて
いる。２つの結合コンデンサ１０はＣａ５Ｃｂで示され
ている。FIG. 5 shows an equivalent circuit of the dielectric filter shown in FIGS. 1-4. The two resonant circuits based on the two resonant holes 4a, 4b are designated Ll, CI, L2, C2. These resonant circuits are formed based on the inner conductor film 6, outer conductor film 8, and end face conductor film of each resonance hole 4a, 4b. The two resonant circuits are coupled by an inductive impedance Z1. Two coupling capacitors 10 are designated Ca5Cb.
完成した誘電体フィルタに対して一４０〜＋１２５℃の
ヒートサイクルを２００回加える試験を行ったところ、
外導体膜８の剥離や誘電体ブロック１の欠けによる特性
劣化が発生しなかった。また、この誘電体フィルタの電
気的特性即ち減衰特性は従来誘電体フィルタのそれとほ
とんど同一であった。When we conducted a test on the completed dielectric filter by subjecting it to 200 heat cycles at -40 to +125 degrees Celsius, we found that
No deterioration of characteristics due to peeling of the outer conductor film 8 or chipping of the dielectric block 1 occurred. Further, the electrical characteristics, that is, the attenuation characteristics, of this dielectric filter were almost the same as those of conventional dielectric filters.
［変形例］
本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能なものである。[Modifications] The present invention is not limited to the above-described embodiments, and, for example, the following modifications are possible.
（１） シールド部材１４の材料として、２０〜３００
℃の温度範囲において、熱膨張係数が４゜４〜５． ２
Ｘ １０−６／”Ｃのニッケル・コバルト・鉄合金（
２９Ｎ ｉ−１７Ｃｏ−Ｆ ｅ） 、及び熱膨張係数が
３．０〜４．２Ｘ１０−６／”Ｃの３ＯＮｉ１３Ｃｏ−
Ｆｅ合金を使用することができる。(1) As the material of the shield member 14, 20 to 300
In the temperature range of ℃, the coefficient of thermal expansion is 4.4~5. 2
X 10-6/”C nickel-cobalt-iron alloy (
29Ni-17Co-F e), and 3ONi13Co- with a thermal expansion coefficient of 3.0 to 4.2X10-6/''C
Fe alloys can be used.
また、誘電体ブロック１の熱膨張係数が実施例よりも大
きい場合には、４６Ｎ ｉ−Ｆ ｅ合金、５２−Ｎ ｉ
−Ｆ ｅ合金、４２Ｎｉ−６Ｃｒ−Ｆｅ合金等を使用す
ることができる。In addition, when the thermal expansion coefficient of the dielectric block 1 is larger than that in the example, 46N i-F e alloy, 52-N i
-Fe alloy, 42Ni-6Cr-Fe alloy, etc. can be used.
（２） 誘電体ブロック１の共振孔の数を増減すること
ができる。(2) The number of resonance holes in the dielectric block 1 can be increased or decreased.
（３） 端面導体９を省いて１／２波長型に構成するこ
とができる。(3) It is possible to omit the end face conductor 9 and configure it as a 1/2 wavelength type.
［発明の効果］
上述から明らかなように本発明によれば、ヒートショッ
クに対して信頼性の高い誘電体フィルタを提供すること
ができる。[Effects of the Invention] As is clear from the above, according to the present invention, a dielectric filter that is highly reliable against heat shock can be provided.
第１図は本発明の１実施例に係わる誘電体フィルタの一
部切欠斜視図、
第２図は第１図の導電膜を有する誘電体ブロックを示す
一部切欠斜視図、
第３図は第１図の組立体を示す一部切欠斜視図、第４図
は第１図の誘電体フィルタの■〜■線断面図、
第５図は第１図の誘電体フィルタの等価回路図である。
］・・・誘電体ブロック、２・・・開放端面、４ａ、４
ｂ・・・共振孔、６・・・内導体膜、７・・・外周面、
８・・・外導体膜、１４・・・シールド部材。
代 理 人 高 野 則 次第１図
第４図
第５図FIG. 1 is a partially cutaway perspective view of a dielectric filter according to an embodiment of the present invention, FIG. 2 is a partially cutaway perspective view showing a dielectric block having the conductive film shown in FIG. 1, and FIG. 1 is a partially cutaway perspective view showing the assembly of FIG. 1, FIG. 4 is a sectional view taken along lines 1 to 2 of the dielectric filter of FIG. 1, and FIG. 5 is an equivalent circuit diagram of the dielectric filter of FIG. 1. ]...Dielectric block, 2...Open end surface, 4a, 4
b... Resonance hole, 6... Inner conductor film, 7... Outer peripheral surface,
8... Outer conductor film, 14... Shield member. Agent Nori Takano Figure 1 Figure 4 Figure 5
Claims (1)
対してシールド部材が半田結合されている構成の誘電体
フィルタにおいて、 前記誘電体ブロックの熱膨張率をβ１、前記シールド部
材の熱膨張率をβ２とした場合に、β２／β１を０．５
〜１．５の範囲にすることが可能な熱膨張率を有する材
料によって前記シールド部材が形成されていることを特
徴とする誘電体フィルタ。[Claims] [1] In a dielectric filter having a configuration in which a shield member is soldered to an outer conductor film provided on an outer peripheral surface of a dielectric block, the coefficient of thermal expansion of the dielectric block is β1. , when the coefficient of thermal expansion of the shield member is β2, β2/β1 is 0.5
A dielectric filter characterized in that the shield member is formed of a material having a coefficient of thermal expansion that can be in the range of -1.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196756A JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196756A JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0482401A true JPH0482401A (en) | 1992-03-16 |
| JPH0767041B2 JPH0767041B2 (en) | 1995-07-19 |
Family
ID=16363095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2196756A Expired - Lifetime JPH0767041B2 (en) | 1990-07-25 | 1990-07-25 | Dielectric filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0767041B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837401A (en) * | 1994-07-22 | 1996-02-06 | Nec Corp | Structure of coupler for cavity resonators |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963802A (en) * | 1982-10-01 | 1984-04-11 | Murata Mfg Co Ltd | Dielectric resonator |
| JPS5967002U (en) * | 1982-10-25 | 1984-05-07 | 株式会社村田製作所 | Ground structure of dielectric coaxial resonator |
| JPS59139704A (en) * | 1982-10-18 | 1984-08-10 | Murata Mfg Co Ltd | Dielectric resonator |
-
1990
- 1990-07-25 JP JP2196756A patent/JPH0767041B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5963802A (en) * | 1982-10-01 | 1984-04-11 | Murata Mfg Co Ltd | Dielectric resonator |
| JPS59139704A (en) * | 1982-10-18 | 1984-08-10 | Murata Mfg Co Ltd | Dielectric resonator |
| JPS5967002U (en) * | 1982-10-25 | 1984-05-07 | 株式会社村田製作所 | Ground structure of dielectric coaxial resonator |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0837401A (en) * | 1994-07-22 | 1996-02-06 | Nec Corp | Structure of coupler for cavity resonators |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0767041B2 (en) | 1995-07-19 |
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