JPH0510316B2 - - Google Patents

Info

Publication number: JPH0510316B2
Authority: JP; Japan
Prior art keywords: growth; crystal; temperature; heater; growing
Prior art date: 1986-07-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP17962486A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6335492A (ja

Inventor

Masahiko Kitagawa

Yoshitaka Tomomura

Tomoji Yamagami

Shigeo Nakajima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-07-29

Filing date

1986-07-29

Publication date

1993-02-09

1986-07-29 Application filed by Sharp Corp filed Critical Sharp Corp

1986-07-29 Priority to JP17962486A priority Critical patent/JPS6335492A/ja

1987-07-28 Priority to US07/078,564 priority patent/US4869776A/en

1987-07-29 Priority to GB8717968A priority patent/GB2194554B/en

1988-02-16 Publication of JPS6335492A publication Critical patent/JPS6335492A/ja

1993-02-09 Publication of JPH0510316B2 publication Critical patent/JPH0510316B2/ja

Status Granted legal-status Critical Current

Links

239000013078 crystal Substances 0.000 claims description 74
238000000034 method Methods 0.000 claims description 20
239000002994 raw material Substances 0.000 claims description 9
150000001875 compounds Chemical class 0.000 claims description 6
239000004065 semiconductor Substances 0.000 claims description 6
229910052736 halogen Inorganic materials 0.000 claims description 3
150000002367 halogens Chemical class 0.000 claims description 3
238000005092 sublimation method Methods 0.000 claims description 2
230000001276 controlling effect Effects 0.000 claims 1
230000000977 initiatory effect Effects 0.000 claims 1
238000010438 heat treatment Methods 0.000 description 9
239000003708 ampul Substances 0.000 description 7
238000002425 crystallisation Methods 0.000 description 5
230000008025 crystallization Effects 0.000 description 5
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 5
239000010453 quartz Substances 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
238000010586 diagram Methods 0.000 description 3
229910052740 iodine Inorganic materials 0.000 description 3
239000011630 iodine Substances 0.000 description 3
230000002123 temporal effect Effects 0.000 description 3
238000002109 crystal growth method Methods 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000012808 vapor phase Substances 0.000 description 2
229910007709 ZnTe Inorganic materials 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
210000001787 dendrite Anatomy 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000011065 in-situ storage Methods 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000000859 sublimation Methods 0.000 description 1
230000008022 sublimation Effects 0.000 description 1
230000009466 transformation Effects 0.000 description 1
230000001052 transient effect Effects 0.000 description 1
239000006163 transport media Substances 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP17962486A 1986-07-29 1986-07-29 化合物半導体結晶の成長方法 Granted JPS6335492A (ja)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
JP17962486A JPS6335492A (ja)	1986-07-29	1986-07-29	化合物半導体結晶の成長方法
US07/078,564 US4869776A (en)	1986-07-29	1987-07-28	Method for the growth of a compound semiconductor crystal
GB8717968A GB2194554B (en)	1986-07-29	1987-07-29	A method for the growth of a compound semiconductor crystal

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP17962486A JPS6335492A (ja)	1986-07-29	1986-07-29	化合物半導体結晶の成長方法

Publications (2)

Publication Number	Publication Date
JPS6335492A JPS6335492A (ja)	1988-02-16
JPH0510316B2 true JPH0510316B2 (2)	1993-02-09

Family

ID=16069019

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP17962486A Granted JPS6335492A (ja)	1986-07-29	1986-07-29	化合物半導体結晶の成長方法

Country Status (1)

Country	Link
JP (1)	JPS6335492A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4670002B2 (ja) *	2004-07-20	2011-04-13	学校法人早稲田大学	窒化物単結晶の製造方法
JP5272390B2 (ja)	2007-11-29	2013-08-28	豊田合成株式会社	Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

1986
- 1986-07-29 JP JP17962486A patent/JPS6335492A/ja active Granted

Also Published As

Publication number	Publication date
JPS6335492A (ja)	1988-02-16

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