JPS6335492A - 化合物半導体結晶の成長方法 - Google Patents

化合物半導体結晶の成長方法

Info

Publication number
JPS6335492A
JPS6335492A JP17962486A JP17962486A JPS6335492A JP S6335492 A JPS6335492 A JP S6335492A JP 17962486 A JP17962486 A JP 17962486A JP 17962486 A JP17962486 A JP 17962486A JP S6335492 A JPS6335492 A JP S6335492A
Authority
JP
Japan
Prior art keywords
growth
crystal
single crystal
temperature
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17962486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510316B2 (2
Inventor
Masahiko Kitagawa
雅彦 北川
Yoshitaka Tomomura
好隆 友村
Tomoji Yamagami
山上　智司
Shigeo Nakajima
中島　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17962486A priority Critical patent/JPS6335492A/ja
Priority to US07/078,564 priority patent/US4869776A/en
Priority to GB8717968A priority patent/GB2194554B/en
Publication of JPS6335492A publication Critical patent/JPS6335492A/ja
Publication of JPH0510316B2 publication Critical patent/JPH0510316B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17962486A 1986-07-29 1986-07-29 化合物半導体結晶の成長方法 Granted JPS6335492A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP17962486A JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法
US07/078,564 US4869776A (en) 1986-07-29 1987-07-28 Method for the growth of a compound semiconductor crystal
GB8717968A GB2194554B (en) 1986-07-29 1987-07-29 A method for the growth of a compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17962486A JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS6335492A true JPS6335492A (ja) 1988-02-16
JPH0510316B2 JPH0510316B2 (2) 1993-02-09

Family

ID=16069019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17962486A Granted JPS6335492A (ja) 1986-07-29 1986-07-29 化合物半導体結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS6335492A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006027976A (ja) * 2004-07-20 2006-02-02 Univ Waseda 窒化物単結晶の製造方法及びその製造装置
JP2009135197A (ja) * 2007-11-29 2009-06-18 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006027976A (ja) * 2004-07-20 2006-02-02 Univ Waseda 窒化物単結晶の製造方法及びその製造装置
JP2009135197A (ja) * 2007-11-29 2009-06-18 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8765507B2 (en) 2007-11-29 2014-07-01 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

Also Published As

Publication number Publication date
JPH0510316B2 (2) 1993-02-09

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